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41 results on '"Suryawanshi, Sachin R."'

8. High-performance field emission device utilizing vertically aligned carbon nanotubes-based pillar architectures

Author

Gupta, Bipin Kumar, primary, Kedawat, Garima, additional, Gangwar, Amit Kumar, additional, Nagpal, Kanika, additional, Kashyap, Pradeep Kumar, additional, Srivastava, Shubhda, additional, Singh, Satbir, additional, Kumar, Pawan, additional, Suryawanshi, Sachin R., additional, Seo, Deok Min, additional, Tripathi, Prashant, additional, More, Mahendra A., additional, Srivastava, O. N., additional, Hahm, Myung Gwan, additional, and Late, Dattatray J., additional

Published
2018
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36. Low frequency noise and photo-enhanced field emission from ultrathin PbBi2Se4 nanosheets.

Author

Suryawanshi, Sachin R., Guin, Satya N., Chatterjee, Arindom, Kashid, Vikas, More, Mahendra A., Late, Dattatray J., and Biswas, Kanishka

Abstract

Atomically thin two-dimensional layered materials have gained wide interest owing to their novel properties and potential for applications in nanoelectronic and optoelectronic devices. Here, we present the spectral analysis and photo-enhanced field emission studies of a layered intergrowth PbBi2Se4 nanosheet emitter, performed at the base pressure of ∼1 × 10−8 mbar. The emitter shows a turn-on field value of ∼4.80 V μm−1, corresponding to an emission current density of ∼1 μA cm−2. Interestingly, when the cathode was illuminated with visible light, it exhibited a lower turn-on field of ∼3.90 V μm−1, and a maximum emission current density of ∼893 μA cm−2 has been drawn at an applied electric field of ∼8.40 V μm−1. Furthermore, the photo-enhanced emission current showed reproducible, step-like switching behavior in synchronous with ON–OFF switching of the illumination source. The emission current–time plots reveal excellent stability over a duration of ∼6 h. Low-frequency noise is a significant limitation for the performance of nanoscale electronic devices. The spectral analysis performed on a Fast Fourier Transform (FFT) analyzer revealed that the observed noise is of 1/fα type, with the value of α∼0.99. The low frequency noise, photo-enhanced field emission, and reproducible switching behavior characterized with very fast rise and fall times propose the layered PbBi2Se4 nanosheet emitter as a new promising candidate for novel vacuum nano-optoelectronic devices. [ABSTRACT FROM AUTHOR]

Published
2016
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38. 3D Hetero-architecture of GdB6 nanoparticles on lessened cubic Cu2O nanowires: enhanced field emission behaviour.

Author

Suryawanshi, Sachin R., Singh, Anil K., Deo, Meenal, Late, Dattatray J., Sinha, Sucharita, and More, Mahendra A.

Subjects
*FIELD emission, *GADOLINIUM compounds, *NANOPARTICLES, *CUPROUS oxide, *SCANNING electron microscopes, *TRANSMISSION electron microscopy
Abstract

The field emission properties (FE) of a heteroarchitecture comprised of gadolinium hexaboride nanoparticles uniformly decorated over Cu2O nanoneedles (GdB6/Cu2O) have been investigated at the base pressure of ~1 × 10−8 mbar. Under the optimized pulsed laser deposition (PLD), a well-adhered coating of GdB6 nanoparticles on chemically synthesized cuprous oxide (Cu2O) nanoneedles has been obtained. A plausible growth mechanism of the hierarchical assembly of GdB6 nanoparticles on the Cu2O nanoneedles is explained on the basis of structural analysis carried out using SEM and TEM. A low turn-on field of ~2.3 V μm−1 (to draw an emission current density ~1 μA cm−2) is observed along with stable emission current at the preset value of ~2 μA over 4 h. The enhanced emission behaviour of the GdB6/Cu2O heteroarchitecture, in contrast to the pristine Cu2O nanoneedles, is attributed to its high aspect ratio and low work function. The observed FE results demonstrate GdB6/Cu2O heteroarchitecture as a potential candidate for application in various vacuum nano/microelectronic devices. [ABSTRACT FROM AUTHOR]

Published
2015
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39. The Fowler-Nordheim Behavior and Mechanism of Photo-Sensitive Field from SnS2 Nanosheets.

Author

Suryawanshi, Sachin R., Chaudhari, Nilima S., Warule, Sambhaji S., and More, Mahendra A.

Subjects
*TIN compounds, *VALENCE bands, *CURRENT density (Electromagnetism), *SEMICONDUCTORS, *SHEET metal, *ELECTRIC fields
Abstract

Here in, we report photo-sensitive field emission measurements of SnS2 nanosheets at base pressure of ~1x10-8 mbar are reported. The nonlinear Fowler-Nordheim (F-N) plot is elucidate according to a (F-N) model of calculation based on shift in a saturation of conduction band current density after light illumination and prevalence of valence band current density at high electric field values. The model of calculation suggests that the slope variation before and after visible light illumination of the F-N plot, in the high-field and low-field regions, does not depend on the magnitude of saturation but also depend on charge carrier (electron) concentration get increased in conduction band. The F-N model of calculation is important for the fundamental understanding of the photo-sensitive field emission mechanism of semiconducting SnS2. The replicate F-N plots exhibit similar features to those observed experimentally. The model calculation suggests that the nonlinearity of the F-N plot is a characteristic of the photo-enhanced energy band structure of the photo-sensitive semiconductor material. [ABSTRACT FROM AUTHOR]

Published
2015
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40. Synthesis and Field Emission Behaviour of Well Faceted In2Se3 micro-crystals.

Author

Kolhe, Panakj S., Suryawanshi, Sachin R., Shisode, Raju T., and More, Mahendra A.

Subjects
*NANOCRYSTAL synthesis, *INDIUM selenide, *FIELD emission, *THERMAL analysis, *MICROELECTRONICS
Abstract

Here in, we report synthesis of crystalline Indium Selenide (In2Se3) elegant microcrystals on Au coated Si substrates using one-step facile thermal evaporation route and their field emission investigations. The as-synthesized In2Se3 micro-crystals were subjected to structural and morphological analysis prior to the field emission studies. The XRD spectrum of the as-synthesized product reveals formation of crystalline hexagonal phase of In2Se3 under the prevailing experimental conditions. Under optimized process variables, the morphology of the as-synthesized product is characterized by presence of well facetted micron size particles of In2Se3. Furthermore, the EDAX analysis confirms the presence of In and Se in the as-synthesized sample. The field emission characteristic of the In2Se3 micro-crystal emitter is found to be superior to the other metal chalcogenides micro-crystal based emitters. The synthesized In2Se3 micro-crystals emitter delivers current density of ~ 225 μA/cm2 at an applied electric field of ~ 7.44 V/μm. The emission current stability investigated at pre-set value of ~3 μA is observed to be fairly good. These observed results demonstrate potential of the In2Se3 cathode as an electron source for practical applications in vacuum microelectronic devices. [ABSTRACT FROM AUTHOR]

Published
2015
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41. Photo-Enhanced Field Emission Characteristics of SnS2 Nanosheets.

Author

Suryawanshi, Sachin R., Warule, Sambhaji S., Chaudhari, Nilima S., Ogale, Satishchandra B., and More, Mahendra A.

Subjects
*NANOSTRUCTURED materials synthesis, *FIELD emission, *TIN compounds, *X-ray diffraction, *PHASE transitions
Abstract

In the present studies, we demonstrate a facile hydrothermal route to synthesize elegant SnS2 nanosheets. The x-ray diffraction pattern clearly revealed formation of SnS2 phase under the hydrothermal conditions. SEM and TEM analysis indicated formation of very thin SnS2 nanosheets. Field electron emission studies of the SnS2 nanosheets emitter were preformed at base pressure of 1x10-8 mbar. The value of turn-on field, corresponding to an emission current density of ~1 μA/ cm2, was found to be ~ 4.6 V/μm. Interestingly, when the cathode was illuminated with visible light, it exhibited lower turn-on field of ~ 4.2 V/μm, along with nearly 2.5 times enhancement in the emission current. Furthermore, the photo-enhanced emission characteristic shows a reproducible switching behavior. The photo-enhanced filed emission characteristics along with reproducible switching behaviour propose the SnS2 nanosheets emitter as a promising candidate for nano-optoelectronic devices. [ABSTRACT FROM AUTHOR]

Published
2014
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