42 results on '"Sumakeris, Joseph J."'
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2. Performance and stability of large-area 4H-SiC 10-kV junction barrier Schottky rectifiers
3. Drift-free 10-kV, 20-A 4H-SiC PiN diodes
4. Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy
5. Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices
6. Progress on the Development of 10 kV 4H-SiC Pin Diodes for High Current/High Voltage Power Handling Applications
7. Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers
8. Structure of Carrot Defects in 4H-SiC Epilayers
9. Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode Structures
10. High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications
11. Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices
12. Evolution of Drift-Free, High Power 4H-SiC PiN Diodes
13. Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields
14. Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices
15. Non-Destructive Electro- and Photo-Luminescence Imaging of Dislocations in SiC Epitaxy
16. Dislocation Characterization in 4H-SiC Crystals
17. Using Ray Tracing Simulations for Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method
18. Bulk Growth of Large Area SiC Crystals
19. Defect Status in SiC Manufacturing
20. SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices
21. 12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance
22. A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching
23. Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers
24. Critical Technical Issues in High Voltage SiC Power Devices
25. Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates
26. Design and Characterization of High-Voltage 4H-SiC p-IGBTs
27. Non-Destructive Electro- and Photo-Luminescence Imaging of Dislocations in SiC Epitaxy
28. HIGH POWER, DRIFT-FREE 4H-SiC PIN DIODES
29. Ultra High Power 10 kV, 50 A SiC PiN Diodes
30. HIGH POWER, DRIFT-FREE 4H-SiC PIN DIODES
31. Large Diameter 4H-SiC Substrates for Commercial Power Applications
32. RF Performance and Reliability of SiC MESFETs on High Purity Semi-Insulating Substrates
33. High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift
34. Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes
35. Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
36. Non-Destructive Electro- and Photo-Luminescence Imaging of Dislocations in SiC Epitaxy.
37. Silicon Carbide MESFET's for High-Power S-Band Applications
38. Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition
39. Performance of Low-Dark-Current 4H-SiC Avalanche Photodiodes With Thin Multiplication Layer.
40. A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching
41. Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers
42. Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices
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