30 results on '"Su, Sheng-Kai"'
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2. Barrier Booster for Remote Extension Doping and its DTCO for 1D & 2D FETs
3. Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping
4. High-performance monolayer MoS2 nanosheet GAA transistor
5. Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors
6. High-performance monolayer MoS2 nanosheet GAA transistor.
7. Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors.
8. Small Molecule Additives to Suppress Bundling in Dimensional‐Limited Self‐Alignment Method for High‐Density Aligned Carbon Nanotube Array.
9. Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS$_{\text{2}}$ Channel Transistors
10. Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS2 Channel Transistors
11. High-Performance Two-Dimensional Electronics with a Noncontact Remote Doping Method.
12. First Demonstration of GAA Monolayer-MoS2 Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length
13. pMOSFET with CVD-grown 2D semiconductor channel enabled by ultra-thin and fab-compatible spacer doping
14. Nearly Ideal Subthreshold Swing in Monolayer MoS₂ Top-Gate nFETs with Scaled EOT of 1 nm
15. Comprehensive Physics Based TCAD Model for 2D MX2 Channel Transistors
16. Impact of Metal Hybridization on Contact Resistance and Leakage Current of Carbon Nanotube Transistors
17. How 2D semiconductors could extend Moore’s law
18. Perspective on Low-dimensional Channel Materials for Extremely Scaled CMOS
19. Well-thickness dependent electron transport effective mass and mobility in Sb-based quantum wells
20. Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs
21. Layered Semiconducting 2D Materials for Future Transistor Applications
22. Impact of Schottky Barrier on the Performance of Two-Dimensional Material Transistors
23. Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS2 Channel Directly Grown on SiO$_{{x}}$ /Si Substrates Using Area-Selective CVD Technology
24. First demonstration of 40-nm channel length top-gate WS2 pFET using channel area-selective CVD growth directly on SiOx/Si substrate
25. Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS2 Channel Directly Grown on SiOx/Si Substrates Using Area-Selective CVD Technology.
26. A Simulation Perspective: The Potential and Limitation of Ge GAA CMOS Devices
27. GaAs Polariton Interference in Magnetic Field: Oblique Incident Ellipsometry Measurement
28. Low temperature and high magnetic field spectroscopic ellipsometry system
29. High-density ordered triangular Si nanopillars with sharp tips and varied slopes: one-step fabrication and excellent field emission properties
30. High-performance monolayer MoS 2 nanosheet GAA transistor.
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