1. Grown-in defects in silicon crystals
- Author
-
Kozo Nakamura, J. Tomioka, and T. Saishoji
- Subjects
Void (astronomy) ,Materials science ,Silicon ,Analytical chemistry ,chemistry.chemical_element ,Condensed Matter Physics ,Crystallographic defect ,Inorganic Chemistry ,Oxygen precipitation ,Crystallography ,Temperature gradient ,Cooling rate ,chemistry ,Vacancy defect ,Materials Chemistry ,Growth rate - Abstract
We have investigated the formation behavior of grown-in defects in silicon crystals. The void defects are formed by the aggregation of the super-saturated vacancies during the growth process and the V/G parameter (V, growth rate; G, axial temperature gradient at the crystal–melt interface) controls the vacancy concentration. We investigated how the void defects were influenced by V/G and the cooling rate. The density of void defects (Nv) is proportional to the cooling rate (Cr) to the power of 1.5; that is, N v =β C r 1.5 . This relation holds up to a cooling rate of 40 K/min. On the other hand, the coefficient β increases with a decrease in V/G. The relation of N v =β C r 1.5 does not hold for cooling rates >40 K/min, and oxygen precipitation increases instead of void formation. This behavior supports the void formation model of Voronkov. We also discuss this phenomenon in this paper.
- Published
- 2002
- Full Text
- View/download PDF