1. Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth
- Author
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D. Dobrovolskas, Tadas Malinauskas, Arūnas Kadys, Gintautas Tamulaitis, J. Mickevičius, T. Steponavičius, and Marek Kolenda
- Subjects
010302 applied physics ,Materials science ,Photoluminescence ,business.industry ,General Physics and Astronomy ,02 engineering and technology ,Surfaces and Interfaces ,General Chemistry ,Chemical vapor deposition ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Surfaces, Coatings and Films ,chemistry.chemical_compound ,chemistry ,0103 physical sciences ,Sapphire ,Optoelectronics ,Metalorganic vapour phase epitaxy ,Thin film ,Trimethylindium ,0210 nano-technology ,business ,Luminescence ,Deposition (law) - Abstract
Capabilities of repeated deposition of ultrathin layers by pulsed metalorganic chemical vapor deposition (MOCVD) for improvement of structural and luminescence properties of InN thin films on GaN/sapphire templates were studied by varying the growth temperature and the durations of pulse and pause in the delivery of In precursor. X-ray diffraction, atomic force microscopy, and spatially-resolved photoluminescence (PL) spectroscopy were exploited to characterize the structural quality, surface morphology and luminescence properties. Better structural quality is achieved by using longer trimethylindium pulses. However, it is shown that the luminescence properties of InN epilayers correlate with the pause and pulse ratio rather than with their absolute lengths, and the deposition of 1.5–2 monolayers of InN during one growth cycle is optimal to achieve the highest PL intensity. Moreover, the use of temperature ramping enabled achieving the highest PL intensity and the smallest blue shift of the PL band. The luminescence parameters are linked with the structural properties, and domain-like patterns of InN layers are revealed.
- Published
- 2018
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