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A numbering $f$ of a graph $G$ of order $n$ is a labeling that assigns distinct elements of the set $\left\{ 1,2,\ldots ,n\right\} $ to the vertices of $G$, where each $uv\in E\left( G\right) $ is labeled $f\left( u\right) +f\left( v\right) $. The strength $\mathrm{str}\left( G\right) $ of $G$ is defined by $\mathrm{str}\left( G\right) =\min \left\{ \mathrm{str}_{f}\left( G\right) \left\vert f\text{ is a numbering of }G\right. \right\}$, where $\mathrm{str}_{f}\left( G\right) =\max \left\{ f\left( u\right) +f\left( v\right) \left\vert uv\in E\left( G\right) \right. \right\} $. Let $f\left( n\right) $ denote the maximum of $\mathrm{str}\left( G\right) +% \mathrm{str}\left( \overline{G}\right) $ over nonempty graphs $G$ and $% \overline{G}$ of order $n$, where $\overline{G}$ represents the complement of $G$. In this paper, we establish a lower bound for the Ramsey numbers related to the concept of strength of a graph and show a sharp lower bound for $f\left( n\right) $. In addition to these results, we provide another lower bound and remark some exact values for $f\left( n\right) $. Furthermore, we extend existing necessary and sufficient conditions involving the strength of a graph. Finally, we investigate bounds for $\mathrm{str}\left( G\right) +\mathrm{str}\left( \overline{G}\right) $ whenever $G$ and $\overline{G}$ are nonempty graphs of order $n$. Throughout this paper, we propose some open problems arising from our study.

A graph $G$ is called edge-magic if there exists a bijective function $f:V\left(G\right) \cup E\left(G\right)\rightarrow \left\{1, 2, \ldots , \left\vert V\left( G\right) \right\vert +\left\vert E\left( G\right) \right\vert \right\}$ such that $f\left(u\right) + f\left(v\right) + f\left(uv\right)$ is a constant (called the valence of $f$) for each $uv\in E\left( G\right) $. If $f\left(V \left(G\right)\right) =\left\{1, 2, \ldots , \left\vert V\left( G\right) \right\vert \right\}$, then $G$ is called a super edge-magic graph. A stronger version of edge-magic and super edge-magic graphs appeared when the concepts of perfect edge-magic and perfect super edge-magic graphs were introduced. The super edge-magic deficiency $ \mu_{s}\left(G\right)$ of a graph $G$ is defined to be either the smallest nonnegative integer $n$ with the property that $G \cup nK_{1}$ is super edge-magic or $+ \infty$ if there exists no such integer $n$. On the other hand, the edge-magic deficiency $ \mu\left(G\right)$ of a graph $G$ is the smallest nonnegative integer $n$ for which $G\cup nK_{1}$ is edge-magic, being $ \mu\left(G\right)$ always finite. In this paper, the concepts of (super) edge-magic deficiency are generalized using the concepts of perfect (super) edge-magic graphs. This naturally leads to the study of the valences of edge-magic and super edge-magic labelings. We present some general results in this direction and study the perfect (super) edge-magic deficiency of the star $K_{1,n}$.

A numbering $f$ of a graph $G$ of order $n$ is a labeling that assigns distinct elements of the set $\left\{ 1,2,\ldots ,n\right\} $ to the vertices of $G$. The strength $\textrm{str}_{f}\left( G\right)$ of a numbering $f:V\left( G\right) \rightarrow \left\{ 1,2,\ldots ,n\right\} $ of $G$ is defined by% \begin{equation*} \mathrm{str}_{f}\left( G\right) =\max \left\{ f\left( u\right) +f\left( v\right) \left| uv\in E\left( G\right) \right. \right\} \text{,} \end{equation*}% that is, $\mathrm{str}_{f}\left( G\right) $ is the maximum edge label of $G$ and the strength\ \textrm{str}$\left( G\right) $ of a graph $G$ itself is \begin{equation*} \mathrm{str}\left( G\right) =\min \left\{ \mathrm{str}_{f}\left( G\right) \left| f\text{ is a numbering of }G\right. \right\} \text{.} \end{equation*} In this paper, we present a sharp lower bound for the strength of a graph in terms of its domination number as well as its (edge) covering and (edge) independence number. We also provide a necessary and sufficient condition for the strength of a graph to attain the earlier bound in terms of their subgraph structure. In addition, we establish a sharp lower bound for the domination number of a graph under certain conditions.

A graph $G$ is called edge-magic if there exists a bijective function $f:V\left(G\right) \cup E\left(G\right)\rightarrow \left\{1, 2, \ldots , \left\vert V\left( G\right) \right\vert +\left\vert E\left( G\right) \right\vert \right\}$ such that $f\left(u\right) + f\left(v\right) + f\left(uv\right)$ is a constant for each $uv\in E\left( G\right) $. Also, $G$ is said to be super edge-magic if $f\left(V \left(G\right)\right) =\left\{1, 2, \ldots , \left\vert V\left( G\right) \right\vert \right\}$. Furthermore, the super edge-magic deficiency $ \mu_{s}\left(G\right)$ of a graph $G$ is defined to be either the smallest nonnegative integer $n$ with the property that $G \cup nK_{1}$ is super edge-magic or $+ \infty$ if there exists no such integer $n$. In this paper, we introduce the parameter $l\left(n\right)$ as the minimum size of a graph $G$ of order $n$ for which all graphs of order $n$ and size at least $l\left(n\right)$ have $\mu_{s} \left( G \right)=+\infty $, and provide lower and upper bounds for $l\left(G\right)$. Imran, Baig, and Fe\u{n}ov\u{c}\'{i}kov\'{a} established that for integers $n$ with $n\equiv 0\pmod{4}$, $ \mu_{s}\left(D_{n}\right) \leq 3n/2-1$, where $D_{n}$ is the cartesian product of the cycle $C_{n}$ of order $n$ and the complete graph $K_{2}$ of order $2$. We improve this bound by showing that $ \mu_{s}\left(D_{n}\right) \leq n+1$ when $n \geq 4$ is even. Enomoto, Llad\'{o}, Nakamigawa, and Ringel posed the conjecture that every nontrivial tree is super edge-magic. We propose a new approach to attak this conjecture. This approach may also help to resolve another labeling conjecture on trees by Graham and Sloane.

Magnetic anisotropy of epitaxially grown thin films is affected by the strain from the substrates due to a combined effect of distorted electronic structure and spin-orbit interaction (SOI). As an inverse process, one expects an anisotropy of the electronic structure induced by magnetization in the presence of SOI. We have studied the charge-density anisotropy induced by magnetization in thin films of the ferromagnetic metal La$_{1-x}$Sr$_{x}$MnO$_3$ via x-ray magnetic linear dichroism (XMLD). XMLD measurements on thin films with various thicknesses have shown that the XMLD intensity is proportional to the square of the ferromagnetic moment. Using the XMLD sum rule and cluster-model calculation, it has been shown that more Mn 3$d$ electrons are distributed in orbitals elongated along the direction parallel to the spin polarization than in orbitals elongated in the direction perpendicular to it. The cluster-model calculation has shown that the effect of tensile strain from the SrTiO$_3$ substrate on the XMLD spectra is also consistent with the observed XMLD spectral line shapes., Comment: 12 pages, 4 figures

Magnetic thin film heterostructures have been widely studied for fundamental interests in the emergence of novel phenomena accompanied by the heterointerface formation as well as their promising practical potential. Combining x-ray magnetic circular dichroism with scanning tunneling microscopy, we show for Mn/Fe thin film heterostructures that the interfacial factors dominating electronic and magnetic properties of the entire system dynamically change with the amount of the Mn overlayer. Element specific magnetization curves of the Fe layer exhibit a two-step spin reorientation transition from out-of-plane to in-plane direction with increasing the Mn coverage. Atomic-scale characterizations of structural and electronic properties in combination with the first-principles calculations successfully unravel the roles of the entangled interfacial factors, and clarify the driving forces of the transition. The first step of the transition at a low Mn coverage is dominantly induced by the formation of FeMn disordered alloy at the heterointerface, and the electronic hybridization with interfacial FeMn ordered alloy is dominant as the origin of the second step of the transition at a high Mn coverage.

In order to investigate the mechanism of ferromagnetic ordering in the new n-type magnetic semiconductor (In,Fe)As co-doped with Be, we have performed X-ray absorption spectroscopy and X-ray magnetic circular dichroism (XMCD) studies of ferromagnetic and paramagnetic samples. The spectral line shapes suggest that the ferromagnetism is intrinsic originating from Fe atoms incorporated into the Zinc-blende-type InAs lattice. The magnetization curves of Fe measured by XMCD were well reproduced by the superposition of a Langevin function representing superparamagnetic (SPM) behavior of nano-scale ferromagnetic domains and a T-linear function representing Curie-Weiss paramagnetism even much above the Curie temperatures. The data at 20 K showed a deviation from the Langevin behavior, suggesting a gradual establishment of macroscopic ferromagnetism on lowering temperature. The existence of nano-scale ferromagnetic domains indicated by the SPM behavior suggests spatial fluctuations of Fe concentration on the nano-scale.

We investigate the local electronic structure and magnetic properties of the group IV based ferromagnetic semiconductor, GeFe, using soft X ray magnetic circular dichroism. Our results show that the doped Fe 3d electrons are strongly hybridized with the Ge 4p states, and have an unusually large orbital magnetic moment relative to the spin magnetic moment; i.e., morb/mspin = 0.3. We find that local ferromagnetic domains, which are formed through ferromagnetic exchange interactions in the high Fe content regions of the GeFe films, exist at room temperature, well above the Curie temperature. We demonstrate the first observation of the intriguing nanoscale domain growth process in which ferromagnetic domains expand as the temperature decreases, followed by a transition of the entire film into a ferromagnetic state at the Curie temperature.

In-situ X-ray diffraction (XRD) and transmission electron microscopy (TEM) have been used to investigate many physical science phenomena, ranging from phase transitions, chemical reaction and crystal growth to grain boundary dynamics. A major limitation of in-situ XRD and TEM is a compromise that has to be made between spatial and temporal resolution. Here, we report the development of in-situ X-ray nanodiffraction to measure atomic-resolution diffraction patterns from single grains with up to 5 millisecond temporal resolution, and make the first real-time observation of grain rotation and lattice deformation during photoinduced chemical reactions. The grain rotation and lattice deformation associated with the chemical reactions are quantified to be as fast as 3.25 rad./sec. and as large as 0.5 Angstroms, respectively. The ability to measure atomic-resolution diffraction patterns from individual grains with several millisecond temporal resolution is expected to find broad applications in materials science, physics, chemistry, and nanoscience., Comment: 17 pages, 3 figures

Coherent diffraction imaging (CDI) using synchrotron radiation, X-ray free electron lasers (X-FELs), high harmonic generation, soft X-ray lasers, and optical lasers has found broad applications across several disciplines. An active research direction in CDI is to determine the structure of single particles with intense, femtosecond X-FEL pulses based on diffraction-before-destruction scheme. However, single-shot 3D structure determination has not been experimentally realized yet. Here we report the first experimental demonstration of single-shot 3D structure determination of individual nanocrystals using ~10 femtosecond X-FEL pulses. Coherent diffraction patterns are collected from high-index-faceted nanocrystals, each struck by a single X-FEL pulse. Taking advantage of the symmetry of the nanocrystal, we reconstruct the 3D structure of each nanocrystal from a single-shot diffraction pattern at ~5.5 nm resolution. As symmetry exists in many nanocrystals and virus particles, this method can be applied to 3D structure studies of such particles at nanometer resolution on femtosecond time scales., Comment: 18 pages, 4 figures