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Deep learning, a new branch of machine learning algorithm, has emerged as a fast growing trend in medical imaging and become the state-of-the-art method in various clinical applications such as Radiology, Histo-pathology and Radiation Oncology. Specifically in radiation oncology, deep learning has shown its power in performing automatic segmentation tasks in radiation therapy for Organs-At-Risks (OAR), given its potential in improving the efficiency of OAR contouring and reducing the inter- and intra-observer variabilities. The similar interests were shared for target volume segmentation, an essential step of radiation therapy treatment planning, where the gross tumor volume is defined and microscopic spread is encompassed. The deep learning-based automatic segmentation method has recently been expanded into target volume automatic segmentation. In this paper, the authors summarized the major deep learning architectures of supervised learning fashion related to target volume segmentation, reviewed the mechanism of each infrastructure, surveyed the use of these models in various imaging domains (including Computational Tomography with and without contrast, Magnetic Resonant Imaging and Positron Emission Tomography) and multiple clinical sites, and compared the performance of different models using standard geometric evaluation metrics. The paper concluded with a discussion of open challenges and potential paths of future research in target volume automatic segmentation and how it may benefit the clinical practice., Competing Interests: Conflicts of Interest: All authors have completed the ICMJE uniform disclosure form (available at https://dx.doi.org/10.21037/qims-21-168). The special issue “Artificial Intelligence for Image-guided Radiation Therapy” was commissioned by the editorial office without any funding or sponsorship. LD reports NIH grants for research in proton therapy and outcome studies, unrelated to this work. Sponsored research and honoraria from Varian Medical System. TL reports consulting fees, honoraria, and travel expenses from Varian Medical Systems unrelated to this work. Patent titled “Systems and methods for automatic, customized radiation treatment plan generation for cancer” was filed. The authors have no other conflicts of interest to declare., (2021 Quantitative Imaging in Medicine and Surgery. All rights reserved.)

The ability to accurately design carbon nanofibre (CN) field emitters with predictable electron emission characteristics will enable their use as electron sources in various applications such as microwave amplifiers, electron microscopy, parallel beam electron lithography and advanced Xray sources. Here, highly uniform CN arrays of controlled diameter, pitch and length were fabricated using plasma enhanced chemical vapour deposition and their individual emission characteristics and field enhancement factors were probed using scanning anode field emission mapping. For a pitch of 10 µm and a CN length of 5 µm, the directly measured enhancement factors of individual CNs was 242, which was in excellent agreement with conventional geometry estimates (240). We show here direct empirical evidence that in regular arrays of vertically aligned CNs the overall enhancement factor is reduced when the pitch between emitters is less than half the emitter height, in accordance to our electrostatic simulations. Individual emitters showed narrow Gaussian-like field enhancement distributions, in excellent agreement with electric field simulations.

It has been claimed that graphene growth on copper by chemical vapor deposition is dominated by crystallization from the surface initially supersaturated with carbon adatoms, which implies that the growth is independent of hydrocarbon addition after the nucleation phase. Here, we present an alternative growth model based on our observations that oppose this claim. Our Gompertzian sigmoidal growth kinetics and secondary nucleation behavior support the postulate that the growth can be controlled by adsorption-desorption dynamics and the dispersive kinetic processes of catalytic dissociation and dehydrogenation of carbon precursors on copper.

Introduction: Cone beam computed tomography (CBCT) is a relatively new technological innovation that utilises fl at-panel detector technology to obtain CT-like images. The key strength of a CBCT system is that cross-sectional imaging can be obtained using the angiographic fl at panel unit without having to move the patient, allowing the radiologist to obtain soft tissue imaging during the procedure. This allows treatment planning, guidance, and assessment of outcome to be performed in one interventional suite., Materials and Methods: From December 2008 to June 2009, 24 CBCT scans were performed during vascular interventional procedures on our department's newly installed multi-axis fl at panel angiographic unit., Results: Ten cases were performed for hepatic trans-arterial chemoembolisation, 9 cases for hepatic arterial Yttrium-90 infusion, while 5 cases were for other indications. CBCT was found to be useful in 20 of the 24 cases., Conclusion: Our early experience showed that CBCT was useful in impacting decisions during selected vascular interventional procedures. As CBCT technology improves, we can foresee wider applications of this technology.

The electric field enhancement associated with detailed structure within novel optical antenna nanostructures is modeled using the surface integral equation technique in the context of surface-enhanced Raman scattering (SERS). The antennae comprise random arrays of vertically aligned, multiwalled carbon nanotubes dressed with highly granular Ag. Different types of "hot-spot" underpinning the SERS are identified, but contrasting characteristics are revealed. Those at the outer edges of the Ag grains are antenna driven with field enhancement amplified in antenna antinodes while intergrain hotspots are largely independent of antenna activity. Hot-spots between the tops of antennae leaning towards each other also appear to benefit from antenna amplification.

Reconfigurable liquid crystal microlenses employing arrays of multiwalled carbon nanotubes (MWNTs) have been designed and fabricated. The cells consist of arrays of 2 microm high MWNTs grown by plasma-enhanced chemical vapor deposition on silicon with a top electrode of indium tin oxide coated glass positioned 20 microm above the silicon and the gap filled with the nematic liquid crystal BLO48. Simulations have found that, while its nematic liquid crystal aligns with MWNTs within a distance of 10nm, this distance is greatly enhanced by the application of an external electric field. Polarized light experiments show that light is focused with focal lengths ranging from approximately 7 microm to 12 microm.

A fabrication process for monolithic integration of vertically aligned carbon nanotubes in electrically insulated microfluidic channels is presented. A 150 nm thick amorphous silicon layer could be used both for anodic bonding of a glass lid to hermetically seal the microfluidic glass channels and for de-charging of the wafer during plasma enhanced chemical vapor deposition of the carbon nanotubes. The possibility of operating the device with electroosmotic flow was shown by performing standard electrophoretic separations of 50 microM fluorescein and 50 microM 5-carboxyfluorescein in a 25 mm long column containing vertical aligned carbon nanotubes. This is the first demonstration of electroosmotic pumping and electrokinetic separations in microfluidic channels with a monolithically integrated carbon nanotube forest.

We have fabricated single-walled carbon nanotube (SWNT) field effect transistors (FETs) with molybdenum source and drain contacts. Normally, these devices operate only as p-channel transistors, however, after polystyrene latex nanospheres were attached to the nanotubes close to the contacts, they changed to ambipolar operation. This strategy provides a simple method to modify the electrical behavior of unipolar SWNT-FETs by influencing the gate-channel electric field distribution and offset charge, so enabling complementary circuits to be fabricated.

We report the growth of carbon nanotubes on the size controlled iron catalytic nanoparticles. The nanotubes were grown by thermal chemical vapour deposition (CVD) in the temperature range 600-850 degrees C. The Fe films were deposited on silicon by pulsed laser deposition in vacuum. Atomic force microscopy measurements were performed on the catalytic nanoparticles. The topography of the catalytic nanoparticles shows the homogenous distribution of Fe catalyst. We observe the nanotubes are produced only at temperatures between 650 and 800 degrees C, and within this narrow temperature regime the yield of nanotubes reaches a maximum around 750 degrees C and then declines. Raman measurements illustrate a high G/D peak ratio indicating good nanotube quality. By further defining the size of the catalyst the diameter of these carbon nanotubes can be controlled.

This paper describes the growth of Carbon Nanotubes (CNTs) both aligned and non-aligned on fully processed CMOS substrates containing high temperature tungsten metallization. While the growth method has been demonstrated in fabricating CNT gas sensitive layers for high temperatures SOI CMOS sensors, it can be employed in a variety of applications which require the use of CNTs or other nanomaterials with CMOS electronics. In our experiments we have grown CNTs both on SOI CMOS substrates and SOI CMOS microhotplates (suspended on membranes formed by post-CMOS deep RIE etching). The fully processed SOI substrates contain CMOS devices and circuits and additionally, some wafers contained high current LDMOSFETs and bipolar structures such as Lateral Insulated Gate Bipolar Transistors. All these devices were used as test structures to investigate the effect of additional post-CMOS processing such as CNT growth, membrane formation, high temperature annealing, etc. Electrical characterisation of the devices with CNTs were performed along with SEM and Raman spectroscopy. The CNTs were grown both at low and high temperatures, the former being compatible with Aluminium metallization while the latter being possible through the use of the high temperature CMOS metallization (Tungsten). In both cases we have found that there is no change in the electrical behaviour of the CMOS devices, circuits or the high current devices. A slight degradation of the thermal performance of the CMOS microhotplates was observed due to the extra heat dissipation path created by the CNT layers, but this is expected as CNTs exhibit a high thermal conductance. In addition we also observed that in the case of high temperature CNT growth a slight degradation in the manufacturing yield was observed. This is especially the case where large area membranes with a diameter in excess of 500 microns are used.

This paper describes a novel photocathode which is an array of vertically aligned multi-walled carbon nanotubes (MWCNTs), each MWCNT being associated with one p-i-n photodiode. Unlike conventional photocathodes, the functions of photon-electron conversion and subsequent electron emission are physically separated. Photon-electron conversion is achieved with p-i-n photodiodes and the electron emission occurs from the MWCNTs. The current modulation is highly efficient as it uses an optically controlled reconfiguration of the electric field at the MWCNT locations. Such devices are compatible with high frequency and very large bandwidth operation and could lead to their application in compact, light and efficient microwave amplifiers for satellite telecommunication. To demonstrate this new photocathode concept, we have fabricated the first carbon nanotube based photocathode using silicon p-i-n photodiodes and MWCNT bunches. Using a green laser, this photocathode delivers 0.5 mA with an internal quantum efficiency of 10% and an I(ON)/I(OFF) ratio of 30.

The direct deposition of carbon nanotubes on CMOS microhotplates is demonstrated in this paper. Tungsten microhotplates, fabricated on thin SOI membranes aside CMOS control circuitry, are used to locally grow carbon nanotubes by chemical vapour deposition. Unlike bulk heating of the entire chip, which could cause degradation to CMOS devices and interconnects due to high growth temperatures in excess of 500 °C, this novel technique allows carbon nanotubes to be grown on-chip in localized regions. The microfabricated heaters are thermally isolated from the rest of the CMOS chip as they are on the membranes. This allows carbon nanotubes to be grown alongside CMOS circuitry on the same wafer without any external heating, thus enabling new applications (e.g. smart gas sensing) where the integration of CMOS and carbon nanotubes is required.

When a carbon nanotube emitter is operated at high currents (typically above 1 microA per emitter), a small voltage drop ( approximately few volts) along its length or at its contact generates a reverse/canceling electric field that causes a saturation-like deviation from the classical Fowler-Nordheim behavior with respect to the applied electric field. We present a correction to the Fowler-Nordheim equation to account for this effect, which is experimentally verified using field emission and contact electrical measurements on individual carbon nanotube emitters. By using rapid thermal annealing to improve both the crystallinity of the carbon nanotubes and their electrical contact to the substrate, it is possible to reduce this voltage drop, allowing very high currents of up to 100 microA to be achieved per emitter with no significant deviation from the classical Fowler-Nordheim behavior.

To communicate, spacecraft and satellites rely on microwave devices, which at present are based on relatively inefficient thermionic electron sources that require heating and cannot be switched on instantaneously. Here we describe a microwave diode that uses a cold-cathode electron source consisting of carbon nanotubes and that operates at high frequency and at high current densities. Because it weighs little, responds instantaneously and has no need of heating, this miniaturized electron source should prove valuable for microwave devices used in telecommunications.

The figure of merit for the electron optical performance of carbon-nanotube (CNT) electron sources is presented. This figure is given by the relation between the reduced brightness and the energy spread in the region of stable emission. It is shown experimentally that a CNT electron source exhibits a highly stable emission process that follows the Fowler-Nordheim theory for field emission, fixing the relationship among the energy spread, the current, and the radius. The performance of the CNT emitter under realistic operating conditions is compared with state-of-the-art electron point sources. It is demonstrated that the reduced brightness is a function of the tunneling parameter, a measure of the energy spread at low temperatures, only, independent of the geometry of the emitter.

We describe the nanofabrication study of self-aligned electrodes on suspended multiwalled carbon nanotube structures. When metal is deposited on a suspended multiwalled carbon nanotube structure, the nanotube acts as an evaporation mask, resulting in the formation of discontinuous electrodes. The metal deposits on the nanotubes are removed with lift-off. Using Al sacrificial layers, it was possible to fabricate self-aligned contact electrodes and control electrodes nanometers from the suspended carbon nanotubes with a single lithography step. It was also shown that the fabrication technique may also be used to form nano-gapped contact electrodes. The technique should prove useful for the fabrication of nano-electromechanical systems.

Ultraviolet-visible absorption measurements of high purity and well separated carbon onion samples are reported. The results show that, after purification, absorption features from carbon onions match well with the interstellar UV spectrum. The measurements show that the absorption peak position remains constant at 4.55+/-0.1 microm(-1), and the width varies from 1.2-1.6 microm(-1), a key feature of the interstellar spectrum. The similarities between the experimental and observed absorption spectra indicate that carbon onions are very strong candidates for the origin of the UV interstellar absorption peak at 4.6 microm(-1).