24 results on '"Stijn Poelman"'
Search Results
2. Hybrid modeling approach for mode-locked laser diodes with cavity dispersion and nonlinearity
- Author
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Stijn Cuyvers, Stijn Poelman, Kasper Van Gasse, and Bart Kuyken
- Subjects
Medicine ,Science - Abstract
Abstract Semiconductor-based mode-locked lasers, integrated sources enabling the generation of coherent ultra-short optical pulses, are important for a wide range of applications, including datacom, optical ranging and spectroscopy. As their performance remains largely unpredictable due to the lack of commercial design tools and the poorly understood mode-locking dynamics, significant research has focused on their modeling. In recent years, traveling-wave models have been favored because they can efficiently incorporate the rich semiconductor physics of the laser. However, thus far such models struggle to include nonlinear and dispersive effects of an extended passive laser cavity, which can play an important role for the temporal and spectral pulse evolution and stability. To overcome these challenges, we developed a hybrid modeling strategy by unifying the traveling-wave modeling technique for the semiconductor laser sections with a split-step Fourier method for the extended passive laser cavity. This paper presents the hybrid modeling concept and exemplifies for the first time the significance of the third order nonlinearity and dispersion of the extended cavity for a 2.6 GHz III–V-on-Silicon mode-locked laser. This modeling approach allows to include a wide range of physical phenomena with low computational complexity, enabling the exploration of novel operating regimes such as chip-scale soliton mode-locking.
- Published
- 2021
- Full Text
- View/download PDF
3. Micro-Transfer Printing of Lithium Niobate on Silicon Nitride.
- Author
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Tom Vanackere, Maximilien Billet, Camiel Op de Beeck, Stijn Poelman, Gunther Roelkens, Stéphane Clemmen, and Bart Kuyken
- Published
- 2020
- Full Text
- View/download PDF
4. Ultra-Dense III-V-on-Silicon Nitride Frequency Comb Laser.
- Author
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Stijn Cuyvers, Bahawal Haq, Camiel Op de Beeck, Stijn Poelman, Artur Hermans, Zheng Wang 0036, Gunther Roelkens, Kasper Van Gasse, and Bart Kuyken
- Published
- 2020
- Full Text
- View/download PDF
5. III-V-on-Silicon-Nitride Mode-Locked Lasers.
- Author
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Bart Kuyken, Stijn Cuyvers, Artur Hermans, Stijn Poelman, Camiel Op de Beeck, Bahawal Haq, Kasper Van Gasse, Jon ø. Kjellman, Charles Caër, Günther Roelkens, Philippe Soussan, and Xavier Rottenberg
- Published
- 2022
6. High-speed photodiodes on silicon nitride with a bandwidth beyond 100 GHz
- Author
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Dennis Maes, Luis Reis, Stijn Poelman, Ewoud Vissers, Vanessa Avramovic, Mohammed Zaknoune, Gunther Roelkens, Sam Lemey, Emilien Peytavit, Bart Kuyken, Department of Information Technology (INTEC), Universiteit Gent = Ghent University (UGENT), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), Photonics Research Group, Universiteit Gent = Ghent University (UGENT)-Universiteit Gent = Ghent University (UGENT), OSA, Renatech Network, PCMP CHOP, and CMNF
- Subjects
[SPI]Engineering Sciences [physics] ,Technology and Engineering - Abstract
Session Photodetection (SM3K); International audience; Next-generation telecommunication systems will rely on photonic integrated circuits. However, Silicon Nitride (SiN) photonic platforms do not natively provide high-speed photodiodes. We integrated a waveguide-coupled UTC photodiode on a SiN platform using the scalable micro-transfer-printing technology. These diodes show a responsivity up to 0 . 45 A/W, a dark current below 10 nA and a 3 dB-bandwidth beyond 100 GHz, even at zero-bias. As such, high-performance photodetectors are available on silicon-nitride photonic platforms.
- Published
- 2022
7. High-Yield Heterogeneous Integration of Silicon and Lithium Niobate Thin Films
- Author
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Stijn Cuyvers, Tom Vanackere, Tom Vandekerckhove, Stijn Poelman, Camiel Op de Beeck, Jasper De Witte, Artur Hermans, Kasper Van Gasse, Nathalie Picqué, Dries Van Thourhout, Gunther Roelkens, Stéphane Clemmen, and Bart Kuyken
- Abstract
Microtransfer printing of silicon and lithium niobate thin films on generic integrated photonic platforms is demonstrated. An unprecedented integration yield is achieved using crack barriers as a way to mitigate stress-induced shears in the material.
- Published
- 2022
8. On-chip electro-optic frequency comb generation using a heterogeneously integrated laser
- Author
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Isaac Luntadila Lufungula, Amirhassan Shams-Ansari, Dylan Renaud, Camiel Op de Beeck, Stijn Cuyvers, Stijn Poelman, Gunther Roelkens, Marko Loncar, and Bart Kuyken
- Abstract
We demonstrate the first on-chip resonant electro-optic frequency comb source on thin-film lithium niobate with an electrically-pumped heterogeneously integrated laser.
- Published
- 2022
9. Hybrid integrated mode- locked laser using a GaAs-based 1064 nm gain chip and a SiN external cavity
- Author
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Ewoud Vissers, Stijn Poelman, Hans Wenzel, Heike Christopher, Kasper Van Gasse, Andrea Knigge, and Bart Kuyken
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Technology and Engineering ,LOCKING ,Atomic and Molecular Physics, and Optics - Abstract
External cavity mode-locked lasers could be used as comb sources for high volume application such as LIDAR and dual comb spectroscopy. Currently demonstrated chip scale integrated mode-locked lasers all operate in the C-band. In this paper, a hybrid-integrated external cavity mode-locked laser working at 1064 nm is demonstrated, a wavelength beneficial for optical coherence tomography or Raman spectroscopy applications. Additionally, optical injection locking is demonstrated, showing an improvement in the optical linewidth, and an increased stability of the comb spectrum. (c) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
- Published
- 2022
10. Universally printable single-mode laser on low-index platforms
- Author
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Isaac Luntadila Lufungula, Amirhassan Shams-Ansari, Dylan Renaud, Camiel Op de Beeck, Stijn Cuyvers, Stijn Poelman, Gunther Roelkens, Marko Loncar, and Bart Kuyken
- Abstract
Heterogeneous laser integration usually entails a platform-dependent process flow and design. We experimentally show a single-mode laser that can be printed on all platforms with n plat f orm = 1.7 − 2.3 without changing the design or process flow.
- Published
- 2022
11. Hybrid-integrated extended cavity mode-locked laser using SiN and a generic III/V platform
- Author
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Bart Kuyken, Kasper Van Gasse, Stijn Poelman, and Ewoud Vissers
- Subjects
Materials science ,business.industry ,Ranging ,Laser ,law.invention ,Mode-locking ,law ,Phase noise ,Calibration ,Optoelectronics ,System on a chip ,Photolithography ,business ,Spectrograph - Abstract
Current fiber-based mode-locked lasers are already used in several applications, such as laser eye surgery and spectrograph calibration in the hunt for exoplanets. Miniaturizing and integrating such lasers can enable mass production which could result in new applications, for example distributed sensing of greenhouse gasses [1] and high-performance ranging [2] . Currently, the best performing integrated mode-locked lasers use an extended on-chip cavity. These have been shown on single chips in several III/V and heterogeneous platforms, by using active waveguides for gain, and passive waveguides for the low loss extended cavity [3] , [4] . In this work, these lasers are improved upon by butt-coupling an SiN extended cavity to the gain waveguides in a generic III/V platform, replacing the relatively lossy passive InP waveguides.
- Published
- 2021
12. Heterogeneous integration of uni-travelling-carrier photodiodes using micro-transfer-printing on a silicon-nitride platform
- Author
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Sam Lemey, Camiel Op de Beeck, Dennis Maes, Muhammad Muneeb, Gunther Roelkens, Bart Kuyken, Emilien Peytavit, Maximilien Billet, Mohammed Zaknoune, Stijn Poelman, Department of Information Technology (INTEC), Universiteit Gent = Ghent University [Belgium] (UGENT), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Universiteit Gent = Ghent University (UGENT), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and Renatech Network
- Subjects
Materials science ,Technology and Engineering ,business.industry ,Optical power ,7. Clean energy ,Waveguide (optics) ,Photodiode ,law.invention ,chemistry.chemical_compound ,Responsivity ,[SPI]Engineering Sciences [physics] ,Silicon nitride ,chemistry ,law ,Transfer printing ,Optoelectronics ,Quantum efficiency ,Photonics ,business ,ComputingMilieux_MISCELLANEOUS - Abstract
High-speed photodiodes often compromise responsivity in exchange for a reduced footprint. However, using waveguide photodiodes circumvents this limitation [1] . We combine uni-travelling-carrier photodiodes (UTC PDs) on a silicon nitride (SiN) photonic platform to achieve both high responsivity and high speed detectors. The SiN-platform has excellent properties such as low-loss waveguides and does not suffer from two-foton absorption at high optical power. A high responsivity is obtained through evanescent coupling of waveguide UTC photodiodes to SiN waveguides while still maintaining a small footprint.
- Published
- 2021
13. Realization of fabrication-tolerant Si3N4-Si mode transformers
- Author
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Stijn Poelman, Stijn Cuyvers, Jasper De Witte, Bart Kuyken, and Dries Van Thourhout
- Subjects
Materials science ,Fabrication ,Technology and Engineering ,Silicon ,business.industry ,coupled mode theory ,Mode (statistics) ,chemistry.chemical_element ,Laser ,law.invention ,chemistry ,law ,Mode transformer ,Optoelectronics ,business ,Transformer ,Realization (systems) ,microtransfer printing - Abstract
A III-V/Si/Si 3 N 4 structure critical in realizing high-performance lasers can be fabricated using microtransfer printing. This approach poses stringent requirements on the $\text{Si}_{3}\mathrm{N}_{4}-\text{Si}$ couplers. Accordingly, we realized $174\ \mu \mathrm{m}$ long, fabrication-tolerant Si tapers with simulated losses below 0.8 dB up to 750 nm misalignment.
- Published
- 2021
14. Dual-comb spectroscopy with two on-chip III-V-on-silicon 1-GHz mode-locked lasers
- Author
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Nathalie Picqué, Jeong Hyun Huh, Gunther Roelkens, Zaijun Chen, K. Van Gasse, Stijn Poelman, Theodor W. Hänsch, Zhechao Wang, E. Vincentini, and Bart Kuyken
- Subjects
Silicon photonics ,Materials science ,Technology and Engineering ,Spectrometer ,Silicon ,business.industry ,chemistry.chemical_element ,Physics::Optics ,Astrophysics::Cosmology and Extragalactic Astrophysics ,Laser ,Semiconductor laser theory ,law.invention ,Interferometry ,chemistry ,Mode-locking ,law ,Optoelectronics ,Physics::Atomic Physics ,business ,Spectroscopy - Abstract
A dual-comb interferometer with two semiconductor lasers on silicon photonic chips enables an optical resolution of 1 GHz, over a 0.7-THz span. The spectrometer di- rectly and unambiguously samples near-infrared rovibrational transitions without spectral interleaving.
- Published
- 2021
15. Hybrid modeling approach for mode-locked laser diodes with cavity dispersion and nonlinearity
- Author
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Stijn Poelman, Stijn Cuyvers, Kasper Van Gasse, and Bart Kuyken
- Subjects
RING ,Technology and Engineering ,LOCKING ,Science ,Soliton (optics) ,02 engineering and technology ,01 natural sciences ,Article ,law.invention ,010309 optics ,020210 optoelectronics & photonics ,Engineering ,law ,0103 physical sciences ,Dispersion (optics) ,0202 electrical engineering, electronic engineering, information engineering ,ABSORPTION ,SILICON ,Diode ,Physics ,Multidisciplinary ,business.industry ,Laser ,Pulse (physics) ,PULSES ,Nonlinear system ,TRAVELING-WAVE MODEL ,Semiconductor ,Optics and photonics ,Optical cavity ,Medicine ,Optoelectronics ,SELF-PHASE MODULATION ,LASER ,REFRACTIVE-INDEX ,GAIN ,business ,GENERATION - Abstract
Semiconductor-based mode-locked lasers, integrated sources enabling the generation of coherent ultra-short optical pulses, are important for a wide range of applications, including datacom, optical ranging and spectroscopy. As their performance remains largely unpredictable due to the lack of commercial design tools and the poorly understood mode-locking dynamics, significant research has focused on their modeling. In recent years, traveling-wave models have been favored because they can efficiently incorporate the rich semiconductor physics of the laser. However, thus far such models struggle to include nonlinear and dispersive effects of an extended passive laser cavity, which can play an important role for the temporal and spectral pulse evolution and stability. To overcome these challenges, we developed a hybrid modeling strategy by unifying the traveling-wave modeling technique for the semiconductor laser sections with a split-step Fourier method for the extended passive laser cavity. This paper presents the hybrid modeling concept and exemplifies for the first time the significance of the third order nonlinearity and dispersion of the extended cavity for a 2.6 GHz III–V-on-Silicon mode-locked laser. This modeling approach allows to include a wide range of physical phenomena with low computational complexity, enabling the exploration of novel operating regimes such as chip-scale soliton mode-locking.
- Published
- 2020
16. Micro-Transfer Printing of Lithium Niobate on Silicon Nitride
- Author
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Camiel Op de Beeck, Stéphane Clemmen, Bart Kuyken, Tom Vanackere, Stijn Poelman, Maximilien Billet, and Gunther Roelkens
- Subjects
Technology and Engineering ,Materials science ,business.industry ,Lithium niobate ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,010309 optics ,chemistry.chemical_compound ,Silicon nitride ,chemistry ,Transfer printing ,Proof of concept ,Modulation ,Product (mathematics) ,0103 physical sciences ,Optoelectronics ,Insertion loss ,0210 nano-technology ,business - Abstract
Successful micro-transfer printing of lithium niobate on a silicon nitride platform is demonstrated. A proof of concept electro-optical modulator is fabricated using this hybrid integration method which shows a half-wave voltage-length product $V_{\pi}L_{\pi}=5.5\ Vcm$ and insertion losses of 7 dB.
- Published
- 2020
17. III-V-on-silicon mode-locked lasers with 1-GHz line spacing for dual-comb spectroscopy
- Author
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Gunther Roelkens, K. Van Gasse, Theodor W. Hänsch, Nathalie Picqué, Bart Kuyken, Jeong Hyun Huh, Zaijun Chen, Stijn Poelman, and Zhechao Wang
- Subjects
Optical amplifier ,Heterodyne ,Technology and Engineering ,Materials science ,Optical fiber ,business.industry ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Laser ,01 natural sciences ,Fourier transform spectroscopy ,law.invention ,010309 optics ,Interferometry ,Mode-locking ,law ,0103 physical sciences ,Optoelectronics ,0210 nano-technology ,business ,Spectroscopy - Abstract
We demonstrate dual-comb interferometry and spectroscopy with a III-V-on-silicon passively mode- locked laser of 1-GHz repetition rate and 1-THz span. We heterodyne the on-chip device with an electro-optic modulator comb for initial assessment. (C) 2020 The Author(s)
- Published
- 2020
18. Novel Hybrid Modeling Strategy for Semiconductor Mode-Locked Lasers
- Author
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Bart Kuyken, Stijn Poelman, Kasper Van Gasse, Stijn Cuyvers, Schunemann, P., Saraceno, C., Mirov, S., Taccheo, S., Nilsson, J., Petersen, A., Mordaunt, D., and Trbola, J.
- Subjects
Technology and Engineering ,Materials science ,business.industry ,Mode (statistics) ,Physics::Optics ,Laser ,Pulse shaping ,Semiconductor laser theory ,law.invention ,Pulse propagation ,symbols.namesake ,Semiconductor ,Fourier transform ,law ,symbols ,Optoelectronics ,business ,Hybrid model - Abstract
We demonstrate a novel hybrid model for semiconductor mode-locked lasers by combining the merits of a traveling-wave model for the active regions and a split-step Fourier algorithm for the extended passive cavity.
- Published
- 2020
19. High-resolution dual-comb gas-phase spectroscopy with a mode-locked laser on a photonic chip
- Author
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Zhechao Wang, Stijn Poelman, K. Van Gasse, Nathalie Picqué, Bart Kuyken, Zaijun Chen, Jeong Hyun Huh, Theodor W. Hänsch, Gunther Roelkens, and Edoardo Vicentini
- Subjects
Optical amplifier ,Materials science ,Absorption spectroscopy ,business.industry ,Comb generator ,02 engineering and technology ,Rotational–vibrational spectroscopy ,021001 nanoscience & nanotechnology ,Laser ,01 natural sciences ,law.invention ,010309 optics ,Mode-locking ,law ,0103 physical sciences ,Optoelectronics ,Photonics ,0210 nano-technology ,business ,Spectroscopy - Abstract
An integrated III-V-on-silicon mode-locked laser enables the first on-chip comb generator of 1.0-GHz line-spacing for direct interrogation of gas-phase narrow rovibrational transitions in molecules. Its flat-top spectrum empowers real-time multiplexed spectroscopy without any scanning elements.
- Published
- 2020
- Full Text
- View/download PDF
20. III/V-on-lithium niobate amplifiers and lasers
- Author
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Wentao Jiang, Stijn Cuyvers, Stijn Poelman, Jeremy D. Witmer, Amir H. Safavi-Naeini, Camiel Op de Beeck, Raphaël Van Laer, Gunther Roelkens, Bart Kuyken, Okan Atalar, Jason F. Herrmann, Bahawal Haq, Timothy P. McKenna, and Felix M. Mayor
- Subjects
Condensed Matter::Quantum Gases ,Optical amplifier ,Materials science ,business.industry ,Amplifier ,Lithium niobate ,Physics::Optics ,Laser ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,law.invention ,Condensed Matter::Materials Science ,Wavelength ,chemistry.chemical_compound ,chemistry ,law ,Optoelectronics ,Laser amplifiers ,Physics::Atomic Physics ,business - Abstract
We demonstrate electrically pumped, heterogeneously integrated lasers on thin-film lithium niobate, featuring electro-optic wavelength tunability.
- Published
- 2021
21. Low Noise Heterogeneous III‐V‐on‐Silicon‐Nitride Mode‐Locked Comb Laser
- Author
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Brian Corbett, Kasper Van Gasse, Agnieszka Gocalinska, Bart Kuyken, Artur Hermans, Camiel Op de Beeck, Zheng Wang, Stijn Cuyvers, Gunther Roelkens, Emanuele Pelucchi, Bahawal Haq, and Stijn Poelman
- Subjects
Technology and Engineering ,Materials science ,LINEWIDTH ,OPTICAL FREQUENCY COMB ,Ring laser ,semiconductor lasers ,02 engineering and technology ,01 natural sciences ,Noise (electronics) ,law.invention ,Semiconductor laser theory ,010309 optics ,Laser linewidth ,law ,0103 physical sciences ,Diode ,RING LASER ,SPECTROSCOPY ,business.industry ,transfer printing ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Laser ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Small form factor ,mode-locked lasers ,QUANTUM-DOT ,quantum well lasers ,dual-comb spectroscopy ,CAVITY ,WAVE ,Optoelectronics ,Radio frequency ,0210 nano-technology ,business ,INTEGRATION ,TIMING JITTER ,heterogeneous integration ,GENERATION - Abstract
Generating optical combs in a small form factor is of utmost importance for a wide range of applications such as datacom, LIDAR, and spectroscopy. Electrically powered mode-locked diode lasers provide combs with a high conversion efficiency, while simultaneously allowing for a dense spectrum of lines. In recent years, a number of integrated chip scale mode-locked lasers have been demonstrated. However, thus far these devices suffer from significant linear and nonlinear losses in the passive cavity, limiting the attainable cavity size and noise performance, eventually inhibiting their application scope. Here, we leverage the ultra-low losses of silicon-nitride waveguides to demonstrate a heterogeneously integrated III-V-on-silicon-nitride passively mode-locked laser with a narrow 755 MHz line spacing, a radio frequency linewidth of 1 Hz and an optical linewidth below 200 kHz. Moreover, these comb sources are fabricated with wafer scale technology, hence enabling low-cost and high volume manufacturable devices.
- Published
- 2021
22. A hybrid integration strategy for compact, broadband, and highly efficient millimeter-wave on-chip antennas
- Author
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Stijn Poelman, Bart Smolders, Dries Vande Ginste, Lars De Brabander, A. C. F. Reniers, Steven Verstuyft, Olivier Caytan, Hendrik Rogier, Bart Kuyken, Laurens Bogaert, Quinten Van den Brande, Sam Lemey, Igor Lima de Paula, Stijn Cuyvers, Electromagnetics, Center for Wireless Technology Eindhoven, EM Antenna Systems Lab, EM-Metrology Lab, and Center for Care & Cure Technology Eindhoven
- Subjects
Technology and Engineering ,Frequency band ,millimeter-wave (mmWave) ,on-chip antenna ,02 engineering and technology ,Hardware_PERFORMANCEANDRELIABILITY ,0202 electrical engineering, electronic engineering, information engineering ,Hardware_INTEGRATEDCIRCUITS ,System on a chip ,Antenna feed ,Electrical and Electronic Engineering ,Patch antenna ,Physics ,business.industry ,020206 networking & telecommunications ,high ,Chip ,Antenna efficiency ,high efficiency ,efficiency ,Extremely high frequency ,Optoelectronics ,ARRAY ,broadband ,Antenna (radio) ,business ,Air-filled substrate integrated waveguide (AFSIW) - Abstract
A novel hybrid integration strategy for compact, broadband, and highly efficient millimeter-wave (mmWave) on-chip antennas is demonstrated by realizing a hybrid on-chip antenna, operating in the [27.5–29.5] GHz band. A cavity-backed stacked patch antenna is implemented on a 600 $\mu$ m thick silicon substrate by using air-filled substrate-integrated-waveguide technology. A hybrid on-chip approach is adopted in which the antenna feed and an air-filled cavity are integrated on-chip, and the stacked patch configuration is implemented on a high-frequency printed circuit board (PCB) laminate that supports the chip. A prototype of the hybrid on-chip antenna is validated, demonstrating an impedance bandwidth of 3.7 GHz. In free-space conditions, a boresight gain of 7.3 dBi and a front-to-back ratio of 20.3 dB at 28.5 GHz are achieved. Moreover, the antenna is fabricated using standard silicon fabrication techniques and features a total antenna efficiency above 90% in the targeted frequency band of operation. The high performance, in combination with the compact antenna footprint of $\text{0.49}\,\lambda _{\rm min} \times \text{0.49}\,\lambda _{\rm min}$ , makes it an ideal building block to construct broadband antenna arrays with a broad steering range.
- Published
- 2019
23. Hybrid integrated mode-locked laser diodes with a silicon nitride extended cavity
- Author
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Camiel Op de Beeck, Ewoud Vissers, Bart Kuyken, Kasper Van Gasse, and Stijn Poelman
- Subjects
Technology and Engineering ,Materials science ,PHOTONIC INTEGRATION ,Orders of magnitude (temperature) ,FOS: Physical sciences ,02 engineering and technology ,7. Clean energy ,01 natural sciences ,law.invention ,Semiconductor laser theory ,010309 optics ,Laser linewidth ,chemistry.chemical_compound ,Optics ,law ,0103 physical sciences ,Diode ,business.industry ,021001 nanoscience & nanotechnology ,Laser ,Atomic and Molecular Physics, and Optics ,Semiconductor ,Silicon nitride ,chemistry ,Photonics ,0210 nano-technology ,business ,Optics (physics.optics) ,Physics - Optics - Abstract
Integrated semiconductor mode-locked lasers have shown promise in many applications and are readily fabricated using generic InP photonic integration platforms. However, the passive waveguides offered in such platforms have relatively high linear and nonlinear losses that limit the performance of these lasers. By extending such lasers with, for example, an external cavity the performance can be increased considerably. In this paper, we demonstrate for the first time that a high-performance mode-locked laser can be achieved with a butt-coupling integration technique using chip scale silicon nitride waveguides. A platform-independent SiN/SU8 coupler design is used to couple between the silicon nitride external cavity and the III/V active chip. Mode-locked lasers at 2.18 GHz and 15.5 GHz repetition rates are demonstrated with Lorentzian RF linewidths several orders of magnitude smaller than what has been demonstrated on monolithic InP platforms. The RF linewidth was 31 Hz for the 2.18 GHz laser., Submitted to Optics Express
- Published
- 2021
24. Ultra-Dense III-V-on-Silicon Nitride Frequency Comb Laser
- Author
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Gunther Roelkens, Stijn Cuyvers, Artur Hermans, Stijn Poelman, Zheng Wang, Bahawal Haq, Bart Kuyken, Kasper Van Gasse, and Camiel Op de Beeck
- Subjects
0301 basic medicine ,Technology and Engineering ,Materials science ,business.industry ,02 engineering and technology ,Nitride ,021001 nanoscience & nanotechnology ,Laser ,law.invention ,Optical pumping ,03 medical and health sciences ,chemistry.chemical_compound ,Frequency comb ,Laser linewidth ,030104 developmental biology ,Silicon nitride ,chemistry ,law ,Optical recording ,Optoelectronics ,Radio frequency ,0210 nano-technology ,business - Abstract
A heterogeneously integrated III-V-on-silicon nitride mode-locked laser is demonstrated. The device is fabricated by microtransfer printing an InP/InAlGaAs-based multiple-quantum-well coupon. A dense comb with a 755 MHz repetition rate, a 1 Hz ASE limited RF linewidth and a 200 kHz optical linewidth is achieved.
- Full Text
- View/download PDF
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