296 results on '"Takagi, Shin-ichi"'
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2. Planar defect formation mechanism in Ge-rich SiGe-on-insulator substrates during Ge condensation process
3. Characterization of anisotropic relaxation rate of SGOI (110) substrates
4. Ion implanted impurity profiles in Ge substrates and amorphous layer thickness formed by ion implantation
5. Device design and electron transport properties of uniaxially strained-SOI tri-gate nMOSFETs
6. Device design of high-speed source-heterojunction-MOS transistors (SHOTs): optimization of source band offset and graded heterojunction
7. Hole-mobility enhancement in Ge-rich strained SiGe-on-insulator pMOSFETs at high temperatures
8. High-speed source-heterojunction-MOS-transistor (SHOT) utilizing high-velocity electron injection
9. Control of threshold-voltage and short-channel effects in ultrathin strained-SOI CMOS devices
10. On the origin of increase in substrate current and impact ionization efficiency in strained-Si n- and p-MOSFETs
11. (110)-Surface strained-SOI CMOS devices
12. Thin-film strained-SOI CMOS devices-physical mechanisms for reduction of carrier mobility
13. Scaling effects on gate leakage current
14. Ultrathin body SiGe-on-insulator pMOSFETs with high-mobility SiGe surface channels
15. High-performance strained-SOI CMOS devices using thin film Si-Ge-on-insulator technology
16. Characterization of platinum germanide/Ge(100) Schottky barrier height for Ge channel Metal Source/Drain MOSFET
17. Strain relaxation processes in strained-Si layer on SiGe-on-insulator substrates
18. Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process
19. Influences of buried-oxide interface on inversion-layer mobility in ultra-thin SOI MOSFETs
20. Novel SOI p-channel MOSFETs with higher strain in Si channel using double SiGe heterostructures
21. Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film
22. Effects of incomplete ionization of impurities in poly-Si gate and band gap narrowing on direct tunneling gate leakage current
23. Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology
24. SiGe source/drain structure for the suppression of the short-channel effect of sub-0.1-m p-channel MOSFETs
25. Impact of electron and hole inversion-layer capacitance on low voltage operation of scaled n- and p-MOSFET's
26. Ge Condensation Technologies for Advanced MOSFETs on SGOI and GOI Substrates
27. Study of the Surface Cleaning of GOI and SGOI Substrates for Ge Epitaxial Growth
28. Performance of Germanium Metal-Insulator-Semiconductor Field Effect Transistors with Nickel Germanide Source/Drain
29. Characterization of inversion-layer capacitance of holes in Si MOSFET's
30. A new I-V model for stress-induced leakage current including inelastic tunneling
31. Experimental evidence of inelastic tunneling in stress-induced leakage current
32. Sub-band structure engineering for advanced CMOS channels
33. Evaluation of the valence band discontinuity of Si/Si sub 1-xGe sub x/Si heterostructures by application of admittance spectroscopy to MOS capacitors
34. Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal-oxide-semiconductor field-effect transistors
35. Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation
36. Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS
37. Quantitative understanding of inversion-layer capacitance in Si MOSFET's
38. Effects of surface orientation
39. On the universality of inversion layer mobility in Si MOSFET's: part I-effects of substrate impurity concentration
40. Device simulation of surface quantization effect on MOSFETs with simplified density-gradient method
41. SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge-Condensation Technique for High-Mobility Channel CMOS Devices
42. Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation
43. Structure and Characteristics of Strained-Si-On-Insulator (Strained-SOI) MOSFETs
44. Carrier transport properties of thin gate oxides after soft and hard breakdown
45. Experimental evidence of valence band deformation due to strain in inverted hole channel of strained-Si pMOSFETs
46. Modeling of screening effect on remote Coulomb scattering due to gate impurities by nonuniform free carriers in poly-Si gate.
47. Experimental study on electron mobility in ultrathin-body silicon-on-insulator metal-oxide-semiconductor field-effect transistors.
48. Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C–V Measurement
49. Preparation of Diamond-Like Carbon on Ti Film with Tetramethylsilane Buffer Layer
50. Near-surface nanocomposite structure on commercial purity aluminum induced by fine particle bombardment
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