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Topological insulators (TIs) like Bi2Se3 are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport. In this work, we achieved the epitaxial growth of Bi2Se3 thin films on germanium, which is a key material for microelectronics. Germanium also exhibits interesting properties with respect to the electron spin such as a spin diffusion length of several micrometers at room temperature. By growing Bi2Se3 on germanium, we aim at combining the long spin diffusion length of Ge with the spin-momentum locking at the surface of Bi2Se3. We first performed a thorough structural analysis of Bi2Se3 films using electron and x-ray diffraction as well as atomic force microscopy. Then, magnetotransport measurements at low temperature showed the signature of weak antilocalization as a result of two-dimensional transport in the presence of spin-orbit coupling. We interpret our results as the signature of magnetotransport in a single strongly coupled coherent channel in the presence of surface to bulk scattering. Interestingly, the magnetotransport measurements also point out that the conduction channel can be tuned between the Bi2Se3 film and the Ge layer underneath by means of the bias voltage or the applied magnetic field. This result suggests that the Bi2Se3/Ge junction is a promising candidate for tuning spin-related phenomena at interfaces between TIs and semiconductors.

We report continuous wave and time resolved photoluminescence studies of self-assembled InP quantum dots grown by metalorganic chemical vapor deposition. The quantum dots are embedded into indirect band-gap In0.5Al0.5P layers or In0.5Al0.3Ga0.2P layers with a conduction band line-up close to the direct-to-indirect crossover. As revealed by photoluminescence spectra, efficient interdiffusion of species from the barrier layers produces (Al,In)P or (Al,Ga,In)P-dots. This interdiffusion creates potential barriers that are repulsive for electrons of X valleys around the QDs. Both samples show a fast exponential decay component with a time constant between 0.5 and 0.7?ns. In addition, the sample with indirect band gap matrix shows a slow non-exponential time-decay, which is still visible after more than 100??s. The fast component is attributed to direct recombination of electron-hole pairs in the dots whilst the slow component, which follows a power law t-0.75results from recombination of holes in the dots and electrons in metastable states around the dots. [ABSTRACT FROM AUTHOR]

In this work we present the coherent control of polariton parametric scattering with weak phase locked probe pulses. It is demonstrated that the signal emission arising from the parametric scattering is completely coherent for moderate excitation power, whereas at high pump density the dynamics appears less coherent due to the depletion of the pump polariton reservoir. It is furthermore demonstrated that the phase of the probe pulses controls the emission from signal, pump, and idler at the same time. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Topological insulators (TIs) hold promise for manipulating the magnetization of a ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, integrating TIs with conventional FMs often leads to significant device-to-device variations and a broad distribution of SOT magnitudes. In this work, we present a scalable approach to grow a full van der Waals FM/TI heterostructure by molecular beam epitaxy, combining the charge-compensated TI (Bi,Sb) 2 Te 3 with 2D FM Fe 3 GeTe 2 (FGT). Harmonic magnetotransport measurements reveal that the SOT efficiency exhibits a non-monotonic temperature dependence and experiences a substantial enhancement with a reduction of the FGT thickness to 2 monolayers. Our study further demonstrates that the magnetization of ultrathin FGT films can be switched with a current density of J c ∼ 10 10 A/m 2 , with minimal device-to-device variations compared to previous investigations involving traditional FMs.

Optical detection techniques are among the most powerful methods used to characterize spintronic phenomena. The spin orientation can affect the light polarization, which, by the reciprocal mechanism, can modify the spin density. Numerous recent experiments, report local changes in the spin density induced by a circularly polarized focused laser beam. These effects are typically probed electrically, by detecting the variations of the photoresistance or photocurrent associated to the reversal of the light helicity. Here we show that in general, when the light helicity is modified, the beam profile is slightly altered, and the barycenter of the laser spot is displaced. Consequently, the temperature gradients produced by the laser heating will be modulated, producing thermo-electric signals that alternate in phase with the light polarization. These unintended signals, having no connection with the electron spin, appear under the same experimental conditions and can be easily misinterpreted. We show how this contribution can be experimentally assessed and removed from the measured data. We find that even when the beam profile is optimized, this effect is large, and completely overshadows the spin related signals in all the materials and experimental conditions that we have tested., (© 2022. The Author(s).)

Spin-orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins and have led to several newly discovered effects, from spin-charge interconversion and spin-orbit torques to novel magnetoresistance phenomena. In particular, a puzzling magnetoresistance has been evidenced as bilinear in electric and magnetic fields. Here, we report the observation of bilinear magnetoresistance (BMR) in strained HgTe, a prototypical TI. We show that both the amplitude and sign of this BMR can be tuned by controlling with an electric gate the relative proportions of the opposite contributions of opposite surfaces. At magnetic fields of 1 T, the magnetoresistance is of the order of 1% and has a larger figure of merit than previously measured TIs. We propose a theoretical model giving a quantitative account of our experimental data. This phenomenon, unique to TI, offers novel opportunities to tune their electrical response for spintronics.

Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride-on-silicon platform with gallium nitride (GaN) as the main waveguide layer. The photonic circuits consist of a microdisk and a pulley waveguide, terminated by out-coupling gratings. In this Letter, we measure quality factors up to 3500 under continuous-wave excitation. Lasing is observed from 374 to 399 nm under pulsed excitation, achieving low-threshold energies of 0.14 m J / c m 2 per pulse (threshold peak powers of 35 k W / c m 2 ). A large peak-to-background dynamic of around 200 is observed at the out-coupling grating for small gaps of 50 nm between the disk and the waveguide. These devices operate at the limit of what can be achieved with GaN in terms of operation wavelength.

Relating magnetotransport properties to specific spin textures at surfaces or interfaces is an intense field of research nowadays. Here, we investigate the variation of the electrical resistance of Ge(111) grown epitaxially on semi-insulating Si(111) under the application of an external magnetic field. We find a magnetoresistance term that is linear in current density j and magnetic field B, hence, odd in j and B, corresponding to a unidirectional magnetoresistance. At 15 K, for I=10  μA (or j=0.33  A m^{-1}) and B=1  T, it represents 0.5% of the zero field resistance, a much higher value compared to previous reports on unidirectional magnetoresistance (UMR). We ascribe the origin of this magnetoresistance to the interplay between the externally applied magnetic field and the pseudomagnetic field generated by the current applied in the spin-splitted subsurface states of Ge(111). This unidirectional magnetoresistance is independent of the current direction with respect to the Ge crystal axes. It progressively vanishes, either using a negative gate voltage due to carrier activation into the bulk (without spin-splitted bands), or by increasing the temperature due to the Rashba energy splitting of the subsurface states lower than ∼58k_{B}. We believe that UMR could be used as a powerful probe of the spin-orbit interaction in a wide range of materials.

The Hall effect can be extended by inducing a temperature gradient in lieu of electric field that is known as the Nernst (-Ettingshausen) effect. The recently discovered spin Nernst effect in heavy metals continues to enrich the picture of Nernst effect-related phenomena. However, the collection would not be complete without mentioning the valley degree of freedom benchmarked by the valley Hall effect. Here we show the experimental evidence of its missing counterpart, the valley Nernst effect. Using millimeter-sized WSe[Formula: see text] mono-multi-layers and the ferromagnetic resonance-spin pumping technique, we are able to apply a temperature gradient by off-centering the sample in the radio frequency cavity and address a single valley through spin-valley coupling. The combination of a temperature gradient and the valley polarization leads to the valley Nernst effect in WSe[Formula: see text] that we detect electrically at room temperature. The valley Nernst coefficient is in good agreement with the predicted value.

On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in the blue spectral range based on microdisks and bus waveguides in III-nitride on silicon. We report on the interplay between microdisk-waveguide coupling and its optical properties. We observe critical coupling and phase matching, i.e. the most efficient energy transfer scheme, for very short gap sizes and thin waveguides (g = 45 nm and w = 170 nm) in the spontaneous emission regime. Whispering gallery mode lasing is demonstrated for a wide range of parameters with a strong dependence of the threshold on the loaded quality factor. We show the dependence and high sensitivity of the output signal on the coupling. Lastly, we observe the impact of processing on the tuning of mode resonances due to the very short coupling distances. Such small footprint on-chip integrated microlasers providing maximum energy transfer into a photonic circuit have important potential applications for visible-light communication and lab-on-chip bio-sensors.

Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane confinement and cooling of these excitons, when trapped in the electrostatic potential created by semitransparent electrodes of various shapes deposited on the sample surface. This result is a prerequisite for the electrical control of the exciton densities and fluxes, as well for studies of the complex phase diagram of these dipolar bosons at low temperature.

Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silicon mushroom-type microrings that is compatible with integrated nanophotonic circuits with the goal of achieving electrically injected lasing. Using a central buried n-contact to bypass the insulating buffer layers, we are able to underetch the microring, which is essential for maintaining vertical confinement in a thin disk. We demonstrate direct current room-temperature electroluminescence with 440 mW/cm 2 output power density at 20 mA from such microrings with diameters of 30 to 50 μm. The first steps towards achieving an integrated photonic circuit are demonstrated.

There is an urgent need for rapid, accurate detection and classification of carbapenemases. The current study evaluated the automated BD Phoenix CPO Detect and the manual bioMérieux Rapidec Carba NP tests for meeting these needs. Both tests were challenged with 294 isolates of Enterobacteriaceae spp., Pseudomonas aeruginosa , and Acinetobacter baumannii chosen to provide extreme diagnostic difficulty. Carbapenemases such as KPC, NMC-A, IMI, SME, NDM, SPM, IMP, VIM, and OXA-23, 40, 48, 58, 72, 181, and 232 were produced by 243 isolates and 51 carbapenemase-negative isolates included porin mutants and producers of extended-spectrum β-lactamases (ESBLs), AmpCs, K1, and broad-spectrum β-lactamases. Both tests exhibited high sensitivity of carbapenemase detection (>97%). Due to the highly challenging carbapenemase-negative isolates, specificities were lower than typical for evaluations involving mostly routine clinical isolates. BD Phoenix CPO Detect was 68.6% specific and Rapidec Carba NP was 60.8% to 78.4% specific, depending on how borderline results were interpreted. Only BD Phoenix CPO Detect classified carbapenemases. It correctly classified 85.0% of class A, 72.4% of class B, and 88.6% of class D carbapenemases. Importantly with respect to empirical therapy with new β-lactamase inhibitor combinations such as ceftazidime/avibactam, no class B carbapenemases were misclassified as class A carbapenemases. Both tests offer advantages. Used alone, without initial susceptibility tests, Rapidec Carba NP can provide positive results for some isolates after only 10 to 30 min incubation. BD Phoenix CPO Detect provides novel advantages such as automated carbapenemase detection, inclusion in susceptibility panels to eliminate delays and subjectivity in initiating carbapenemase tests, and classification of most carbapenemases., (Copyright © 2017 Thomson et al.)

The spontaneous emergence of vector vortex beams with nonuniform polarization distribution is reported in a vertical-cavity surface-emitting laser (VCSEL) with frequency-selective feedback. Antivortices with a hyperbolic polarization structure and radially polarized vortices are demonstrated. They exist close to and partially coexist with vortices with uniform and nonuniform polarization distributions characterized by four domains of pairwise orthogonal polarization. The spontaneous formation of these nontrivial structures in a simple, nearly isotropic VCSEL system is remarkable and the vector vortices are argued to have solitonlike properties.

We present a numerical approach for the solution of the dissipative Gross-Pitaevskii equation coupled to the reservoir equation governing the exciton-polaritons Bose-Einstein condensation. It is based on the finite difference method applied to space variables and on the fourth order Range-Kutta algorithm applied to the time variable. Numerical tests illustrate the stability and accuracy of the proposed scheme. Then results on the behavior of the condensate under large Gaussian pumping and around the threshold are presented. We determine the threshold through the particular behavior of the self-energy and characterize it by tracking the establishment time of the steady state.

We demonstrate phase-matched second harmonic generation in gallium nitride on silicon microdisks. The microdisks are integrated with side-coupling bus waveguides in a two-dimensional photonic circuit. The second harmonic generation is excited with a continuous wave laser in the telecom band. By fabricating a series of microdisks with diameters varying by steps of 8 nm, we obtain a tuning of the whispering gallery mode resonances for the fundamental and harmonic waves. Phase matching is obtained when both resonances are matched with modes satisfying the conservation of orbital momentum, which leads to a pronounced enhancement of frequency conversion.

We have developed a nanophotonic platform with microdisks using epitaxial III-nitride materials on silicon. The two-dimensional platform consists of suspended waveguides and mushroom-type microdisks as resonators side-coupled with a bus waveguide. Loaded quality factors up to 80000 have been obtained in the near-infrared spectral range for microdisk diameters between 8 and 15 μm. We analyze the dependence of the quality factors as a function of coupling efficiency. We have performed continuous-wave second harmonic generation experiments in resonance with the whispering gallery modes supported by the microdisks.

Deep ultra-violet semiconductor lasers have numerous applications for optical storage and biochemistry. Many strategies based on nitride heterostructures and adapted substrates have been investigated to develop efficient active layers in this spectral range, starting with AlGaN quantum wells on AlN substrates and more recently sapphire and SiC substrates. Here we report an efficient and simple solution relying on binary GaN/AlN quantum wells grown on a thin AlN buffer layer on a silicon substrate. This active region is embedded in microdisk photonic resonators of high quality factors and allows the demonstration of a deep ultra-violet microlaser operating at 275 nm at room temperature under optical pumping, with a spontaneous emission coupling factor β = (4 ± 2) 10(-4). The ability of the active layer to be released from the silicon substrate and to be grown on silicon-on-insulator substrates opens the way to future developments of nitride nanophotonic platforms on silicon.

We report on spatially- and time-resolved emission measurements and observation of transport of indirect excitons in ZnO/MgZnO wide single quantum wells.

The spatial distribution of photon modes confined in a 0D cavity and a 1D W1 waveguide is investigated on AlN-based photonic crystal (PC) membranes by spectrally resolved scanning confocal microscopy in the ultra-violet spectral range. The influence of the fabrication-induced disorder of the PC on the photon modes is analyzed. The cavity modes are shown to be robust with respect to disorder, whereas the 1D modes of the W1 waveguide are localized near its cut-off frequency. Those modifications of the lowest energy photonic modes are compared to simulations of weakly disordered photonic structures.

We report exciton-polariton condensation in a new family of fully hybrid ZnO-based microcavity demonstrating the best-quality ZnO material available (a bulk substrate), a large quality factor (~4000) and large Rabi splittings (~240 meV). Condensation is achieved between 4 and 300 K and for excitonic fractions ranging between 17% and 96%, which corresponds to a tuning of the exciton-polariton mass, lifetime, and interaction constant by 1 order of magnitude. We demonstrate mode switching between polariton branches allowing, just by controlling the pumping power, to tune the photonic fraction by a factor of 4.

We compare the quality factor values of the whispering gallery modes of microdisks (μ-disks) incorporating GaN quantum dots (QDs) grown on AlN and AlGaN barriers by performing room temperature photoluminescence (PL) spectroscopy. The PL measurements show a large number of high Q factor resonant modes on the whole spectrum, which allows us to identify the different radial mode families and to compare them with simulations. We report a considerable improvement of the Q factor, which reflects the etching quality and the relatively low cavity loss by inserting QDs into the cavity. GaN/AlN QDs-based μ-disks show very high Q values (Q>7000) whereas the Q factor is only up to 2000 in μ-disks embedding QDs grown on the AlGaN barrier layer. We attribute this difference to the lower absorption below bandgap for AlN barrier layers at the energies of our experimental investigation.

Objectives: Few epidemiological studies have focused on the psychological health of high level athletes. This study aimed to identify the principal psychological problems encountered within French high level athletes, and the variations in their prevalence based on sex and the sport practiced., Methods: Multivariate analyses were conducted on nationwide data obtained from the athletes' yearly psychological evaluations., Results: A representative sample of 13% of the French athlete population was obtained. 17% of athletes have at least one ongoing or recent disorder, generalized anxiety disorder (GAD) being the most prevalent (6%), followed by non-specific eating disorders (4.2%). Overall, 20.2% of women had at least one psychopathology, against 15.1% in men. This female predominance applied to anxiety and eating disorders, depression, sleep problems and self-harming behaviors. The highest rates of GAD appeared in aesthetic sports (16.7% vs. 6.8% in other sports for men and 38.9% vs. 10.3% for women); the lowest prevalence was found in high risk sports athletes (3.0% vs. 3.5%). Eating disorders are most common among women in racing sports (14% vs. 9%), but for men were found mostly in combat sports (7% vs. 4.8%)., Discussion: This study highlights important differences in psychopathology between male and female athletes, demonstrating that the many sex-based differences reported in the general population apply to elite athletes. While the prevalence of psychological problems is no higher than in the general population, the variations in psychopathology in different sports suggest that specific constraints could influence the development of some disorders.

In a pump-probe experiment, we have been able to control, with phase-locked probe pulses, the ultrafast nonlinear optical emission of a semiconductor microcavity, arising from polariton parametric amplification. This evidences the coherence of the polariton population near k=0, even for delays much longer than the pulse width. The control of a large population at k=0 is possible although the probe pulses are much weaker than the large polarization they control. With rising pump power the dynamics of the scattering get faster. Just above threshold the parametric scattering process shows unexpected long coherence times, whereas when pump power is risen the contrast decays due to a significant pump reservoir depletion. The weak pulses at normal incidence control the whole angular emission pattern of the microcavity.

The excitonic luminescence of a highly ordered single conjugated polymer chain is studied by microphotoluminescence. At T< or =10 K it consists of a single Lorentzian line. The linewidth increases linearly with T between 6 and 60 K, from 350 microeV at 6 K, indicating a pure dephasing time of approximately 2 ps. Above 10 K, other neighboring regions along the chain direction start to emit at a slightly higher (by approximately 1 meV) energy. This indicates very small inhomogeneous broadening, very long chains ( > or =10 microm), and a long range and very rapid exciton energy transfer ( >10 microm in <100 ps).