Search

Your search keyword '"Stakhira, P."' showing total 170 results
Start Over Author "Stakhira, P."
170 results on '"Stakhira, P."'

2. Spin- and Voltage-dependent emission from Intra- and Intermolecular TADF OLEDs

Author

Bunzmann, Nikolai, Krugmann, Benjamin, Weissenseel, Sebastian, Kudriashova, Liudmila, Ivaniuk, Khrystyna, Stakhira, Pavlo, Cherpak, Vladyslav, Chapran, Marian, Grybauskaite-Kaminskiene, Gintare, Grazulevicius, Juozas Vidas, Dyakonov, Vladimir, and Sperlich, Andreas

Subjects
Physics - Applied Physics, Condensed Matter - Materials Science
Abstract

Organic light emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) utilize molecular systems with a small energy splitting between singlet and triplet states. This can either be realized in intramolecular charge transfer states of molecules with near-orthogonal donor and acceptor moieties or in intermolecular exciplex states formed between a suitable combination of individual donor and acceptor materials. Here, we investigate 4,4'-(9H,9'H-[3,3'-bicarbazole]-9,9'-diyl)bis(3-(trifluoromethyl) benzonitrile) (pCNBCzoCF3), which shows intramolecular TADF but can also form exciplex states in combination with 4,4',4''-tris[phenyl(m-tolyl)amino]triphenylamine (m-MTDATA). Orange emitting exciplex-based OLEDs additionally generate a sky-blue emission from the intramolecular emitter with an intensity that can be voltage-controlled. We apply electroluminescence detected magnetic resonance (ELDMR) to study the thermally activated spin-dependent triplet to singlet up-conversion in operating devices. Thereby, we can investigate intermediate excited states involved in OLED operation and derive the corresponding activation energy for both, intra- and intermolecular based TADF. Furthermore, we give a lower estimate for the extent of the triplet wavefunction to be >1.2 nm. Photoluminescence detected magnetic resonance (PLDMR) reveals the population of molecular triplets in optically excited thin films. Overall, our findings allow us to draw a comprehensive picture of the spin-dependent emission from intra- and intermolecular TADF OLEDs., Comment: 9 pages, 5 figures

Published
2020
Full Text
View/download PDF

3. Frequency dependence of conductivity in the layered In$_4$Se$_3$ crystals

Author

Stakhira, J. M., Demkiv, T. M., and Fl'unt, O. Ye.

Subjects
Condensed Matter - Materials Science
Abstract

The frequency dependence of conductivity in In$_4$Se$_3$, pure and with copper admixture crystals, in the region of nitrogen temperatures is investigated. It was found out that variable length hops on the localized levels in the vicinity of Fermi level is pre-dominant mechanism of charge transfer in the crystals. For pure In$ _4$Se$ _3$ crystals the density of localized states is $10^{17}-10^{18}$ eV$^{-1}\cdot$cm$^{-3}$, the mean hop length is 220--350 {\AA}. The reasons for the occurrence of localized states are considered within the model of a layered crystal as a quasi-disordered system., Comment: 3 pages, 2 figures

Published
2020

8. Effect of uniaxial stress on low-frequency dispersion of dielectric constant in high-resistivity GaSe crystals

Author

Stakhira, J. M., Fl'unt, O. Ye., and Fiyala, Ya. M.

Subjects
Condensed Matter - Materials Science, 82D37, 74A10
Abstract

Low-frequency dielectric spectra of high-resistivity GaSe layered crystals have been studied on the samples clamped between two insulating parallel plates at frequencies up to 100 kHz. The measurements have been carried out at different uniaxial stresses up to $2.4\times10^5$ Pa applied along the c-axis normal to crystal layer's plane. It is revealed that the dielectric spectra of high-resistivity GaSe layered crystals with insulating plates obey a universal power law ${\sim}\omega^{n-1}$, where ${\omega}$ is the angular frequency and $n\approx 0.8$, earlier observed on high-resistivity GaSe crystals with indium-soldered contacts. The same type of spectra on the crystals with different types of contacts (insulating and ohmic) confirms the bulk character of the observed polarization caused by hopping charge carriers. It is shown that the frequency-dependent dielectric constant increases linearly with the uniaxial stress characterized by the coefficient ${\Delta}{\epsilon}/({\epsilon}{\Delta}{p})=8{\times}10^{-7}$ Pa$^{-1}$. A slight increase of power $1-n$ with the stress is observed, that leads to a stronger dielectric dispersion. The strong stress dependence of the low-frequency dielectric constant in high-resistivity GaSe crystals may be referred to the presence of the formations of elementary dipoles, rotations of which correspond to hops of localized charge carriers., Comment: 5 pages, 2 figures

Published
2011

9. Effects of Electron-Withdrawing Strengths of the Substituents on the Properties of 4‑(Carbazolyl‑R‑benzoyl)-5-CF3‑1H‑1,2,3-triazole Derivatives as Blue Emitters for Doping-Free Electroluminescence Devices.

Author

Stanitska, Mariia, Pokhodylo, Nazariy, Lytvyn, Roman, Urbonas, Ervinas, Volyniuk, Dmytro, Kutsiy, Stepan, Ivaniuk, Khrystyna, Kinzhybalo, Vasyl, Stakhira, Pavlo, Keruckiene, Rasa, Obushak, Mykola, and Gražulevičius, Juozas Vidas

Published
2024
Full Text
View/download PDF

28. Multi-channel electroluminescence of CdTe/CdS core-shell quantum dots implemented into a QLED device

Author

Pidluzhna, A., Ivaniuk, K., Stakhira, P., Hotra, Z., Chapran, M., Ulanski, J., Tynkevych, O., Khalavka, Y., Baryshnikov, G. V., Minaev, B. F., Ågren, Hans, Pidluzhna, A., Ivaniuk, K., Stakhira, P., Hotra, Z., Chapran, M., Ulanski, J., Tynkevych, O., Khalavka, Y., Baryshnikov, G. V., Minaev, B. F., and Ågren, Hans

Abstract

CdTe/CdS core-shell quantum dots were synthesized and implemented into a light emitting device resulting in multi-channel electroluminescence with a light-green emission color. The main electroluminescence band at about 530 nm corresponds to the emission by the CdTe core (type I core/shell structure), while the next emission band at 595 nm is assigned to the crossed recombination of electrons from the conduction band of the CdS shell and holes from the valence band of the CdTe core (type II core/shell structure). At the same time, the photoluminescence spectrum of the synthesized CdTe/CdS core-shell quantum dots contains only one emission band distinctive for type II structures. This behavior of CdTe/CdS core-shell quantum dots upon the electroexcitation allows the extension of the electroluminescence spectrum in the optical region in a way that is useful for lighting source applications. Such multi-channel electroluminescence can most probably also be reproduced in related core-shell systems accounting for size-confinement between the core size and shell thickness.

Published
2019
Full Text
View/download PDF

30. ДОСЛІДЖЕННЯ СЕНСОРНИХ ВЛАСТИВОСТЕЙ ПЛІВОК ПОЛІАНІЛІНУ, ОТРИМАНИХ МЕТОДОМ ВАКУУМНОГО НАПИЛЕННЯ

Author

Aksimentyeva, O. I., Cherpak, V. V., Hlushyk, I. P., Stakhira, P. Y., Beliuh, V. M., and Poliovyi, D. O.

Subjects
polyaniline, fibril-optic sensors, pH, vacuum deposition, полианилин, волоконно-оптические сенсоры, рН, вакуумное напыление, поліанілін, волоконно-оптичні сенсори, вакуумне напилення
Abstract

In order to apply the vacuum deposited polyaniline (PAN) films as sensitive to pH level elements of fibril — optic sensors (FOS) a technology of polymer deposition has been developed. It gives a possibility to obtaining the conducting emeraldine form of PAN by means of the known methods of proton doping. Effect of vacuum deposition temperature on the refractive index and spectral characteristics of the films has been established. Based on the PAN films optical response on the hydrogen index of medium the FOS of the pH level has been worked out., С целью использования пленок полианилина (ПАН), полученных методом вакуумного напыления, в качестве чувствительных к уровню рН элементов волоконно-оптических сенсоров (ВОС) разработана технология осаждения полимера, позволяющая путем использования стандартных методов протонирования получать проводящую эмеральдиновую форму ПАН. Установлено влияние температуры осаждения на показатель преломления и спектральные характеристики пленок. На основе изменения оптического отклика пленок ПАН в зависимости от значения водородного показателя среды разработан ВОС уровня рН., З метою застосування вакуумно напилених плівок поліаніліну (ПАН) як чутливих до рівня рН елементів волоконно-оптичних сенсорів (ВОС) розроблена технологія осадження полімеру, яка дала змогу шляхом використання стандартних методів протонування отримати провідну емеральдинову форму ПАН. Встановлено вплив температури осадження на показник заломлення і спектральні характеристики плівок. На основі результатів досліджень зміни оптичного відгуку плівок ПАН від рівня водневого покажчика середовища розроблено ВОС рівня рН.

Published
2017

31. TECHNOLOGICAL ASPECTS OF ULTRAVIOLET RADIATION SENSORS FORMATION ON THE BASE OF HETEROSTRUCTURE GaSe-GaN

Author

Stakhira, P. Y., Shandra, Z. A., and Cherpak, V. V.

Subjects
Condensed Matter::Materials Science, Physics::Optics, гетероструктура, GaSe, GaN, рентгенофазовий аналіз, катодолюмінісценція, heterostructure, X-rey diffraction measurements, cathodoluminescence, рентгенофазовый анализ, катодолюминисценция
Abstract

The technique of GaAs ionic sputtering in the ammonia environment using crossed electrical and magnetic fields for gallium nitride structures formation on the GaSe substrates, with an aim to create sensors of ultraviolet radiation, is proposed. The optimization of reactor linear dimensions resulting in homogenous gallium nitride films production have been performed. The results of X-ray phase analysis of GaSe GaN heterostructures revealed polycrystalline hexagonal gallium nitride film on the samples surface. In particular the (110) plane peak is present at the patterns which corresponds to hexagonal GaN. The cathodoluminescent properties of GaSe GaN heterostructures have been studied., Предложен метод ионного распыления GaAs в атмосфере аммиака, осуществляющийся в скрещенных электрическом и магнитном полях для формирования нитридо- галлиевых структур на подложке GaSe, с целью формирования сенсоров ультрафіолетового излучения. Проведена оптимизация линейных размеров реактора с целью получения однородных пленок нитрида галлия. Результаты рентгенофазового анализа гетероструктуры GaSe GaN указывают на присутствие поликристаллической пленки гексагонального нитрида галлия на поверхности образцов. В частности, на дифрактограммах присутствует линия (110), соответствующая гексагональному GaN. Изучены катодолюминесцентные свойства гетероструктуры GaSe GaN., Запропонований метод іонного розпилення GaAs а аміачній атмосфері, що відбувається в схрещених електричному і магнітному полях для формування нітридо-галієвих структур на підкладці GaSe, з метою створення сенсорів ультрафіолетового випромінювання. Проведено оптимізацію лінійних розмірів реактора з метою отримання однорідних плівок нітриду галію. Результати рентгенофазового аналізу гетероструктури GaSe-GaN вказують на присутність полікристалічної плівки гексагонального нітриду галію на поверхні зразків. Зокрема, на дифрактограмах присутня лінія (110), що відповідає гексагональному GaN. Вивчено катодолюмінесцентні властивості гетероструктури GaSe-GaN.

Published
2017

32. The properties of tris (8-hydroxyquinoline) aluminum organic light emitting diode with undoped zinc oxide anode layer.

Author

Luka, G., Stakhira, P., Cherpak, V., Volynyuk, D., Hotra, Z., Godlewski, M., Guziewicz, E., Witkowski, B., Paszkowicz, W., and Kostruba, A.

Subjects
*ZINC oxide thin films, *HYDROXYQUINOLINE, *ALUMINUM, *ZINC oxide, *LIGHT emitting diodes, *QUANTUM efficiency
Abstract

Transparent and conductive undoped zinc oxide films were prepared by atomic layer deposition method for use in tris (8-hydroxyquinoline) aluminum (Alq3)-based organic light emitting diodes. The properties of the ZnO layers were investigated. The ZnO/CuI/Alq3/poly(ethylene glycol) dimethyl ether/Al device turned on at 7.9 V and demonstrated external quantum efficiency of 1.5% which is better comparing to the same structure but with indium tin oxide as anode layer. [ABSTRACT FROM AUTHOR]

Published
2010
Full Text
View/download PDF

33. BaZrO 3 perovskite nanoparticles as emissive material for organic/inorganic hybrid light-emitting diodes

Author

Ivaniuk, K., primary, Cherpak, V., additional, Stakhira, P., additional, Baryshnikov, G., additional, Minaev, B., additional, Hotra, Z., additional, Turyk, P., additional, Zhydachevskii, Ya., additional, Volyniuk, D., additional, Aksimentyeva, O., additional, Penyukh, B., additional, Lazauskas, A., additional, Tamulevičius, S., additional, Grazulevicius, J.V., additional, and Ågren, H., additional

Published
2017
Full Text
View/download PDF

35. INVESTIGATION OF THE SENSOR PROPERTIES OF THE POLYANILINE FILMS OBTAINED BY THE METHOD OF VACUUM DEPOSITION

Author

Aksimentyeva, O. I., Cherpak, V. V., Hlushyk, I. P., Stakhira, P. Y., Beliuh, V. M., Poliovyi, D. O., Aksimentyeva, O. I., Cherpak, V. V., Hlushyk, I. P., Stakhira, P. Y., Beliuh, V. M., and Poliovyi, D. O.

Abstract

In order to apply the vacuum deposited polyaniline (PAN) films as sensitive to pH level elements of fibril — optic sensors (FOS) a technology of polymer deposition has been developed. It gives a possibility to obtaining the conducting emeraldine form of PAN by means of the known methods of proton doping. Effect of vacuum deposition temperature on the refractive index and spectral characteristics of the films has been established. Based on the PAN films optical response on the hydrogen index of medium the FOS of the pH level has been worked out.

Published
2017

36. This title is unavailable for guests, please login to see more information.

Author

Ivaniuk, K. B., Baryshnikov, Gleb V., Stakhira, P. Y., Pedersen, Stephan Korsgaard, Pittelkow, Michael, Lazauskas, A., Volyniuk, D., Grazulevicius, J. V., Minaev, Boris F., Ågren, H., Ivaniuk, K. B., Baryshnikov, Gleb V., Stakhira, P. Y., Pedersen, Stephan Korsgaard, Pittelkow, Michael, Lazauskas, A., Volyniuk, D., Grazulevicius, J. V., Minaev, Boris F., and Ågren, H.

Abstract

New stable WOLEDs based on p-extended azatrioxa[8]circulenes have been fabricated. Combining the own blue emission of the azatrioxa[8]circulenes with the yellow-green emission of the "m-MTDATA:azatrioxa[8]circulene" exciplex a broad visible region, from 400 to 700 nm, is covered. The so constructed WOLEDs exhibit a luminance exceeding 23 700 cd m-2 and an external quantum efficiency reaching 3%.

Published
2017

37. New WOLEDs based on pi-extended azatrioxa[8]circulenes

Author

Ivaniuk, K. B., Baryshnikov, Glib V., Stakhira, P. Y., Pedersen, S. K., Pittelkow, M., Lazauskas, A., Volyniuk, D., Grazulevicius, J. V., Minaev, Boris F., Ågren, Hans, Ivaniuk, K. B., Baryshnikov, Glib V., Stakhira, P. Y., Pedersen, S. K., Pittelkow, M., Lazauskas, A., Volyniuk, D., Grazulevicius, J. V., Minaev, Boris F., and Ågren, Hans

Abstract

New stable WOLEDs based on pi-extended azatrioxa[8]circulenes have been fabricated. Combining the own blue emission of the azatrioxa[8] circulenes with the yellow-green emission of the "m-MTDATA:azatrioxa[8]circulene'' exciplex a broad visible region, from 400 to 700 nm, is covered. The so constructed WOLEDs exhibit a luminance exceeding 23 700 cd m(-2) and an external quantum efficiency reaching 3%., QC 20170613

Published
2017
Full Text
View/download PDF

38. Synthesis and characterisation of a carbazole-based bipolar exciplex-forming compound for efficient and color-tunable OLEDs

Author

Deksnys, T., Simokaitiene, J., Keruckas, J., Volyniuk, D., Bezvikonnyi, O., Cherpak, V., Stakhira, P., Ivaniuk, K., Helzhynskyy, I., Baryshnikov, Glib, Minaev, B., Grazulevicius, J. V., Deksnys, T., Simokaitiene, J., Keruckas, J., Volyniuk, D., Bezvikonnyi, O., Cherpak, V., Stakhira, P., Ivaniuk, K., Helzhynskyy, I., Baryshnikov, Glib, Minaev, B., and Grazulevicius, J. V.

Abstract

A new ambipolar fluorophore, 3,6-di(4,4′-dimethoxydiphenylaminyl)-9-(1-naphthyl)carbazole, was synthesized and its physical properties were studied by differential scanning calorimetry, thermogravimetric analysis, UV-vis absorption, luminescence and photoelectron emission spectroscopy, cyclic voltammetry and a time of flight method. The latter technique indicates that the compound demonstrates bipolar semiconducting properties. Using the synthesized compound as an emissive material, a single-layer OLED with an electroluminescence spectrum containing a voltage-dependent electroplex emission band in the region of 550-650 nm was fabricated. Another OLED was fabricated with an additional electron transporting bathophenanthroline layer that forms a direct interface with the layer of 3,6-di(4,4′-dimethoxydiphenylaminyl)-9-(1-naphthyl)carbazole. A strong exciplex-type band in the electroluminescence spectrum of this OLED with an emission maximum at ca. 540 nm was observed. The electroluminescence spectra of both devices were found to be clearly dependent on the applied bias. This effect can be useful for the development of efficient and colour-tunable OLEDs., Funding text: Financial support from the People Programme (Marie Curie Actions) of the European Union's Seventh Framework Programme FP7/2007-2013 under REA grant agreement no. 612670 is gratefully acknowledged. All the computations were performed using resources provided by the Swedish National Infrastructure for Computing (SNIC) at the Parallel Computer Center (PDC) through the project “Multiphysics Modeling of Molecular Materials”, SNIC 020/11-23. This research was also supported by the Ministry of Education and Science of Ukraine (project number 0115U000637). B. F. Minaev acknowledges the fellowship of the Chinese Academy of Sciences under the CAS President's International Initiative for Visiting Scientists.QC 20170221

Published
2017
Full Text
View/download PDF

39. New WOLEDs based on π-extended azatrioxa[8]circulenes

Author

Ivaniuk, K. B., primary, Baryshnikov, G. V., additional, Stakhira, P. Y., additional, Pedersen, S. K., additional, Pittelkow, M., additional, Lazauskas, A., additional, Volyniuk, D., additional, Grazulevicius, J. V., additional, Minaev, B. F., additional, and Ågren, H., additional

Published
2017
Full Text
View/download PDF

41. Abstracts of articles deposited at VINITI

Author

Dergunova, N. V., Sakhnenko, V. P., Fesenko, E. G., Abakumov, A. I., Vinogradov, V. S., Dinesrshtein, V. B., Kudzin, A. Yu., Flerova, S. A., Bochkov, O. E., Pastushenkov, A. G., Gorchakov, L. V., Tikhonravova, E. R., Lukin, I. P., Solov'ev, Yu. A., Yagushkin, N. I., Solov'ev, Yu. A., Yagushkin, N. I., Anan'in, P. S., Glavanakov, I. V., Gushtan, M. N., Kashirin, A. P., Stibunov, V. I., Medved', A. I., Mikhal'chuk, A. Ya., Bachinskii, Yu. G., Liopo, V. A., Liopo, V. A., Panov, V. F., Perevoznikov, E. N., Maslov, P. G., Skvortsov, G. E., Perevoznikov, E. N., Maslov, P. G., Grigor'eva, I. D., Timoshinin, V. S., Lukin, I. P., Lysak, V. A., Martynov, A. A., Pogosov, O. K., Miliyanchuk, A. V., Stakhira, I. M., Mikhailov, L. V., Garkusha, L. N., Krasnikov, V. I., Sperkach, V. S., Cholpan, P. F., Fedorov, M. I., Shorin, V. A., Fedorov, L. M., Popov, L. E., Russiyan, A. A., Tereshko, I. V., Aleksandrov, N. A., Krivenko, P. I., Yaichnitsyn, V. G., Blokhin, S. M., Shipatov, É. T., Obozov, V. I., Buntar', A. G., Tkhorivskii, A. M., Obozov, V. I., Freik, D. M., Kostik, B. F., Shperum, V. M., Maier, G. V., Borisov, V. S., Popov, L. E., Russiyan, A. A., Tereshko, I. V., Aleksandrov, N. A., Byzov, N. N., Kul'kova, S. E., Egorushkin, V. E., Anokhina, I. N., Fadin, V. P., Gerasyuta, S. M., Markov, N. G., Kulikov, A. N., Ponomarev, G. A., Vladimirov, S. A., Bondarev, V. D., Ushakov, A. V., Golosov, N. S., Arbuzov, M. P., Yatsura, M. M., Kirichok, P. P., Yatsura, O. R., Vorob'ev, A. A., Zavadovskaya, E. K., Annenkov, Yu. M., Frangul'yan, T. S., Biller, V. K., Galanov, Yu. I., and Chormonov, A. B.

Published
1979
Full Text
View/download PDF

42. A single emitting layer white OLED based on exciplex interface emission

Author

Angioni, E., primary, Chapran, M., additional, Ivaniuk, K., additional, Kostiv, N., additional, Cherpak, V., additional, Stakhira, P., additional, Lazauskas, A., additional, Tamulevičius, S., additional, Volyniuk, D., additional, Findlay, N. J., additional, Tuttle, T., additional, Grazulevicius, J. V., additional, and Skabara, P. J., additional

Published
2016
Full Text
View/download PDF

44. ОРГАНИЧЕСКАЯ ФОТОЧУВСТВИТЕЛЬНАЯ КОМПОЗИТНАЯ СТРУКТУРА НА ОСНОВЕ ПЕНТАЦЕНА И ПОЛИАНИЛИНА

Author

Cherpak, V. V., Stakhira, P. Y., and Hotra, Z. Yu.

Subjects
photosensing composite structure, pentacene, polyaniline, фоточутлива композитна структура, пентацен, поліанілін, фоточувствительная композитная структура, полианилин
Abstract

Organic photosensing composite polyaniline:pentacene structure with a wide spectrum of photosensitivity (1.7-2.7 eV) by means of vacuum co-deposition of polyaniline and pentacene on flexible substrate (PET) with ITO layer was fabricated. As rectifying contact the deposited aluminum film on composite structure was used. The bulk and barrier properties of composite structure were evaluated by means of current-voltage measurements., Сформована органічна фоточутлива композитна структура ПАН:пентацен з широким спектром фоточутливості (1,7-2,7 еВ) методом одночасного вакуумного напилення пентацену та поліаніліну на гнучку підкладку (PET) з шаром ITO. Випрямляючий контакт забезпечувався напиленням алюмінієвої плівки на поверхню композиту. Досліджено об’ємні та бар’єрні властивості композитної структури за допомогою вольт-амперних та імпедансних вимірювань., Сформирована органическая фоточувствительная композитная структура полианилин:пентацен с широким спектром фоточувствительности (1,7-2,7 еВ) методом одновременного вакуумного напыления пентацена и полианилина на гибкую подложку (PET) со слоем ITO. Випрямляющий контакт обеспечивался напилением алюминиевой пленки на поверхность композита. Исследовано объемные и барьерные свойства структуры с помощью вольт-амперных и импедансных измерений.

Published
2008

45. The optical spectra of polyaniline in the environments with different ph index

Author

Glushyk, I. P., Stakhira, P. Y., Aksimentyeva, O. I., Mikityuk, Z. M., Fechan, A. V., Cherpak, V. V., and Національний університет 'Львівська політехніка'

Subjects
541.183, 535.394, 539.233
Abstract

Вивчено можливість використання поліаніліну як чутливого елемента для сенсора pH з оптичним каналом передачі інформації. Згідно з оптичною спектроскопією показано, що максимальна чутливість поліаніліну до дії рН проявляється в області 750 нм. The possibility of polyaniline using as sensitive element of pH sensors with an optical information transition channel are studied. In paper are shown that the polyaniline is most sensitive to pH action on 750 nm, due to optical spectroscopy data.

Published
2005

46. Photovoltaic properties of a heterostructure on the basis of porous silicon and polyaniline

Author

Stakhira, P., Aksimentieva, E., Mykytyuk, Z., and Cherpak, V.

Abstract

An electric junction between porous silicon (n-type conductivity) and conductive polyaniline (p-type conductivity) has been made by electrochemical polymerization of aniline on the porous silicon surface. This heterostructure has been found to exhibit rectifying І-V characteristics. Under illumination, a considerable increase of the current is observed with a reverse bias. The structure photosensitivity is defined mainly by two barriers, namely, by the polymer/porous silicon interphase and the porous silicon/crystalline silicon barrier. Электрический контакт между пористым кремнием с n-типа проводимостью и проводящим полианилином с проводимостью p-типа изготовлен путем электрохимической полимеризации анилина на поверхности пористого кремния. Найдено, что такая гетероструктура демонстрирует выпрямляющие І-V характеристики. При освещении наблюдалось значительное повышение тока при обратном смещении. Фоточувствительность структуры преимущественно определяется двумя барьерами: интерфазой полимер-пористый кремний и пористый кремний-монокристаллический кремний. Електричний контакт мiж поруватим кремнiєм з n-типу провiднiстю i електропровiдним полiмером - полiанiлiном з провiднiстю p-типу створено шляхом електрохiмiчної полiмеризацiї анiлiну на поверхнi поруватого кремнiю. 3найдено, що така гетероструктура демонструє випрямляючi І-V характеристики. При освiтленнi спостерiгалося значне пiдвищення струму при зворотному змiщеннi. Фоточутливiсть структури переважно визначається двома бар'єрами: iнтерфазою полiмер-поруватий кремнiй та поруватий кремнiй-монокристалiчний кремнiй.

Published
2005

Catalog

Books, media, physical & digital resources
See catalog results