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We report second-harmonic and sum-frequency generation in Al0.4Ga0.6As-on-insulator microdisk resonators at ~775 nm wavelengths. Our experiments reveal clear polygonal-shaped whispering-gallery mode profiles.

Beyond various application-specific photonic integrated circuits (PICs), a programmable PIC comprising identically designed generic building blocks with multiple active functionalities under different operational conditions is an attractive design option. Here, we propose and demonstrate proof-of-concept experiments of a heterogeneously integrated III–V-on-Si microring resonator (MRR) as such a versatile building block. The MRR can function as an electro-optical channel add-drop switch with signal amplification, a directly modulated injection laser, or a microcavity photodetector under different electrical bias conditions. We discuss the fabrication process for our heterogeneous integration platform based on an atomic layer deposition-assisted molecular bonding technique.

The AlGaAs-on-insulator material platform offers compact, integrated nonlinear devices. The 43 - mm point-group symmetry of AlGaAs enables a natural quasi-phase-matching. In this talk, we will present our work on 4-bar quasi-phase-matching in square microcavities.

We unfold the design principles for heterogeneously integrated III-V-on-silicon microdisk unidirectional singlemode lasers. Our simulations suggest hybrid modes between the vertically coupled III-V and silicon microdisks of different radii. Our experiments reveal unidirectional singlemode lasing. © 2018 OSA.

We unfold the design principles for heterogeneously integrated III-V-on-silicon microdisk unidirectional singlemode lasers. Our simulations suggest hybrid modes between the vertically coupled III-V and silicon microdisks of different radii. Our experiments reveal unidirectional singlemode lasing. © 2018 OSA.

Heterogeneously integrated lasers comprising an active layer (e.g., III-V semiconductor multiple quantum wells) bonded on top of a passive silicon photonic layer on the silicon-on-insulator substrate have been proposed and studied as one of the light sources for optical interconnects. However, the buried oxide layer and the bonding layer inhibit heat dissipation and compromise the laser's performance. In this paper, we adopt a thermal shunt design that provides a direct path for the heat generated in the gain layer to reach the silicon substrate. Using finite element modeling, we illustrate the effectiveness of our thermal shunt designs. We improve the thermal resistance from 1241 K/W without an integrated thermal shunt to 296 K/W with an integrated p-electrode thermal shunt. We have also identified the parameters that give the optimal thermal performance.

Electrically pumped and directly modulated microlasers comprising a III-V semiconductor multi-quantum well (MQW) heterogeneously integrated on a silicon photonic chip are potentially a key building block for datacenter optical interconnects. We adopt a microspiral disk cavity in the silicon photonic layer, with a seamlessly coupled silicon waveguide at the microspiral notch, for unidirectional laser output-coupling characteristics. We integrate a ring-shaped electrode on top of the III-V gain layer in order to preferentially inject into a group of whispering-gallery-like modes for improved energy efficiency and mode selection. In this paper, we report multi-mode lasing under both pulsed and continuous injection at room temperature. The threshold current density is typically a few kA/cm(2).

Heterogeneously integrated lasers comprising an active layer (e.g., III-V semiconductor multiple quantum wells) bonded on top of a passive silicon photonic layer on the silicon-on-insulator substrate have been proposed and studied as one of the light sources for optical interconnects. However, the buried oxide layer and the bonding layer inhibit heat dissipation and compromise the laser's performance. In this paper, we adopt a thermal shunt design that provides a direct path for the heat generated in the gain layer to reach the silicon substrate. Using finite element modeling, we illustrate the effectiveness of our thermal shunt designs. We improve the thermal resistance from 1241 K/W without an integrated thermal shunt to 296 K/W with an integrated p-electrode thermal shunt. We have also identified the parameters that give the optimal thermal performance.

Electrically pumped and directly modulated microlasers comprising a III-V semiconductor multi-quantum well (MQW) heterogeneously integrated on a silicon photonic chip are potentially a key building block for datacenter optical interconnects. We adopt a microspiral disk cavity in the silicon photonic layer, with a seamlessly coupled silicon waveguide at the microspiral notch, for unidirectional laser output-coupling characteristics. We integrate a ring-shaped electrode on top of the III-V gain layer in order to preferentially inject into a group of whispering-gallery-like modes for improved energy efficiency and mode selection. In this paper, we report multi-mode lasing under both pulsed and continuous injection at room temperature. The threshold current density is typically a few kA/cm(2).