142 results on '"Suihkonen, Sami"'
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2. Ultrasensitive Monolithic Dopamine Microsensors Employing Vertically Aligned Carbon Nanofibers
3. Pushing the limits of non-radiative recombination suppression in GaAs/GaInP light-emitting diodes by doping profile engineering.
4. Metalorganic Chemical Vapor Deposition of AlN on High Degree Roughness Vertical Surfaces for MEMS Fabrication
5. Metalorganic chemical vapor deposition of aluminum nitride on vertical surfaces
6. Ultrasensitive monolithic dopamine microsensors employing vertically aligned carbon nanofibers.
7. Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon
8. Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal–Semiconductor–Metal Photodetectors, Based on Epitaxial GaN/Si(111)
9. High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si(111)
10. Stability of materials in supercritical ammonia solutions
11. Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal– Semiconductor–Metal Photodetectors, Based on Epitaxial GaN/Si(111)
12. Photocatalytic degradation of dyes by CdS microspheres under near UV and blue LED radiation
13. Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing
14. Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved I ON/I OFF Operating at 473 K
15. A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer
16. Ga-vacancy activation under low energy electron irradiation in GaN-based materials
17. MOVPE growth of GaN on patterned 6-inch Si wafer
18. Atomic Layer Deposition of PbS Thin Films at Low Temperatures
19. MOCVD Al(Ga)N Insulator for Alternative Silicon-On-Insulator Structure
20. MOVPE growth of GaN on patterned 6-inch Si wafer
21. Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application
22. Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm
23. Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved ION/IOFF Operating at 473 K.
24. Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN.
25. Identifying threading dislocation types in ammonothermally grown bulk α-GaN by confocal Raman 3-D imaging of volumetric stress distribution
26. In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2, H2 and vacuum atmospheres
27. p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si
28. N-polar AlN buffer growth by metal–organic vapor phase epitaxy for transistor applications
29. A new system for sodium flux growth of bulk GaN
30. Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application.
31. AlN metal–semiconductor field-effect transistors using Si-ion implantation
32. Diffusion-Driven Charge Transport in Light Emitting Devices
33. Atomic layer etching of gallium nitride (0001)
34. Elimination of Lateral Resistance and Current Crowding in Large‐Area LEDs by Composition Grading and Diffusion‐Driven Charge Transport
35. Defects in Single Crystalline Ammonothermal Gallium Nitride
36. Elimination of resistive losses in large-area LEDs by new diffusion-driven devices
37. Evolution of impurity incorporation during ammonothermal growth of GaN
38. A new system for sodium flux growth of bulk GaN. Part I: System development
39. Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN
40. Infrared absorption of hydrogen-related defects in ammonothermal GaN
41. A technique for large-area position-controlled growth of GaAs nanowire arrays
42. Diffusion-driven current transport to near-surface nanostructures
43. Diffusion-Driven Charge Transport in Light Emitting Devices.
44. Diffusion Injection in a Buried Multiquantum Well Light-Emitting Diode Structure
45. Defect structure of a free standing GaN wafer grown by the ammonothermal method
46. Terahertz emission and reflection associated with surface plasmon polaritons in n-GaN microstructures
47. Large-area analysis of dislocations in ammonothermal GaN by synchrotron radiation X-ray topography
48. Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALD
49. Optical degradation and defect activation in MOVPE grown near surface InGaN quantum wells under low energy electron beam irradiation
50. Band-Edge Luminescence Degradation by Low Energy Electron Beam Irradiation in GaN Grown by Metal–Organic Vapor Phase Epitaxy in H2 and N2 Ambients
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