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2. GaN laser technology for cold-atom quantum sensors and optical atomic clocks

3. Structural and emission improvement of cyan-emitting InGaN quantum wells by introducing a large substrate misorientation angle

5. GaN laser diodes for atom-cooling for quantum technologies

6. Influence of substrate misorientation on the emission and waveguiding properties of a blue (In,Al,Ga)N laser-like structure studied by synchrotron radiation microbeam X-ray diffraction

7. GaN laser diodes for cold-atom sensing, optical atomic clocks and precision metrology

8. GaN laser technology for cold-atom quantum sensors and optical atomic clocks

9. Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes

12. Stack of two III-nitride laser diodes interconnected by a tunnel junction

19. Cavity suppression in nitride based superluminescent diodes.

25. GaN laser diodes for quantum technologies

30. GaN laser diodes for quantum sensing

31. Advances in GaN laser diodes for quantum sensors and optical atomic clocks

40. GaN lasers for quantum technologies

47. Advances in single mode, high frequency and high power AlGaInN laser diodes

48. Advances in AlGaInN laser diode technology for defence applications

49. InGaN tapered laser diodes

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