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Defect engineering plays an important role in tailoring the electronic transport properties of van der Waals materials. However, it is usually achieved through tuning the type and concentration of defects, rather than dynamically reconfiguring their spatial distribution. Here, we report temperature-sensitive spatial redistribution of defects in PdSe2 thin flakes through scanning tunneling microscopy (STM). We observe that the spatial distribution of Se vacancies in PdSe2 flakes exhibits a strong anisotropic characteristic at 80 K, and that this orientation-dependent feature is weakened when temperature is raised. Moreover, we carry out transport measurements on PdSe2 thin flakes and show that the anisotropic features of carrier mobility and phase coherent length are also sensitive to temperature. Combining with theoretical analysis, we conclude that temperature-driven defect spatial redistribution could interpret the temperature-sensitive electrical transport behaviors in PdSe2 thin flakes. Our work highlights that engineering spatial distribution of defects in the van der Waals materials, which has been overlooked before, may open up a new avenue to tailor the physical properties of materials and explore new device functionalities., Comment: 24 pages, 12 figures, accepted by Physical Review Materials

Drawing inspiration from bilayer graphene, this paper introduces its photonic analog comprising two stacked graphene-like photonic crystals, that are coupled in the near-field through spoof surface plasmons. Beyond the twist degree of freedom that can radically alter the band structure of the bilayer photonic graphene, the photonic dispersion can be also tailored via the interlayer coupling which exhibits an exponential dependence on the distance between the two photonic crystals. We theoretically, numerically, and experimentally characterize the band structures of AA- and AB-stacked bilayer photonic graphene, as well as for twisted bilayer photonic graphene with even and odd sublattice exchange symmetries. Furthermore, we numerically predict the existence of magic angles in bilayer photonic graphene, which are associated with ultra-flat bands resulted from interlayer hybridization. Finally, we demonstrate that the bilayer photonic graphene at a particular twist angle satisfying even sublattice exchange symmetry is a high-order photonic topological insulator. The proposed bilayer photonic graphene could constitute a useful platform for identifying new quantum materials and inspiring next-generation photonic devices with new degrees of freedom and emerging functionality.

Band topology and related spin (or pseudo-spin) physics of photons provide us with a new dimension for manipulating light, which is potentially useful for information communication and data storage. Especially, the quantum spin Hall effect of light, where electromagnetic waves propagate along surfaces of samples with strong spin-momentum locking, paves the way for achieving topologically protected photonic spin transport. Recently, the conventional bulk-edge correspondence of the band topology has been extended to higher-order cases that enables the explorations of topological states with codimensions larger than 1 such as hinge and corner states. Here, for the first time, we demonstrate a higherorder quantum spin Hall effect of light by utilizing an all-dielectric C6v-symmetric photonic crystal. We observe corner states with opposite pseudospin polarizations at different corners owing to nontrivial higher-order topology and finite spin-spin coupling. By applying the spin-polarized excitation sources, we can selectively excite the corner states at different spatial positions through spin-momentum-locked decaying edge states, resembling the quantum spin Hall effect in a higher-order manner. Our work which breaks the barriers between the spin photonics and higher-order topology opens the frontiers for studying lower-dimensional spinful classical surface waves and supports explorations in robust communications., Comment: 24 pages, 4 figures

Nano-structuring is an extremely promising path to high performance thermoelectrics. Favorable improvements in thermal conductivity are attainable in many material systems, and theoretical work points to large improvements in electronic properties. However, realization of the electronic benefits in practical materials has been elusive experimentally. A key challenge is that experimental identification of the quantum confinement length, below which the thermoelectric power factor is significantly enhanced, remains elusive due to lack of simultaneous control of size and carrier density. Here we investigate gate tunable and temperature-dependent thermoelectric transport in $\gamma$ phase indium selenide ($\gamma$ InSe, n type semiconductor) samples with thickness varying from 7 to 29 nm. This allows us to properly map out dimension and doping space. Combining theoretical and experimental studies, we reveal that the sharper pre-edge of the conduction-band density of states arising from quantum confinement gives rise to an enhancement of the Seebeck coefficient and the power factor in the thinner InSe samples. Most importantly, we experimentally identify the role of the competition between quantum confinement length and thermal de Broglie wavelength in the enhancement of power factor. Our results provide an important and general experimental guideline for optimizing the power factor and improving the thermoelectric performance of two-dimensional layered semiconductors., Comment: 26 page, 5 figures

Metallic transition metal dichalcogenides (TMDs) have exhibited various exotic physical properties and hold the promise of novel optoelectronic and topological devices applications. However, the synthesis of metallic TMDs is based on gas-phase methods and requires high temperature condition. As an alternative to the gas-phase synthetic approach, lower temperature eutectic liquid-phase synthesis presents a very promising approach with the potential for larger-scale and controllable growth of high-quality thin metallic TMDs single crystals. Herein, we report the first realization of low-temperature eutectic liquid-phase synthesis of type-II Dirac semimetal PtTe2 single crystals with thickness ranging from 2 to 200 nm. The electrical measurement of synthesized PtTe2 reveals a record-high conductivity of as high as 3.3*106 S/m at room temperature. Besides, we experimentally identify the weak antilocalization behavior in the type-II Dirac semimetal PtTe2 for the first time. Furthermore, we develop a simple and general strategy to obtain atomically-thin PtTe2 crystal by thinning as-synthesized bulk samples, which can still retain highly crystalline and exhibits excellent electric conductivity. Our results of controllable and scalable low-temperature eutectic liquid-phase synthesis and layer-by-layer thinning of high-quality thin PtTe2 single crystals offer a simple and general approach for obtaining different thickness metallic TMDs with high-melting point transition metal.

The current integrated circuit (IC) technology based on conventional MOS-FET (metal-oxide-semiconductor field-effect transistor) is approaching the limit of miniaturization with increasing demand on energy. Several analog circuit applications based on graphene FETs have been demonstrated with less components comparing to the conventional technology. However, low on/off current ratio caused by the semimetal nature of graphene has severely hindered its practical applications. Here we report a graphene/MoTe2 van der Waals (vdW) vertical transistor with V-shaped ambipolar field effect transfer characteristics to overcome this challenge. Investigations on temperature dependence of transport properties reveal that gate tunable asymmetric barriers of the devices are account for the ambipolar behaviors. Furthermore, to demonstrate the analog circuit applications of such vdW vertical transistors, we successfully realized output polarity controllable (OPC) amplifier and frequency doubler. These results enable vdW heterojunction based electronic devices to open up new possibilities for wide perspective in telecommunication field., Comment: To appear on Advanced Electronics Materials; 26 pages, 5 figures, 7 supplementary figures