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A D-band (110-170 GHz) ultra high data rate link is presented and characterized. The circuits are realized in a commercial 130 nm silicon germanium (SiGe) BiCMOS process. The 3-dB bandwidth for both transmitter (Tx) and receiver (Rx) is between 125 - 165 GHz, resulting in a 40 GHz bandwidth. The communication link has demonstrated transmissions up to 102 Gbps using 8-phase shift keying (PSK) modulation over a one meter long foam-cladded polymer microwave fiber (PMF) with a bit error rate (BER) of $2.1\times 10^{-3}$ . Using direct quadrature phase shift keying (QPSK), 56 Gbps was reached with a BER $< 10^{-12}$ . Total chip area for Tx and Rx combined, including pads, is 4.2 mm2.