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In kagome metal CsV_{3}Sb_{5}, multiple intertwined orders are accompanied by both electronic and structural instabilities. These exotic orders have attracted much recent attention, but their origins remain elusive. The newly discovered CsTi_{3}Bi_{5} is a Ti-based kagome metal to parallel CsV_{3}Sb_{5}. Here, we report angle-resolved photoemission experiments and first-principles calculations on pristine and Cs-doped CsTi_{3}Bi_{5} samples. Our results reveal that the van Hove singularity (vHS) in CsTi_{3}Bi_{5} can be tuned in a large energy range without structural instability, different from that in CsV_{3}Sb_{5}. As such, CsTi_{3}Bi_{5} provides a complementary platform to disentangle and investigate the electronic instability with a tunable vHS in kagome metals.

Kagome superconductors AV3Sb5 (A = K, Rb and Cs) have attracted much recent attention due to the coexistence of multiple exotic orders. Among them, the charge density wave (CDW) order has been shown to host various unconventional behaviors. Here, we investigate the CDW order by a combination of both bulk and surface doping methods. While element substitutions in bulk doping change both carriers and the crystal lattice, the surface doping primarily tunes the carrier concentration. As such, our results reveal a two-dimensional phase diagram of the CDW in doped CsV3Sb5. In the lightly bulk doped regime, the existence of CDW order is reversible by tuning the carrier concentration. But excessive bulk doping permanently destroys the CDW, regardless of the carrier doping level. These results provide insights to the origin of the CDW from both electronic and structural degrees of freedom. They also open an avenue for manipulating the exotic CDW order in Kagome superconductors. [ABSTRACT FROM AUTHOR]

Van Hove singularity (VHS) has been considered as a driving source for unconventional superconductivity. A VHS in two-dimensional (2D) materials consists of a saddle point connecting electron-like and hole-like bands. In a rare case, when a VHS appears at Fermi level, both electron-like and hole-like conduction can coexist, giving rise to an enhanced density of states as well as an attractive component of Coulomb interaction for unconventional electronic pairing. However, this van Hove scenario is often destroyed by an incorrect chemical potential or competing instabilities. Here, by using angle-resolved photoemission measurements, we report the observation of a VHS perfectly aligned with the Fermi level in a kagome superconductor CsV3-xTaxSb5 (x ~ 0.4), in which a record-high superconducting transition temperature is achieved among all the current variants of AV3Sb5 (A = Cs, Rb, K) at ambient pressure. Doping dependent measurements reveal the important role of van Hove scenario in boosting superconductivity, and spectroscopic-imaging scanning tunneling microscopy measurements indicate a distinct superconducting state in this system. The authors present ARPES and STM/STS measurements of the kagome superconductor CsV3-xTaxSb5. For the x = 0.4 Ta-doped sample, they report evidence for a van Hove singularity perfectly aligned with the Fermi level, and that the superconducting transition temperature is maximized at this doping. [ABSTRACT FROM AUTHOR]

An intelligent human–machine interface (HMI) is a crucial medium for exchanging information between people and electronics. As one of the most important HMI devices, touch screen sensors are widely applied in personal electronics in daily life. However, as the most commonly used touch screen sensor, capacitive sensors can only detect limited kinds of gestures such as touching and sliding. Here, a triboelectric touch‐free screen sensor (TSS) is reported for recognizing diverse gestures in a noncontact operating mode by utilizing the charges naturally carried on the human body. Compared with conventional capacitive sensors, the TSS is capable of detecting various gestures such as the drop and lift of finger with different speeds, making a fist, opening palm, and flipping palm with different directions. Based on the TSS, an intelligent noncontact screen control system is further developed, which is used to unlock the smartphone interface by the noncontact operating mode. This research for the first time proposes the concept that taking the human body itself to participate in triboelectric self‐powered noncontact sensing and provides a touch‐free design concept to develop the next generation of screen sensors. It can alter the usual way that people operating their personal electronics. [ABSTRACT FROM AUTHOR]