Zolfaghari Borra, Mona, Radfar, Behrad, Nasser, Hisham, Çolakoğlu, Tahir, Tokel, Onur, Turnalı, Ahmet, Demirtaş, Merve, Işık Taşgın, Dilek, Üstünel, Hande, Toffoli, Daniele, İlday, Fatih Ömer, Turan, Raşit, Pavlov, Ihor, and Bek, Alpan
[Display omitted] • A special selective wet chemical etchant is developed and optimized for removal of subsurface laser modified c-Si. • The etch recipe is non-toxic while yielding smooth surfaces at a high etch rate and selectivity for laser-processed Si. • The champion etchant exhibits a selectivity of over 1600 times for laser modified c-Si with respect to unmodified c-Si. • Extremely high aspect ratios > 13 are achieved in 3D structuring of c-Si. • The etch rate and selectivity, as well as their calculations, are redefined to include 3D aspects both at the surface and the subsurface of c-Si. Recently-demonstrated high-quality three-dimensional (3D) subsurface laser processing inside crystalline silicon (c-Si) wafers opens a door to a wide range of novel applications in multidisciplinary research areas. Using this technique, novel maskless micro-pillars with precise control on the surface reflection and coverage are successfully fabricated by etching the laser-processed region of the c-Si wafer. To achieve this, a particular selective wet chemical etching is developed to follow subsurface laser processing of c-Si to reveal the desired 3D structures with smooth surfaces. Here, we report the development of a novel chromium-free chemical etching recipe based on copper nitrate, which yields substantially smooth surfaces at a high etch rate and selectivity on the both laser-processed Si surface and subsurface, i.e., without significant etching of the unmodified Si. Our results show that the etch rate and surface morphology are interrelated and strongly influenced by the composition of the adopted etching solution. After an extensive compositional study performed at room temperature, we identify an etchant with a selectivity of over 1600 times for laser-modified Si with respect to unmodified Si. We also support our findings using density functional theory calculations of HF and Cu adsorption energies, indicating significant diversity on the c-Si and laser-modified surfaces. [ABSTRACT FROM AUTHOR]