1. BMO-Doped REBCO-Coated Conductors for Uniform In-Field $I_{c}$ by Hot-Wall PLD Process Using IBAD Template
- Author
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Y. Adachi, Kazuomi Kakimoto, Satoshi Awaji, Kunihiro Naoe, Yasuhiro Iijima, Takahiro Fukuzaki, Shogo Muto, Masanori Daibo, Shinji Fujita, Wataru Hirata, Kohei Higashikawa, Takanobu Kiss, M. Igarashi, and Tomo Yoshida
- Subjects
010302 applied physics ,Materials science ,Laser ablation ,Condensed matter physics ,Doping ,Analytical chemistry ,Condensed Matter Physics ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,Magnetization ,0103 physical sciences ,Homogeneity (physics) ,Critical current ,Growth rate ,Electrical and Electronic Engineering ,010306 general physics ,Electrical conductor ,Pinning force - Abstract
BaMO 3 (BMO, M: Zr or Hf)-doped REBCO-coated conductors were prepared by Hot-Wall PLD method on IBAD template. The highest J c was obtained for BaHfO 3 -doped EuBCO. Quite strong pinning force density (F p ) of 1.6 TN/m 3 was observed at 4.2 K, 15 T, for a sample deposited with growth rate of ~5 nm/s. It had strong c-axis correlated pinning at the temperature above 20 K with the matching field of ~5 T. A 45-m-long sample was formed by productive high growth rate over 20 nm/s, being consistent with commercial nondoped conductors. It had also large I c of 1687 A/cm and F p of 0.96 7 TN/m 3 was obtained at 4.2 K, 15 T. The end-to-end longitudinal Ic homogeneity (σ) at 77 K in low field was evaluated to be 2.2% by magnetization. Transport in-fields I c were also measured for the both end points at 30 K, 2 T, resulting in 1863 and 1883A/cm, respectively.
- Published
- 2017
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