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2. Erratum: “Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes” [AIP Adv. 11, 065315 (2021)]

3. Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes

4. Void engineering in epitaxially regrown GaAs-based photonic crystal surface emitting lasers by grating profile design

11. Epitaxially Regrown GaAs-Based Photonic Crystal Surface-Emitting Laser.

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