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Silicon neutron detectors can operate at low voltage and come with ease of fabrication and the possibility of integration of readout electronics and thus are attractive from an application point of view. In this paper, we have studied thermal neutron capture by silicon diodes coated with boron carbide (B4C). One of the surfaces of the diodes was covered with either natural B4C ( n a t B4C) or with enriched B4C ( e n B4C). We have investigated: (a) the effect of increase in the sensitive area of the surface of the diode covered with B4C on the neutron detection efficiency and (b) the effect of enrichment of 10B in B4C. The difference in 10B in n a t B4C (16 at. % in the deposited film) and e n B4C ( 79 at. % in the deposited film) leads to about three times increase in detection efficiency of the same detector. For the given experimental conditions, we do not observe a direct relationship between increase in the surface area and the detection efficiency. Energy spectra obtained by Geant4 simulations support the experimental observation of finding no direct relation between increase in the surface area and the detection efficiency.

Vertex detectors for the next LHC experiments upgrades will need to have low mass while at the same time be radiation hard and with sufficient granularity to fulfil the physics challenges of the next decade. Based on the gained experience with 3D silicon sensors for the ATLAS IBL project and the on-going developments on light materials, interconnectivity and cooling, this paper will discuss possible solutions to these requirements.

3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. The IBL collaboration, following that recommendation from the review panel, decided to complete the production of planar and 3D sensors and endorsed the proposal to build enough modules for a mixed IBL sensor scenario where 25% of 3D modules populate the forward and backward part of each stave. The production of planar sensors will also allow coverage of 100% of the IBL, in case that option was required. This paper will describe the processing strategy which allowed successful 3D sensor production, some of the Quality Assurance (QA) tests performed during the pre-production phase and the production yield to date.

A demonstrator of the portable position sensitive neutron detecting device for neutron imaging in a mixed radiation field is presented. A detector of the device is based on multilayer perpendicularly crossed strip sensors interlaced with neutron converter. A 6LiF converter producing energetic alpha particles and tritons is used. The converter permits precise determination of a position of the neutron interaction even in a radiation fields with a high gamma background. The neutron detection efficiency is increased with a 3D structured surface of the multilayer silicon strip sensor. The demonstrator is comprised of the neutron sensitive multilayer silicon strip detector, a 128 channel general purpose charge sensitive amplifier ASICs IDEAS VATAGP8 with nominal dynamic range of +/− 250 fC, a 13 bit analogue to digital conversion and an FPGA control. Basic characteristics of the amplifier like amplifier linearity probed with an external charge generator is shown. Moreover, results of experimental tests of the demonstrator with alpha, beta, gamma sources and neutrons is demonstrated. The device may be used for neutron imaging via position sensitive detection of particular neutrons on the basis of coincidence detection of neutron conversion products or on the basis of response comparison of individual strips. An effect of charge sharing between individual strips on position resolution will be elaborately discussed.

We present here the latest results from tests performed at the ESRF ID17 and ID21 beamlines for the characterization of novel beam monitors for Microbeam Radiation Therapy (MRT), which is currently being implemented at ID17. MRT aims at treating solid tumors by exploiting an array of evenly spaced microbeams, having an energy spectrum distributed between 27 and 600 keV and peaking at 100 keV. Given the high instantaneous dose delivered (up to 20 kGy/s), the position and the intensity of the microbeams has to be precisely and instantly monitored. For this purpose, we developed dedicated silicon microstrip beam monitors. We have successfully characterized them, both with a microbeam array at ID17, and a submicron scanning beam at ID21. We present here the latest results obtained in recent tests along with an outlook on future developments.

Among the new emerging cancer therapies, Microbeam Radiation Therapy (MRT) is currently showing very promising results in terms of limiting or decreasing tumor growth while keeping the damage to healthy tissue to a minimum. The MRT is able to deliver unprecedented dose rates of up to 20 kGy/s, posing important questions in terms of treatment planning and patient safety during treatment. For this reason, a beam monitoring system must be built, in which a detector acquires the microbeam array profile in real-time. In case of anomalies detection, the detector signals the beam-line to close the shutter as an emergency safety measure. Many sensors technologies for beam monitoring are currently being considered and silicon strip detectors seem to be very promising candidates. In this study the characterisation in full MRT conditions of a novel silicon strip detector is reported explaining strengths and weaknesses of the devices. Modifications to the sensor layout are also suggested in this study.

3D silicon sensors, where electrodes penetrate the silicon substrate fully or partially, have successfully been fabricated in different processing facilities in Europe and USA. The key to 3D fabrication is the use of plasma micro-machining to etch narrow deep vertical openings allowing dopants to be diffused in and form electrodes of pin junctions. Similar openings can be used at the sensor's edge to reduce the perimeter's dead volume to as low as ∼4 μm. Since 2009 four industrial partners of the 3D ATLAS R&D Collaboration started a joint effort aimed at one common design and compatible processing strategy for the production of 3D sensors for the LHC Upgrade and in particular for the ATLAS pixel Insertable B-Layer (IBL). In this project, aimed for installation in 2013, a new layer will be inserted as close as 3.4 cm from the proton beams inside the existing pixel layers of the ATLAS experiment. The detector proximity to the interaction point will therefore require new radiation hard technologies for both sensors and front end electronics. The latter, called FE-I4, is processed at IBM and is the biggest front end of this kind ever designed with a surface of ∼4 cm 2 . The performance of 3D devices from several wafers was evaluated before and after bump-bonding. Key design aspects, device fabrication plans and quality assurance tests during the 3D sensors prototyping phase are discussed in this paper.

For the purpose of withstanding very high radiation doses, silicon pixel sensors with a `3D' electrode geometry are being developed. Detectors of this kind are highly interesting for harch radiation environments such as expected in the High Luminosity LHC, but also for space physics and medical applications. In this paper, prototype sensors developed at SINTEF are presented and results from tests in a pion beam at CERN are given. These tests show that these 3D sensors perform as expected with full efficiency at bias voltages between 5 and 15V. For the purpose of withstanding very high radiation doses, silicon pixel sensors with a 3D electrode geometry are being developed. Detectors of this kind are highly interesting for harch radiation environments such as expected in the High Luminosity LHC, but also for space physics and medical applications. In this paper, prototype sensors developed at SINTEF are presented and results from tests in a pion beam at CERN are given. These tests shows that these 3D sensors perform as expected with full efficiency at bias voltages between 5 and 15V.

In this paper, 3D-electrode pixel detectors are described, in which the bias electrode systems have additional elements. Adding resistors between the bias supply line and each bias electrode together with a signal electrode readout that can measure pulse heights of both polarities could simultaneously provide lower capacitance and improved spatial resolution in both directions. A separate paper (“Dual-readout—strip/pixel systems”) covers an alternative—pixels with an added strip readout in one direction which could be used with either planar or 3D-electrodes, and could simultaneously provide a fast trigger and significantly increase the spatial resolution in both directions.

3D-electrode pixel detectors are proposed in which the bias electrodes are connected to form a strip readout on the same or opposite side of the sensor. It can provide a fast trigger and significantly increase spatial resolution in both directions. This combination is also possible with double-sided processing in planar technology. A second paper (“Dual Readout—3D Direct/Induced-Signals Pixel Systems”) will cover another means of increasing spatial resolution without duplicating the complex pixel electronics.

The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.

The Micro-Beam Radiation Therapy (MRT) is a promising newly emerged cancer treatment currently under development at the European Synchrotron Radiation Facility (ESRF) in Grenoble, France. Several safety requirements must be complied with, prior to the human clinical trials of the MRT such as the ability to send a signal to the emergency beam shutter in case of any beam anomalies, in order to avoid exposing the patient to excess radiation. This will require a beam monitor that can work under the demanding operating conditions of the MRT. A good candidate for this application is a silicon strip detector. A novel device layout has been proposed and numerical simulations were performed to carry out the optimisation of design and fabrication at SINTEF MiNaLab, Oslo, Norway. Simulation results and preliminary electrical measurements on wafer level are reported and discussed.

A study of charge collection in SINTEF 3D active edge silicon detectors was carried out at ANSTO using Ion Beam Induced Charge (IBIC) technique. An IBIC study has shown that several different geometries of 3D detectors have full depletion under low applied bias. The effect of fast neutron and gamma radiation on their charge collection efficiency was also investigated. A 3D active edge silicon detector technology has demonstrated extremely promising performance for application of the 3D Sensitive Volumes (SVs) fabrication methods to SOI microdosimetry.

The ATLAS Collaboration will upgrade its semiconductor pixel tracking detector with a new Insertable B-layer (IBL) between the existing pixel detector and the vacuum pipe of the Large Hadron Collider. The extreme operating conditions at this location have necessitated the development of new radiation hard pixel sensor technologies and a new front-end readout chip, called the FE-I4. Planar pixel sensors and 3D pixel sensors have been investigated to equip this new pixel layer, and prototype modules using the FE-I4A have been fabricated and characterized using 120 GeV pions at the CERN SPS and 4 GeV positrons at DESY, before and after module irradiation. Beam test results are presented, including charge collection efficiency, tracking efficiency and charge sharing., Comment: 45 pages, 30 figures, submitted to JINST

3D silicon sensors, where electrodes penetrate fully or partially through the silicon substrate, have been successfully fabricated in different processing facilities in Europe and the USA. They key to 3D fabrication is the use of plasma micromachining to etch narrow deep vertical openings which allow dopants to be diffused in and form the electrodes of the p-i-n junctions. Similar openings can be used at the sensor's edge to reduce the perimeter's dead area to be as narrow as 4 μm. Since 2009, four fabrication facilities of the 3D ATLAS R&D Collaboration started a joint effort aimed at one common design and compatible processing strategy for the production of 3D sensors for the LHC Upgrade and in particular for the ATLAS pixel Insertable B-Layer (IBL). In this project where the installation is aimed for 2013, a new layer will be inserted as close as 3.4 cm from the proton beams inside the existing pixel layers of the ATLAS experiment. The detector proximity to the interaction point will therefore require new radiation hard technologies for both sensors and front-end electronics. The latter, called FE-I4 is processed at IBM and is the biggest front end of its kind, with a surface area of about 4 cm2. This paper will discuss some design aspects, and the different approaches taken by the facilities. Results from both the qualification runs and the current production runs for the IBL are also reported.

The paper describes fabrication and testing of X-ray silicon edge-on detectors with active edge. In the edge-on strip detector configuration the photons are impinging on the chip edge and is absorbed parallel to the strip. The longer absorption length results in much higher quantum efficiency than face-on detectors (front-lluminated). To extend the sensitivity to ≤ 5keV the guard ring at one edge is replaced by an active edge made by 3D-processing. Test results with 241Am and 57Co sources are presented. Also it is shown that increasing the thickness to 2mm increases the efficiency at 122keV due to increased contribution from Compton events.

The fabrication of 3D detectors which requires bulk micromachining of columnar electrodes has been realized with advancements in MEMS technology. Since the fabrication of the first 3D prototype in Stanford Nanofabrication Facility in 1997, a significant effort has been put forth to transfer the 3D detector technology to large scale manufacturing for future high luminosity collider experiments, in which the radiation hardness will be the primary concern, and other applications such as medical imaging and X-ray imaging for molecular biology. First, alternative 3D structures, single type column (STC) and double-side double type column (DDTC) 3D detectors, were produced at FBK-irst (Trento, Italy) and CNM-Barcelona (Spain), and assessed thoroughly to improve the production technology towards the standard full-3D detectors. The 3D collaboration has been extended to include SINTEF (Norway), which is committed to small to medium scale production of active edge full-3D silicon sensors. This paper focuses on p-type 3D detectors compatible with the CMS pixel front end electronics from the second run of fabrication at SINTEF clean room facilities. The sensors that passed the wafer level electrical characterization have been bump-bonded at IZM (Germany), assembled into modules and wire-bonded for functional characterization at Purdue University. We report the leakage current characteristics, bump-bond quality, threshold, noise, and gain measurement results of these 3D modules as well as the preliminary beam test data taken at Fermi National Accelerator Laboratory. © 2011 IEEE.

A silicon particle-telescope system for light-ion nuclear reactions is described. In particular, the system is designed to be optimized for level density and gamma-ray strength function measurements with the so-called Oslo method. Eight trapezoidal modules are mounted at 5 cm distance from the target, covering 8 forward angles between theta = 40 and 54 degrees. The thin front dE detectors (130 micrometer) are segmented into eight pads, determining the reaction angle for the outgoing charged ejectile. Guard rings on the thick back E detectors (1550 micrometer) guarantee low leakage current at high depletion voltage., Comment: 6 pages, 8 figures

In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. The mission statement of the CERN RD50 Collaboration is the development of radiation-hard semiconductor devices for very high luminosity colliders. As a consequence, the aim of the RandD programme presented in this article is to develop silicon particle detectors able to operate at sLHC conditions. Research has progressed in different areas, such as defect characterisation, defect engineering and full detector systems. Recent results from these areas will be presented. This includes in particular an improved understanding of the macroscopic changes of the effective doping concentration based on identification of the individual microscopic defects, results from irradiation with a mix of different particle types as expected for the sLHC, and the observation of charge multiplication effects in heavily irradiated detectors at very high bias voltages. © 2011 Elsevier B.V.

The Super-LHC upgrade puts strong demands on the radiation hardness of the innermost tracking detectors of the CMS, which cannot be fulfilled with any conventional planar detector design. The so-called 3D detector architectures, which feature columnar electrodes passing through the substrate thickness, are under investigation as a potential solution for the closest operation points to the beams, where the radiation fluence is estimated to reach 10(16) n(eq)/Tcm(2). Two different 3D detector designs with CMS pixel readout electronics are being developed and evaluated for their advantages and drawbacks. The fabrication of full-3D active edge CMS pixel devices with p-type substrate has been successfully completed at SINTEF. In this paper, we study the expected post-irradiation behaviors of these devices with simulations and, after a brief description of their fabrication, we report the first leakage current measurement results as performed on wafer.

3D detectors with electrodes penetrating through the entire silicon substrate have many advantages over conventional planar silicon technology, for example, high radiation tolerance. High aspect ratio through-wafer holes are essential in such fabrication, and deep reactive ion etching (DRIE) is used. A series of DRIE processes were tested and optimised to achieve the required aspect ratio, and in 5-μm wide trenches, aspect ratios of 58:1 were achieved © 2009 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works

Microbeam Radiation Therapy (MRT) is an emerging cancer treatment that is currently being developed at the European Synchrotron Radiation Facility (ESRF) in Grenoble, France. This technique uses a highly collimated and fractionated X-ray beam array with extremely high dose rate and very small divergence, to benefit from the dose-volume effect, thus sparing healthy tissue. In case of any beam anomalies and system malfunctions, special safety measures must be installed, such as an emergency safety shutter that requires continuous monitoring of the beam intensity profile. Within the 3DMiMic project, a novel silicon strip detector that can tackle the special features of MRT, such as the extremely high spatial resolution and dose rate, has been developed to be part of the safety shutter system. The first prototypes have been successfully fabricated, and experiments aimed to demonstrate their suitability for this unique application have been performed. Design, fabrication and the experimental results as well as any identified inadequacies for future optimisation are reported and discussed in this paper., 23 pages, 16 figures

Neutron detection is a valuable tool in nuclear science research, homeland security, quality assurance in nuclear plants and medical applications. Recent developments and near future instrumentations in neutron imaging have a need for sensors with high spatial resolution, dynamic range, sensitivity and background discrimination. Silicon based neutron detectors can potentially fulfil these requirements. In this work, pad and pixel detectors with pyramidal micro-structures have been successfully fabricated that should have an improved detection efficiency when compared to conventional planar devices. Titanium di-boride (TiB2) and lithium fluoride (LiF) were deposited as the neutron converters. Excellent electrical performances were measured on both simple pad and pixel detectors. A selection of pad detectors was examined by alpha spectroscopy. Measurement with thermal neutrons from a 241Am-Be source shows an improvement in relative efficiency of up to 38% when compared to conventional planar devices.

3D-detectors, with electrodes penetrating through the entire substrates have drawn great interests for high energy physics and medical imaging applications. Since its introduction by C. Kenney et al in 1995, many laboratories have begun research on different 3D-detector structures to simplify and industrialise the fabrication process. SINTEF MiNaLab joined the 3D collaboration in 2006 and started the first 3D fabrication run in 2007. This is the first step in an effort to fabricate affordable 3D-detectors in small to medium size production volumes. The first run was fully completed in February 2008 and preliminary results are promising. Good p-n junction characteristics have been shown on selected devices at the chip level with a leakage current of less than 0.5 nA per pixel. Thus SINTEF is the second laboratory in the world after the Stanford Nanofabrication Facility that has succeeded in demonstrating full 3D-detectors with active edge. A full 3D-stacked detector system were formed by bump-bonding the detectors to the ATLAS readout electronics, and successful particle hit maps using an Am-241 source were recorded. Most modules, however, showed largely increased leakage currents after assembly, which is due to the active edge and p-spray acting as part of the total chip pn-junction and not as a depletion stop. This paper describes the first fabrication and the encountered processing issues. The preliminary measurements on both the individual detector chips and the integrated 3D-stacked modules are discussed. A new lot has now been started on p-type wafers, which offers a more robust configuration with the active edge acting as depletion stop instead of part of the pn-junction.

Making silicon photodetectors for the UV- and blue spectral regions is not trivial due to the short penetration depth of high energy photons. In this paper we first present a theoretical discussion of the conditions for high UV- and blue sensitivity; then two actual devices are presented. First, we briefly present an earlier design based on charge inversion of p-type silicon and secondly a detector fabricated in n-type silicon by ion implantation. The quantum efficiency may be as high as 80% at 250 nm, which implies a quantum gain of 1.5, and 90% at 400 nm. The photoresponse can be tailored by changing the antireflection oxide thickness. These detectors may be interesting to high energy physics for instance as readout for scintillation counters. The ion implanted detectors have high breakdown voltage and extremely low leakage current. Typical leakage currents are 0.5–5 nA/cm2/100 μm which is at least as good as the state of art Kemmer detectors. Therefore, these detectors are also interesting for high energy particles and nuclear spectroscopy. As the detectors are sensitive to photons with less than 10 nm penetration depth, a very shallow dead layer, or window, at the surface is to be expected.

By using fiberoptics, it is possible to circumvent the serious packaging problems associated with conventional electric micro-tip pressure transducers for in vivo measurements in the human body. We have developed a practical fiberoptic micro-tip pressure transducer, named Fiber-Tip, which has been tested successfully in several clinical applications. Compared to electric micro-tip transducers, Fiber-Tip offers superior mechanical strength, galvanic insulation and better stability when measuring in body liquids.

A new technique using fiberoptic transducers for simultaneous registration of intravesical and urethral pressures during the physiological filling and voiding phases is described. The method, which is simple, exact and stable, was used on several patients with different urological problems. The study shows that the measurement technique and the fiberoptic transducer system are suited for clinical use.