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Abstract We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As $$_x$$ x P $$_{1-x}$$ 1 - x ) gate barrier layer. The operation of the GC-FET detectors is associated with the carrier heating in the GC by the THz electric field resonantly excited by incoming radiation leading to an increase in the rectified current between the channel and the gate over the b-As $$_x$$ x P $$_{1-x}$$ 1 - x energy barrier layer (BLs). The specific feature of the GC-FETs under consideration is relatively low energy BLs and the possibility to optimize the device characteristics by choosing the barriers containing a necessary number of the b-As $$_x$$ x P $$_{1-x}$$ 1 - x atomic layers and a proper gate voltage. The excitation of the plasma oscillations in the GC-FETs leads to the resonant reinforcement of the carrier heating and the enhancement of the detector responsivity. The room temperature responsivity can exceed the values of $$10^3$$ 10 3 A/W. The speed of the GC-FET detector’s response to the modulated THz radiation is determined by the processes of carrier heating. As shown, the modulation frequency can be in the range of several GHz at room temperatures.

We investigate the response of the micromechanical field-effect transistors (MMFETs) to the impinging terahertz (THz) signals. The MMFET uses the microcantilevers (MC) as a mechanically floating gate and the movable mirror of the Michelson optical interferometer. The MC mechanical oscillations are transformed into optical signals and the MMFET operates as the detector of THz radiation with the optical output. The combination of the mechanical and plasmonic resonances in the MMFET with the optical amplification enables an effective THz detection.

An asymmetric dual-grating gate bilayer graphene-based field effect transistor (ADGG-GFET) with an integrated bowtie antenna was fabricated and its response as a Terahertz (THz) detector was experimentally investigated. The device was cooled down to 4.5 K, and excited at different frequencies (0.15, 0.3 and 0.6 THz) using a THz solid-state source. The integration of the bowtie antenna allowed to obtain a substantial increase in the photocurrent response (up to 8 nA) of the device at the three studied frequencies as compared to similar transistors lacking the integrated antenna (1 nA). The photocurrent increase was observed for all the studied values of the bias voltage applied to both the top and back gates. Besides the action of the antenna that helps the coupling of THz radiation to the transistor channel, the observed enhancement by nearly one order of magnitude of the photoresponse is also related to the modulation of the hole and electron concentration profiles inside the transistor channel by the bias voltages imposed to the top and back gates. The creation of local n and p regions leads to the formation of homojuctions (np, pn or pp+) along the channel that strongly affects the overall photoresponse of the detector. Additionally, the bias of both back and top gates could induce an opening of the gap of the bilayer graphene channel that would also contribute to the photocurrent.

A graphene-based field-effect-transistor with asymmetric dual-grating gates was fabricated and characterized under excitation of terahertz radiation at two frequencies: 0.15 THz and 0.3 THz. The graphene sheet was encapsulated between two flakes of h-BN and placed on a highly doped SiO2/Si substrate. An asymmetric dual-grating gate was implemented on the h-BN top flake. Even though no antenna was used to couple the incoming radiation, a clear gate-bias-dependent photocurrent was measured under excitation at 0.3 THz up to room temperature. We subsequently demonstrated that the device can be used for terahertz sensing and inspection of hidden metallic objects at room temperature.

We report on the design, optimization and fabrication of a plasmon-assisted terahertz (THz) photoconductive antenna (PCA) for THz pulse generation at low-power optical pumps. The PCA features a high aspect ratio dielectric-embedded plasmonic Au grating placed into the photoconductive gap. Additionally, Si3N4-passivation of the photoconductor and the Al2O3-antireflection coating are used to further enhance antenna performance. For comparative analysis of the THz photocurrents, THz waveforms and THz power spectra we introduced the THz photocurrent δi and the THz power enhancement δTHz factors, which are defined as ratios between the THz photocurrents and the THz power spectra for the plasmon-assisted and conventional PCAs. We demonstrated superior performance of the plasmon-assisted PCA δi=30 and δTHz=3 ⋅ 103 at the lowest optical pump power of P=0.1 mW. Nevertheless the increase to P=10 mW lead to monotonically decrease in the both values to δi=2 and δTHz=102 due to screening effects. These results demonstrate a strong potential of the plasmonic PCA for operation with low-power lasers, thus, opening opportunities for the development of portable and cost-effective THz spectrometers and imaging systems.