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In integrated photonic circuits, microring resonators are essential building blocks but are susceptible to phase errors due to fabrication imperfections and optical power fluctuations. Conventional active phase tuning methods are power-intensive and challenging to integrate into densely packed photonic chips. This study proposes a solution by integrating a thin 2D layer of In4/3P2Se6 (InPSe) onto silicon microring resonators (Si-MRR). This approach mitigates sensitivity to laser power and achieves non-volatile wavelength trimming. Under bias voltage, the device exhibits electro-optic behavior, offering a non-volatile phase trimming rate of −2.62 pm/V to −4.62 pm/V, corresponding to InPSe thicknesses of 45 nm to 120 nm. Low optical losses of 0.0091 to 0.0361 dB/μm were also measured, corresponding to thicknesses of 30 nm to 120 nm. The devices demonstrate stable in-situ resonance wavelength stabilization and bidirectional trimming, ensuring cyclic stability for non-volatile phase control. This advancement enhances the performance of silicon photonics across diverse applications, facilitating high-capacity, high-power operation in compact designs. [ABSTRACT FROM AUTHOR]

Despite the wide applications of Short-Wave Infrared (SWIR) imaging, standard imaging materials require lattice matching and complex fabrication techniques which are relatively expensive. In this work, 50 nm thick amorphous indium telluride (In2Te3) films are RF sputtered on a silicon (Si/SiO2) substrate at 300 °C. The films are used to fabricate back-gated field-effect photodetectors (PDs). The In2Te3 detectors exhibit a broad wavelength response from 406 nm to 1600 nm and a photo responsivity of 0.44 AW− under 1310 nm excitation at 5 V bias. Furthermore, an n-type behavior with an electron field-effect mobility of 1.15 cm2V−1s−1 is observed. We also evaluated the frequency response of the PDs under 1310 nm modulated light, a 3dB cut-off frequency of ~0.97 MHz is measured. Further, the device exhibits specific detectivity of $1.32\times 10^{{9}}$ Jones and very good stability at ambient conditions. [ABSTRACT FROM AUTHOR]

Two-dimensional crystals with a wealthof exotic dimensional-dependentproperties are promising candidates for next-generation ultrathinand flexible optoelectronic devices. For the first time, we demonstratethat few-layered InSe photodetectors, fabricated on both a rigid SiO2/Si substrate and a flexible polyethylene terephthalate (PET)film, are capable of conducting broadband photodetection from thevisible to near-infrared region (450–785 nm) with high photoresponsivitiesof up to 12.3 AW–1at 450 nm (on SiO2/Si) and 3.9 AW–1at 633 nm (on PET). These photoresponsivitiesare superior to those of other recently reported two-dimensional (2D)crystal-based (graphene, MoS2, GaS, and GaSe) photodetectors.The InSe devices fabricated on rigid SiO2/Si substratespossess a response time of ∼50 ms and exhibit long-term stabilityin photoswitching. These InSe devices can also operate on a flexiblesubstrate with or without bending and reveal comparable performanceto those devices on SiO2/Si. With these excellent optoelectronicmerits, we envision that the nanoscale InSe layers will not only findapplications in flexible optoelectronics but also act as an activecomponent to configure versatile 2D heterostructure devices. [ABSTRACT FROM AUTHOR]

Layers of transition metal dichalcogenides (TMDs) combine the enhanced effects of correlations associated with the two-dimensional limit with electrostatic control over their phase transitions by means of an electric field. Several semiconducting TMDs, such as MoS 2 , develop superconductivity (SC) at their surface when doped with an electrostatic field, but the mechanism is still debated. It is often assumed that Cooper pairs reside only in the two electron pockets at the K/K' points of the Brillouin Zone. However, experimental and theoretical results suggest that a multivalley Fermi surface (FS) is associated with the SC state, involving six electron pockets at Q/Q'. Here, we perform low-temperature transport measurements in ion-gated MoS 2 flakes. We show that a fully multivalley FS is associated with the SC onset. The Q/Q' valleys fill for doping ≳ 2 × 10 13 cm -2 , and the SC transition does not appear until the Fermi level crosses both spin-orbit split sub-bands Q  1 and Q  2 . The SC state is associated with the FS connectivity and promoted by a Lifshitz transition due to the simultaneous population of multiple electron pockets. This FS topology will serve as a guideline in the quest for new superconductors.