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Your search keyword '"Takatani, Shinichiro"' showing total 40 results
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40 results on '"Takatani, Shinichiro"'

2. Low noise, low switch loss 0.25 mum e/d pHEMT technology

Author

Asia-Pacific Microwave Conference (25th : 2011 : Melbourne, Vic.), Yuan, Cheng-Guan, Liu, SM Joseph, Takatani, Shinichiro, Danzilio, David, Chung, Jung-Tao, Chen, Frank, Chen, Kuan-Jen, Lo, Hung-Kuan, Huang, Clement, Chou, Edison, Ho, Jiro, and Chen, Risky

Published
2011

4. Pt/PbZr(sub x)Ti(sub 1-x)O3 interfacial reaction and Schottky barrier formation studied by x-ray photoelectron spectroscopy: effect of H2 and O2 annealing

Author

Takatani, Shinichiro, Miki, Hiroshi, Kushida-Abdelghafar, Keiko, and Torii, Kazuyoshi

Subjects
Annealing -- Research, Platinum compounds -- Research, Ferroelectric crystals -- Research, Physics
Abstract

A study was conducted to analyze the Pt/PbZr(sub x)Ti(sub 1-x)O3 interfacial reaction caused by low temperature annealing and resulting change in the surface Fermi level position. In vacuo x-ray photoelectron spectroscopy was utilized to carry out the analysis. Results indicated no annealing-atmospheric dependence in the amount of metallic Pb generated at the interface. Findings also showed an annealing-atmospheric dependence for samples annealed after Pt deposition.

Published
1999

5. Generation mechanism of gate leakage current due to reverse-voltage stress in i-AlGaAs/n-GaAs HIGFET's

Author

Takatani, Shinichiro, Matsumoto, Hidetoshi, Shigeta, Junji, Ohshika, Katsushi, Yamashita, Tomoko, and Fukui, Munetoshi

Subjects
Field-effect transistors -- Research, Semiconductors -- Research, Business, Electronics, Electronics and electrical industries
Abstract

Research shows that gate leakage current in a 0.35 micrometer WSi gate i-AlGaAs/n - GaAs doped channel heterostructure insulated-gate field-effect transistor rises in response to a -6V gate-to-drain voltage application. A substrate current and negative temperature coefficient were observed at impact ionization. Researchers have succeeded in developing a degradation model which can improve gate-edge electric field.

Published
1998

6. GaN technologies for applications from L- to Ka-band

Author

Lien, Yi-Wei, primary, Peng, Sheng-Wen, additional, Lin, Che-Kai, additional, Du, Jhih-Han, additional, Hsieh, Yun-Ting, additional, Tseng, Andy, additional, Wang, Wei-Chou, additional, Chou, Tung-Yao, additional, Lin, Wayne, additional, Jhan, Richard, additional, Huang, Clement, additional, Takatani, Shinichiro, additional, and Wohlmuth, Walter, additional

Published
2017
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7. Pt/PBZr...Ti...O... interfacial and Schottky barrier formation studied by x-ray photoelectron...

Author

Takatani, Shinichiro and Miki, Hiroshi

Subjects
*LOW temperatures, *ANNEALING of metals
Abstract

Studies the lead zirconate titanate (PZT) interfacial reaction caused by low-temperature annealing and resulting change in the surface Fermi level position using the x-ray photoelectron spectroscopy (XPS). Experimental framework of the study; Effects of annealing prior to platinum (Pt) deposition; Effects of annealing on a Pt-deposited PZT surface; Role of Pt in hydrogen and oxygen annealing.

Published
1999
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9. Temperature dependence of gate forward turn-on voltage (Vf) of i-A10.3Ga0. 7As/n-GaAs HIGFET's

Author

Futigami, Nobutaka, Kawata, Yukihiro, Takatani, Shinichiro, Shigeta, Junji, and Miyazaki, Masaru

Subjects
Field-effect transistors -- Research, Electrostatics -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

Studies of i-Al(0.3)Ga(0.7)As/n-GaAs doped-channel heterostructure insulated gate FET with 0.3 mu m gatelength reveal that the gate forward turn-on voltage temperature coefficient varies with the i-AlGaAs layer thickness. The minimum thickness is -0.8 to -0.9 mV/degree at a thickness of 10nm. At this thickness, the temperature coefficient value becomes 20% smaller than that of GaAs MESFET.

Published
1994

13. Low noise, low switch loss 0.25µm E/D pHEMT technology.

Author

Yuan, Cheng-Guan, Liu, S.M. Joseph, Takatani, Shinichiro, Danzilio, David, Chung, Jung-Tao, Chen, Frank, Chen, Kuan-Jen, Lo, Hung-Kuan, Huang, Clement, Chou, Edison, Ho, Jiro, and Chen, Risky

Abstract

A quarter-micron optical gate, enhancement / depletion (E/D)-mode pseudomorphic high electron mobility transistor (pHEMT) has been developed. The E-mode FET shows high extrinsic transconductance (830mS/mm) and high cut-off frequency (73GHz). The 8×50µm device operating at Vds = 1.8V and Ids = 50 mA/mm also demonstrates a low noise figure of 0.83dB and a high gain at 12 GHz. Linearity shown in IP3 is simultaneously improved. The D-mode FET exhibits a low Ron of 1.3 Ohm.mm, a low gate leakage current of 0.02µA/mm and a short switching time of 130 ns at Vg = −6V, which is suitable for switch applications. [ABSTRACT FROM PUBLISHER]

Published
2011

31. Pure-play GaN foundry technology for RF applications.

Author

Lin, Che-Kai, Du, Jhih-Han, Wang, Albert, Peng, Sheng-Wen, Chen, Chao-Hung, Chen, Chai-Hao, Chou, Tung-Yao, Wang, Wei-Chou, Wu, Jya-Shian, Kuo, Richard, Huang, Clement, Cho, I-Te, Wohlmuth, Walter, and Takatani, Shinichiro

Published
2014

32. Electronic properties of Se-treated SiO[sub 2]/GaAs interfaces.

Author

Kikawa, Takeshi and Takatani, Shinichiro

Subjects
*SEMICONDUCTOR diodes, *DISPERSION (Chemistry), *INTERFACES (Physical sciences)
Abstract

Examines metal-insular-semiconductor diodes with a Se-treated interface and photochemical-vapor-deposited SiO[sub 2]. Frequency dispersion in the capacitance of diodes; Reduction of density interface states near the midgap; Effects of Se-treated AlGaAs thin layer at the insular interface on the number of interface states.

Published
1992
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33. Electrical properties of thermally stable LaB6/GaAs Schottky diodes.

Author

Uchida, Yoko, Yokotsuka, Tatsuo, Nakashima, Hisao, and Takatani, Shinichiro

Subjects
SCHOTTKY barrier diodes, LANTHANUM compounds
Abstract

Electrical properties of LaB6/GaAs(001) Schottky diodes have been studied by current-voltage measurements. The diodes were made by depositing LaB6 on chemically etched GaAs and molecular beam epitaxy prepared GaAs-c(4×4) surfaces by electron beam evaporation. The barrier height and ideality factor show appropriate values for metal-semiconductor field-effect-semiconductor application and do not change much by high-temperature annealing. These results provide firm evidence that LaB6 is a very promising candidate for self-aligned gate material of GaAs integrated circuits. [ABSTRACT FROM AUTHOR]

Published
1987
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37. ArF-Excimer-Laser-Assisted Highly Selective Etching of InGaAs/InAlAs Using HBr and F2Gas Mixture

Author

Takazawa, Hiroyuki, Shinichiro Takatani, Shinichiro Takatani, and Seiji Yamamoto, Seiji Yamamoto

Abstract

Highly selective etching of InGaAs/InAlAs was achieved by irradiation with a 193-nm ArF excimer laser in a HBr and F2atmosphere. Adding F2gas to the HBr gas enhanced the InGaAs etching rate while reducing the InAlAs etching rate, resulting in an etching rate ratio of over 450. The etching mechanism is discussed in terms of pressure dependence and laser fluence dependence data. Our findings suggest that ArF-excimer-laser-assisted etching is feasible for gate-recess etching of InGaAs/InAlAs field effect transistors.

Published
1996
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38. GaAs MESFET's with a Thermally Stable LaB6Self-Aligned Gate

Author

Takatani, Shinichiro, Uchida, Yoko, Yokotsuka, Tatsuo, and Nakashima, Hisao

Abstract

It was found that lanthanum hexaboride (LaB6) forms a thermally stable Schottky contact with a high barrier height of about 0.9 V on a chemically-etched n-type GaAs(100) substrate. GaAs metal-semiconductor field effect transistors (MESFET's) having excellent DC characteristics were obtained using LaB6as a self-aligned gate. The high barrier height enabled normally-off MESFFT's to have a large operation margin.

Published
1987
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39. Evidence of Ga2Se3-Related Compounds on Se-Stabilized GaAs Surfaces

Author

Takatani, Shinichiro, Nakano, Asao, Ogata, Kiyoshi, and Takeshi Kikawa, Takeshi Kikawa

Abstract

A Se-stabilized GaAs(001) surface is examined by extended X-ray absorption fine structure (EXAFS) analysis. The Se K-edge EXAFS shows components due not only to the first but also the second nearest neighbors, indicating that the Se atoms are incorporated into ordered atomic arrangements. Comparing the interatomic distances to those measured for Ga2Se3and GaSe, it is concluded that the nature of the surface compound on the Se-stabilized GaAs surface is close to that of Ga2Se3.

Published
1992
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40. Effect of H2Annealing on a Pt/PbZrxTi1-xO3Interface Studied by X-Ray Photoelectron Spectroscopy

Author

Takatani, Shinichiro, Keiko Kushida-Abdelghafar, Keiko Kushida-Abdelghafar, and Hiroshi Miki, Hiroshi Miki

Abstract

The chemical reaction and the change in the Schottky barrier height at the Pt/PbZrxTi1-xO3(PZT) interface as a result of annealing was studied by in-vacuoX-ray photoelectron spectroscopy. Annealing at 320° C produced metallic Pb atoms which migrated on the Pt surface. There were more of these atoms when the annealing was done in H2than in a vacuum. After H2annealing, the core level peaks for the elements in the PZT showed a band bending shift of ?0.4 V toward higher binding energy, indicating that the n-type Schottky barrier height at the Pt/PZT interface was lowered by the H2annealing.

Published
1997
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