146 results on '"Tanikawa, Tomoyuki"'
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2. Metalorganic Vapor‐Phase Epitaxy of +c/−c GaN Polarity Inverted Bilayer for Transverse Quasi‐Phase‐Matched Wavelength Conversion Device.
3. Large Area Epitaxial Lateral Overgrowth of Semipolar (11¯$1 \left(\right. \macr \left.\right)$01) GaN Stripes on Patterned Si Substrates Prepared using Maskless Lithography.
4. Design of Horizontally Stacked AlN and Dielectric Cores Transverse Quasi‐Phase‐Matched Channel Waveguide for Squeezed Light Generation.
5. Fabrication of polarity inverted LiNbO3/GaN channel waveguide by surface activated bonding for high-efficiency transverse quasi-phase-matched wavelength conversion
6. Multiphoton Microscopy
7. Second harmonic generation from a-plane GaN vertical monolithic microcavity pumped with femtosecond laser
8. 229 nm far-ultraviolet second harmonic generation in vertically polarity inverted AlN bilayer channel waveguide
9. Observation of nanopipes in edge-defined film-fed grown β-Ga2O3 substrate and their effect on homoepitaxial surface hillocks
10. Polarity Inversion of GaN via AlN Oxidation Interlayer Using Metalorganic Vapor Phase Epitaxy
11. Fabrication of polarity inverted LiNbO3/GaN channel waveguide by surface activated bonding for high-efficiency transverse quasi-phase-matched wavelength conversion.
12. Second harmonic generation in GaN transverse quasi-phase-matched waveguide pumped with femtosecond laser
13. Polarity Inversion of GaN via AlN Oxidation Interlayer Using Metal–Organic Vapor Phase Epitaxy.
14. Fabrication and evaluation of rib-waveguide-type wavelength conversion devices using GaN-QPM crystals
15. Enlargement of mode size in annealed proton-exchanged periodically-poled MgO doped stoichiometric LiTaO3 waveguide for high power second harmonic generation
16. DUV coherent light emission from ultracompact microcavity wavelength conversion device
17. GaN channel waveguide with vertically polarity inversion formed by surface activated bonding for wavelength conversion
18. Optical properties of (1 1¯ 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates
19. Emission color modulation of InGaN/GaN multiple quantum wells by selective area metalorganic vapor phase epitaxy on hexagonal windows
20. Nondestructive characterization of threading dislocations in graded buffer layers of inverted metamorphic solar cells by two-photon excitation spectroscopy
21. Experimental Determination of Wavelength Conversion Efficiency in Transverse Quasi-Phase-Matched GaN SHG Waveguide Excited with Femtosecond Laser
22. Maskless selective growth of semi-polar (1 12¯ 2) GaN on Si (3 1 1) substrate by metal organic vapor phase epitaxy
23. Temperature-dependent radiative and non-radiative dynamics of photo-excited carriers in extremely high-density and small InGaN nanodisks fabricated by neutral-beam etching using bio-nano-templates.
24. Monolithic microcavity second harmonic generation device using low birefringence paraelectric material without polarity-inverted structure
25. Enlargement of mode size in annealed proton-exchanged periodically-poled MgO doped stoichiometric LiTaO3 waveguide for high power second harmonic generation.
26. Identification of Burgers vectors of threading dislocations in freestanding GaN substrates via multiphoton-excitation photoluminescence mapping
27. Nondestructive characterization of GaN by multiphoton-excitation photoluminescence mapping
28. Novel wavelength converters made of nitride semiconductors: transverse QPM waveguides and monolithic microcavities
29. 199 nm vacuum-ultraviolet second harmonic generation from SrB4O7vertical microcavity pumped with picosecond laser
30. Continuous-wave operation of InGaN tunable single-mode laser with periodically slotted structure
31. Buried annealed proton-exchanged waveguide in periodically-poled MgO:LiTaO3fabricated by surface-activated bonding for high-power wavelength conversion
32. Observation of Dislocations in Graded Buffer Layers of IMM Single Junction InGaAs Solar Cells by Two-Photon Excitation Photoluminescence
33. Growth of GaN and improvement of lattice curvature using symmetric hexagonal SiO2 patterns in HVPE growth
34. Reuse of ScAlMgO4 substrates utilized for halide vapor phase epitaxy of GaN
35. Multiphoton-Excitation Photoluminescence as a Tool for Defect Characterization of GaN Crystal
36. Observation of Threading Dislocation in Thick GaN Crystal Using Inelastically Scattered Electron
37. Demonstration of a violet-distributed feedback laser with fairly small temperature dependence in current-light characteristics
38. Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence
39. N-polar GaN/AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching
40. Biexciton Emission From Single Quantum-Confined Structures in N-Polar (000-1) InGaN/GaN Multiple Quantum Wells
41. Optical Study of Sub-10 nm In0.3Ga0.7N Quantum Nanodisks in GaN Nanopillars
42. Halide vapor phase epitaxy of thick GaN films on ScAlMgO4substrates and their self-separation for fabricating freestanding wafers
43. Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations
44. Control of impurity concentration in N-polar (0001¯) GaN grown by metalorganic vapor phase epitaxy
45. Optical Study of Sub-10 nm In0.3Ga0.7N Quantum Nanodisks in GaN Nanopillars
46. Ga-polar GaN film grown by MOVPE on cleaved ScAlMgO4(0001) substrate with millimeter-scale wide terraces
47. Nanometer scale fabrication and optical response of InGaN/GaN quantum disks
48. Homogeneity improvement of N-polar InGaN/GaN multiple quantum wells by using c-plane sapphire substrate with off-cut-angle toward a-sapphire plane
49. Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN template by metalorganic vapor phase epitaxy
50. Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar $(000\bar{1})$ p-type GaN grown by metalorganic vapor phase epitaxy
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