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1. Industrial graphene coating of low-voltage copper wires for power distribution

Author

Mishra, Neeraj, Vlamidis, Ylea, Martini, Leonardo, Lanza, Arianna, Jouvray, Alex, La Sala, Marco, Gemmi, Mauro, Mišeikis, Vaidotas, Perry, Matthew, Teo, Kenneth B. K., Forti, Stiven, and Coletti, Camilla

Subjects
Physics - Applied Physics, Electrical Engineering and Systems Science - Signal Processing
Abstract

Copper (Cu) is the electrical conductor of choice in many categories of electrical wiring, with household and building installations being the major market of this metal. This work demonstrates the coating of Cu wires - with diameters relevant for low voltage (LV) applications - with graphene. The chemical vapor deposition (CVD) coating process is rapid, safe, scalable and industrially compatible. Graphene-coated Cu wires display oxidation resistance and increased electrical conductivity (up to 1% immediately after coating and up to 3% after 24 months), allowing for wire diameter reduction and thus significant savings in wire production costs. Combined spectroscopic and diffraction analysis indicate that the conductivity increase is due to a change in Cu crystallinity, induced by the coating process conditions, while electrical testing of aged wires shows that graphene plays a major role in maintaining improved electrical performances over long periods of time. Finally, graphene coating of Cu wires using an ambient pressure roll-to-roll (R2R) CVD reactor is demonstrated. This enables the in-line production of graphene-coated metallic wires as required for industrial scale-up., Comment: 13 pages, 5 figures

Published
2022

3. Industrial Graphene Coating of Low-Voltage Copper Wires for Power Distribution

Author

Mishra, Neeraj, primary, Vlamidis, Ylea, additional, Martini, Leonardo, additional, Lanza, Arianna, additional, Gebeyehu, Zewdu M., additional, Jouvray, Alex, additional, La Sala, Marco, additional, Gemmi, Mauro, additional, Mišeikis, Vaidotas, additional, Perry, Matthew, additional, Teo, Kenneth B. K., additional, Forti, Stiven, additional, and Coletti, Camilla, additional

Published
2023
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7. Production and processing of graphene and related materials

Author

Backes, Claudia, Abdelkader, Amr M., Alonso, Concepcion, Andrieux-Ledier, Amandine, Arenal, Raul, Azpeitia, Jon, Balakrishnan, Nilanthy, Banszerus, Luca, Barjon, Julien, Bartali, Ruben, Bellani, Sebastiano, Berger, Claire, Berger, Reinhard, Ortega, M. M. Bernal, Bernard, Carlo, Beton, Peter H., Beyer, Andre, Bianco, Alberto, Boggild, Peter, Bonaccorso, Francesco, Barin, Gabriela Borin, Botas, Cristina, Bueno, Rebeca A., Carriazo, Daniel, Castellanos-Gomez, Andres, Christian, Meganne, Ciesielski, Artur, Ciuk, Tymoteusz, Cole, Matthew T., Coleman, Jonathan, Coletti, Camilla, Crema, Luigi, Cun, Huanyao, Dasler, Daniela, De Fazio, Domenico, Diez, Noel, Drieschner, Simon, Duesberg, Georg S., Fasel, Roman, Feng, Xinliang, Fina, Alberto, Forti, Stiven, Galiotis, Costas, Garberoglio, Giovanni, Garcia, Jorge M., Antonio Garrido, Jose, Gibertini, Marco, Goelzhaeuser, Armin, Gomez, Julio, Greber, Thomas, Hauke, Frank, Hemmi, Adrian, Hernandez-Rodriguez, Irene, Hirsch, Andreas, Hodge, Stephen A., Huttel, Yves, Jepsen, Peter U., Jimenez, Ignacio, Kaiser, Ute, Kaplas, Tommi, Kim, HoKwon, Kis, Andras, Papagelis, Konstantinos, Kostarelos, Kostas, Krajewska, Aleksandra, Lee, Kangho, Li, Changfeng, Lipsanen, Harri, Liscio, Andrea, Lohe, Martin R., Loiseau, Annick, Lombardi, Lucia, Francisca Lopez, Maria, Martin, Oliver, Martin, Cristina, Martinez, Lidia, Angel Martin-Gago, Jose, Ignacio Martinez, Jose, Marzari, Nicola, Mayoral, Alvaro, McManus, John, Melucci, Manuela, Mendez, Javier, Merino, Cesar, Merino, Pablo, Meyer, Andreas P., Miniussi, Elisa, Miseikis, Vaidotas, Mishra, Neeraj, Morandi, Vittorio, Munuera, Carmen, Munoz, Roberto, Nolan, Hugo, Ortolani, Luca, Ott, Anna K., Palacio, Irene, Palermo, Vincenzo, Parthenios, John, Pasternak, Iwona, Patane, Amalia, Prato, Maurizio, Prevost, Henri, Prudkovskiy, Vladimir, Pugno, Nicola, Rojo, Teofilo, Rossi, Antonio, Ruffieux, Pascal, Samori, Paolo, Schue, Leonard, Setijadi, Eki, Seyller, Thomas, Speranza, Giorgio, Stampfer, Christoph, Stenger, Ingrid, Strupinski, Wlodek, Svirko, Yuri, Taioli, Simone, Teo, Kenneth B. K., Testi, Matteo, Tomarchio, Flavia, Tortello, Mauro, Treossi, Emanuele, Turchanin, Andrey, Vazquez, Ester, Villaro, Elvira, Whelan, Patrick R., Xia, Zhenyuan, Yakimova, Rositsa, Yang, Sheng, Yazdi, Gholamreza, Yim, Chanyoung, Yoon, Duhee, Zhang, Xianghui, Zhuang, Xiaodong, Colombo, Luigi, Ferrari, Andrea C., Garcia-Hernandez, Mar, Backes, Claudia, Abdelkader, Amr M., Alonso, Concepcion, Andrieux-Ledier, Amandine, Arenal, Raul, Azpeitia, Jon, Balakrishnan, Nilanthy, Banszerus, Luca, Barjon, Julien, Bartali, Ruben, Bellani, Sebastiano, Berger, Claire, Berger, Reinhard, Ortega, M. M. Bernal, Bernard, Carlo, Beton, Peter H., Beyer, Andre, Bianco, Alberto, Boggild, Peter, Bonaccorso, Francesco, Barin, Gabriela Borin, Botas, Cristina, Bueno, Rebeca A., Carriazo, Daniel, Castellanos-Gomez, Andres, Christian, Meganne, Ciesielski, Artur, Ciuk, Tymoteusz, Cole, Matthew T., Coleman, Jonathan, Coletti, Camilla, Crema, Luigi, Cun, Huanyao, Dasler, Daniela, De Fazio, Domenico, Diez, Noel, Drieschner, Simon, Duesberg, Georg S., Fasel, Roman, Feng, Xinliang, Fina, Alberto, Forti, Stiven, Galiotis, Costas, Garberoglio, Giovanni, Garcia, Jorge M., Antonio Garrido, Jose, Gibertini, Marco, Goelzhaeuser, Armin, Gomez, Julio, Greber, Thomas, Hauke, Frank, Hemmi, Adrian, Hernandez-Rodriguez, Irene, Hirsch, Andreas, Hodge, Stephen A., Huttel, Yves, Jepsen, Peter U., Jimenez, Ignacio, Kaiser, Ute, Kaplas, Tommi, Kim, HoKwon, Kis, Andras, Papagelis, Konstantinos, Kostarelos, Kostas, Krajewska, Aleksandra, Lee, Kangho, Li, Changfeng, Lipsanen, Harri, Liscio, Andrea, Lohe, Martin R., Loiseau, Annick, Lombardi, Lucia, Francisca Lopez, Maria, Martin, Oliver, Martin, Cristina, Martinez, Lidia, Angel Martin-Gago, Jose, Ignacio Martinez, Jose, Marzari, Nicola, Mayoral, Alvaro, McManus, John, Melucci, Manuela, Mendez, Javier, Merino, Cesar, Merino, Pablo, Meyer, Andreas P., Miniussi, Elisa, Miseikis, Vaidotas, Mishra, Neeraj, Morandi, Vittorio, Munuera, Carmen, Munoz, Roberto, Nolan, Hugo, Ortolani, Luca, Ott, Anna K., Palacio, Irene, Palermo, Vincenzo, Parthenios, John, Pasternak, Iwona, Patane, Amalia, Prato, Maurizio, Prevost, Henri, Prudkovskiy, Vladimir, Pugno, Nicola, Rojo, Teofilo, Rossi, Antonio, Ruffieux, Pascal, Samori, Paolo, Schue, Leonard, Setijadi, Eki, Seyller, Thomas, Speranza, Giorgio, Stampfer, Christoph, Stenger, Ingrid, Strupinski, Wlodek, Svirko, Yuri, Taioli, Simone, Teo, Kenneth B. K., Testi, Matteo, Tomarchio, Flavia, Tortello, Mauro, Treossi, Emanuele, Turchanin, Andrey, Vazquez, Ester, Villaro, Elvira, Whelan, Patrick R., Xia, Zhenyuan, Yakimova, Rositsa, Yang, Sheng, Yazdi, Gholamreza, Yim, Chanyoung, Yoon, Duhee, Zhang, Xianghui, Zhuang, Xiaodong, Colombo, Luigi, Ferrari, Andrea C., and Garcia-Hernandez, Mar

Abstract

We present an overview of the main techniques for production and processing of graphene and related materials (GRMs), as well as the key characterization procedures. We adopt a hands-on approach, providing practical details and procedures as derived from literature as well as from the authors experience, in order to enable the reader to reproduce the results. Section I is devoted to bottom up approaches, whereby individual constituents are pieced together into more complex structures. We consider graphene nanoribbons (GNRs) produced either by solution processing or by on-surface synthesis in ultra high vacuum (UHV), as well carbon nanomembranes (CNM). Production of a variety of GNRs with tailored band gaps and edge shapes is now possible. CNMs can be tuned in terms of porosity, crystallinity and electronic behaviour. Section II covers top down techniques. These rely on breaking down of a layered precursor, in the graphene case usually natural crystals like graphite or artificially synthesized materials, such as highly oriented pyrolythic graphite, monolayers or few layers (FL) flakes. The main focus of this section is on various exfoliation techniques in a liquid media, either intercalation or liquid phase exfoliation (LPE). The choice of precursor, exfoliation method, medium as well as the control of parameters such as time or temperature are crucial. A definite choice of parameters and conditions yields a particular material with specific properties that makes it more suitable for a targeted application. We cover protocols for the graphitic precursors to graphene oxide (GO). This is an important material for a range of applications in biomedicine, energy storage, nanocomposites, etc. Hummers and modified Hummers methods are used to make GO that subsequently can be reduced to obtain reduced graphene oxide (RGO) with a variety of strategies. GO flakes are also employed to prepare three-dimensional (3d) low density structures, such as sponges, foams, hydro- or aeroge, Funding Agencies|European Commission Graphene Flagship Core1 [696656, 785219]

Published
2020
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8. MICROWAVE DEVICES: Carbon nanotubes as cold cathodes

Author

Teo, Kenneth B. K., Minoux, Eric, Hudanski, Ludovic, Peauger, Franck, Schnell, Jean-Philippe, Gangloff, Laurent, Legagneux, Pierre, Dieumegard, Dominique, Amaratunga, Gehan A. J., and Milne, William I.

Published
2005

9. The Role of Plasma in Plasma Enhanced Chemical Vapour Deposition of Nanostructure Growth

Author

Hash, David B, Meyyappan, M, Teo, Kenneth B. K, Lacerda, Rodrigo G, and Rupesinghe, Nalin L

Subjects
Plasma Physics
Abstract

Chemical vapour deposition (CVD) has become the preferred process for high yield growth of carbon nanotubes and nanofibres because of its ability to pattern growth through lithographic positioning of transition metal catalysts on substrates. Many potential applications of nanotubes such as field emitters [1] require not only patterned growth but also vertical alignment. Some degree of ali,ment in thermal CVD processes can be obtained when carbon nanotubes are grown closely together as a result of van der Waals interactions. The ali,onment however is marginal, and the van der Waals prerequisite makes growth of freestanding nanofibres with thermal CVD unrealizable. The application of electric fields as a means of ali,onment has been shown to overcome this limitation [2-5], and highly aligned nanostructures can be grown if electric fields on the order of 0.5 V/microns are employed. Plasma enhanced CVD in various configurations including dc, rf, microwave, inductive and electron cyclotron resonance has been pursued as a means of enabling alignment in the CVD process. However, the sheath fields for the non-dc sources are in general not sufficient for a high degree of ali,pment and an additional dc bias is usually applied to the growth substrate. This begs the question as to the actual role of the plasma. It is clear that the plasma itself is not required for aligned growth as references [3] and [4] employed fields through small applied voltages (3-20 V) across very small electrode spacings (10-100 microns) and thus avoided striking a discharge.

Published
2004

10. Production and processing of graphene and related materials

Author

Backes, Claudia, primary, Abdelkader, Amr M, additional, Alonso, Concepción, additional, Andrieux-Ledier, Amandine, additional, Arenal, Raul, additional, Azpeitia, Jon, additional, Balakrishnan, Nilanthy, additional, Banszerus, Luca, additional, Barjon, Julien, additional, Bartali, Ruben, additional, Bellani, Sebastiano, additional, Berger, Claire, additional, Berger, Reinhard, additional, Ortega, M M Bernal, additional, Bernard, Carlo, additional, Beton, Peter H, additional, Beyer, André, additional, Bianco, Alberto, additional, Bøggild, Peter, additional, Bonaccorso, Francesco, additional, Barin, Gabriela Borin, additional, Botas, Cristina, additional, Bueno, Rebeca A, additional, Carriazo, Daniel, additional, Castellanos-Gomez, Andres, additional, Christian, Meganne, additional, Ciesielski, Artur, additional, Ciuk, Tymoteusz, additional, Cole, Matthew T, additional, Coleman, Jonathan, additional, Coletti, Camilla, additional, Crema, Luigi, additional, Cun, Huanyao, additional, Dasler, Daniela, additional, De Fazio, Domenico, additional, Díez, Noel, additional, Drieschner, Simon, additional, Duesberg, Georg S, additional, Fasel, Roman, additional, Feng, Xinliang, additional, Fina, Alberto, additional, Forti, Stiven, additional, Galiotis, Costas, additional, Garberoglio, Giovanni, additional, García, Jorge M, additional, Garrido, Jose Antonio, additional, Gibertini, Marco, additional, Gölzhäuser, Armin, additional, Gómez, Julio, additional, Greber, Thomas, additional, Hauke, Frank, additional, Hemmi, Adrian, additional, Hernandez-Rodriguez, Irene, additional, Hirsch, Andreas, additional, Hodge, Stephen A, additional, Huttel, Yves, additional, Jepsen, Peter U, additional, Jimenez, Ignacio, additional, Kaiser, Ute, additional, Kaplas, Tommi, additional, Kim, HoKwon, additional, Kis, Andras, additional, Papagelis, Konstantinos, additional, Kostarelos, Kostas, additional, Krajewska, Aleksandra, additional, Lee, Kangho, additional, Li, Changfeng, additional, Lipsanen, Harri, additional, Liscio, Andrea, additional, Lohe, Martin R, additional, Loiseau, Annick, additional, Lombardi, Lucia, additional, Francisca López, Maria, additional, Martin, Oliver, additional, Martín, Cristina, additional, Martínez, Lidia, additional, Martin-Gago, Jose Angel, additional, Ignacio Martínez, José, additional, Marzari, Nicola, additional, Mayoral, Álvaro, additional, McManus, John, additional, Melucci, Manuela, additional, Méndez, Javier, additional, Merino, Cesar, additional, Merino, Pablo, additional, Meyer, Andreas P, additional, Miniussi, Elisa, additional, Miseikis, Vaidotas, additional, Mishra, Neeraj, additional, Morandi, Vittorio, additional, Munuera, Carmen, additional, Muñoz, Roberto, additional, Nolan, Hugo, additional, Ortolani, Luca, additional, Ott, Anna K, additional, Palacio, Irene, additional, Palermo, Vincenzo, additional, Parthenios, John, additional, Pasternak, Iwona, additional, Patane, Amalia, additional, Prato, Maurizio, additional, Prevost, Henri, additional, Prudkovskiy, Vladimir, additional, Pugno, Nicola, additional, Rojo, Teófilo, additional, Rossi, Antonio, additional, Ruffieux, Pascal, additional, Samorì, Paolo, additional, Schué, Léonard, additional, Setijadi, Eki, additional, Seyller, Thomas, additional, Speranza, Giorgio, additional, Stampfer, Christoph, additional, Stenger, Ingrid, additional, Strupinski, Wlodek, additional, Svirko, Yuri, additional, Taioli, Simone, additional, Teo, Kenneth B K, additional, Testi, Matteo, additional, Tomarchio, Flavia, additional, Tortello, Mauro, additional, Treossi, Emanuele, additional, Turchanin, Andrey, additional, Vazquez, Ester, additional, Villaro, Elvira, additional, Whelan, Patrick R, additional, Xia, Zhenyuan, additional, Yakimova, Rositza, additional, Yang, Sheng, additional, Yazdi, G Reza, additional, Yim, Chanyoung, additional, Yoon, Duhee, additional, Zhang, Xianghui, additional, Zhuang, Xiaodong, additional, Colombo, Luigi, additional, Ferrari, Andrea C, additional, and Garcia-Hernandez, Mar, additional

Published
2020
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11. Progress on Pt-Salt Doped Carbon Nanotubes for Local Interconnects

Author

Liang, Jie, Ramos, Raphael, Dijon, Jean, Okuno, Hanako, Kalita, Dipankar, Jaehyun, Lee, Georgiev, Vihar P., Barrada, Salim, Sadi, Toufik, Asen, Asenov, Uhlig, Benjamin, Lilienthal, Katharina, Dhavamani, Abitha, Gotsmann, Bernd, Chen, Bingham, Teo, Kenneth B. K., Pandey, Reetu Raj, Todri-Sanial, Aida, Smart Integrated Electronic Systems (SmartIES), Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Département Nanotec (D2NT), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), University of Glasgow, James Watt School of Engineering [Univ Glasgow], Fraunhofer Institute for Physical Measurement Techniques (Fraunhofer IPM), Fraunhofer (Fraunhofer-Gesellschaft), IBM Research Laboratory [Zurich], IBM Research [Zurich], Aixtron (UK), AIXTRON SE, European Project: 688612,H2020,H2020-ICT-2015,CONNECT(2016), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

National audience

Published
2018

12. Aligned carbon nanotube technology for field emission applications

Author

Teo, Kenneth B. K.

Subjects
ComputerApplications_COMPUTERSINOTHERSYSTEMS, ComputingMethodologies_GENERAL
Abstract

This thesis was digitised by the British Library from microfilm. You can acquire a single copy of this thesis for research purposes by clicking on the padlock icon on the thesis file. Please be aware that the text in the supplied thesis pdf file may not be as clear as text in a thesis that was born digital or digitised directly from paper due to the conversion in format. However, all of the theses in Apollo that were digitised from microfilm are readable and have been processed by optical character recognition (OCR) technology which means the reader can search and find text within the document. If you are the author of this thesis and would like to make your work openly available, please contact us: thesis@repository.cam.ac.uk

Published
2018
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13. Fab‐Compatible Graphene: Wafer‐Scale Synthesis of Graphene on Sapphire: Toward Fab‐Compatible Graphene (Small 50/2019)

Author

Mishra, Neeraj, primary, Forti, Stiven, additional, Fabbri, Filippo, additional, Martini, Leonardo, additional, McAleese, Clifford, additional, Conran, Ben R., additional, Whelan, Patrick R., additional, Shivayogimath, Abhay, additional, Jessen, Bjarke S., additional, Buß, Lars, additional, Falta, Jens, additional, Aliaj, Ilirjan, additional, Roddaro, Stefano, additional, Flege, Jan I., additional, Bøggild, Peter, additional, Teo, Kenneth B. K., additional, and Coletti, Camilla, additional

Published
2019
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14. Wafer‐Scale Synthesis of Graphene on Sapphire: Toward Fab‐Compatible Graphene

Author

Mishra, Neeraj, primary, Forti, Stiven, additional, Fabbri, Filippo, additional, Martini, Leonardo, additional, McAleese, Clifford, additional, Conran, Ben R., additional, Whelan, Patrick R., additional, Shivayogimath, Abhay, additional, Jessen, Bjarke S., additional, Buß, Lars, additional, Falta, Jens, additional, Aliaj, Ilirjan, additional, Roddaro, Stefano, additional, Flege, Jan I., additional, Bøggild, Peter, additional, Teo, Kenneth B. K., additional, and Coletti, Camilla, additional

Published
2019
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15. Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphene

Author

Mishra, Neeraj, Forti, Stiven, Fabbri, Filippo, Martini, Leonardo, McAleese, Clifford, Conran, Ben R., Whelan, Patrick Rebsdorf, Shivayogimath, Abhay, Jessen, Bjarke Sørensen, Buß, Lars, Falta, Jens, Aliaj, Ilirjan, Roddaro, Stefano, Flege, Jan I., Bøggild, Peter, Teo, Kenneth B. K., Coletti, Camilla, Mishra, Neeraj, Forti, Stiven, Fabbri, Filippo, Martini, Leonardo, McAleese, Clifford, Conran, Ben R., Whelan, Patrick Rebsdorf, Shivayogimath, Abhay, Jessen, Bjarke Sørensen, Buß, Lars, Falta, Jens, Aliaj, Ilirjan, Roddaro, Stefano, Flege, Jan I., Bøggild, Peter, Teo, Kenneth B. K., and Coletti, Camilla

Abstract

The adoption of graphene in electronics, optoelectronics, and photonics is hindered by the difficulty in obtaining high-quality material on technologically relevant substrates, over wafer-scale sizes, and with metal contamination levels compatible with industrial requirements. To date, the direct growth of graphene on insulating substrates has proved to be challenging, usually requiring metal-catalysts or yielding defective graphene. In this work, a metal-free approach implemented in commercially available reactors to obtain high-quality monolayer graphene on c-plane sapphire substrates via chemical vapor deposition is demonstrated. Low energy electron diffraction, low energy electron microscopy, and scanning tunneling microscopy measurements identify the Al-rich reconstruction (√31×√31) R ± 9° of sapphire to be crucial for obtaining epitaxial graphene. Raman spectroscopy and electrical transport measurements reveal high-quality graphene with mobilities consistently above 2000 cm2 V-1 s-1. The process is scaled up to 4 and 6 in. wafers sizes and metal contamination levels are retrieved to be within the limits for back-end-of-line integration. The growth process introduced here establishes a method for the synthesis of wafer-scale graphene films on a technologically viable basis.

Published
2019

16. Understanding Electromigration in Cu-CNT Composite Interconnects: A Multiscale Electrothermal Simulation Study

Author

Lee, Jaehyun, primary, Berrada, Salim, additional, Adamu-Lema, Fikru, additional, Nagy, Nicole, additional, Georgiev, Vihar P., additional, Sadi, Toufik, additional, Liang, Jie, additional, Ramos, Raphael, additional, Carrillo-Nunez, Hamilton, additional, Kalita, Dipankar, additional, Lilienthal, Katharina, additional, Wislicenus, Marcus, additional, Pandey, Reeturaj, additional, Chen, Bingan, additional, Teo, Kenneth B. K., additional, Goncalves, Goncalo, additional, Okuno, Hanako, additional, Uhlig, Benjamin, additional, Todri-Sanial, Aida, additional, Dijon, Jean, additional, and Asenov, Asen, additional

Published
2018
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17. Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide.

Author

Sun, Jie, Lindvall, Niclas, Cole, Matthew T., Wang, Teng, Booth, Tim J., Bo\ggild, Peter, Teo, Kenneth B. K., Liu, Johan, and Yurgens, August

Subjects
CHEMICAL vapor deposition, NANOCRYSTALS, SILICON research, ELECTRIC fields, ELECTRODES, SCANNING probe microscopy, RAMAN spectroscopy
Abstract

Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes, and are smooth and uniform across whole wafers, as inspected by optical-, scanning electron-, and atomic force microscopy. The sp2 hybridized carbon structure is confirmed by Raman spectroscopy. Room temperature electrical measurements show ohmic behavior (sheet resistance similar to exfoliated graphene) and up to 13% of electric-field effect. The Hall mobility is ∼40 cm2/Vs, which is an order of magnitude higher than previously reported values for nanocrystalline graphene. Transmission electron microscopy, Raman spectroscopy, and transport measurements indicate a graphene crystalline domain size ∼10 nm. The absence of transfer to another substrate allows avoidance of wrinkles, holes, and etching residues which are usually detrimental to device performance. This work provides a broader perspective of graphene CVD and shows a viable route toward applications involving transparent electrodes. [ABSTRACT FROM AUTHOR]

Published
2012
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18. Transport in polymer-supported chemically-doped CVD graphene

Author

Kang, Moon H., primary, Qiu, Guangyu, additional, Chen, Bingan, additional, Jouvray, Alex, additional, Teo, Kenneth B. K., additional, Cepek, Cinzia, additional, Wu, Lawrence, additional, Kim, Jongmin, additional, Milne, William I., additional, and Cole, Matthew T., additional

Published
2017
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20. Graphene GaN-Based Schottky Ultraviolet Detectors

Author

Xu, Kun, primary, Xu, Chen, additional, Xie, Yiyang, additional, Deng, Jun, additional, Zhu, Yanxu, additional, Guo, Weiling, additional, Xun, Meng, additional, Teo, Kenneth B. K., additional, Chen, Hongda, additional, and Sun, Jie, additional

Published
2015
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23. Vertically aligned CNT growth on a microfabricated silicon heater with integrated temperature control—determination of the activation energy from a continuous thermal gradient

Author

Engstrøm, Daniel Southcott, Rupesinghe, Nalin L, Teo, Kenneth B K, Milne, William I, Bøggild, Peter, Engstrøm, Daniel Southcott, Rupesinghe, Nalin L, Teo, Kenneth B K, Milne, William I, and Bøggild, Peter

Abstract

Silicon microheaters for local growth of a vertically aligned carbon nanotube (VACNT) were fabricated. The microheaters had a four-point-probe structure that measured the silicon conductivity variations in the heated region which is a measure of the temperature. Through FEM simulations the temperature was determined on the entire microheater structure, and the simulated temperatures were verified by micro-Raman spectroscopy. The microheaters provided a temperature gradient along which VACNTs were grown at 575–800 °C simultaneously. The VACNT growth activation energy was determined to 0.86 eV from the VACNT growth rate variation along the microheater's temperature gradient.

Published
2011

25. Evolutionary Kinetics of Graphene Formation on Copper

Author

Celebi, Kemal, primary, Cole, Matthew T., additional, Choi, Jong Won, additional, Wyczisk, Frederic, additional, Legagneux, Pierre, additional, Rupesinghe, Nalin, additional, Robertson, John, additional, Teo, Kenneth B. K., additional, and Park, Hyung Gyu, additional

Published
2013
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26. Growth of continuous graphene by open roll-to-roll chemical vapor deposition.

Author

Guofang Zhong, Xingyi Wu, D'Arsie, Lorenzo, Teo, Kenneth B. K., Rupesinghe, Nalin L., Jouvray, Alex, and Robertson, John

Subjects
GRAPHENE, CHEMICAL vapor deposition, MONOMOLECULAR films, CHEMICAL reactors, TEMPERATURE
Abstract

We demonstrate the growth of high-quality, continuous monolayer graphene on Cu foils using an open roll-to-roll (R2R) chemical vapor deposition (CVD) reactor with both static and moving foil growth conditions. N2 instead of Ar was used as carrier gas to reduce process cost, and the concentrations of H2 and CH4 reactants were kept below the lower explosive limit to ensure process safety for reactor ends open to ambient. The carrier mobility of graphene deposited at a Cu foil winding speed of 5 mm/min was 5270-6040 cm2V-1 s-1 at room temperature (on 50 μm ×50 μm Hall devices). These results will enable the inline integration of graphene CVD for industrial R2R production. [ABSTRACT FROM AUTHOR]

Published
2016
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28. Direct Chemical Vapor Deposition of Large-Area Carbon Thin Films on Gallium Nitride for Transparent Electrodes: A First Attempt

Author

Sun, Jie, primary, Cole, Matthew T., additional, Ahmad, S. Awais, additional, Backe, Olof, additional, Ive, Tommy, additional, Loffler, Markus, additional, Lindvall, Niclas, additional, Olsson, Eva, additional, Teo, Kenneth B. K., additional, Liu, Johan, additional, Larsson, Anders, additional, Yurgens, August, additional, and Haglund, Åsa, additional

Published
2012
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33. Carbon nanotube based photocathodes for high frequency amplifiers

Author

Le Sech, Nicolas, primary, Hudanski, Ludovic, additional, Minoux, Eric, additional, Gangloff, Laurent, additional, Schnell, Jean-Philippe, additional, Caillard, Amael, additional, Cojocaru, Costel-Sorin, additional, Teo, Kenneth B. K., additional, Robertson, John, additional, Milne, William I., additional, Chatelet, Marc, additional, Pribat, Didier, additional, and Legagneux, Pierre, additional

Published
2009
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35. Carbon nanotube based photocathodes

Author

Hudanski, Ludovic, primary, Minoux, Eric, additional, Gangloff, Laurent, additional, Teo, Kenneth B K, additional, Schnell, Jean-Philippe, additional, Xavier, Stephane, additional, Robertson, John, additional, Milne, William I, additional, Pribat, Didier, additional, and Legagneux, Pierre, additional

Published
2008
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39. Achieving High-Current Carbon Nanotube Emitters

Author

Minoux, Eric, primary, Groening, Oliver, additional, Teo, Kenneth B. K., additional, Dalal, Sharvari H., additional, Gangloff, Laurent, additional, Schnell, Jean-Philippe, additional, Hudanski, Ludovic, additional, Bu, Ian Y. Y., additional, Vincent, Pascal, additional, Legagneux, Pierre, additional, Amaratunga, Gehan A. J., additional, and Milne, William I., additional

Published
2005
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40. Carbon nanotubes as cold cathodes

Author

Teo, Kenneth B. K., primary, Minoux, Eric, additional, Hudanski, Ludovic, additional, Peauger, Franck, additional, Schnell, Jean-Philippe, additional, Gangloff, Laurent, additional, Legagneux, Pierre, additional, Dieumegard, Dominique, additional, Amaratunga, Gehan A. J., additional, and Milne, William I., additional

Published
2005
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46. The Significance of Plasma Heating in Carbon Nanotube and Nanofiber Growth

Author

Teo, Kenneth B. K., primary, Hash, David B., additional, Lacerda, Rodrigo G., additional, Rupesinghe, Nalin L., additional, Bell, Martin S., additional, Dalal, Sharvari H., additional, Bose, Deepak, additional, Govindan, T. R., additional, Cruden, Brett A., additional, Chhowalla, Manish, additional, Amaratunga, Gehan A. J., additional, Meyyappan, M., additional, and Milne, William I., additional

Published
2004
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47. Carbon Nanotube Electron Sources for Electron Microscopes

Author

Jonge, Niels de, primary, Oostveen, Jim T., additional, Rooij, Theo van, additional, Allioux, Myriam, additional, Doytcheva, Maya, additional, Kaiser, Monja, additional, Teo, Kenneth B. K., additional, Lacerda, Rodrigo G., additional, and Milne, William I., additional

Published
2004
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48. Superhydrophobic Carbon Nanotube Forests

Author

Lau, Kenneth K. S., primary, Bico, José, additional, Teo, Kenneth B. K., additional, Chhowalla, Manish, additional, Amaratunga, Gehan A. J., additional, Milne, William I., additional, McKinley, Gareth H., additional, and Gleason, Karen K., additional

Published
2003
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50. Field emission from individual thin carbon nanotubes.

Author

de Jonge, Niels, Allioux, Myriam, Doytcheva, Maya, Kaiser, Monja, Teo, Kenneth B. K., Lacerda, Rodrigo G., and Milne, William I.

Subjects
NANOTUBES, CARBON, TUNGSTEN, FIELD emission, ELECTRON emission
Abstract

Individual thin carbon nanotubes with closed ends were mounted on tungsten support tips and their surfaces were thoroughly cleaned. We show these carbon nanotube electron emitters have Fowler-Nordheim behavior and we observed no deviation from this model for thin nanotubes. The measurements were consistent with numerical simulation. © 2004 American Institute of Physics [ABSTRACT FROM AUTHOR]

Published
2004
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