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1. Novel 2D/3D Heterojunction for UV Light‐Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer

2. Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

4. Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Template

6. Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN

7. Van der Waals epitaxy of nitride optoelectronic devices based on two-dimensional hBN

8. Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

9. Core–shell GaN–ZnO moth-eye nanostructure arrays grown on a-SiO2/Si (1 1 1) as a basis for improved InGaN-based photovoltaics and LEDs

10. BAlN thin layers for deep UV applications

11. Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study

12. Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE

13. Modeling of polarization effects on n-GaN/i-InGaN/p-Gan solar cells with ultrathin GaN interlayers

14. Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials

15. Submicron beam X-ray diffraction of nanoheteroepitaxily grown GaN: Experimental challenges and calibration procedures

16. CuIn1−x GaxS2 wide gap absorbers grown by close-spaced vapor transport

17. Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers

18. GaN thin films on z‐ and x ‐cut LiNbO 3 substrates by MOVPE

19. Design, fabrication and characterization of near milliwatt power RCLEDs emitting at 390 nm

20. Nondestructive mapping of chemical composition and structural qualities of group III-nitride nanowires using submicron beam synchrotron-based X-ray diffraction

21. Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

22. Comparison of chemical and laser lift-off for the transfer of InGaN-based p-i-n junctions from sapphire to glass substrates

23. Characteristics of the surface microstructures in thick InGaN layers on GaN

24. Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells

25. Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer

26. Asymmetrical Design of AlGaN/GaN Distributed Bragg Reflectors for Near-UV Optoelectronic Applications

27. Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire

28. Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices

29. A study of BGaN back-barriers for AlGaN/GaN HEMTs

30. Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy

31. Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

32. Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE

33. Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films

34. Application of dilute boron B(Al,In,Ga)N alloys for UV light sources

35. Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices

36. Blue-violet boron-based Distributed Bragg Reflectors for VCSEL application

37. Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates

38. Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content

39. Deep structural analysis of novel BGaN material layers grown by MOVPE

40. Electrical and structural characterizations of BGaN thin films grown by metal‐organic vapor‐phase epitaxy

41. Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates

42. AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm

43. Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications

44. Microstructural compositional, and optical characterization of GaN grown by metal organic vapor phase epitaxy on ZnO epilayers

45. Bandgap bowing in BGaN thin films

46. Use of PLD-grown moth-eye ZnO nanostructures as templates for MOVPE growth of InGaN-based photovoltaics

47. Modeling of N-i-P Vs. P-i-N InGaN Solar Cells with Ultrathin GaN Interlayers for Improved Performance

48. New generation of distributed Bragg reflectors based on BAlN/AlN structures for deep UV-optoelectronic applications

49. Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer.

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