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Abstract Molybdenum disulfide (MoS2) is a promising electronic material owing to its excellent electrochemical features, high carrier mobility at room temperature, and widely tunable electronic properties. Here, through precursor engineering and post‐treatments to tailor their phase and doping, electronic characteristics of MoS2 are significantly modified. It is found that 2H semiconductor phase with nitrogen doping (N‐doping) in flexible gas sensors constructed with Ag electrodes exhibits the highest sensitivity of ≈2500% toward 10 ppm of NO2. This sensitivity is ≈17‐ and 417‐folds higher than that of 2H MoS2 without N‐doping, and mixed phases with metallic 1T and semiconductor 2H phase, respectively. Comprehensive experimental investigations reveal mechanisms underlying this record sensitivity, that is, the use of N‐doped 2H MoS2 sensors not only significantly suppresses dark current but also effectively enhances electron transfer to NO2 molecules. Moreover, density function theory calculations underpin the experimental results, confirming that N2H4 molecules from the precursor solution not only promote phase transition but also enable N‐doping during post‐treatments, thus boosting sensing capability. This work, for the first time, reveals the synergistic effect of phase modulation and N‐doping of MoS2, which can be readily used in other flexible electronic applications, advancing MoS2‐based electronics to a new stage.

Designing bio-inspired artificial neurons within a single device is challenging. Here, the authors demonstrate a spintronic neuron with leaky-integrate-fire and self-reset characteristics and corroborate a new trajectory of all-spin neuromorphic computing hardware holistic implementation.

Abstract Metal halide perovskites can be readily synthesized, they exhibit tunable physical properties and excellent performance, and they are heavily studied optoelectronic materials. Compared to the typical three-dimensional perovskites, morphological-level one-dimensional (1D) nanostructures enable charge transport and photon propagation with low exciton binding energies and long charge-carrier diffusion lengths, while molecular-level 1D nanostructures exhibit good compositional and structural flexibilities, highly tunable bandgaps, strong quantum confinement effects, and excellent ambient stabilities. The 1D natures of these emerging halide perovskites enhance the performance of optoelectronic devices. Herein, we highlight recent progress realized in the syntheses and characterizations of both morphological- and molecular-level 1D halide perovskites with tunable structures, compositions, and properties, as well as their photovoltaic, light-emission, and photodetection applications. In addition, current challenges, future prospects, and promising research directions are discussed to provide guidance in advancing the field of 1D perovskites.

Highlights Research progress on inorganic perovskites quantum dots is reviewed from three aspects: physical properties, synthesis approaches, and electronic applications. Inorganic perovskite quantum dots have been exploited as either the active layers or the additives in high-performance transistors and memories. Challenges and outlook on future advancement of perovskites quantum dots-based electronics are elaborated.

Developing scalable strategies of miniaturization and integration is key for achieving high-density integrated circuit devices. Here, the authors propose a silicon-based one-transistor device with a 40% reduction in circuit footprint, which combines the functionalities of logic gates, memory, and artificial synapses for mass production.

Abstract Solar‐driven photothermal water evaporation is considered an elegant and sustainable technology for freshwater production. The existing systems, however, often suffer from poor stability and biofouling issues, which severely hamper their prospects in practical applications. Conventionally, photothermal materials are deposited on the membrane supports via vacuum‐assisted filtration or dip‐coating methods. Nevertheless, the weak inherent material‐membrane interactions frequently lead to poor durability, and the photothermal material layer can be easily peeled off from the hosting substrates or partially dissolved when immersed in water. In the present article, the discovery of the incorporation of borophene into cellulose nanofibers (CNF), enabling excellent environmental stability with a high light‐to‐heat conversion efficiency of 91.5% and water evaporation rate of 1.45 kg m−2 h−1 under simulated sunlight is reported. It is also demonstrated that borophene papers can be employed as an excellent active photothermal material for eliminating almost 100% of both gram‐positive and gram‐negative bacteria within 20 min under three sun irradiations. The result opens a new direction for the design of borophene‐based papers with unique photothermal properties which can be used for the effective treatment of a wide range of wastewaters.

Abstract Recently lead halide perovskite based solar cells have rapidly advanced and their power conversion efficiency (PCE) increased to 25.7%. The progress has been attributed to the super‐long carriers’ lifetime (τ) and long diffusion length (LD) of the photocarriers, however it has been a challenge to precisely characterize and understand the super‐long τ and LD of photocarriers. Here, a MAPbI3 single crystal exhibits four different τ which increase with LD extending from nm scale to mm scale. The prior two lifetimes estimated by transient photoluminescence (TPL) spectra are in the range of ns which comes from the recombination of photocarriers in the tens of nm thick surface layer. In contrast, the third lifetime estimated by transient open‐circuit voltage is hundreds of µs, which is a result of the excess photocarriers diffusing hundreds of µm to electrodes. Finally, the fourth lifetime estimated from the transient photoconductance is as long as sub‐second since the low‐density photocarriers under an electric field drift across the mm‐scale high‐quality single crystal. This study not only clarifies the physical mechanisms of four different lifetimes of photocarriers but also facilitates the design of novel electronics with the halide perovskite semiconductors.

Halide perovskite heterojunctions rationally integrate the chemical and physical properties of multi-dimensional perovskites and judiciously chosen semiconductor materials, offering the promise of going beyond the limit of a single component. This emerging platform of materials innovation offers fresh opportunities to tune material properties, discover interesting phenomena, and enable novel applications. In this review, we first discuss the fundamentals of forming heterojunctions with perovskites and a wide range of semiconductors, and then we give an overview of the research progress of halide perovskite heterojunctions in terms of their optical, electrical, and mechanical properties, focusing on how the heterojunction tunes the energy band structure, electrical transport, and charge recombination behaviors. We further outline the progress of perovskite-based heterojunctions in optoelectronics. Finally, the challenges and future research directions for perovskite/semiconductor heterojunctions are discussed. Public summary: • Heterojunctions endow perovskites with diverse structures and desirable properties. • Heterojunctions bestow novel phenomena and exotic physical effects on perovskites. • Optoelectronic device performance can be greatly enhanced by heterojunctions.

Perovskite quantum dots film has better mechanical stability and structural integrity compared to bulk thin film. Here, the authors demonstrate higher endurance of quantum dot films and develop hybrid CsPbI3 QD/PCBM device with PCE of 15.1% and 12.3% on rigid and flexible substrates, respectively.

Current therapies for anthrax include the use of antibiotics (i.e., doxycycline, and ciprofloxacin), an anthrax vaccine (BioThrax) and Bacillus anthracis-specific, monoclonal antibody (mAb) (i.e., Raxibacumab and obiltoxaximab). In this study, we investigated the activity of immunomodulators, which potentiate inflammatory responses through innate immune receptors. The rationale for the use of innate immune receptor agonists as adjunctive immunomodulators for infectious diseases is based on the concept that augmentation of host defense should promote the antimicrobial mechanism of the host. Our aim was to explore the anti-B. anthracis effector function of Toll-like receptor (TLR) agonists using a mouse model. Amongst the six TLR ligands tested, Pam3CSK4 (TLR1/2 ligand) was the best at protecting mice from lethal challenge of B. anthracis. We then evaluated the activity of a novel TLR2 ligand, DA-98-WW07. DA-98-WW07 demonstrated enhanced protection in B. anthracis infected mice. The surviving mice that received DA-98-WW07 when re-challenged with B. anthracis 20 days post the first infection showed increased survival rate. Moreover, ciprofloxacin, when treated in adjunct with a suboptimal concentration of DA-98-WW07 demonstrated augmented activity in protecting mice from B. anthracis infection. Taken together, we report the prophylactic treatment potential of DA-98-WW07 for anthrax and the utility of immunomodulators in combination with an antibiotic to treat infections caused by the B. anthracis bacterium.

Abstract Structural defects are ubiquitous for polycrystalline perovskite films, compromising device performance and stability. Herein, a universal method is developed to overcome this issue by incorporating halide perovskite quantum dots (QDs) into perovskite polycrystalline films. CsPbBr3 QDs are deposited on four types of halide perovskite films (CsPbBr3, CsPbIBr2, CsPbBrI2, and MAPbI3) and the interactions are triggered by annealing. The ions in the CsPbBr3 QDs are released into the thin films to passivate defects, and concurrently the hydrophobic ligands of QDs self‐assemble on the film surfaces and grain boundaries to reduce the defect density and enhance the film stability. For all QD‐treated films, PL emission intensity and carrier lifetime are significantly improved, and surface morphology and composition uniformity are also optimized. Furthermore, after the QD treatment, light‐induced phase segregation and degradation in mixed‐halide perovskite films are suppressed, and the efficiency of mixed‐halide CsPbIBr2 solar cells is remarkably improved to over 11% from 8.7%. Overall, this work provides a general approach to achieving high‐quality halide perovskite films with suppressed phase segregation, reduced defects, and enhanced stability for optoelectronic applications.

The two-dimensional electron gases that form at LaAlO3/SrTiO3 heterostructure interfaces feature strong spin-orbit interactions, leading to proposed spintronic applications. Lin et al. show that the design of asymmetric heterostructures enables the Rashba spin-orbit interaction to be tuned between two regimes.

Abstract The surface chemistry of colloidal quantum dots (CQD) play a crucial role in fabricating highly efficient and stable solar cells. However, as‐synthesized PbS CQDs are significantly off‐stoichiometric and contain inhomogeneously distributed S and Pb atoms at the surface, which results in undercharged Pb atoms, dangling bonds of S atoms and uncapped sites, thus causing surface trap states. Moreover, conventional ligand exchange processes cannot efficiently eliminate these undesired atom configurations and defect sites. Here, potassium triiodide (KI3) additives are combined with conventional PbX2 matrix ligands to simultaneously eliminate the undercharged Pb species and dangling S sites via reacting with molecular I2 generated from the reversible reaction KI3 ⇌ I2 + KI. Meanwhile, high surface coverage shells on PbS CQDs are built via PbX2 and KI ligands. The implementation of KI3 additives remarkably suppresses the surface trap states and enhances the device stability due to the surface chemistry optimization. The resultant solar cells achieve the best power convention efficiency of 12.1% and retain 94% of its initial efficiency under 20 h continuous operation in air, while the control devices with KI additive deliver an efficiency of 11.0% and retains 87% of their initial efficiency under the same conditions.

Abstract Halide perovskite quantum dots (PQDs) are promising materials for diverse applications including displays, light‐emitting diodes, and solar cells due to their intriguing properties such as tunable bandgap, high photoluminescence quantum yield, high absorbance, and narrow emission peaks. Despite the prosperous achievements over the past several years, PQDs face severe challenges in terms of stability under different circumstances. Currently, researchers have overcome part of the stability problem, making PQDs sustainable in water, oxygen, and polar solvents for long‐term use. However, halide PQDs are easily degraded under continuous irradiation, which significantly limits their potential for conventional applications. In this study, an oleic acid/oleylamine (traditional surface ligands)‐free method to fabricate perovskite quantum dot papers (PQDP) is developed by adding cellulose nanocrystals as long‐chain binding ligands that stabilize the PQD structure. As a result, the relative photoluminescence intensity of PQDP remains over ≈90% under continuous ultraviolet (UV, 16 W) irradiation for 2 months, showing negligible photodegradation. This proposed method paves the way for the fabrication of ultrastable PQDs and the future development of related applications.

Electric field controlled magnetism provides an energy efficient way for the operations in the spintronic devices. Here the authors show strain induced, reversible, nonvolatile electric field control of magnetization and magnetoresistance in a magnetic tunnel junction on a ferroelectric substrate at room temperature and zero magnetic field.

The methylammonium lead halide perovskites have shown excellent optoelectronic properties but the field-effect transistors are much less studied. Here Yu et al. synthesize micrometer-thin crystals of perovskites with low surface contamination and make ambipolar transistor devices with high mobilities.

Coupling graphene with narrow band-gap Ti2O3 nanoparticles can enable efficient mid-infrared photodetection. Here, the authors report a graphene-Ti2O3 based hybrid photodetector with high responsivity of ~300 A W-1 up to 10 μm by varying the number of graphene layers and size of Ti2O3 nanoparticles.

Hierarchical, nanoporous graphitic membranes are synthetically challenging yet attractive materials, due to their structural integrity. Here, the authors fabricate freestanding, porous carbon membranes with single-crystal-like graphitic order which serve as water splitting electrocatalysts upon cobalt doping.

Lead halide perovskites are developed for a number of optoelectronic applications. Here, Cho et al. use a thermal gradient to achieve directional crystallization of methyl ammonium lead iodide films. The periodic microarrays exhibit anisotropic charge transport properties.

Tunnelling electroresistance is the variation of resistance of a thin-film junction with the polarization state of its ferroelectric tunnel barrier. Here the authors demonstrate a large light-modulated tunnelling electroresistance and a hysteretic photovoltaic effect in a complex oxide heterostructure.

The title salt, [Mn(C2H6OS)6]I4, is made up from discrete [Mn(DMSO)6]2+ (DMSO is dimethyl sulfoxide) units connected through non-classical hydrogen bonds to linear I42− tetraiodide anions. The MnII ion in the cation, situated on a position with site symmetry -3., is octahedrally coordinated by O atoms of the DMSO molecule with an Mn—O distance of 2.1808 (12) Å. The I42− anion contains a neutral I2 molecule weakly coordinated by two iodide ions, forming a linear centrosymmetric tetraiodide anion. The title compound is isotypic with the Co, Ni, Cu, and Zn analogues.

We report on the tunable photovoltaic effect of self-doped single-crystal SrTiO3 (STO), a prototypical perovskite-structured complex oxide, and evaluate its performance in Schottky junction solar cells. The photovaltaic characteristics of vacuum-reduced STO single crystals are dictated by a thin surface layer with electrons donated by oxygen vacancies. Under UV illumination, a photovoltage of 1.1 V is observed in the as-received STO single crystal, while the sample reduced at 750 °C presents the highest incident photon to carrier conversion efficiency. Furthermore, in the STO/Pt Schottky junction, a power conversion efficiency of 0.88% was achieved under standard AM 1.5 illumination at room temperature. This work establishes STO as a high-mobility photovoltaic semiconductor with potential of integration in self-powered oxide electronics.

We present THz conductivity of LaAlO3 (LAO) as a function of temperature and annealing, using terahertz time-domain spectroscopy (THz-TDS). We observed that, after annealing, spectral weight redistribution occurs, such that the real conductivity σ1(ω) changed from a featureless and almost frequency-independent spectrum, into one where peaks occur near the phonon frequencies. These phonon frequencies increase with increasing temperature. We attribute the appearance of these absorption peaks to the diffusion and relocation of oxygen vacancies. The dielectric functions of annealed LAO are well fitted with the Drude-Lorentz model.

We report the fabrication and characterizations of oxide heterojunctions composed of TbMnO3 thin films grown on conducting Nb:SrTiO3 substrates. The heterojunctions exhibit rich rectifying characteristics, depending on not only the measurement temperature but also the growth temperature: at 300 K, good rectification appears in both samples; at lower temperatures, the rectification is much smaller in the sample grown at 700 °C, whereas it exhibits a reversed bias dependence and reaches ∼5000 in the sample grown at 780 °C. Regarding to the transport mechanism, the conduction appears to be Schottky-emission-like at high temperatures in both junctions, indicating well-defined band alignment at interface; on the other hand, the space-charge-limited mechanism dictates the low temperature transport. Furthermore, the temperature and frequency dependent capacitance-loss data suggest that the transport dynamics is associated with multiple thermally activated relaxation processes. Finally, transmission electron microscopy studies shed light on the crystalline quality of the junction interfaces, which is believed to dictate the corresponding transport properties.

Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO_{3}/SrTiO_{3} heterostructures, where the conducting layer near the LaAlO_{3}/SrTiO_{3} interface serves as the “unconventional” bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO_{3}/SrTiO_{3} interface and the creation of defect-induced gap states within the ultrathin LaAlO_{3} layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

Genetic heterogeneity in tumors can show a remarkable selectivity when two or more independent genetic events occur in the same gene. This phenomenon, called composite mutation, points toward a selective pressure, which frequently causes therapy resistance to mutation‐specific drugs. Since composite mutations have been described to occur in sub‐clonal populations, they are not always captured through biopsy sampling. Here, we provide a proof of concept to predict composite mutations to anticipate which patients might be at risk for sub‐clonally driven therapy resistance. We found that composite mutations occur in 5% of cancer patients, mostly affecting the PIK3CA, EGFR, BRAF, and KRAS genes, which are common precision medicine targets. Furthermore, we found a strong and significant relationship between the frequencies of composite mutations with commonly co‐occurring mutations in a non‐composite context. We also found that co‐mutations are significantly enriched on the same chromosome. These observations were independently confirmed using cell line data. Finally, we show the feasibility of predicting compositive mutations based on their co‐mutations (AUC 0.62, 0.81, 0.82, and 0.91 for EGFR, PIK3CA, KRAS, and BRAF, respectively). This prediction model could help to stratify patients who are at risk of developing therapy resistance‐causing mutations.