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Given the transition to entrepreneurial universities, there is a tendency to increase patenting, although without a deep study of the commercial potential. Therefore, the percentage of those developments that succeed is very low. The objective of this research was to develop a strategy for the technological and commercial evaluation of university patents, based on the identification of commercial opportunities in technology transfer (TT). Patent applications from the Benemerita Universidad Autonoma de Puebla (BUAP) and the Universidad Autonoma del Estado de Morelos (UAEM) were used for the study. The methodology consisted of the analysis of 269 patent applications in a period of 10 years 2009-2018, in accordance with the statistical International Patent Classification (IPC), through 4 steps: (a) construction of the patent database, with the use of the patent tool of the Mexican Institute of Intellectual Property, (b) identification of inventive capabilities, through the World Intellectual Property Organization, (c) distribution by industries of intensity and technological market opportunity, with the tool of the Organization for Economic Cooperation and Development, and (d) analysis of market behavior, through the study of the 36 applications of the pharmaceutical patent area, from both universities. The results showed that 68.4 % of BUAP and 75.6 % of UAEM reflected a predominantly competitive positioning in high technology and medium-high technology industries. The advantage of the proposed tool is that it allows the recognition of the technological market opportunity based on the construction of scenarios related to the IPC behavior., Ante la transición a universidades emprendedoras, existe la tendencia a incrementar el patentamiento, aunque sin un estudio profundo del potencial comercial, por lo que el porcentaje de los productos que lo logran es muy bajo. El objetivo de esta investigación fue diseñar una estrategia de evaluación tecnológica y comercial de patentes universitarias a partir de la identificación de oportunidades en transferencia de tecnología (TT). Para ello, se examinaron 269 solicitudes de patente de la Benemérita Universidad Autónoma de Puebla (BUAP) y de la Universidad Autónoma del Estado de Morelos (UAEM), de acuerdo con la Clasificación Internacional de Patentes (CIP), en un periodo de 10 años (2009-2018), mediante 4 pasos: (a) construcción de la base de datos con la herramienta del Instituto Mexicano de Propiedad Intelectual, (b) identificación de las capacidades inventivas, a través de la Organización Mundial de la Propiedad Intelectual, (c) distribución por industrias de intensidad y oportunidad de mercado tecnológico, de acuerdo con la Organización para la Cooperación y el Desarrollo Económicos, y (d) análisis del comportamiento del mercado, mediante el estudio de las 36 solicitudes del área farmacéutica de ambas universidades. Los resultados mostraron que el 68.4 % de la BUAP y 75.6 % de la UAEM presentan un posicionamiento competitivo predominante en industrias de alta y mediana-alta tecnología. La ventaja de la herramienta propuesta es que permite reconocer la oportunidad del mercado tecnológico a partir de la construcción de escenarios relacionados con el comportamiento de la CIP.

The excitation of short electric monopulses of space charge waves with wide frequency spectrum of terahertz range in nitride films has been theoretically investigated. The excitation of these pulses with duration ≤5 ps and high peak values of electric fields is possible in n-GaN or n-InN films of submicron thickness in the presence of negative differential conductivity. The simulation of nonlinear dynamics of pulses was performed with due regard for the nonlocal dependence of the drift electron velocity on the average electron energy. Optimal values of the applied constant electric fields and equilibrium electron concentration for excitation of monopulses are specified. The monopulse dynamics is weakly dependent on the film width and also on the value and waveform of input excitation pulses. Short electric monopulses differ from domains of strong electric field in Gunn diodes built on bulk crystals with negative differential conductivity.

In the framework of developed approximate phenomenological model we have performed the investigation of modulation instability of transversely limited electromagnetic waves of terahertz range in paraelectric crystals SrTiO3 at the temperatures of about 77 K. Cubic nonlinearity and frequency dispersion correspond to the existence of modulation instability of long input pulses. The results of numerical investigations of the modulation instability are presented. Transversal boundedness of the input pulses can stabilize the modulation instability. Modulation instability threshold is reduced in the presence of reflections from the crystal boundaries. In the case of development of the modulation instability it is possible to generate a sequence of short terahertz pulses at the output of the crystal. The focusing of input pulses reduces the threshold of modulation instability.

In this work the performance of a rectangular patch antenna with a rectangular ground plane is compared to the case where a circular one is used. For circular case, bigger gain and smaller bandwidth are observed. The comparison was also realized when defects were implemented on the ground planes. As a result, changes on gains, S11 parameter, and bandwidths were observed. For rectangular antenna on rectangular substrate with Defect Ground Structure (DGS), the main improvement is on S11 parameter. For the case of circular ground plane (or substrate) the Bandwidth shows an increment of 113.59% compare to the case without defects. All antennas were simulated using FEKO software., En este trabajo se compara el rendimiento de una antena de parche rectangular realizada sobre planos de tierra rectangular y circular, respectivamente. Se observa una mayor ganancia para el caso circular pero un menor ancho de banda. La comparación se llevó a cabo también cuando a los planos de tierra se agregaron defectos. Como resultado, se observaron cambios en las ganancias, el parámetro S11 y los anchos de banda. Para la antena rectangular sobre substrato rectangular con Defectos en el Substrato (DGS, por sus siglas en inglés) la principal mejora observada fue sobre el parámetro S11. Para el caso del plano de tierra (o substrato) circular, el ancho de banda muestra un incremento de 113.59% comparado con el caso sin defectos. Las antenas fueron simuladas utilizando el software FEKO.