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Your search keyword '"Svechnikov, M. V."' showing total 34 results
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34 results on '"Svechnikov, M. V."'

21. Manufacturing and research of mirrors with a wide bandwidth for synchrotron applications

Author

null Chkhalo N. I., null Chernov V. A., null Sorokoletov D. S., null Svechnikov M. V., null Svetokhin S. S, null Salashchenko N. N., null Rakshun Ya. V., null Polkovnikov V. N., null Pleshkov R. S., null Pestov A. E., null Pershin D. D., null Kriventsov V. V., null Zorina M. V., null Dar'in F. A., null Garakhin S. A., and null Akhsakhalyan A. A.

Abstract

The work is devoted to the development, fabrication and analysis of broadband W / Si multilayer mirrors for a broadband monochromator, calculated for the spectral range of 7-10 keV. The possibility of using the stacking approach to obtain multilayer mirrors with a reflection coefficient of about 30% and a spectral bandwidth Delta E/E of about 20% is shown. The results of measurements of the angular and spectral reflection curves of the mirror obtained on a laboratory diffractometer and on a synchrotron in Novosibirsk are presented. Keywords: hard X-ray range, monochromator, synchrotron radiation, broadband mirrors, stack structures, multilayer X-ray mirrors.

Published
2022

22. High-resolution laboratory reflectometer for the study of x-ray optical elements in the soft and extreme ultraviolet wavelength ranges

Author

Garakhin, S. A., primary, Chkhalo, N. I., additional, Kas’kov, I. A., additional, Lopatin, A. Ya., additional, Malyshev, I. V., additional, Nechay, A. N., additional, Pestov, A. E., additional, Polkovnikov, V. N., additional, Salashchenko, N. N., additional, Svechnikov, M. V., additional, Tsybin, N. N., additional, Zabrodin, I. G., additional, and Zuev, S. Yu., additional

Published
2020
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25. Mo/Si Multilayer Mirrors with B4C and Be Barrier Layers

Author

Zuyev, S. Yu., primary, Pariev, D. E., additional, Pleshkov, R. S., additional, Polkovnikov, V. N., additional, Salashchenko, N. N., additional, Svechnikov, M. V., additional, Sertsu, M. G., additional, Sokolov, A., additional, Chkhalo, N. I., additional, and Schäfers, F., additional

Published
2019
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26. Influence of barrier interlayers on the performance of Mo/Be multilayer mirrors for next-generation EUV lithography

Author

Svechnikov, M. V., primary, Chkhalo, N. I., additional, Gusev, S. A., additional, Nechay, A. N., additional, Pariev, D. E., additional, Pestov, A. E., additional, Polkovnikov, V. N., additional, Tatarskiy, D. A., additional, Salashchenko, N. N., additional, Schäfers, F., additional, Sertsu, M. G., additional, Sokolov, A., additional, Vainer, Y. A., additional, and Zorina, M. V., additional

Published
2018
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27. Deep X-Ray Reflectometry of Supermultiperiod A3B5 Structures with Quantum Wells Grown by Molecular-Beam Epitaxy.

Author

Goray, L. I., Pirogov, E. V., Sobolev, M. S., Polyakov, N. K., Dashkov, A. S., Svechnikov, M. V., and Bouravleuv, A. D.

Subjects
X-ray reflectometry, SYNCHROTRON radiation sources, EPITAXY, DOPED semiconductor superlattices, QUANTUM wells, MOLECULAR beam epitaxy, STANDARD deviations
Abstract

Elastically strained supermultiperiod (100–1000 periods) AlGaAs/GaAs superlattices with different doping levels and slightly differing period thicknesses have been investigated. The proposed technique of characterization consisting of combined application of deep X-ray reflectometry based on a rigorous calculation method, as well as the well-known method of high-resolution X-ray reflectometry, has made it possible to investigate 100-period structures with 2-nm-wide Al0.3Ga0.7As barriers and 10-nm-wide GaAs wells and determine with a high accuracy the layer thicknesses and spread of interfaces. This achievement can be considered as a first step in further analysis of thick structures using bright synchrotron radiation source. The difference between the expected and obtained by the proposed method layer thicknesses is several percent, including that for samples with a high doping level (up to 1018 cm–3). All supermultiperiod structures are characterized by sharp interfaces with a standard deviation of about 0.1 nm. Based on the obtained data on the thicknesses, one can accurately determine the layer compositions using high-resolution X-ray diffraction. [ABSTRACT FROM AUTHOR]

Published
2020
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28. Study of oxidation processes in Mo/Be multilayers

Author

Nechay, A. N., primary, Chkhalo, N. I., additional, Drozdov, M. N., additional, Garakhin, S. A., additional, Pariev, D. E., additional, Polkovnikov, V. N., additional, Salashchenko, N. N., additional, Svechnikov, M. V., additional, Vainer, Yu. A., additional, Meltchakov, E., additional, and Delmotte, F., additional

Published
2018
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30. Mo/Si Multilayer Mirrors with B4C and Be Barrier Layers.

Author

Zuyev, S. Yu., Pariev, D. E., Pleshkov, R. S., Polkovnikov, V. N., Salashchenko, N. N., Svechnikov, M. V., Sertsu, M. G., Sokolov, A., Chkhalo, N. I., and Schäfers, F.

Abstract

Conventional Mo/Si mirrors and mirrors with B4C and Be barrier layers, designed for reflection at wavelengths around 13.5 nm, are fabricated using magnetron sputtering and studied. Their reflectance is measured at different grazing angles and at different wavelengths. Four-component multilayer mirrors of the Mo/Be/Si/B4C type are shown to surpass, in terms of the reflection coefficient, their Mo/Si and Mo/Si/B4C counterparts by 2 and 1%, respectively, at wavelengths of incident radiation of 12.4, 12.7, 13.0, and 13.5 nm. [ABSTRACT FROM AUTHOR]

Published
2019
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