Search

We report on room temperature, polarization-resolved Raman scattering measurements on layered crystals of the series MoSxSe(2-x) (0⩽x⩽2) grown by chemical vapor transport technique. The results reveal two distinct sets of features related to the E12g and A1g modes of pure members of series. As composition x changes, the in-plane E12gmode shows two-mode behavior, whereas the out-of-plane A1g mode presents more complex evolution. The MoSe2-like branch reveals the splitting associated with the altering arrangement of S and Se atoms around Mo and the resulting changes in the dipole moment of the molecule. The X-ray diffraction measurements confirm that the samples are single-phase materials of 2H-type structure over the entire range of the sulfide composition x, while the scanning transmission electron microscopy imaging reveals a random arrangement of the S and Se atoms. Modified random-element-isodisplacement model is adopted to predict the behavior of the individual modes in the alloys. The model successfully confirms the two-mode behavior exhibited by the MoSxSe(2-x) series. [ABSTRACT FROM AUTHOR]

The temperature dependence of the spectral features in the vicinity of the direct band edge of mixed-crystals Mo(SxSe1-x)2 solid solutions is measured in the temperature range of 25-295K by using piezoreflectance (PzR). The near band-edge excitonic transition energies of Mo(SxSe1-x)2 solid solutions were determined accurately from a detailed line-shape fit of the PzR spectra. The near band-edge excitonic transition energies were found to vary smoothly with the increase of S content x, indicating that the natures of the direct band edges of Mo(SxSe1-x)2 solid solutions are similar. The temperature dependences of near band edge transition energies were analyzed using Bose-Einstein expressions in the temperature range from 25 to 295 K. The parameters that described the temperature variation of the energies and broadening function of the excitonic transitions were evaluated and discussed. [ABSTRACT FROM AUTHOR]

A detailed optical characterization of a freestanding wurtzite semi-insulating Fe-doped GaN (SI-GaN:Fe) grown by hydride-vapor-phase-epitaxy was carried out by photoluminescence (PL) and contactless electroreflectance (CER) at 10 and 300 K, respectively, and photoreflectance at 300 K. Low-temperature PL spectrum of the Ga-face consisted of the Fe3+ impurity characteristic series of IR peaks with a sharp zero-phonon line (ZPL) at 1.299 eV, yellow and blue broad emission bands, and near-band-edge (NBE) emission in the ultraviolet region. The narrow linewidth of 135 μeV of the ZPL and the measured energy difference of ∼70 meV between the ZPL and E2 (high) phonon replica, which is sensitive to the lattice strain, shows good crystal quality and a strain-free incorporation of iron. The obtained transition energies of A, B, and C excitonic features in the CER spectra and the n = 2 excited states (2s) of the A and B excitons enable the estimation of the exciton binding energies. In addition to the free excitonic recombination, the PL spectrum of the Ga-face exhibited clear donor and acceptor related features in the NBE region, while the N-face exhibited a broad emission band related to the free-to-bound recombination only. The differences were explained by the presence of impurity-induced band-tail states in the N-face SI-GaN:Fe due to an increased impurity density and the incorporation of large volume vacancy-type defects. [ABSTRACT FROM AUTHOR]

Photoluminescence (PL) and photoreflectance (PR) were used to characterize ZnxCd1-xSe/MgSe multiple quantum well (MQW) structures grown on InP substrates by molecular beam epitaxy for mid-infrared (IR) device applications. The PL spectra yielded information of the fundamental excitonic recombination and ZnxCd1-xSe cap/spacer band edge emission of the samples. The PR spectra revealed multitude of possible interband transitions in MQW structures. The ground state transitions were assigned by comparing with the PL emission signals taken from the same structures. A comprehensive analysis of the PR spectra led to the identification of various interband transitions. The intersubband transitions were then estimated and found to be in a good agreement with the previous report of Fourier-transform IR absorption measurements [Li et al., Appl. Phys. Lett. 92, 261104 (2008)]. The results demonstrate the potential of using PL and PR as nondestructive optical techniques for characterization of ZnxCd1-xSe/MgSe MQWs for mid-IR device applications. [ABSTRACT FROM AUTHOR]

In this study, anisotropic near band edge transitions of Cu2ZnSiS4 single crystals grown by chemical vapor transport were characterized by using polarization-dependent absorption, piezoreflectance (PzR) and surface photovoltage (SPV) spectroscopy techniques at room temperature. The measurements were carried out on the as grown basal plane with the normal along [2 1 0] and the axis c parallel to the long edge of the crystal platelet. Analysis of absorption and SPV spectra reveal indirect allowed transitions for the absorption edge of Cu2ZnSiS4. The estimated values of indirect band gap are 2.97 eV and 3.07 eV, respectively, for E⊥c and E∥c polarization configurations. The polarization-dependent PzR and SPV spectra in the vicinity of the direct band gap of Cu2ZnSiS4 reveal features E⊥ex and E∥ex at around 3.32 eV and 3.41 eV for E⊥c and E∥c polarizations, respectively. Both features E⊥ex and E∥ex are associated with the interband excitonic transitions at point Γ and can be explained by crystal-field splitting of valence band. Based on the experimental observations, a plausible band structure near band edge of Cu2ZnSiS4 is proposed. [ABSTRACT FROM AUTHOR]

An optical characterization of two wurtzite ZnCdMgSe crystalline alloys grown by the modified high-pressure Bridgman method was carried out by temperature-dependent photoluminescence (PL) and contactless electroreflectance (CER) in the temperature range of 10-300 K and photoreflectance (PR) measurements between 300-400 K. Low temperature PL spectra of the investigated samples consisted of the excitonic line, the 'edge-emission' due to radiative recombination of shallow donor-acceptor pairs and a broad band related to recombination through deep level defects. Three excitonic features, A, B, and C, in the vicinity of band edge were observed in the CER and PR spectra. The peak positions of band edge excitonic features in the PL spectra were shifted slightly toward lower energies as compared to the lowest corresponding transition energies of A exciton determined from CER and PR data. The increase in the CER-PL shift with the increasing of Mg content in the investigated crystals was explained by the rising of compositional disorder causing the smearing of the band edge energies. In addition, the parameters that describe the temperature dependence of the transition energies and broadening parameters of the band edge excitonic transitions were evaluated and discussed. [ABSTRACT FROM AUTHOR]

Highly strained InxGa1-xAs/GaAs double quantum well (DQW) structures grown by metal organic vapor phase epitaxy with different In compositions are investigated by surface photovoltage spectroscopy (SPS) in the temperature range 20–300 K. A lineshape fit of spectral features in the differential surface photovoltage (SPV) spectra determines the transition energies accurately. A comprehensive analysis of the anomalous phenomena appearing in lower temperature SPV spectra enable us to evaluate directly the band lineup of DQW and to remove the ambiguity in the identification of spectral features. The process of separation of carriers within the QW with possible capture by the interface defect traps plays an important role for phase change in SPV signal in the vicinity of light-hole related feature at low temperature. The results demonstrate the considerable diagnostic values of the SPS technique for characterizing these highly strained DQW structures. [ABSTRACT FROM AUTHOR]

Two thin epitaxial GaAs films on Ge substrates were characterized by photoluminescence (PL), contactless electroreflectance (CER), and piezoreflectance (PzR) techniques. The GaAs films containing antiphase domains (APDs) and those APD free were grown at 650 °C by metal organic vapor phase epitaxy. The PL intensity of the APD-containing film is four orders of magnitude lower than that of the APD-free sample. The reduction in intensity is due to the electrically active Ga–Ga and As–As bonds at the boundaries between the different APDs. The electric fields deduced from Franz–Keldysh oscillations of the CER spectra were used to determine the net carrier concentration of the GaAs films. In addition, the conduction to light-hole band transitions and the conduction to heavy-hole band transitions that originated from strain induced valence band splitting in GaAs thin films were observed and identified through a comparison of the relative intensities of light- and heavy-hole related features in the PzR and CER spectra. The results demonstrate that PL, CER, and PzR are useful nondestructive tools to characterize thin epitaxial GaAs films on Ge substrates. [ABSTRACT FROM AUTHOR]

We present photoreflectance (PR) and surface photovoltage spectroscopy (SPS) studies of GaAs1-xSbx/GaAs multiple quantum well structures with fundamental transition close to 1.3 μm. These two optical diagnostic tools are powerful supplementary techniques in the investigations of complicated quantum systems. PR gives detailed information about the heavy-holes related transitions, while SPS contains additional information concerning light-holes related ones. The comparison of experimental data and theoretical analysis based on the envelope function approximation, including strain and exciton binding energy, allows us to identify the observed PR and SPS features. The results point to the existence of weak type-I band alignment in samples being studied, and the Sb content dependent of conduction band offset is found to agree well with that reported by Wang et al. [Phys. Rev. B 70, 195339 (2004)]. [ABSTRACT FROM AUTHOR]

We report a detailed investigation of the temperature dependence of the band-edge excitonic transitions of three Zn1-x-yBexMgySe mixed crystals using contactless electroreflectance (CER) and photoreflectance (PR) in the temperature range of 15–400 K. The samples were grown by the modified high pressure Bridgman methods. The fundamental transition energy E0 and broadening parameters are determined via a lineshape function fit to the CER and PR spectra. The parameters that describe the temperature dependence of the band-edge excitonic transition energy and broadening parameters are evaluated and discussed. [ABSTRACT FROM AUTHOR]

In this paper, the optical properties of Au-doped rhenium diselenide (ReSe2:Au) single crystals have been reported. The doping effects of the material were characterized by polarization-dependent transmittance, piezoreflectance (PzR), and photoreflectance (PR) measurements in the temperature range of 15–300 K. The indirect energy gap of ReSe2:Au shows a slight redshift with respect to the undoped sample. The low temperature PzR and PR spectra reveal an E1ex feature at E∥b polarization as well as two features, E2ex and E3ex, at E⊥b polarization. The angular dependence of the excitonic feature amplitudes agrees well with Malus’ law. In comparison with the undoped ReSe2, the excitonic transition energies remain practically unchanged, while the broadening parameter of the excitonic transition features slightly increases due to impurity scattering. In addition, the parameters that describe the temperature variations of the band-edge excitonic transitions were evaluated and discussed. [ABSTRACT FROM AUTHOR]

Surface photovoltage (SPV) and photoluminescence excitation (PLE) spectroscopy have been used to characterize multiple stacked self-assembled InAs quantum dot (QD) structures with and without InGaAs overgrown layers. The SPV spectra contain rich optical features that originate from every relevant portion of the samples, including the QDs, wetting layer (WL), hybrid quantum well (HQW), and GaAs barrier. The excited state peak positions detected by PLE coincide with those from SPV measurements, which indicates that the QD ensembles are of monomodal distribution. The redshifts of the QD transitions have been attributed to the altered strain distribution, and the reduction in the linewidth of the WL signals indicates a partial alleviation of the surface roughness effect by the incorporation of InGaAs overgrown layers. An additional spectral feature situated between the highest lying QD state and the WL signals has been attributed to the electronic transition in the InAs/InGaAs dots-in-well structure. [ABSTRACT FROM AUTHOR]

A detailed optical characterization of Zn0.96Be0.04Se and Zn0.93Mg0.07Se mixed crystal samples grown by the modified high-pressure Bridgman method has been carried out via photoluminescence (PL), contactless electroreflectance (CER), and photoreflectance (PR) in the temperature range of 15–400 K. With these optical diagnostic tools we observed features originating from exciton emission, an edge emission due to recombination of shallow donor-acceptor pairs (DAPs), and a broad band related to recombination through deep-level defects, as well as band-edge and spin-orbit splitting critical points interband transitions in CER and PR experiments. The optical properties of these two mixed crystals are compared. Our comparative study revealed that the beneficial effect of beryllium (Be) incorporation is superior to that of magnesium (Mg), in the sense that a Be-containing ternary alloy resulted in better crystalline quality with more intense excitonic emission line and weaker DAPs and deep-level defect-related bands. The peak positions of the excitonic emission lines in the PL spectra correspond quite well to the energies of the fundamental transitions obtained by means of electromodulation spectra. The parameters that describe the temperature dependence of the fundamental and spin split-off band gaps, and the broadening function of the band-edge excitons, are evaluated and discussed. [ABSTRACT FROM AUTHOR]

We present an optical characterization of a Bridgman-grown zinc-blende-type Zn0.81Be0.04Mg0.15Se mixed crystal in the near-band-edge interband transitions using temperature-dependent photoluminescence (PL), contactless electroreflectance (CER), and photoreflectance (PR) in the temperature range of 15–400 K. Typical PL spectrum at low temperature consists of an exciton line, an edge emission due to recombination of shallow donor-acceptor pairs, and a broad band related to recombination through deep level defects. Interband transitions, originating from the band edge and spin-orbital splitting critical points of the sample, have been observed in the CER/PR spectra. The peak positions of the excitonic emission lines in the PL spectra correspond quite well to the energies of the fundamental transitions determined from electromodulation data. The parameters that describe the temperature dependence of the fundamental and spin split-off band gaps, and the broadening function of the band edge exciton are evaluated and discussed. [ABSTRACT FROM AUTHOR]

In this study, the optical properties of niobium-doped rhenium disulphide (ReS2:Nb) single crystals have been reported. The doping effects of the material were characterized by polarization-dependent transmittance, photoluminescence (PL), and piezoreflectance (PzR) measurements in the temperature range of 10–300 K. The indirect energy gap of ReS2:Nb shows a slight redshift with respect to the undoped sample. The low temperature PL spectra reveal two near direct band-edge excitonic peaks as well as two additional prominent features at higher energy side. The results agree well with that of the PzR investigation of the sample. In comparison with the undoped ReS2, the excitonic transition energies remain practically unchanged, while the broadening parameter of the excitonic transition features slightly increases due to impurity scattering. In addition, the parameters that describe the temperature variations of the band-edge excitonic transitions were evaluated and discussed. [ABSTRACT FROM AUTHOR]

A detailed optical characterization of a series of wurtzite-type Cd1-x-yBexZnySe mixed crystals grown by the modified high pressure Bridgman method has been carried out via photoluminescence (PL) and contactless electroreflectance (CER) in the temperature range of 15–300 K. Room temperature surface photovoltage spectroscopy has been used as a diagnostic technique for checking the surface condition of the sample. For the mechanically polished sample, the surface photovoltage spectrum at room temperature recorded a below band edge broad feature which is most likely related to the surface states induced by mechanical defect. This feature can be eliminated via mechanical polishing and followed by chemical etching, and hence, only the exciton line was observed for the damage-removed sample. Typical PL spectrum at low temperature consists of an exciton line, an edge emission due to recombination of shallow donor-acceptor pairs, and a broadband related to recombination through deep level defects. Various interband transitions, originating from the band edge and spin-orbit splitting critical points, of the samples have been observed in the CER spectra. Comparison of PL and CER data for the Cd1-x-yBexZnySe samples shows that for a low Zn and Be content the peak positions of the excitonic emission lines in the PL spectra correspond quite well to the transition energies of the A exciton from the CER data. For samples with higher Be and Zn contents, the results indicate that localization of excitons has taken place at low temperatures. The parameters that describe the temperature dependence of the transition energy and broadening parameter of the fundamental band edge exciton have been evaluated and discussed. [ABSTRACT FROM AUTHOR]

We report the observation of persistent photoconductivity (PPC) effect in 2H-MoSe2 layered semiconductors. The decay behavior of PPC can be well described by a stretch-exponential function. Experimental results indicate that the lattice relaxation of DX-like impurity is responsible for PPC in MoSe2. In addition, the small capture barrier created by lattice relaxation and the temperature-dependent resistance measurement exhibit that the magnitude of PPC effect in MoSe2 is small, consistent with the PPC behavior in indirect gap materials. [ABSTRACT FROM AUTHOR]

We report a detailed investigation of the temperature dependence of the edge excitonic transitions of three Bridgman-grown wurtzite-type Cd1-x-yBexZnySe-mixed crystals using contactless electroreflectance (CER) and photoreflectance (PR) in the temperature range of 15–400 K. X-ray investigations show that the samples with beryllium (Be) content up to x=0.1 are uniform in composition and exhibit a single wurtzite phase or a wurtzite as the main phase. The transition energies of the A,B, and C excitons of Cd1-x-yBexZnySe are determined via a line-shape fit to the CER and PR spectra. The parameters that describe the temperature dependence of the interband transition energies and the broadening function of the excitonic features are evaluated and discussed. [ABSTRACT FROM AUTHOR]

The coupling effect between the cavity mode and excitonic states in a GaAs/GaAlAs asymmetric microcavity structure was studied via angle and temperature dependent reflectance and piezoreflectance (PzR) measurements in the angular range 10°<θinc<60° and temperature range 20 K

An angle-dependent wavelength-modulated differential-photovoltage spectroscopy (DPVS) investigation has been performed at room temperature on a bare as-grown wafer of GaAs/ GaAlAs-based vertical-cavity surface-emitting laser (VCSEL) structure, designed for emitting at a wavelength near 850 nm. The differential-photovoltage (DPV) spectra exhibit both the fundamental conduction to heavy-hole excitonic transition and cavity mode plus an interference pattern related to the mirror stacks. By changing the angle of incidence in the DPV measurements the energy positions of the cavity mode and distributed Bragg reflector features show a blueshift while the excitonic transition remains unchanged. The energies of the excitonic transition and cavity mode are accurately determined from the DPV spectra. The advantages of DPVS in relation to other methods of characterizing VCSEL structures, such as surface photovoltage, photoreflectance, photocurrent, and differential photocurrent spectroscopy, are discussed. The results demonstrate considerable potential of DPVS for the nondestructive characterization of these structures at room temperature. [ABSTRACT FROM AUTHOR]

Temperature-dependent contactless electroreflectance (CER) and photoluminescence (PL) measurements in the range of 30 K

We have characterized an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure using polarized photoreflectance (PR) spectroscopy. The ordering parameter of the InGaP is deduced from the polarization {[110] and [11¯0]} dependence of the PR signals from the emitter region. The ordering related piezoelectric field is also found to influence the electric field, as evaluated from observed Franz–Keldysh oscillations, in the InGaP emitter region. The field in the emitter region is found to be about 25 kV/cm smaller than the theoretical value that does not take into account the possible ordering induced screening effect, while the field in the collector region agrees well with the theoretical value. In addition, the InGaAsN band gap is also determined by analyzing the PR spectrum of the base region. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]

The optical absorption of synthetic ReS[sub 2] and ReSe[sub 2] single crystals is reported over a temperature range from 25 to 300 K. Analysis reveals that the absorption edges of ReS[sub 2] and ReSe[sub 2] are indirect allowed transitions. The indirect band gaps at various temperatures are determined and their temperature dependence is analyzed by the Varshni equation [Physica 34, 149 (1967)] and an empirical expression proposed by O'Donnel and Chen [Appl. Phys. Lett. 58, 2924 (1991)]. The parameters that describe the temperature dependence of energy gaps of these two materials are evaluated and discussed. [ABSTRACT FROM AUTHOR]

Studies the temperature dependence of quantized states in a quantum well semiconductor heterostructure. Utilization of piezoreflectance and contactless electroreflectance measurements; Identification of excitonic transitions between the conduction band state and heavy band state; Evaluation of the parameters that describe temperature dependence.