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1. Novel 2D/3D Heterojunction for UV Light‐Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer

Author: Andre Perepeliuc, Rajat Gujrati, Phuong Vuong, Vishnu Ottapilakkal, Thi May Tran, Mohamed Bouras, Ali Kassem, Ashutosh Srivastava, Tarik Moudakir, Gilles Patriarche, Paul Voss, Suresh Sundaram, Jean Paul Salvestrini, and Abdallah Ougazzaden
Subjects: 2D/3D heterojunction, hole injection layer, p‐doped hexagonal boron nitride, UV light‐emitting diodes, Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467
Abstract: The AlGaN materials system has been extensively studied in order to improve the efficiency of UV‐B and UV‐C light‐emitting diodes (LEDs). While progress has been made, significant challenges remain at shorter wavelengths. Most notably, increased Al composition for shorter‐wavelength operation results in increased activation energy of Mg dopants, resulting in low p‐doping. Although p‐doped h‐BN, with a bandgap of 5.9 eV, has been proposed as a potential replacement of p‐doped AlGaN, there have not been demonstrations of LEDs fabricated from p‐doped h‐BN/AlGaN heterostructures. Such unique heterostructures combine 2D p‐doped h‐BN materials with 3D AlGaN materials. Herein, fabrication and characterization of p‐doped h‐BN/AlGaN multiple quantum wells (MQWs)/n‐AlGaN LEDs, demonstrating emission of light at 290 nm corresponding to the AlGaN MQWs, with weaker emission at 262 nm corresponding to the AlGaN barrier, are reported. These results conclusively show hole injection through p‐doped h‐BN into AlGaN and provide a proof of concept that p‐doped h‐BN can be an alternative hole injection layer for UV LEDs.
Published: 2025
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2. Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

Author: Soufiane Karrakchou, Suresh Sundaram, Taha Ayari, Adama Mballo, Phuong Vuong, Ashutosh Srivastava, Rajat Gujrati, Ali Ahaitouf, Gilles Patriarche, Thierry Leichlé, Simon Gautier, Tarik Moudakir, Paul L. Voss, Jean Paul Salvestrini, and Abdallah Ougazzaden
Subjects: Medicine, Science
Abstract: Abstract Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our group as an enabling solution for h-BN-based device transfer. By using a patterned dielectric mask with openings slightly larger than device sizes, pick-and-place of discrete LEDs onto flexible substrates was achieved. A more detailed study is needed to understand the effect of this selective area growth on material quality, device performance and device transfer. Here we present a study performed on two types of LEDs (those grown on h-BN on patterned and unpatterned sapphire) from the epitaxial growth to device performance and thermal dissipation measurements before and after transfer. Millimeter-size LEDs were transferred to aluminum tape and to silicon substrates by van der Waals liquid capillary bonding. It is shown that patterned samples lead to a better material quality as well as improved electrical and optical device performances. In addition, patterned structures allowed for a much better transfer yield to silicon substrates than unpatterned structures. We demonstrate that SAVWE, combined with either transfer processes to soft or rigid substrates, offers an efficient, robust and low-cost heterogenous integration capability of large-size devices to silicon for photonic and electronic applications.
Published: 2020
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3. High electron mobility transistor-based hydrogen sensor using ITO as a sensing layer.

Author: Md. Iktiham Bin Taher, Yacine Halfaya, Rouba Alrammouz, Mathieu Lazerges, Aurelien Randi, Tarik Moudakir, Nossikpendou Yves Sama, Thomas Guermont, Nicolas Pelissier, Thomas Pichler, Médéric Piedevache, Jacques Pironon, and Simon Gautier
Published: 2021
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4. Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Template

Author: Rajat Gujrati, Ashutosh Srivastava, Phuong Vuong, Vishnu Ottapilakkal, Yves N. Sama, Thi Huong Ngo, Tarik Moudakir, Gilles Patriarche, Simon Gautier, Paul L. Voss, Suresh Sundaram, Jean Paul Salvestrini, and Abdallah Ougazzaden
Subjects: Mechanics of Materials, General Materials Science, Industrial and Manufacturing Engineering
Published: 2023
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5. Influence of Sapphire Substrate Orientation on the van der Waals Epitaxy of III-Nitrides on 2D Hexagonal Boron Nitride: Implication for Optoelectronic Devices

Author: Phuong Vuong, Suresh Sundaram, Vishnu Ottapilakkal, Gilles Patriarche, Ludovic Largeau, Ashutosh Srivastava, Adama Mballo, Tarik Moudakir, Simon Gautier, Paul L. Voss, Jean-Paul Salvestrini, and Abdallah Ougazzaden
Subjects: General Materials Science
Published: 2022
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6. Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN

Author: Tarik Moudakir, Suresh Sundaram, Paul L. Voss, Simon Gautier, Phuong Vuong, Stefano Leone, Fouad Benkhelifa, Jean-Paul Salvestrini, Adama Mballo, Abdallah Ougazzaden, Gilles Patriarche, Soufiane Karrakchou, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Fraunhofer Institute for Applied Solid State Physics (Fraunhofer IAF), Fraunhofer (Fraunhofer-Gesellschaft), ANR Labex Ganex, and ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011)
Subjects: Materials science, mechanical transfer, Diffusion, semiconductors, 02 engineering and technology, High-electron-mobility transistor, 010402 general chemistry, 01 natural sciences, flexible (opto) electronics, transferrable nanodevices, [SPI.MECA.MEMA]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Mechanics of materials [physics.class-ph], General Materials Science, 2D boron nitride, business.industry, Delamination, Heterojunction, Adhesion, III-nitrides, 021001 nanoscience & nanotechnology, [SPI.TRON]Engineering Sciences [physics]/Electronics, 0104 chemical sciences, Semiconductor, Sapphire, Optoelectronics, 0210 nano-technology, business, Layer (electronics)
Abstract: International audience; Hexagonal boron nitride (h-BN) can be used as a p-doped material in wide-bandgap optoelectronic heterostructures or as a release layer to allow lift-off of grown three-dimensional (3D) GaN-based devices. To date, there have been no studies of factors that lead to or prevent lift-off and/or spontaneous delamination of layers. Here, we report a unique approach of controlling the adhesion of this layered material, which can result in both desired lift-off layered h-BN and mechanically inseparable robust h-BN layers. This is accomplished by controlling the diffusion of Al atoms into h-BN from AlN buffers grown on h-BN/sapphire. We present evidence of Al diffusion into h-BN for AlN buffers grown at high temperatures compared to conventional-temperature AlN buffers. Further evidence that the Al content in BN controls lift-off is provided by comparison of two alloys, Al 0.03 B 0.97 N/sapphire and Al 0.17 B 0.83 N/sapphire. Moreover, we tested that management of Al diffusion controls the mechanical adhesion of high-electron-mobility transistor (HEMT) devices grown on AlN/h-BN/sapphire. The results extend the control of two-dimensional (2D)/3D hetero-epitaxy and bring h-BN closer to industrial application in optoelectronics.
Published: 2020
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7. Van der Waals epitaxy of nitride optoelectronic devices based on two-dimensional hBN

Author: Paul L. Voss, Abdallah Ougazzaden, Simon Gautier, Tarik Moudakir, Ali Ahaitouf, Gilles Patriarche, Phuong Vuong, Jean-Paul Salvestrini, Adama Mballo, Ashutosh Srivastava, Suresh Sundaram, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), ANR Labex Ganex, ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), and ANR-10-EQPX-0050,TEMPOS,Microscopie electronique en transmission sur le plateau Palaiseau Orsay Saclay(2010)
Subjects: Materials science, Photodetector, 02 engineering and technology, Substrate (electronics), Nitride, Field effect transistors, Optoelectronic devices, 01 natural sciences, law.invention, 010309 optics, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Metalorganic vapour phase epitaxy, business.industry, Sensors, Photodetectors, Heterojunction, 021001 nanoscience & nanotechnology, Light emitting diodes, chemistry, Boron nitride, Heterojunctions, Optoelectronics, Photonics, 0210 nano-technology, business, Light-emitting diode, Epitaxy
Abstract: International audience; Combined photonic and electronic systems require diverse devices to be co-integrated on a common platform. This heterogeneous integration is made possible through several separation and transfer methods where the functioning epilayers are essentially released from their growth substrate. The use of 2D layered h-BN as a mechanical release layer has been demonstrated to be a promising technique for the hybrid integration of III-nitride devices. In this talk we will give an overview of our results on wafer-scale van der Waals epitaxy by MOVPE of different III-N heterostructure devices such as LEDs, HEMTs, solar cells, sensors and photodetectors. Furthermore, mechanical release and transfer techniques of crack-free III-N devices on foreign substrates will be presented along with a comparison between the device performances before and after transfer.
Published: 2021
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8. Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

Author: Simon Gautier, Soufiane Karrakchou, Ali Ahaitouf, Phuong Vuong, Tarik Moudakir, Gilles Patriarche, Rajat Gujrati, Ashutosh Srivastava, Suresh Sundaram, Thierry Leichle, Taha Ayari, Adama Mballo, Jean-Paul Salvestrini, Paul L. Voss, Abdallah Ougazzaden, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Équipe Microsystèmes électromécaniques (LAAS-MEMS), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, ANR Labex Ganex, ANR Inmost (AAP 2019), ANR-19-CE08-0025,INMoSt,Cellules solaires multi-jonctions multi-fils à base de nano-pyramides d'InGaN(2019), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)
Subjects: Materials science, Silicon, Science, chemistry.chemical_element, 02 engineering and technology, Dielectric, Epitaxy, Two-dimensional materials, 01 natural sciences, Article, law.invention, symbols.namesake, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Electronic devices, 010302 applied physics, Multidisciplinary, business.industry, 021001 nanoscience & nanotechnology, chemistry, Sapphire, symbols, Medicine, Optoelectronics, Photonics, van der Waals force, 0210 nano-technology, business, Layer (electronics), Light-emitting diode
Abstract: Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our group as an enabling solution for h-BN-based device transfer. By using a patterned dielectric mask with openings slightly larger than device sizes, pick-and-place of discrete LEDs onto flexible substrates was achieved. A more detailed study is needed to understand the effect of this selective area growth on material quality, device performance and device transfer. Here we present a study performed on two types of LEDs (those grown on h-BN on patterned and unpatterned sapphire) from the epitaxial growth to device performance and thermal dissipation measurements before and after transfer. Millimeter-size LEDs were transferred to aluminum tape and to silicon substrates by van der Waals liquid capillary bonding. It is shown that patterned samples lead to a better material quality as well as improved electrical and optical device performances. In addition, patterned structures allowed for a much better transfer yield to silicon substrates than unpatterned structures. We demonstrate that SAVWE, combined with either transfer processes to soft or rigid substrates, offers an efficient, robust and low-cost heterogenous integration capability of large-size devices to silicon for photonic and electronic applications.
Published: 2020
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9. Core–shell GaN–ZnO moth-eye nanostructure arrays grown on a-SiO2/Si (1 1 1) as a basis for improved InGaN-based photovoltaics and LEDs

Author: Teresa Monteiro, D. J. Rogers, Abdallah Ougazzaden, Damien McGrouther, Tarik Moudakir, Marco Peres, Michael Molinari, M.J. Soares, F. Hosseini Teherani, A.J. Neves, Philippe Bove, Michel Troyon, R. McClintock, M. Abid, Manijeh Razeghi, Simon Gautier, V. E. Sandana, H.-J. Drouhin, and J. N. Chapman
Subjects: Materials science, business.industry, Scanning electron microscope, Nanowire, Cathodoluminescence, Condensed Matter Physics, Epitaxy, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, Pulsed laser deposition, Hardware and Architecture, law, Photovoltaics, Optoelectronics, Electrical and Electronic Engineering, business, Light-emitting diode, Wurtzite crystal structure
Abstract: Self-forming, vertically-aligned, ZnO moth-eye-like nanoarrays were grown by catalyst-free pulsed laser deposition on a-SiO2/Si (1 1 1) substrates. X-Ray Diffraction (XRD) and Cathodoluminescence (CL) studies indicated that nanostructures were highly c-axis oriented wurtzite ZnO with strong near band edge emission. The nanostructures were used as templates for the growth of non-polar GaN by metal organic vapor phase epitaxy. XRD, scanning electron microscopy, energy dispersive X-ray microanalysis and CL revealed ZnO encapsulated with GaN, without evidence of ZnO back-etching. XRD showed compressive epitaxial strain in the GaN, which is conducive to stabilization of the higher indium contents required for more efficient green light emitting diode (LED) and photovoltaic (PV) operation. Angular-dependent specular reflection measurements showed a relative reflectance of less than 1% over the wavelength range of 400–720 nm at all angles up to 60°. The superior black-body performance of this moth-eye-like structure would boost LED light extraction and PV anti-reflection performance compared with existing planar or nanowire LED and PV morphologies. The enhancement in core conductivity, provided by the ZnO, would also improve current distribution and increase the effective junction area compared with nanowire devices based solely on GaN.
Published: 2015
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10. BAlN thin layers for deep UV applications

Author: Tarik Moudakir, Suresh Sundaram, Xin Li, Youssef El Gmili, Russell D. Dupuis, Paul L. Voss, Gilles Patriarche, Frédéric Genty, Jean-Paul Salvestrini, Sophie Bouchoule, and Abdallah Ougazzaden
Subjects: 010302 applied physics, Thin layers, Materials science, Scanning electron microscope, business.industry, Zone axis, 02 engineering and technology, Surfaces and Interfaces, Substrate (electronics), 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, 0103 physical sciences, Materials Chemistry, Optoelectronics, Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, 0210 nano-technology, business, Layer (electronics), Wurtzite crystal structure
Abstract: In this work, wurtzite BAlN layers with boron composition as high as 12% were successfully grown by MOVPE. The growth was performed at 650 °C and then annealed at 1020 °C. Low temperature growth was used in order to alleviate B-rich phase poisoning under high TEB/III ratio. The growth was performed by continuous epitaxy as well as by flow-modulate epitaxy. BAlN single layers with clearly defined X-ray diffraction peaks were achieved on AlN templates which are appropriate substrates for deep UV devices, as well as on GaN templates to facilitate distinguishing of the XRD peak of BAlN from the substrate peak. The layer demonstrated columnar crystalline features and inherited wurtzite structure from substrates. Cross-section STEM image (bright field) of 75 nm thick BAlN layers containing 12% boron taken along the [11−2 0] zone axis. Zone A is lattice-oriented along c-axis and zone B has columnar structure; (b) higher magnification image for the top part of the layer; (c) higher magnification image for the film/substrate interface.
Published: 2015
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11. Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study

Author: Suresh Sundaram, Konstantinos Pantzas, Gilles Patriarche, Abdallah Ougazzaden, Jimmy Hester, Jean-Paul Salvestrini, Tarik Moudakir, G. Orsal, Y. El Gmili, and Ali Ahaitouf
Subjects: Diffraction, Photoluminescence, Materials science, Polymers and Plastics, business.industry, Relaxation (NMR), Metals and Alloys, Cathodoluminescence, Electronic, Optical and Magnetic Materials, law.invention, Total thickness, law, Solar cell, Ceramics and Composites, Optoelectronics, Thin film, business, Layer (electronics)
Abstract: We report a comparison of the morphological, structural and optical properties of both InGaN single-layer and multilayered structures, the latter consisting of periodic thin GaN interlayers inserted during InGaN growth. It is shown that such a structure suppresses the In concentration fluctuations and corresponding different states of strain relaxation with depth, both detrimental to solar cell applications. Measurements performed by X-ray diffraction, cathodoluminescence and photoluminescence demonstrate that this multilayer growth is a promising approach to increase both the InGaN layer total thickness and In content in InGaN epilayers. As an example, single-phase 120 nm thick InGaN with 14.3% In content is obtained and found to possess high structural quality.
Published: 2013
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12. Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE

Author: Y. El Gmili, M. Abid, David Troadec, Konstantinos Pantzas, Simon Gautier, Frédéric Genty, Joel Jacquet, Paul L. Voss, S. Suresh, Tarik Moudakir, Abdallah Ougazzaden, Gilles Patriarche, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), T1, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), and CentraleSupélec-Université de Lorraine (UL)-CentraleSupélec-Université de Lorraine (UL)
Subjects: 010302 applied physics, Materials science, business.industry, High reflectivity, Phase (waves), Algan gan, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Reflectivity, Organic vapor, Inorganic Chemistry, 0103 physical sciences, Materials Chemistry, Optoelectronics, Wafer, Metalorganic vapour phase epitaxy, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract: AlGaN/GaN distributed Bragg reflectors have been grown on GaN templates by Metal Organic Vapor Phase Epitaxy (MOVPE). To overcome the problem of crack generation and achieve high reflectivity with an optimum number of periods a simple approach has been investigated. Using this approach, a coherently strained 20-pair Al 0.27 Ga 0.73 N/GaN (42 nm/36 nm) DBR has been designed and grown. No cracks were observed over 2” wafer. Around 90% reflectivity at 384 nm and a stop-bandwidth of 18 nm was obtained by having good crystalline quality and abrupt and flat interfaces.
Published: 2013
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13. Modeling of polarization effects on n-GaN/i-InGaN/p-Gan solar cells with ultrathin GaN interlayers

Author: Konstantinos Pantzas, Tarik Moudakir, Jeramy Dickerson, Abdallah Ougazzaden, and Paul L. Voss
Subjects: Materials science, business.industry, law, Solar cell, Optoelectronics, Electrical and Electronic Engineering, business, Polarization (waves), Computer communication networks, Atomic and Molecular Physics, and Optics, Quantum tunnelling, Electronic, Optical and Magnetic Materials, law.invention
Abstract: We report the numerical study of n-GaN/i-InGaN/p-GaN solar cells on Ga-face substrates with thin GaN interlayers present in the intrinsic InGaN region. These interlayers have recently been shown to significantly increase the crystal quality of thick InGaN layers $$(>\!\!\!120\,\text{ nm})$$ . We find that tunneling is efficient in n-i-p structures having interlayers $$\le \! 1.5\,\text{ nm}$$ thick if polarization charges are sufficiently screened. If left unscreened, the large polarization charges naturally formed at the heterointerfaces degrades n-i-p performance, at a given interlayer thickness, because polarization charges increase the distance that carriers must tunnel. Simulations identify favorable parameter ranges.
Published: 2013
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14. Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials

Author: M. Abid, Abdallah Ougazzaden, Tarik Moudakir, Simon Gautier, G. Orsal, Vanessa Gorge, Paul L. Voss, Gilles Patriarche, Konstantinos Pantzas, and Zakaria Djebbour
Subjects: Materials science, chemistry.chemical_element, 02 engineering and technology, Nitride, Indium gallium nitride, 7. Clean energy, 01 natural sciences, law.invention, Strain energy, chemistry.chemical_compound, law, 0103 physical sciences, Solar cell, Materials Chemistry, Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, 010302 applied physics, business.industry, Relaxation (NMR), Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, 0210 nano-technology, business, Layer (electronics), Indium
Abstract: In this paper we report on a spontaneous 2D/3D transition observed in InGaN alloys after 60 nm of growth. This transition is responsible for the formation of a stack of distinct InGaN layers. The driving mechanism is shown to be lateral fluctuations of the indium composition, that arise to accommodate the increasing strain energy of the InGaN layer. Three distinct stages of growth have been identified. First, a homogeneous, 2D InGaN layer forms, pseudomorphically strained on the underlying GaN. Then, at around 30 nm large lateral fluctuations of the indium composition are observed and a second pseudomorphic layer, composed of indium-rich and indium-poor clusters, is formed. Finally induces a 2D/3D transition at 60 nm and a 3D InGaN layer is formed.
Published: 2011
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15. Submicron beam X-ray diffraction of nanoheteroepitaxily grown GaN: Experimental challenges and calibration procedures

Author: Simon Gautier, P. L. Bonanno, Alexander Kazimirov, Abderrahim Ramdane, L. Le Gratiet, Nabila Maloufi, Jérôme Martin, W. H. Goh, Andrei Sirenko, Abdallah Ougazzaden, Tarik Moudakir, M.B. Assouar, Z.-H. Cai, and Anthony Martinez
Subjects: Diffraction, Nuclear and High Energy Physics, Materials science, business.industry, Synchrotron radiation, Advanced Photon Source, Synchrotron, law.invention, Reciprocal lattice, Optics, Beamline, law, Optoelectronics, Metalorganic vapour phase epitaxy, Nanodot, business, Instrumentation
Abstract: Highly relaxed GaN nanodots and submicron ridges have been selectively grown in the NSAG regime using MOVPE on lattice mismatched 6H–SiC and AlN substrates. 2D real space and 3D reciprocal space mapping was performed with a CCD detector using 10.4 keV synchrotron X-ray radiation at the 2-ID-D micro-diffraction beamline at Advanced Photon Source (APS). Calibration procedures have been developed to overcome the unique challenges of analyzing NSAG structures grown on highly mismatched substrates. We studied crystallographic planar bending on the submicron scale and found its correlation with strain relaxation in the NSAG ridges.
Published: 2010
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16. CuIn1−x GaxS2 wide gap absorbers grown by close-spaced vapor transport

Author: K. Djessas, Tarik Moudakir, and G. Massé
Subjects: Superstructure, Absorption spectroscopy, business.industry, Chemistry, Energy-dispersive X-ray spectroscopy, Analytical chemistry, Substrate (electronics), Condensed Matter Physics, Inorganic Chemistry, Optics, Electrical resistivity and conductivity, Materials Chemistry, Deposition (phase transition), Crystallite, Thin film, business
Abstract: CuIn 1− x Ga x S 2 wide gap absorber thin films were grown by means of a low cost method using the close-spaced vapor transport principle. No high-cost vacuum apparatus is needed. From X-ray analyses, the chalcopyrite superstructure was found to be present on all the samples, except when the substrate temperatures were below 300 °C. Energy dispersive spectroscopy studies showed a large quasi-stoichiometry range, corresponding to substrate temperatures between 300 and 600 °C (glass substrate use limit). For initial pressures in the reactor close or equal to the atmospheric value, quasi-columnar structures were grown, with crystallite sizes of about 1 μm and thicknesses of the order of 2 μm. The deposition rates were about 0.05 μm/min. For low pressures (
Published: 2004
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17. Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers

Author: Tarik Moudakir, Konstantinos Pantzas, V. E. Sandana, R. McClintock, F. Hosseini Teherani, Manijeh Razeghi, Akhil Rajan, Paul L. Voss, Abdallah Ougazzaden, Suresh Sundaram, Kevin Alan Prior, Y. El Gmili, Philippe Bove, and D. J. Rogers
Subjects: Materials science, business.industry, Scanning electron microscope, Polishing, Gallium nitride, Substrate (electronics), Isotropic etching, law.invention, chemistry.chemical_compound, chemistry, law, Sapphire, Optoelectronics, Thin film, business, Light-emitting diode
Abstract: Free-standing (0002)-oriented GaN substrates (φ = 2”) were coated with 200 nm of ZnO and used as templates for the growth of GaN thin films. SEM and AFM revealed that such GaN layers had a relatively homogenous surface morphology with an RMS roughness (5 μm x 5 μm) of less than 4nm. XRD studies revealed strained ZnO growth on the GaN substrate and the reproduction of the substrate rocking curve for the GaN overlayers after only a hundred nm of growth, thus indicating that the GaN films had superior crystallographic quality compared to those grown on sapphire or ZnO/sapphire substrates. Quarter-wafer areas of GaN were removed from the GaN substrate (by selective chemical etching away of the ZnO interlayer). The expensive GaN substrates were then reclaimed/reused (without the need for polishing) for a second cycle of ZnO and GaN growth, which gave similar XRD, SEM, CL and AFM results to the first cycle.
Published: 2014
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18. GaN thin films on z‐ and x ‐cut LiNbO 3 substrates by MOVPE

Author: Simon Gautier, G. Orsal, Andrei Sirenko, T. Aggerstam, Abdallah Ougazzaden, Jean-Paul Salvestrini, Tarik Moudakir, Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), UMI GT CNRS, and Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, Diffraction, Materials science, business.industry, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Metalorganic vapour phase epitaxy, Thin film, 0210 nano-technology, business
Abstract: International audience; We report epitaxial growth of GaN layers on z- and x-cut LiNbO3 substrates using MOVPE. GaN layers with the thick- ness of 450 nm were characterized using X-ray diffraction. For both, z- and x-cut orientations of LiNbO3 substrates, the GaN layers have c-axis orientation normal to the substrate plane and the in-plane lattice orientation of GaN layers coin- cides with the primary axes of LiNbO3 substrates. Although GaN layers exhibit almost complete strain relaxation, the re- sidual compressive strain determined with respect to a free- standing GaN is of the order of +0.37% and +0.2% for z- and x-cut substrates, respectively.
Published: 2008
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19. Design, fabrication and characterization of near milliwatt power RCLEDs emitting at 390 nm

Author: Gilles Patriarche, Frédéric Genty, S. Suresh, Abdallah Ougazzaden, Klaus Köhler, Wilfried Pletschen, Thorsten Passow, Joachim Wagner, Tarik Moudakir, P. Borner, Michael Kunzer, Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), OPTEL - Equipe Optique et électronique pour les télécoms, Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL)-CentraleSupélec-Université de Lorraine (UL), Fraunhofer Institute for Applied Solid State Physics (Fraunhofer IAF), Fraunhofer (Fraunhofer-Gesellschaft), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Publica, Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS)
Subjects: lcsh:Applied optics. Photonics, Fabrication, Materials science, 02 engineering and technology, Dielectric, 01 natural sciences, 7. Clean energy, law.invention, GaN, Optics, law, 0103 physical sciences, lcsh:QC350-467, Electrical and Electronic Engineering, Diode, 010302 applied physics, fiber coupling, business.industry, Wide-bandgap semiconductor, lcsh:TA1501-1820, Distributed Bragg reflector (DBR), 021001 nanoscience & nanotechnology, Distributed Bragg reflector, Atomic and Molecular Physics, and Optics, Active layer, Power (physics), UV, resonant-cavity light-emitting diode (RCLED), AlGaN, Optoelectronics, 0210 nano-technology, business, lcsh:Optics. Light, Light-emitting diode
Abstract: International audience; We report on the realization and first demonstration of CW near-milliwatt-power emission at λ = 390 nm from resonant-cavity light-emitting diode (RCLED) on GaN templates. The vertical cavity consists of a bottom AlGaN/GaN distributed Bragg reflector and a top dielectric SiO2/ZrO2 mirror enclosing a GaInN/GaN multiple-quantum-well active layer. RCLEDs with total optical output of about 600 μW at an injection current of 20 mA were achieved before packaging, taking account of current growth and processing considerations. Dislocations generated during the growth of the RCLED structure seem to be affecting the mean light output. This can be further improved by the use of high-quality low-dislocation-density GaN templates or freestanding GaN substrates.
Published: 2013
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20. Nondestructive mapping of chemical composition and structural qualities of group III-nitride nanowires using submicron beam synchrotron-based X-ray diffraction

Author: P. L. Bonanno, W. H. Goh, Abderrahim Ramdane, L. Le Gratiet, J. Martin, Nabila Maloufi, M.B. Assouar, Simon Gautier, Alexander Kazimirov, Andrei Sirenko, Y. El Gmili, Anthony Martinez, Z.-H. Cai, Tarik Moudakir, Abdallah Ougazzaden, Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), New Jersey Institute of Technology [Newark] (NJIT), Cornell University [New York], Advanced Photon Source [ANL] (APS), Argonne National Laboratory [Lemont] (ANL)-University of Chicago-US Department of Energy, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Etude des Microstructures et de Mécanique des Matériaux (LEM3), Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS)-Arts et Métiers Sciences et Technologies, HESAM Université (HESAM)-HESAM Université (HESAM), Institut Jean Lamour (IJL), and Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Diffraction, Materials science, Analytical chemistry, Nanowire, Cathodoluminescence, 02 engineering and technology, Nitride, 01 natural sciences, law.invention, [SPI.MAT]Engineering Sciences [physics]/Materials, law, 0103 physical sciences, Microscopy, Scanning transmission electron microscopy, Materials Chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, [SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], business.industry, Metals and Alloys, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Synchrotron, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Transmission electron microscopy, Optoelectronics, 0210 nano-technology, business
Abstract: Symposium W on Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III / Spring Meeting of the European-Materials-Research-Society (E-MRS), Strasbourg, FRANCE, MAY 14-18, 2012; International audience; Submicron beam synchrotron-based X-ray diffraction (XRD) techniques have been developed and used to accurately and nondestructively map chemical composition and material quality of selectively grown group nanowires. GaN, AlGaN, and InGaN multi-quantum-well nanowires have been selectively grown on lattice matched and mismatched substrates, and the challenges associated with obtaining and interpreting submicron beam XRD results are addressed and solved. Nanoscale cathodoluminescence is used to examine exciton behavior, and energy-dispersive X-ray spectroscopy is used to verify chemical composition. Scanning transmission electron microscopy is later used to paint a more complete picture. The advantages of submicron beam XRD over other techniques are discussed in the context of this challenging material system.
Published: 2013
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21. Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

Author: V. E. Sandana, Philippe Bove, Y. El Gmili, Konstantinos Pantzas, Simon Gautier, Manijeh Razeghi, Tarik Moudakir, David Troadec, Gilles Patriarche, Suresh Sundaram, F. Hosseini Teherani, Paul L. Voss, Abdallah Ougazzaden, D. J. Rogers, T1, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL)-CentraleSupélec-Université de Lorraine (UL), Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Center for Quantum Devices [Evanston] (CQD), Northwestern University [Evanston], Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), and CentraleSupélec-Université de Lorraine (UL)
Subjects: 010302 applied physics, Soda-lime glass, Materials science, business.industry, Wafer bonding, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Inorganic Chemistry, 0103 physical sciences, Materials Chemistry, Sapphire, Optoelectronics, Wafer, Metalorganic vapour phase epitaxy, Thin film, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Wurtzite crystal structure
Abstract: GaN thin films were grown on ZnO/c-Al 2 O 3 with excellent uniformity over 2 in. diameter wafers using a low temperature/pressure MOVPE process with N 2 as a carrier and dimethylhydrazine as an N source. 5 mm×5 mm sections of similar GaN layers were direct-fusion-bonded onto soda lime glass substrates after chemical lift-off from the sapphire substrates. X-Ray Diffraction, Scanning Electron Microscopy and Transmission Electron Microscopy confirmed the bonding of crack-free wurtzite GaN films onto a glass substrate with a very good quality of interface, i.e. continuous/uniform adherence and absence of voids or particle inclusions. Using this approach, (In) GaN based devices can be lifted-off expensive single crystal substrates and bonded onto supports with a better cost-performance profile. Moreover, the approach offers the possibility of reclaiming the expensive sapphire substrate so it can be utilized again for growth.
Published: 2013
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22. Comparison of chemical and laser lift-off for the transfer of InGaN-based p-i-n junctions from sapphire to glass substrates

Author: Tarik Moudakir, V. E. Sandana, F. Hosseini Teherani, Simon Gautier, Konstantinos Pantzas, Manijeh Razeghi, Gilles Patriarche, Philippe Bove, Abdallah Ougazzaden, G. Orsal, Ryan McClintock, and D. J. Rogers
Subjects: Soda-lime glass, Materials science, Wafer bonding, business.industry, chemistry.chemical_element, Gallium nitride, Indium gallium nitride, chemistry.chemical_compound, Semiconductor, chemistry, Sapphire, Optoelectronics, Surface layer, business, Indium
Abstract: InGaN-based p-i-n structures were transferred from sapphire to soda-lime glass substrates using two approaches: (1) laser-lift-off (LLO) and thermo-metallic bonding and (2) chemical lift-off (LLO) by means sacrificial ZnO templates and direct wafer bonding. Both processes were found to function at RT and allow reclaim of the expensive single crystal substrate. Both approaches have also already been demonstrated to work for the wafer-scale transfer of III/V semiconductors. Compared with the industry-standard LLO, the CLO offers the added advantages of a lattice match to InGaN with higher indium contents, no need for an interfacial adhesive layer (which facilitates electrical, optical and thermal coupling), no damaged/contaminated GaN surface layer, simplified sapphire reclaim (GaN residue after LLO may complicate reclaim) and cost savings linked to elimination of the expensive LLO process.
Published: 2013
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23. Characteristics of the surface microstructures in thick InGaN layers on GaN

Author: David Troadec, G. Orsal, Abdallah Ougazzaden, Ali Ahaitouf, Tarik Moudakir, Simon Gautier, Gilles Patriarche, Y. El Gmili, Jean-Paul Salvestrini, Konstantinos Pantzas, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), ANR-12-PRGE-0014,NOVAGAINS,Nouvelles cellules photovoltaïques tandem à base de nitrures d'indium et de gallium sur oxyde de zinc sur silicium(2012), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)
Subjects: 010302 applied physics, X-ray spectroscopy, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, Scanning electron microscope, business.industry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Microstructure, 01 natural sciences, Electronic, Optical and Magnetic Materials, chemistry, 0103 physical sciences, X-ray crystallography, Optoelectronics, 0210 nano-technology, business, Luminescence, Layer (electronics), Indium, Visible spectrum
Abstract: International audience; This paper focuses on a comparative study of optical, morphological, microstructural and microcompositional properties of typical InGaN samples which exhibit V-defects but also two additional surface defects features, referred to as inclusion#1 (Ic1) and inclusion#2 (Ic2). HR-XRD, AFM, SEM, STEM and EDX are used to characterize such defects. Furthermore, hyperspectral mapping, spot mode and depth-resolved CL measurements provided useful informations on the optical emission properties and microstructure. The main characteristic of Ic1 luminescence peak is a decrease in intensity and no obvious shift in the CL peak position when going from the outside to the middle of such defect. More interesting was Ic2 which is shown to be local 3D top surface In-rich InGaN domains embedded in an homogeneous InGaN matrix. In fact, this study pointed out that close to the interface GaN/InGaN, it exists a 30 nm thick fully strained InGaN layer with constant indium incorporation. As the growth proceeds spatial fluctuation of the In content is observed and local In-rich 3D domains are shown to emerge systematically around threading dislocations terminations.
Published: 2013
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24. Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells

Author: Z. Djebbour, Simon Gautier, Konstantinos Pantzas, Anne Migan-Dubois, Tarik Moudakir, S. Suresh, Abdallah Ougazzaden, V. Gorge, Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ), Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Université de Lorraine (UL)-CentraleSupélec, UMI GT CNRS, and Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Gaussian, 02 engineering and technology, Classification of discontinuities, 01 natural sciences, 7. Clean energy, Standard deviation, law.invention, symbols.namesake, Position (vector), law, 0103 physical sciences, Solar cell, General Materials Science, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], InGaN, business.industry, Graded bandgap, Mechanical Engineering, Photovoltaic system, Modeling, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Mechanics of Materials, symbols, Optoelectronics, Defect, 0210 nano-technology, business, Layer (electronics), Voltage
Abstract: International audience; In this paper, we have used simulations to evaluate the impact of the distribution of electrically active defects on the photovoltaic performances of InGaN-based solar cell. The simulations were carried out using Silvaco's ATLAS software. We have modeled a P-GaN/Grad-InGaN/i-In0.53Ga0.47N/Grad-InGaN/N-ZnO where Grad-InGaN corresponds to an InGaN layer with a graded composition. This layer is inserted to eliminate the band discontinuities at the interface between InGaN and the GaN and ZnO layers. The defects were modeled through the introduction of band tails and a Gaussian distribution of defects in i-InGaN material. We have evaluated the influence of band tail widths as well as the parameters of the Gaussian distribution (i.e. defect density, mean position and standard deviation) on the short-circuit current, the open-circuit voltage and the fill-factor (efficiency) of the solar cell. These results have allowed us to identify key structural parameters useful for the optimization of InGaN solar cells, as well as to give realistic estimates of the performances of such cells.
Published: 2013
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25. Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer

Author: Manijeh Razeghi, Tarik Moudakir, Ferechteh H. Teherani, Suresh Sundaram, Matthew R. Phillips, Kevin Alan Prior, V. E. Sandana, Simon Gautier, D. J. Rogers, Liangchen Zhu, Philippe Bove, Akhil Rajan, Cuong Ton-That, Youssef El-Gmili, Ryan McClintock, Zakaria Djebbour, Abdallah Ougazzaden, Heriot-Watt University [Edinburgh] (HWU), Nanovation SARL (Nanovation), Nanovation SARL, University of Technology Sydney (UTS), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ), Northwestern University [Evanston], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)
Subjects: Materials science, Acoustics and Ultrasonics, Scanning electron microscope, Cathodoluminescence, Gallium nitride, 02 engineering and technology, Nitride, Epitaxy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, chemistry.chemical_compound, 0103 physical sciences, Wafer, ComputingMilieux_MISCELLANEOUS, Applied Physics, [PHYS]Physics [physics], 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Sapphire, Optoelectronics, 0210 nano-technology, business, Luminescence
Abstract: © 2016 IOP Publishing Ltd. Full 2 inch GaN epilayers were lifted off GaN and c-sapphire substrates by preferential chemical dissolution of sacrificial ZnO underlayers. Modification of the standard epitaxial lift-off (ELO) process by supporting the wax host with a glass substrate proved key in enabling full wafer scale-up. Scanning electron microscopy and x-ray diffraction confirmed that intact epitaxial GaN had been transferred to the glass host. Depth-resolved cathodoluminescence (CL) analysis of the bottom surface of the lifted-off GaN layer revealed strong near-band-edge (3.33 eV) emission indicating a superior optical quality for the GaN which was lifted off the GaN substrate. This modified ELO approach demonstrates that previous theories proposing that wax host curling was necessary to keep the ELO etch channel open do not apply to the GaN/ZnO system. The unprecedented full wafer transfer of epitaxial GaN to an alternative support by ELO offers the perspective of accelerating industrial adoption of the expensive GaN substrate through cost-reducing recycling.
Published: 2016
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26. Asymmetrical Design of AlGaN/GaN Distributed Bragg Reflectors for Near-UV Optoelectronic Applications

Author: Tarik Moudakir, Simon Gautier, Joel Jacquet, G. Orsa, Etienne Demarly, M. Abid, B.-T. Doan, Frédéric Genty, Abdallah Ougazzaden, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), and OPTEL - Equipe Optique et électronique pour les télécoms
Subjects: Health (social science), Materials science, General Computer Science, 010308 nuclear & particles physics, business.industry, General Mathematics, General Engineering, Algan gan, 01 natural sciences, Education, General Energy, 0103 physical sciences, Optoelectronics, business, General Environmental Science
Abstract: International audience; AlGaN/GaN materials family is one of the best solution to achieve near-UV high reflective Bragg mirrors on GaN substrates. However, the large lattice mismatch occuring between AlGaN and GaN can lead to relaxed structures by the way of cracks which affect the DBR performances. In this work, asymmetrical designs were investigated for the modeling of fully-strained AlGaN/GaN distributed Bragg Reflectors. Such designs should allow to obtain stacks with crack-free surfaces well-adapted for the regrowth of efficient additional monocrystalline layers. First, the critical thickness of MOVPE-grown AlGaN on GaN templates was experimentally determined and modeled. Then, several AlGaN/GaN mirrors with various Al molar fractions and asymmetry factors were simulated demonstrating that non relaxed DBRs could be obtained with adequate parameters. Finally, it has also been shown that there is a best suited Al molar fraction in AlGaN for each DBR centering wavelength.
Published: 2012
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27. Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire

Author: Tarik Moudakir, Ryan McClintock, D. J. Rogers, Philippe Bove, F. Hosseini Teherani, I. A. Davidson, V. E. Sandana, H.-J. Drouhin, Manijeh Razeghi, Simon Gautier, L. Goubert, Abdallah Ougazzaden, Kevin Alan Prior, and Ali Ahaitouf
Subjects: Soda-lime glass, Materials science, Scanning electron microscope, business.industry, Gallium nitride, Direct bonding, Indium gallium nitride, Epitaxy, chemistry.chemical_compound, chemistry, Sapphire, Optoelectronics, business, Wurtzite crystal structure
Abstract: GaN was grown on ZnO-buffered c-sapphire (c-Al2O3) substrates by Metal Organic Vapor Phase Epitaxy. The ZnO then served as a sacrificial release layer, allowing chemical lift-off of the GaN from the c-Al2O3 substrate via selective wet etching of the ZnO. The GaN was subsequently direct-wafer-bonded onto a glass substrate. X-Ray Diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray microanalysis, Room Temperature Photoluminescence & optical microscopy confirmed bonding of several mm2 of crack-free wurtzite GaN films onto a soda lime glass microscope slide with no obvious deterioration of the GaN morphology. Using such an approach, InGaN based devices can be lifted-off expensive single crystal substrates and bonded onto supports with a better cost-performance profile. Moreover, the approach offers the possibility of reclaiming and reusing the substrate.
Published: 2012
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28. Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices

Author: Simon Gautier, Badreddine Assouar, Abdallah Ougazzaden, Tarik Moudakir, Hussein Srour, Jean-Paul Salvestrini, Ali Ahaitouf, T1, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Laboratoire de physique des milieux ionisés et applications (LPMIA), and Université Henri Poincaré - Nancy 1 (UHP)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Photodetector, Optical power, Gallium nitride, 02 engineering and technology, medicine.disease_cause, 01 natural sciences, 7. Clean energy, chemistry.chemical_compound, Optics, 0103 physical sciences, medicine, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Nanosecond, 021001 nanoscience & nanotechnology, Cutoff frequency, Semiconductor, chemistry, Optoelectronics, 0210 nano-technology, business, Ultraviolet, Dark current
Abstract: Metal-semiconductor-metal solar blind ultraviolet photodetectors have been fabricated using both BGaN-GaN and BGaN-AlN superlattices as active layers. A high internal gain (up to 3 × 10 4 for optical power in the nW range) is obtained with a highly reduced dark current thanks to the boron incorporation. In the high optical power regime (W range), the time response is in the nanosecond range, which is much smaller than that of GaNand ZnO-based ultraviolet photodetectors. Moreover, the boron incorporation in GaN material allows the tuning of the cutoff wavelength.
Published: 2012

29. A study of BGaN back-barriers for AlGaN/GaN HEMTs

Author: Paul L. Voss, Vinod Ravindran, Abdallah Ougazzaden, Tarik Moudakir, Jeramy Dickerson, Simon Gautier, UMI GT CNRS, and Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, [PHYS]Physics [physics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, business.industry, Transistor, Algan gan, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Polarization (waves), 01 natural sciences, Buffer (optical fiber), Electronic, Optical and Magnetic Materials, law.invention, law, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Fermi gas, Instrumentation, ComputingMilieux_MISCELLANEOUS
Abstract: We study the use of a BGaN back-barrier layer in the GaN buffer of Al y Ga1 −y N/GaN highelectron mobility transistors to improve confinement of carriers in the 2D electron gas region. Unlike InGaN back-barrier designs, whose polarization-induced sheet charges form an electrostatic barrier at the backbarrier/ buffer interface, BGaN back-barrier designs create an electrostatic barrier at the channel/backbarrier interface. This can result in carrier confinement to sub-15 nm thickness, even when the channel is 30 nm wide. Although polarization sheet charges due to the BGaN back-barrier form a secondary well at the back-barrier/buffer interface, increasing the thickness of the back-barrier may move the secondary well so that it no longer interacts with the primary channel.
Published: 2012
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30. Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy

Author: Gilles Patriarche, Konstantinos Pantzas, Paul L. Voss, Abdallah Ougazzaden, Olivia Mauguin, S. Suresh, Tarik Moudakir, Ludovic Largeau, David Troadec, Simon Gautier, Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: Materials science, Energy-dispersive X-ray spectroscopy, chemistry.chemical_element, Bioengineering, 02 engineering and technology, Epitaxy, 01 natural sciences, Optics, 0103 physical sciences, Scanning transmission electron microscopy, General Materials Science, Electrical and Electronic Engineering, Spectroscopy, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Elastic scattering, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Mechanical Engineering, Resolution (electron density), General Chemistry, 021001 nanoscience & nanotechnology, Dark field microscopy, chemistry, Mechanics of Materials, Optoelectronics, 0210 nano-technology, business, Indium
Abstract: International audience; Using elastic scattering theory we show that a small set of energy dispersive x-ray spectroscopy (EDX) measurements is sufficient to experimentally evaluate the scattering function of electrons in high-angle annular dark field scanning transmission microscopy (HAADF-STEM). We then demonstrate how to use this function to transform qualitative HAADF-STEM images of InGaN layers into precise, quantitative chemical maps of the indium composition. The maps obtained in this way combine the resolution of HAADF-STEM and the chemical precision of EDX. We illustrate the potential of such chemical maps by using them to investigate nanometer-scale fluctuations in the indium composition and their impact on the growth of epitaxial InGaN layers.
Published: 2012
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31. Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Author: M. Boucherit, Vinod Ravindran, Jean-Claude De Jaeger, Simon Gautier, Jeramy Dickerson, Abdallah Ougazzaden, Tarik Moudakir, Paul L. Voss, Ali Soltani, Marie-Antoinette di Forte-Poisson, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Georgia Institute of Technology [Atlanta], Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Alcatel-Thales III-V Lab (III-V Lab ), and THALES [France]
Subjects: 010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), business.industry, Transistor, Wide-bandgap semiconductor, Heterojunction, 02 engineering and technology, Trapping, Electron, Nitride, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Fermi gas, Leakage (electronics)
Abstract: International audience; A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects: a polarization-induced band discontinuity and a resistive barrier originating from excellent insulation properties of BGaN. Compared to conventional AlGaN/GaN HEMTs, structures grown with BGaN back-barrier showed a significant improvement of static performances, transport properties, and trapping effects involving a limited current collapse in dynamic regime. A DC maximum current increase of 58.7% was observed
Published: 2012
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32. Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE

Author: Simon Gautier, Konstantinos Pantzas, Gilles Patriarche, Jeramy Dickerson, Olivia Mauguin, Y. El Gmili, Christian Tanguy, S. Suresh, Ali Ahaitouf, Abdallah Ougazzaden, Tarik Moudakir, T. Rivera, Chris Bishop, Paul L. Voss, Ludovic Largeau, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), T1, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL)-CentraleSupélec-Université de Lorraine (UL), and Université de Lorraine (UL)-CentraleSupélec-Université de Lorraine (UL)-CentraleSupélec
Subjects: 010302 applied physics, Diffraction, Photoluminescence, Materials science, business.industry, Cathodoluminescence, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Inorganic Chemistry, 0103 physical sciences, Materials Chemistry, Optoelectronics, Metalorganic vapour phase epitaxy, Single phase, 0210 nano-technology, Absorption (electromagnetic radiation), business, Quantum tunnelling, ComputingMilieux_MISCELLANEOUS
Abstract: In this paper we demonstrate a solution to systematically obtain thick, single phase InGaN epilayers by MOVPE. The solution consists in periodically inserting ultra-thin GaN interlayers during InGaN growth. Measurements by HAADF-STEM, X-ray diffraction, cathodoluminescence and photoluminescence demonstrate the effective suppression of the three-dimensional sublayer that is shown to spontaneously form in control InGaN epilayers grown without this method. Simulation predicts that tunneling through the GaN barriers is efficient and that carrier transport through this semi-bulk InGaN/GaN structure is similar to that of bulk InGaN. Such structures may be useful for improving the efficiency of InGaN solar cells by allowing thicker, higher quality InGaN absorption layers.
Published: 2012
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33. Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films

Author: Christelle Pareige, Konstantinos Pantzas, G. Orsal, Abdallah Ougazzaden, Tarik Moudakir, Christophe Longeaud, Paul L. Voss, Vanessa Gorge, Simon Gautier, Z. Djebbour, Anne Migan-Dubois, SCM - Equipe Semiconducteurs en Couches Minces, Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), T1, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-CentraleSupélec-Georgia Institute of Technology [Lorraine, France]-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Ecole Nationale Supérieure des Arts et Metiers Metz-Université de Franche-Comté (UFC)
Subjects: 010302 applied physics, [PHYS]Physics [physics], Materials science, Physics and Astronomy (miscellaneous), Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Crystal, Absorbance, symbols.namesake, Crystallography, chemistry, Phase (matter), 0103 physical sciences, X-ray crystallography, symbols, Metalorganic vapour phase epitaxy, Thin film, 0210 nano-technology, Raman spectroscopy, Indium, ComputingMilieux_MISCELLANEOUS
Abstract: LGEP 2011 ID = 751; International audience; We report on the crystal quality of metalorganic vapour phase epitaxy-grown InGaN with indium content ranging from 0% to 20%. Absorbance measurements are fit to a model including band tails and a defect represented as a Brendel oscillator (R. Brendel, Appl. Phys. A 50, 587, 1990). Band tail absorbance, corresponding to contorted bonds, increases with increased In content. Above 10% of In, the presence of another defect, the concentration of which increases with In content, has been correlated with x-ray diffraction and Raman. We suggest that this defect corresponds to nitrogen vacancies, in agreement with a reported model for GaN.
Published: 2011
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34. Application of dilute boron B(Al,In,Ga)N alloys for UV light sources

Author: G. Orsal, F. Jomard, A. En Naciri, Konstantinos Pantzas, M. Abid, Simon Gautier, D. J. Rogers, Abdallah Ougazzaden, Tarik Moudakir, F. Hosseini Teherani, and Paul L. Voss
Subjects: Materials science, Silicon, business.industry, chemistry.chemical_element, Bragg's law, Gallium nitride, Epitaxy, chemistry.chemical_compound, Optics, chemistry, Ellipsometry, Refractive index contrast, Optoelectronics, Metalorganic vapour phase epitaxy, business, Boron
Abstract: In the last decades, development of the (Al,Ga,In)N materials has led to new generations of opto- and micro-electronic devices. More recently, novel B(Al,Ga,In)N alloys have been proposed for optical applications in the UV range. Since material containing boron possesses unique properties, the B(Al,Ga,In)N materials system is expected to permit the design of improved and/or novel devices. To evaluate this potential, an improved knowledge of the physical properties of these new materials will be required, however. In this work, investigation of optical, structural, and compositional properties of low-boron content BGaN and BAlN ternary and BInGaN quaternary materials grown through Metalorganic Vapor Phase Epitaxy (MOVPE) are presented. It is shown that inclusion of a small amount of boron strongly affects the optical properties allowing the fabrication of BGaN-based Distributed Bragg Reflectors (DBRs) or Distributed Bragg Confinement layers (DBCs) with large refractive index contrast. Indeed, 1% of boron in BGaN/GaN multilayer structures gives a refractive index contrast of more than 0.1, which is equivalent to that of AlGaN/GaN containing 22% aluminum. The potential of boron-based material technology is illustrated for visible range solar cells applications through the example of BInGaN with good crystalline quality grown on ZnO buffered silicon substrates. It was found that through boron introduction, reduced lattice mismatch, and thus reduced tensile strain, could be obtained for high In contents.
Published: 2011
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35. Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices

Author: Badreddine Assouar, Simon Gautier, J.P. Salvestrini, Sidi Ould Saad Hamady, Abdallah Ougazzaden, Tarik Moudakir, Hussein Srour, Ali Ahaitouf, Mustapha Abarkan, Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Laboratoire de Microbiologie Marine, Université de la Méditerranée - Aix-Marseille 2-Centre National de la Recherche Scientifique (CNRS), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Signaux Systèmes et Composants, Sidi Mohammed Ben Abdellah University, Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), and Université Sidi Mohamed Ben Abdellah (USMBA)
Subjects: 010302 applied physics, [PHYS]Physics [physics], Materials science, Physics and Astronomy (miscellaneous), business.industry, Schottky effect, Wide-bandgap semiconductor, Photodetector, Schottky diode, Optical power, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, Cutoff frequency, Active layer, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Dark current
Abstract: International audience; Large internal gains that can be obtained in wide band gap semiconductors-based (GaN and ZnO types) Schottky and/or metal-semiconductor-metal photodetectors are generally accompanied by large dark current and time response. We show that, using quasi-alloy of BGaN/GaN superlattices as the active layer, the dark current can be lowered while maintaining high internal gain (up to 3 x 10(4)) for optical power in the nW range and low time response (few tens of ns) for optical power in the W range. Furthermore, the boron incorporation allows the tuning of the cutoff wavelength
Published: 2011
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36. Blue-violet boron-based Distributed Bragg Reflectors for VCSEL application

Author: Tarik Moudakir, M. Abid, G. Orsal, Anne Migan-Dubois, Abdallah Ougazzaden, Zakaria Djebbour, A. En Naciri, Simon Gautier, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), SCM - Equipe Semiconducteurs en Couches Minces, Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), and Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, Materials science, business.industry, Band gap, chemistry.chemical_element, Gallium nitride, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Distributed Bragg reflector, 01 natural sciences, Vertical-cavity surface-emitting laser, Semiconductor laser theory, Inorganic Chemistry, chemistry.chemical_compound, Optics, chemistry, 0103 physical sciences, Materials Chemistry, Refractive index contrast, Optoelectronics, 0210 nano-technology, business, Boron, Refractive index
Abstract: LGEP 2011 ID = 754; International audience; BxGa1−xN layers as well as BxGa1−xN/GaN Distributed Bragg Reflector (DBR) structures were grown, for boron compositions between 0% and 1.3%, by Metal-Organic Vapour Phase Epitaxy. Refractive index, absorption coefficient and bandgap bowing of BxGa1−xN are extracted from a two-stage procedure based on spectroscopic ellipsometry and reflection measurements in the 250-850 nm range at room temperature. For all compositions of our BGaN alloys, we have obtained good agreement between experimental and simulated curves. It is shown that a large refractive index contrast between BGaN and GaN can be achieved for only 1% of boron. Moreover, the lattice mismatch between B0.01Ga0.99N and GaN is only 0.2%, which can lead to good structural quality of BGaN/GaN DBRs. Those properties can enable the development of innovative BGaN DBR technologies for Vertical Cavity Surface Emitting Lasers (VCSELs) in the blue-violet spectral range.
Published: 2011
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37. Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates

Author: V. E. Sandana, Damien McGrouther, D. J. Rogers, Simon Gautier, François Jomard, Michael Molinari, Michel Troyon, Paul L. Voss, J. N. Chapman, G. Orsal, M. Abid, Tarik Moudakir, F. Hosseini Teherani, Abdallah Ougazzaden, Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Nanovation SARL, Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Microscopies et d'Etude de Nanostructures (lmen), Université de Reims Champagne-Ardenne (URCA), Department of Physics and Astronomy [Glasgow], UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Nanovation SARL (Nanovation), Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), and Salvestrini, Jean Paul
Subjects: [PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], Indium nitride, Analytical chemistry, Cathodoluminescence, Gallium nitride, 02 engineering and technology, 010402 general chemistry, Epitaxy, Indium gallium nitride, 01 natural sciences, chemistry.chemical_compound, lift-off, Metalorganic vapour phase epitaxy, pulsed laser deposition, ComputingMilieux_MISCELLANEOUS, Wurtzite crystal structure, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], InGaN, Si substrate, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Secondary ion mass spectrometry, chemistry, metalorganic vapour phase epitaxy, ZnO, 0210 nano-technology
Abstract: International audience; InGaN/GaN layers were grown on ZnO-buffered Si (111) substrates by metalorganic vapour phase epitaxy (MOVPE). The dissociation of ZnO observed during conventional MOVPE growth of InGaN/GaN was combated through the use of a low pressure/temperature MOVPE approach with N2 as a carrier gas and dimethylhydrazine added to the ammonia (nitrogen precursor) in order to enhance the concentration of atomic nitrogen at relatively low temperature. Electron Microscopy of cross-sections, High Resolution X-Ray Diffraction (HR-XRD), secondary ion mass spectroscopy and cathodoluminescence studies suggested that single phase wurtzite InGaN layers with between about 17.5 and 21.5% indium were grown epitaxially, with no evidence of back-etching of the ZnO templates. HR-XRD revealed highly pronounced c-axis texture for both the InGaN/GaN and ZnO. Immersion in dilute nitric acid dissolved the ZnO such that the InGaN/GaN could be lifted-off from the substrate.
Published: 2010
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38. Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content

Author: Nabila Maloufi, Konstantinos Pantzas, Ian T. Ferguson, M. Abid, G. Orsal, Simon Gautier, Andrei Sirenko, Paul L. Voss, M. Alnot, Abdallah Ougazzaden, Tarik Moudakir, F. Jomard, Zakaria Djebbour, Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Georgia Tech Lorraine [Metz], Centre National de la Recherche Scientifique (CNRS)-CentraleSupélec-Georgia Institute of Technology [Lorraine, France]-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Ecole Nationale Supérieure des Arts et Metiers Metz-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ), UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'étude des textures et application aux matériaux (LETAM), Université Paul Verlaine - Metz (UPVM)-Centre National de la Recherche Scientifique (CNRS), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des matériaux (LPM), and Université Henri Poincaré - Nancy 1 (UHP)-Institut National Polytechnique de Lorraine (INPL)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Indium nitride, Analytical chemistry, chemistry.chemical_element, Gallium nitride, 02 engineering and technology, Epitaxy, 01 natural sciences, Inorganic Chemistry, chemistry.chemical_compound, X-ray photoelectron spectroscopy, 0103 physical sciences, Materials Chemistry, BInGaN, Metalorganic vapour phase epitaxy, Boron, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], InGaN, ComputerSystemsOrganization_COMPUTER-COMMUNICATIONNETWORKS, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Metal-organic vapour phase epitaxy, Secondary ion mass spectrometry, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], InformationSystems_MISCELLANEOUS, 0210 nano-technology, Indium
Abstract: LGEP 2010 ID = 608; International audience; BInGaN quaternary alloys with up to 2% boron and 14% of indium have been grown on GaN/sapphire template substrates by metal-organic vapour phase epitaxy (MOVPE). Epitaxial layer composition was determined by secondary ion mass spectroscopy (SIMS), and confirmed by X-ray photoelectron spectroscopy (XPS). Bandgap energies were measured using optical transmission and reflection spectroscopy. We find that boron incorporation in BInGaN reduces the bandgap, causing an effect similar to the increase of indium content in InGaN. However, adding boron has the advantage of decreasing the lattice mismatch with conventional GaN substrates.
Published: 2010
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39. Deep structural analysis of novel BGaN material layers grown by MOVPE

Author: Simon Gautier, Gilles Patriarche, Konstantinos Pantzas, Tarik Moudakir, Ali Soltani, David Troadec, M. Abid, G. Orsal, Ludovic Largeau, Abdallah Ougazzaden, Olivia Mauguin, Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Laboratoire de Photonique et Nanostructure, CNRS, Route de Nozay, 91460 Marcoussis, France, SUPELEC-Campus Metz, Ecole Supérieure d'Electricité - SUPELEC (FRANCE), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), UMI GT CNRS, and Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Photoluminescence, Materials science, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Inorganic Chemistry, chemistry, 0103 physical sciences, Scanning transmission electron microscopy, Materials Chemistry, Sapphire, Metalorganic vapour phase epitaxy, 0210 nano-technology, Boron, Ternary operation, Group 2 organometallic chemistry, Wurtzite crystal structure
Abstract: International audience; BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at room temperature was measured. At higher boron content, cubic BGaN nano-sized clusters were identified. The clusters are 3 nm wide, homogeneously distributed in size and in density and coherent with the surrounding wurtzite BGaN matrix. Their boron composition was estimated by EDX.
Published: 2010
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40. Electrical and structural characterizations of BGaN thin films grown by metal‐organic vapor‐phase epitaxy

Author: Boumediene Benyoucef, Simon Gautier, T. Baghdadli, S. Ould Saad Hamady, Abdallah Ougazzaden, and Tarik Moudakir
Subjects: 010302 applied physics, Materials science, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, symbols.namesake, Van der Pauw method, chemistry, Hall effect, Electrical resistivity and conductivity, 0103 physical sciences, symbols, Thin film, 0210 nano-technology, Raman spectroscopy, Boron, Ohmic contact
Abstract: In this report, the electrical and structural properties of BGaN thin films, with boron composition up to 2%, have been investigated. The resistivity, Hall mobility and carrier concentration were measured by the van der Pauw/Hall Effect technique, using annealed indium ohmic contacts. The current-voltage measurements between two planar gold and titanium/aluminum electrodes were performed. To analyze the structural properties, the polarized Raman spectra were measured with a micro-Raman spectrometer. The resistivity displays a strong increase with respect to the boron composition in BGaN alloy, directly related to the decrease of the n-type carrier concentration, while the mobility increases with boron content, well correlated to the structural measurements showing a good crystalline quality of the BGaN layers. This boron-controlled resistivity is very promising for using the BGaN based materials in microelectronic and optoelectronic devices. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Published: 2009
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41. Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates

Author: Olivier Durand, Alain Lusson, Jérôme Martin, Tarik Moudakir, Damien McGrouther, F. Hosseini Teherani, G. Garry, J. N. Chapman, T. Aggerstam, Abdallah Ougazzaden, D. J. Rogers, Zakaria Djebbour, Simon Gautier, S. Ould Saad, Laboratoire de génie électrique de Paris (LGEP), and Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, Fabrication, Materials science, business.industry, Gallium nitride, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Inorganic Chemistry, chemistry.chemical_compound, Optics, chemistry, 0103 physical sciences, Materials Chemistry, Sapphire, Optoelectronics, Metalorganic vapour phase epitaxy, Thin film, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Wurtzite crystal structure
Abstract: The materials quality and availability of large-area bulk GaN substrates is currently considered a key problem for the continuing development of improved GaN-based devices. Since industrial fabrication of bulk GaN substrates with suitable materials quality has proven very difficult, the opto-GaN industry is currently based on heteroepitaxy using either c-sapphire or 6H SiC substrates. ZnO is promising as a substrate material for GaN because it has the same wurtzite structure and a relatively small lattice mismatch (∼1.8%). In this study, we have successfully grown GaN by MOVPE on ZnO-buffered c-sapphire. The growth conditions required to both prevent ZnO degradation and grow monocrystal thin film of GaN have been obtained. SEM, HRXRD and micro-Raman characterizations underlined the presence of the two layers GaN and ZnO with high structural quality.
Published: 2008

42. AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm

Author: Paul L. Voss, Frédéric Genty, Tarik Moudakir, J.P. Salvestrini, François Réveret, Y. El Gmili, Suresh Sundaram, G. Le Gac, Sophie Bouchoule, Abdallah Ougazzaden, Xiaogai Li, Pierre Disseix, Gilles Patriarche, Russell D. Dupuis, Joël Leymarie, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire des sciences et matériaux pour l'électronique et d'automatique (LASMEA), Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-Centre National de la Recherche Scientifique (CNRS), Génétique, génomique fonctionnelle et biotechnologies (UMR 1078) (GGB), Institut Brestois Santé Agro Matière (IBSAM), Université de Brest (UBO)-Université de Brest (UBO)-EFS-Institut National de la Santé et de la Recherche Médicale (INSERM), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), ANR-11-BS03-0012,VESUVE,LASER A CAVITE VERTICALE EMETTANT PAR LA SURFACE DANS LA GAMME DE L'ULTRA-VIOLET(2011), Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), EFS-Université de Brest (UBO)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut Brestois Santé Agro Matière (IBSAM), and Université de Brest (UBO)
Subjects: 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, business.industry, Scanning electron microscope, Oscillator strength, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, symbols.namesake, Stark effect, law, 0103 physical sciences, Scanning transmission electron microscopy, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], symbols, Optoelectronics, 0210 nano-technology, business, Spectroscopy, Quantum well, Light-emitting diode
Abstract: International audience; We report on the growth of Al 0.57 Ga 0.43 N/Al 0.38 Ga 0.63 N MQWs grown on a relaxed Al 0.58 Ga 0.42 N buffer on AlN template by Metal Organic Vapor Phase Epitaxy. The MQW structure is designed so that the strain in the quantum wells induced by their lattice mismatch with barriers is sufficient to enhance TE polarized emission (E-field ⊥ c). A 630-nm thick relaxed Al 0.58 Ga 0.42 N buffer grown on AlN template serves as a pseudo-substrate to release the strain in the barriers and to avoid related defects or composition fluctuation in the active region. Thin (< 2 nm) quantum wells allow preservation of the overlapping of electron and hole wavefunctions considering the strong quantum-confined Stark effect in AlGaN-based MQW structures. Scanning transmission electron microscopy (STEM) coupled to energy-dispersive X-ray spectroscopy (EDX) analysis is used to optimize the growth conditions and to determine the composition of wells and barriers. Optical characterizations of the grown structure reveal a well-defined band-edge emission peak at 285 nm. Based on macro-transmission measurements and simulations, the absorption coefficient of the wells is estimated to be 3 × 10 5 cm −1 (E-field ⊥ c), attesting that the oscillator strength is preserved for these AlGaN MQWs with high Al content, which is promising for efficient surface-emitting devices in the deep ultra-violet (DUV) region.
Published: 2015
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43. Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications

Author: Ludovic Largeau, Simon Gautier, Hee Jin Kim, Gilles Patriarche, M. Abid, A. En Naciri, Jae-Hyun Ryou, Russell D. Dupuis, Jean-Paul Salvestrini, Konstantinos Pantzas, François Jomard, G. Orsal, Z. Djebbour, David Alamarguy, Zachary Lochner, Tarik Moudakir, Abdallah Ougazzaden, Paul L. Voss, Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Laboratoire de Physique des Milieux Denses (LPMD), Université Paul Verlaine - Metz (UPVM), Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ), Center for Compound Semiconductors and School of Electrical and Computer Engineering, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des solides et de cristallogénèse (LPSC), and Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, Physics and Astronomy (miscellaneous), business.industry, High-refractive-index polymer, chemistry.chemical_element, Material system, 02 engineering and technology, Chemical vapor deposition, 021001 nanoscience & nanotechnology, medicine.disease_cause, 01 natural sciences, Reflectivity, Optics, chemistry, 0103 physical sciences, medicine, Optoelectronics, Metalorganic vapour phase epitaxy, 0210 nano-technology, business, Boron, Refractive index, Ultraviolet
Abstract: International audience; Highly reflective deep UV distributed Bragg reflectors (DBRs) based on the BAlN material system have been grown by metalorganic vapour phase epitaxy on AlN template substrates. These structures make use of the transparency of BAlN in the deep UV and the high refractive index contrast between BAlN and AlN, which has been demonstrated to exceed 0.27 at 280 nm. 18-pair BAlN/AlN DBRs showed experimental peak reflectivity of 82% at 311 nm and a stop-bandwidth of 20 nm. At 282 nm, a 24-pair BAlN/AlN DBR structure is demonstrated with experimental peak reflectivity of 60% and stop-bandwidth of 16 nm.
Published: 2012
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44. Microstructural compositional, and optical characterization of GaN grown by metal organic vapor phase epitaxy on ZnO epilayers

Author: Tarik Moudakir, Simon Gautier, F. Hosseini Teherani, Damien McGrouther, J. N. Chapman, François Jomard, D. J. Rogers, Michael Molinari, Abdallah Ougazzaden, Michel Troyon, and Manijeh Razeghi
Subjects: 010302 applied physics, Photoluminescence, Materials science, Wide-bandgap semiconductor, Analytical chemistry, Cathodoluminescence, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Transmission electron microscopy, Phase (matter), 0103 physical sciences, Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, 0210 nano-technology, Layer (electronics)
Abstract: This article presents the results of microstructural, compositional, and optical characterization of GaN films grown on ZnO buffered c-sapphire substrates. Transmission electron microscopy showed epitaxy between the GaN and the ZnO, no degradation of the ZnO buffer layer, and no evidence of any interfacial compounds. Secondary ion mass spectroscopy revealed negligible Zn signal in the GaN layer away from the GaN∕ZnO interface. After chemical removal of the ZnO, room temperature (RT) cathodoluminescence spectra had a single main peak centered at ∼368nm (∼3.37eV), which was indexed as near-band-edge (NBE) emission from the GaN layer. There was no evidence of the ZnO NBE peak, centered at ∼379nm (∼3.28eV), which had been observed in RT photoluminescence spectra prior to removal of the ZnO.
Published: 2009
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45. Bandgap bowing in BGaN thin films

Author: Simon Gautier, Z. Djebbour, Tarik Moudakir, Russell D. Dupuis, Zachary Lochner, Abdallah Ougazzaden, Seungkeun Choi, Hee Jin Kim, Andrei Sirenko, and Jae-Hyun Ryou
Subjects: Materials science, Photoluminescence, Physics and Astronomy (miscellaneous), business.industry, Band gap, Sapphire, Wide-bandgap semiconductor, Optoelectronics, Metalorganic vapour phase epitaxy, Chemical vapor deposition, Thin film, Epitaxy, business
Abstract: We report on the bandgap variation in thin films of BxGa1−xN grown on AlN/sapphire substrates using metal-organic vapor phase epitaxy. Optical transmission, photoluminescence, and x-ray diffraction were utilized to characterize the materials’ properties of the BxGa1−xN films. In contrast to the common expectation for the bandgap variation, which is based on the linear interpolation between the corresponding GaN and BN values, a significant bowing (C=9.2±0.5 eV) of the bandgap was observed. A decrease in the optical bandgap by 150 meV with respect to that of GaN was measured for the increase in the boron composition from 0% to 1.8%.
Published: 2008
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46. Use of PLD-grown moth-eye ZnO nanostructures as templates for MOVPE growth of InGaN-based photovoltaics

Author: V. E. Sandana, Damien McGrouther, H.-J. Drouhin, M.J. Soares, A.J. Neves, Marco Peres, Michael Molinari, D. J. Rogers, Teresa Monteiro, Abdallah Ougazzaden, G. Orsal, Michel Troyon, Tarik Moudakir, F. Hosseini Teherani, Manijeh Razeghi, Simon Gautier, and J. N. Chapman
Subjects: Materials science, Silicon, business.industry, Photovoltaic system, chemistry.chemical_element, Nanotechnology, Polymer solar cell, Amorphous solid, law.invention, Monocrystalline silicon, Solar cell efficiency, chemistry, Photovoltaics, Thin-film transistor, law, Solar cell, Optoelectronics, Direct and indirect band gaps, Metalorganic vapour phase epitaxy, Plasmonic solar cell, Crystalline silicon, Thin film, business, Order of magnitude, Visible spectrum
Abstract: ZnO is a remarkable, multifunctional, biocompatible material with a distinctive set of properties including a direct bandgap of ~3.4eV, high transparency over the visible spectrum, a very wide range of obtainable conductivities & a strong piezoelectric response. Thus ZnO has many established & emerging applications including varistors, transparent contacts, surface acoustic wave devices and transparent thin film transistors [1]. ZnO also exhibits one of the largest families of nanostructures of all materials systems and a capacity to crystallise readily on amorphous and/or mismatched substrates [2].

47. Modeling of N-i-P Vs. P-i-N InGaN Solar Cells with Ultrathin GaN Interlayers for Improved Performance

Author: Konstantinos Pantzas, Abdallah Ougazzaden, Tarik Moudakir, Jeramy Dickerson, and Paul L. Voss
Subjects: Photocurrent, Improved performance, Materials science, business.industry, Material quality, Electric field, Optoelectronics, Hybrid solar cell, Plasmonic solar cell, business, Polarization (waves)
Abstract: P-i-N structure solar cells often provide improved performance over N-i-P devices because acceptors are easier to activate when the p-type layer is close to the surface. However, for strained InGaN solar cells on GaN, the polarization-induced electric field creates a barrier for photocurrent that impedes device performance. In this paper we show that for Ga-face growth, N-i-P structures can provide improved performance because the electric field from the junction is parallel to that formed from polarization induced sheet charges. Thus the fields complement each other to assist in creating photocurrent in N-i-P devices. Additionally we simulate an N-i-P cell using the recently demonstrated insertion of ultra-thin GaN interlayers to achieve thick strained layers with high material quality.

48. New generation of distributed Bragg reflectors based on BAlN/AlN structures for deep UV-optoelectronic applications

Author: Gilles Patriarche, Tarik Moudakir, M. Abid, Russell D. Dupuis, Zachary Lochner, F. Jomard, Simon Gautier, Konstantinos Pantzas, Jae-Hyun Ryou, A. En Naciri, Abdallah Ougazzaden, G. Orsal, Zakaria Djebbour, Hee Jin Kim, and D. Alamarguy
Subjects: X-ray spectroscopy, Materials science, business.industry, Wide-bandgap semiconductor, Distributed Bragg reflector, Reflectivity, law.invention, Aluminum gallium nitride, Wavelength, Optics, law, Optoelectronics, business, Refractive index, Light-emitting diode
Abstract: We report innovative highly reflective DBR structures based on the novel material BAlN. An experimental BAlN/AlN DBRs demonstrated a reflectivity of 60% and 82% at wavelengths of 282 nm and 311nm respectively.

49. Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer.

Author: Akhil Rajan, David J Rogers, Cuong Ton-That, Liangchen Zhu, Matthew R Phillips, Suresh Sundaram, Simon Gautier, Tarik Moudakir, Youssef El-Gmili, Abdallah Ougazzaden, Vinod E Sandana, Ferechteh H Teherani, Philippe Bove, Kevin A Prior, Zakaria Djebbour, Ryan McClintock, and Manijeh Razeghi
Subjects: OPTOELECTRONICS, GALLIUM nitride films, SCANNING electron microscopy, CATHODOLUMINESCENCE, COST control
Abstract: Full 2 inch GaN epilayers were lifted off GaN and c-sapphire substrates by preferential chemical dissolution of sacrificial ZnO underlayers. Modification of the standard epitaxial lift-off (ELO) process by supporting the wax host with a glass substrate proved key in enabling full wafer scale-up. Scanning electron microscopy and x-ray diffraction confirmed that intact epitaxial GaN had been transferred to the glass host. Depth-resolved cathodoluminescence (CL) analysis of the bottom surface of the lifted-off GaN layer revealed strong near-band-edge (3.33 eV) emission indicating a superior optical quality for the GaN which was lifted off the GaN substrate. This modified ELO approach demonstrates that previous theories proposing that wax host curling was necessary to keep the ELO etch channel open do not apply to the GaN/ZnO system. The unprecedented full wafer transfer of epitaxial GaN to an alternative support by ELO offers the perspective of accelerating industrial adoption of the expensive GaN substrate through cost-reducing recycling. [ABSTRACT FROM AUTHOR]
Published: 2016
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