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Far-UVC light in the wavelength range of 200-230 nm has attracted renewed interest because of its safety for human exposure and effectiveness in inactivating pathogens. Here we present a compact solid-state far-UVC laser source based on second-harmonic generation (SHG) using a low-cost commercially-available blue laser diode pump. Leveraging the high intensity of light in a nanophotonic waveguide and heterogeneous integration, our approach achieves Cherenkov phase-matching across a bonded interface consisting of a silicon nitride (SiN) waveguide and a beta barium borate (BBO) nonlinear crystal. Through systematic investigations of waveguide dimensions and pump power, we analyze the dependencies of Cherenkov emission angle, conversion efficiency, and output power. Experimental results confirm the feasibility of generating far-UVC, paving the way for mass production in a compact form factor. This solid-state far-UVC laser source shows significant potential for applications in human-safe disinfection, non-line-of-sight free-space communication, and deep-UV Raman spectroscopy.

Nonlinear frequency conversion plays a crucial role in advancing the functionality of next-generation optical systems. Portable metrology references and quantum networks will demand highly efficient second-order nonlinear devices, and the intense nonlinear interactions of nanophotonic waveguides can be leveraged to meet these requirements. Here we demonstrate second harmonic generation (SHG) in GaAs-on-insulator waveguides with unprecedented efficiency of 40 W$^{-1}$ for a single-pass device. This result is achieved by minimizing the propagation loss and optimizing phase-matching. We investigate surface-state absorption and design the waveguide geometry for modal phase-matching with tolerance to fabrication variation. A 2.0 $\mu$m pump is converted to a 1.0 $\mu$m signal in a length of 2.9 mm with a wide signal bandwidth of 148 GHz. Tunable and efficient operation is demonstrated over a temperature range of 45 $^{\circ}$C with a slope of 0.24 nm/$^{\circ}$C. Wafer-bonding between GaAs and SiO$_2$ is optimized to minimize waveguide loss, and the devices are fabricated on 76 mm wafers with high uniformity. We expect this device to enable fully integrated self-referenced frequency combs and high-rate entangled photon pair generation., Comment: 7 pages, 7 figures

We demonstrate a polarization rotator integrated at the output of a GaAs waveguide producing type I second harmonic generation (SHG). Form-birefringent phase matching between the pump fundamental transverse electric (TE) mode near 2.0 $\mu$m wavelength and the signal fundamental transverse magnetic (TM) mode efficiently generates light at 1.0 $\mu$m wavelength. A SiN waveguide layer is integrated with the SHG device to form a multi-functional photonic integrated circuit. The polarization rotator couples light between the two layers and rotates the polarization from TM to TE or from TE to TM. With a TE-polarized 2.0 $\mu$m pump, type I SHG is demonstrated with the signal rotated to TE polarization. Passive transmission near 1.0 $\mu$m wavelength shows ~80 % polarization rotation across a broad bandwidth of ~100 nm. By rotating the signal polarization to match that of the pump, this SHG device demonstrates a critical component of an integrated self-referenced octave-spanning frequency comb. This device is expected to provide crucial functionality as part of a fully integrated optical frequency synthesizer with resolution of less than one part in 10$^{14}$., Comment: 7 pages, 7 figures

Nanophotonic waveguides with sub-wavelength mode confinement and engineered dispersion profiles are an excellent platform for application-tailored nonlinear optical interactions at low pulse energies. Here, we present fully air clad suspended-silicon waveguides for infrared frequency comb generation with optical bandwidth limited only by the silicon transparency. The achieved spectra are lithographically tailored to span 2.1 octaves in the mid-infrared (2.0-8.5 um or 1170--5000 cm-1) when pumped at 3.10 um with 100 pJ pulses. Novel fork-shaped couplers provide efficient input coupling with only 1.5 dB loss. The coherence, brightness, and the stability of the generated light are highlighted in a dual frequency comb setup in which individual comb-lines are resolved with 30 dB extinction ratio and 100 MHz spacing in the wavelength range of 4.8-8.5 um (2100-1170 cm-1). These sources are used for broadband gas- and liquid-phase dual-comb spectroscopy with 100 MHz comb-line resolution. We achieve a peak spectral signal-to-noise ratio of 10 Hz^0.5 across a simultaneous bandwidth containing 112,200 comb-lines. These results provide a pathway to further integration with the developing high repetition rate frequency comb lasers for compact sensors with applications in chip-based chemical analysis and spectroscopy.

The microscale integration of mid- and longwave-infrared photonics could enable the development of fieldable, robust chemical sensors, as well as highly efficient infrared frequency converters. However, such technology would be defined by the choice of material platform, which immediately determines the strength and types of optical nonlinearities available, the optical transparency window, modal confinement, and physical robustness. In this work, we demonstrate a new platform, suspended AlGaAs waveguides integrated on silicon, providing excellent performance in all of these metrics. We demonstrate low propagation losses within a span of nearly two octaves (1.26 to 4.6 $\mu$m) with exemplary performance of 0.45 dB/cm at $\lambda = 2.4$ $\mu$m. We exploit the high nonlinearity of this platform to demonstrate 1560 nm-pumped second-harmonic generation and octave-spanning supercontinuum reaching out to 2.3 $\mu$m with 3.4 pJ pump pulse energy. With mid-IR pumping, we generate supercontinuum spanning from 2.3 to 6.5 $\mu$m. Finally, we demonstrate the versatility of the platform with mid-infrared passive devices such as low-loss 10 $\mu$m-radius bends, compact power splitters with 96 $\pm$ 1% efficiency and edge couplers with 3.0 $\pm$ 0.1 dB loss. This platform has strong potential for multi-functional integrated photonic systems in the mid-IR.

Tremendous scientific progress has been achieved through the development of nonlinear integrated photonics. Prominent examples are Kerr-frequency-comb generation in micro-resonators, and supercontinuum generation and frequency conversion in nonlinear photonic waveguides. High conversion efficiency is enabling for applications of nonlinear optics, including such broad directions as high-speed optical signal processing, metrology, and quantum communication and computation. In this work, we demonstrate a gallium-arsenide-on-insulator (GaAs) platform for nonlinear photonics. GaAs has among the highest second- and third-order nonlinear optical coefficients, and use of a silica cladding results in waveguides with a large refractive index contrast and low propagation loss for expanded design of nonlinear processes. By harnessing these properties and developing nanofabrication with GaAs, we report a record normalized second-harmonic efficiency of 13,000% W-1cm-2 at a fundamental wavelength of 2 um. This work paves the way for high performance nonlinear photonic integrated circuits (PICs), which not only can transition advanced functionalities outside the lab through fundamentally reduced power consumption and footprint, but also enables future optical sources and detectors.

An external-cavity diode laser is reported with ultralow noise, high power coupled to a fiber, and fast tunability. These characteristics enable the generation of an optical frequency comb in a silica micro-resonator with a single-soliton state. Neither an optical modulator nor an amplifier was used in the experiment. This demonstration greatly simplifies the soliton generation setup and represents a significant step forward to a fully integrated soliton comb system., Comment: 7 pages, 5 figures