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The selective emitter formation by laser doping is a well known process to increase the efficiency of silicon solar cells [1] , [2] . For the characterization of laser doped emitters, SIMS (Secondary Ion Mass Spectroscopy) and ECV (Electrochemical Capacitance Voltage Measurement) techniques are used to analyze the emitter profile [3] . It is very difficult to get acceptable result by SIMS on a textured surface, so only ECV can be used. It has been shown, that a charge carrier depth profile can be measured on a homogeneous emitter only by ECV. The use of laser doping results in a non-homogeneous emitter. We have shown that the emitter depth is not just a function of the pulse power, but in addition of the surface structure of the wafer. The texture seems responsible for a strong variability in the doping profile. It has been shown, that the ECV measurement is not applicable to characterize the emitter depth on laser doped areas, because of the microscopic inhomogeneities in the emitter on the macroscopic measurement area. The real emitter profiles are to complex to be characterized by SIMS or ECV. We have shown that the variation in the emitter profile is resulting from the texture in the laser-doped regions.

The effective nonlinear coefficient and temperature acceptance bandwidth of three Lu and Sc co-doped GdCa(4)O(BO(3))(3) type nonlinear crystals were measured. NCPM for SHG in to the blue-UV spectral region can be obtained by controlling the co-dopant concentration. Measurements were based on intra-cavity SHG of a CW Ti:Sapphire laser, and the effective nonlinear coefficients were found to be in the range of 0.5 to 0.6 pm/V for the three crystals used. The FWHM temperature acceptance bandwidth was measured to be more than 35 degrees C using a 6 mm long Gd(0.871)Lu(0.129)Ca(4)O(BO(3))(3) crystal. A maximum of 115 mW at 407.3 nm in a single direction was measured using a 6.5 mm long Gd0.96Sc0.04Ca(4)O(BO(3))(3) crystal.