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Magnetic diffusion is of great importance in the domain of electromechanical energy conversion since it can be a performance-limiting mechanism. This paper deals with magnetic diffusion in the case of the rails of a railgun. The experiments benefit from the use of a new type of high magnetic-field sensor based on thin (< 1 [micro]m) manganite films, which exhibits a colossal magnetoresistance (CMR) effect and has very small sensitive areas (e.g., 0.5 mm x 50 [micro]m). Some basics about CMR and the design of the sensor are given. Several sensors were used and calibrated in the course of static transient railgun experiments. Here, varying spatial field distributions due to the use of different rail materials were recorded. Magnetic-field measurements during railgun operation with projectile velocities exceeding 1000 m/s have been successfully performed. By comparison with 3-D finite-element calculations, interesting results concerning magnetic diffusion have been worked out. Index Terms--Magnetoresistance, railguns, sensors, skin effect.

The accurate measurement of the magnetic field distribution during electromagnetic launch experiments is an ambitious task. Loop sensors are widely used for detecting the change in magnetic flux. However, this technique is mostly used only for qualitative purposes, e.g., for triggering various devices. This paper deals with the use of another type of high magnetic field sensor based on thin (< 1 [micro]m) manganite films, which exhibit the colossal magnetoresistance (CMR) effect. This sensor measures the magnitude of the magnetic induction and can have very small sensitive areas (e.g., 0.5 mm x 50 [micro]m). Some basics about CMR and the design of the sensor are given. Several sensors were used in experiments performed with the ISL-launcher EMA3 (Eprim = 0.6 MJ, l = 3 m, cal = 15 mm x 30 mm). Transient magnetic field profiles with rise times of approximately 50 [micro]s and amplitudes up to 4 T were recorded. The results obtained with the CMR sensors are compared with those of conventional loop sensors. Also, some metrological peculiarities due to high-frequency coupling to the detector circuit are mentioned. The highly local measurements of these CMR sensors were validated by results obtained from 3-D finite element (FE) calculations of the magnetic field distributions. Index Terms--Magnetoresistance, railguns, sensors, skin effect.

The electric and magnetic properties of microbridges made from 440 nm thick Y–Ba–Cu–O films prepared on Al2O3 substrates with CeO2 sublayers by the pulsed injection metal organic chemical vapor deposition (MOCVD) method were studied in temperatures ranging from 20 K to 300 K in order to investigate the possibilities of using these microbridges as fast fault current limiters. The application of an external magnetic field () causes the flux flow induced magneto-resistive effect, which is proportional to and to at low and high temperatures, respectively. The experimentally obtained S-shaped I–V characteristic and the change of the microbridge resistance over time when affected by a step-like magnetic field can be well explained using a thermo-electrical model based on Joule heating and the flux flow nature of the resistive state (RS). The transition from the superconducting to the RS, studied using ns duration rectangular waveform electrical pulses able to create up to ≈2106 A cm−2 current densities without rises of microbridge temperatures, demonstrated that the I–V characteristics of the RSs consisting of an assembly of straight lines corresponding to the different pinning centers. At temperatures close to the critical temperature of superconductivity, the number of these lines increases, and the I–V characteristics can be described with high accuracy by a power law. It was concluded that microbridges made from these films can be used as protectors against complicated waveform electromagnetic pulses having short rise times, high voltage peak amplitudes and long low-value over-current 'tails'. [ABSTRACT FROM AUTHOR]

We report on the use of the colossal magnetoresistance (CMR) effect in manganites for the measurement of pulsed magnetic fields up to the megagauss limit. To increase the application range in a magnetic field, we fabricated nanostructured La-Sr-Mn-O films consisting of nanocrystallites cummulated into clusters separated by highly amorphous inter-cluster boundaries. We demonstrate that the CMR effect does not saturate in these films at 77 K up to 91.4 T. Moreover, the magnetoresistance behavior at 290 K shows that nanostructured manganite films are promising candidates for the development of magnetic field scalar sensors operating in wide field and temperature ranges. [ABSTRACT FROM AUTHOR]

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In this work we present a mobile 43 kJ pulsed magnetic field facility for single pulse calibration of magnetic field sensors. The magnetic field generator is capable of generating magnetic fields up to 40 T with pulse durations in the range of 0.3-2 ms. The high power crowbar circuit is used for the reverse voltage protection and pulse shaping purposes. The structure, the development challenges and the implemented solutions to improve the facility for the calibration of the magnetic field sensors are overviewed. The experimental data of the application of the proposed generator for the calibration of manganite magnetic field sensors are presented.

A new fast high-power fault current limiter made from epitaxial and polycrystalline \La0.83\Sr0.17\MnO3 thin films and operating at 80 K has been demonstrated. An epitaxial film that exhibits a current-induced increase in its resistance is connected in series with a 50-\Omega-impedance transmission line, while a polycrystalline film whose resistance decreases with an increase in current is connected in parallel. It has been demonstrated that, when the fault current pulse has an amplitude of 200 V, a rise time of 0.5 ns, and a pulselength of 18 ns, the limitation of its amplitude is 3.5 dB after the rise time and 8 dB at the end of the pulse. [ABSTRACT FROM AUTHOR]

The following peculiarities of electron transport in In0:53Ga0:47As/In0:52Al0:48As quantum wells with δ-Si-doped In0:52Al0:48As barriers at high electric fields are discovered: (1) an enhancement of electron mobility by inserting the InAs phonon wall into the In0:53Ga0:47As/In0:52Al0:48As quantum well, as well as increasing the InAs content in the modulation-doped In0:8Ga0:2As/In0:7Al0:3As heterostructure; (2) a large decrease in electron mobility and a change of electron density with increasing electric field in the range of 1-4 kV/cm; (3) a magnetic field dependence of the threshold electric field for intervalley scattering of electrons; and (4) microwave current oscillations in high electric fields. [ABSTRACT FROM AUTHOR]