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This work reports a novel, simple, and resist-free chemo-epitaxy process permitting the directed self-assembly (DSA) of lamella polystyrene-block-polymethylmethacrylate (PS-b-PMMA) block copolymers (BCPs) on a 300 mm wafer. 193i lithography is used to manufacture topographical guiding silicon oxide line/space patterns. The critical dimension (CD) of the silicon oxide line obtained can be easily trimmed by means of wet or dry etching: it allows a good control of the CD that permits finely tuning the guideline and the background dimensions. The chemical pattern that permits the DSA of the BCP is formed by a polystyrene (PS) guide and brush layers obtained with the grafting of the neutral layer polystyrene-random-polymethylmethacrylate (PS-r-PMMA). Moreover, data regarding the line edge roughness (LER) and line width roughness (LWR) are discussed with reference to the literature and to the stringent requirements of semiconductor technology.

Directed Self-Assembly (DSA) of Block Copolymers (BCP) by chemo-epitaxial alignment is a promising high resolution lithography technique compatible with CMOS high-volume manufacturing. It allows overcoming limitations in resolution and local stochasticity by conventional, imaging based, lithography. However, for BCP with pitches below 20 nm and guide patterning by immersion lithography (193i), multiplication factors ≥ 4 become necessary, imposing stringent requirements on the guides and defectivity becomes hard to control. The Arkema-CEA (ACE) process flow overcomes this limit by creating the guides by a self-aligned double patterning (SADP) process flow, followed by the deposition of a cross-linkable neutral mat and selective grafting of the guides. This paper reports on the transfer of the process flow to immersion lithography, details challenges encountered in process optimization, notably the dependence of the wetting of the neutral layer on the surface energy and the morphology of the spacers. Last, the paper presents a metrology and defectivity roadmap combined with preliminary, promising results.

Block copolymers (BCPs) are emerging as a cost-effective nanofabrication tool to complement conventional optical lithography because they self-assemble in highly ordered polymeric templates with well-defined sub-20-nm periodic features. In this context, cylinder-forming polystyrene-block-poly(methyl methacrylate) BCPs are revealed as an interesting material of choice because the orientation of the nanostructures with respect to the underlying substrate can be effectively controlled by a poly(styrene-random-methyl methacrylate) random copolymer (RCP) brush layer grafted to the substrate prior to BCP deposition. In this work, we investigate the self-assembly process and lateral order evolution in RCP + BCP systems consisting of cylinder-forming PS-b-PMMA (67 kg mol–1, PS fraction of ∼70%) films with thicknesses of 30, 70, 100, and 130 nm deposited on RCP brush layers having thicknesses ranging from 2 to 20 nm. The self-assembly process is promoted by a rapid thermal processing machine operating at 250 °C fo...

The orientation of block copolymer (BCP) features in thin films can be obtained by spin-coating a BCP solution on a substrate surface functionalized by a polymer brush layer of the appropriate random copolymer (RCP). Although this approach is well established, little work reporting the amount and distribution of residual solvent in the polymer film after the spin-coating process is available. Moreover, no information can be found on the effect of trapped solvent on the interface between the BCP film and RCP brush. In this work, systems consisting of poly(styrene)-b-poly(methyl methacrylate) thin films deposited on poly(styrene-r-methyl methacrylate) brush layers are investigated by combining neutron reflectivity (NR) experiments with simulation techniques. An increase in the amount of trapped solvent is observed by NR as the BCP film thickness increases accompanied by a significant decrease of the interpenetration length between the BCP and RCP, thus suggesting that the interpenetration between grafted chains and block copolymer chains is hampered by the solvent. Hybrid particle-field molecular dynamics simulations of the analyzed system confirm the experimental observations and demonstrate a clear correlation between the interpenetration length and the amount of trapped solvent.

Directed Self-Assembly (DSA) of Block Copolymer (BCP) is a promising lithography approach to achieve high resolution pattern dimensions. The current chemo-epitaxy process used to induce block copolymer self-alignment is showing today its limitations. This is due to the resolution limitation of conventional lithography technics needed for the guide formation, used to achieve BCP alignment. This paper introduces a new chemo-epitaxy process, named ACE (Arkema-CEA), which is based on sidewall image transfer (SIT) patterning. This process has the great advantage to offer guides of small critical dimension (CD) and pitch that allows the integration of high χ BCP. In this paper, different parameters of the ACE process are investigated (commensurability, spacer CD …) in order to precisely determine the DSA process window defining the best conditions for BCP alignment. Process window with multiplication factor ranging from 2 to 4 are obtained on BCP under investigation.

Functional hydroxyl-terminated poly(styrene-r-methyl methacrylate) (P(S-r-MMA)) copolymers (RCPs) are becoming key materials to control the substrate wetting characteristics not only for the conventional polystyrene-b-poly(methyl methacrylate) (PS-b-PMMA) block copolymers (BCPs) but also for high χ BCP systems. This paper reports the thermal stability of RCPs at fixed composition as a function of molar mass and at fixed molar mass as a function of composition. Distinct and sometimes opposite dependencies were observed when the samples were analyzed in bulk, in the form of thermally untreated thin films featuring different thicknesses and in the form of brush layers after the grafting process performed at different temperatures. The overall picture of these effects is useful for optimizing the thermal processing conditions of the various steps involved in BCP-based pattern transfer technology.

Hydroxyl terminated poly(styrene-r-methyl methacrylate) (P(S-r-MMA)) random copolymers (RCPs), with molecular weight (Mn) spanning from 1700 to 69 000 g mol−1 and equal styrene unit content, were grafted at different temperatures onto a silicon oxide surface and subsequently used to study the orientation of nanodomains with respect to the substrate, in cylinder forming polystyrene-b-poly(methyl methacrylate) (PS-b-PMMA) block copolymer thin films. When the grafting temperature increases from 250 to 310 °C, a substantial increase in the grafting rate is observed. In addition, an increase in the surface neutralization efficiency occurs thus resulting in an increase in the robustness of the surface neutralization step. These data revealed that the neutralization of the substrate is the result of a complex interplay between RCP film characteristics and underlying substrate properties that can be finely tuned by properly adjusting the temperature of the grafting process. © 2016 Society of Chemical Industry

The self-assembly of block copolymer (BCP) thin films produces dense and ordered nanostructures. Their exploitation as templates for nanolithography requires the capability to control the lateral order of the nanodomains. Among a multiplicity of polymers, the widely studied all-organic polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) BCP can easily form nanodomains perpendicularly oriented with respect to the substrate, since the weakly unbalanced surface interactions are effectively neutralized by grafting to the substrate an appropriate poly(styrene-random-methyl methacrylate) P(S-r-MMA) random copolymer (RCP). This benefit along with the selective etching of the PMMA component and the chemical similarity with the standard photoresist materials deserved for PS-b-PMMA the role of BCP of choice for the technological implementation in nanolithography. This work demonstrates that the synergic effect of thermal annealing with the initial solvent naturally trapped in the basic RCP + BCP system after the deposition process can be exploited to enhance the lateral order. The solvent content embedded in the total RCP + BCP system can be tuned by changing the molecular weight and thus the thickness of the grafted RCP brush layer, without introducing external reservoirs or dedicated setup and/or systems. The appropriate supply of solvent supports a grain coarsening kinetics following a power law with a 1/3 growth exponent for standing hexagonally ordered cylinders.

The morphological evolution of cylinder-forming poly(styrene)-b-poly(methyl methacrylate) block copolymer (BCP) thick films treated at high temperatures in the rapid thermal processing (RTP) machine was monitored by means of in-depth grazing-incidence small-angle X-ray scattering (GISAXS). The use of this nondisruptive technique allowed one to reveal the formation of buried layers composed of both parallel-and perpendicular-oriented cylinders as a function of the film thickness (24 700 nm, the two interfaces are completely decoupled, and the formation of a superficial layer of about 50 nm composed of perpendicular cylinders is observed. Furthermore, the through-film morphology affects the nanodomain long-range order, which substantially decreases in correspondence with the beginning of the decoupling process. When the thick samples are exposed to longer thermal treatments, an increase in the long-range order of the nanodomains occurs, without any sensible variation of the thickness of the superficial layer.

Cylinder forming PS-b-PMMA block copolymer (BCP) thin films were deposited on pre-patterned surfaces with densely packed and nanometer wide trenches defined by conventional top down approaches and arranged to form a periodic grating. The films were subsequently annealed at 250 °C for times ranging from 30 s to 900 s in a rapid thermal processing device and their morphology evolution within the topographically defined structures was systematically investigated. Irrespective of the surface neutralization, an irreversible orientational flipping of the BCP microdomains inside the trenches was observed and attributed to de-swelling of the polymeric film as a consequence of a progressive desorption of the solvent retained inside the film. Systematic investigation of the annealing process indicates that the flipping is strongly dependent on the geometric parameters of the trenches and on the relative position of the analysed trench with respect to the periodic topographic structure. © 2014 The Royal Society of Chemistry.

Block copolymer (BCP) self-assembly is expected to complement conventional optical lithography for the fabrication of next-generation microelectronic devices. In this regard, silicon-containing BCPs with a high Flory-Huggins interaction parameter (χ) are extremely appealing because they form high-resolution nanostructures with characteristic dimensions below 10 nm. However, due to their slow self-assembly kinetics and low thermal stability, these silicon-containing high-χ BCPs are usually processed by solvent vapor annealing or in solvent-rich ambient at a low annealing temperature, significantly increasing the complexity of the facilities and of the procedures. In this work, the self-assembly of cylinder-forming polystyrene-block-poly(dimethylsiloxane-random-vinylmethylsiloxane) (PS-b-P(DMS-r-VMS)) BCP on flat substrates is promoted by means of a simple thermal treatment at high temperatures. Homogeneous PS-b-P(DMS-r-VMS) thin films covering the entire sample surface are obtained without any evidence of dewetting phenomena. The BCP arranges in a single layer of cylindrical P(DMS-r-VMS) nanostructures parallel-oriented with respect to the substrate. By properly adjusting the surface functionalization, the heating rate, the annealing temperature, and the processing time, one can obtain correlation length values larger than 1 μm in a time scale fully compatible with the stringent requirements of the microelectronic industry.

Binary homopolymer blends of two hydroxyl-terminated polystyrene (PS-OH) and polymethylmethacrylate (PMMA-OH) homopolymers (Mn ~ 16000 g mol−1) were grafted on SiO2 substrates by high-temperature (T > 150 °C), short-time (t < 600 s) thermal treatments. The resulting brush layer was tested to screen preferential interactions of the SiO2 substrate with the different symmetric and asymmetric PS-b-PMMA block copolymers deposited on top of the grafted molecules. By properly adjusting the blend composition and the processing parameters, an efficient surface neutralization path was identified, enabling the formation, in the block copolymer film, of homogeneous textures of lamellae or cylinders perpendicularly oriented with respect to the substrate. A critical interplay between the phase segregation of the homopolymer blends and their grafting process on the SiO2 was observed. In fact, the polar SiO2 is preferential for the PMMA-rich phase that forms a homogeneous layer on the substrate, while the PS-rich phase i...

Hydroxyl-terminated P(S-r-MMA) random copolymers with molecular weight ranging from 1.7 to 69 kg/mol and a styrene unit fraction of 61% were grafted onto a silicon oxide surface and subsequently used to study the orientation of domains with respect to the substrate, in cylinder-forming PS-b-PMMA block copolymer thin films. When the thickness (H) of the grafted layer is greater than 5−6 nm, a perpendicular orientation is always observed because of the efficient decoupling of the BCP film from the polar SiO2 surface. Conversely, if H is less than 5 nm, the critical thickness of the grafted layer, which allows the neutralization of the substrate and promotion of the perpendicular orientation of the nanodomains in the BCP film, is found to depend on the Mn of the RCP. In particular, when Mn = 1700, a 2.0 nm thick grafted layer is sufficient to promote the perpendicular orientation of the PMMA cylinders in the PS-b-PMMA BCP film.

Synthesis of nanopatterned magnetic materials offers advanced capabilities in tailoring material structures and opens up new opportunities for engineering innovative devices (i.e. electronic and biomedical). In the frame of magnetic materials, the most demanding application consists in fabricating high-density arrays for use in data storage and magnetic sensors for spintronics [1]. In the last decade, many routes for the reliable fabrication of magnetic nanostructures have been extensively investigated, including top-down lithography and bottom-up self-assembly processes. Conventional electron beam lithography (EBL) soon turned out to be limited by low-speed and high costs while self-assembling emerged as a viable and handy alternative technique for designing nanostructures over a wide area on magnetic thin films.

Two strategies are envisioned to improve the thermal stability of the grafted layer and to allow the processing of the random copolymer/block copolymer (RCP/BCP) system at high temperature. From one side, a high-temperature thermal treatment of a commercial a-hydroxyl omega-2,2,6,6-tetramethylpiperidinyloxy functional RCP, namely, TR58, leads to the formation of a stabilized layer able to induce the perpendicular orientation of a symmetric BCP to temperatures higher than 310 degrees C. On the other side, an alpha-hydroxyl omega-Br functional RCP, namely, BrR58, with the same molar mass and composition of TR58, was prepared by activator regenerated by electron transfer atom transfer radical polymerization. The resulting brush layer can sustain the self-assembly of the symmetric BCP for processing temperatures as high as 330 degrees C. In both systems, the disruption of the BCP film, deposited on the grafted RCP layer, occurs because of the formation of bubbles, due to a low-temperature evolution of monomers from the RCP layer. The extent of the low-temperature monomer evolution is higher for TR58 than it is for BrR58 and starts at lower temperatures. For both copolymers, the thermal treatment offsets the low-temperature monomer evolution while still maintaining surface characteristics suitable to induce the perpendicular orientation of the BCPs, thus ultimately extending the range of processing temperatures of the BCP film and consequently speeding the self-organization process.

The ordering process of asymmetric PS-b-PMMA block copolymers (BCPs) is investigated on flat SiO2 surfaces and on topographically patterned substrates. The topographic patterns consist of periodic gratings of 10 trenches defined by conventional top-down approaches and subsequently neutralized using a P(S-r-MIvIA) random copolymer (RCP). When the ordering process is accomplished on a flat surface at a temperature ranging between 180 and 230 degrees C, cylindrical microdomains perpendicularly oriented with respect to the substrate are observed irrespective of annealing temperature. In contrast, when the ordering process occurs on topographically patterned substrates, different phenomena have to be considered. The simultaneous effect of the flow around the gratings and the BCP flux from the zone located between adjacent trenches (mesa) into the inner part of the trenches results in significant thickness variations of the confined BCP film. Therefore, the amount of BCP inside the trenches depends on the width of the mesa region, which acts as a BCP reservoir. Moreover, within each trench group, the BCP thickness progressively decreases from the external to the central trenches composing the periodic grating. The thickness variation of the BCP film within the trenches strongly affects the ordering process, ultimately leading to different orientations of the microdomains within the trenches. In particular, when the annealing temperature is 190 degrees C a precise confinement of the BCP within the trenches featuring a perpendicular cylinder morphology is observed. At higher temperatures, mixed or parallel orientations of the microdomains are obtained depending on the width of the trenches in the periodic grating.

Hydroxyl-terminated P(S-r-MMA) random copolymers (RCPs) with molecular weights (M-n) from 1700 to 69000 and a styrene unit fraction of approximately 61% were grafted onto a silicon oxide surface and subsequently used to study the orientation of nanodomains with respect to the substrate, in cylinder-forming PS-b-PMMA block copolymer (BCP) thin films. When the thickness (H) of the grafted layer is greater than 5-6 nm, a perpendicular orientation is always observed because of the efficient decoupling of the BCP film from the polar SiO2 surface. Conversely, if H is less than 5 nm, the critical thickness of the grafted layer, which allows the neutralization of the substrate and promotion of the perpendicular orientation of the nanodomains in the BCP film, is found to depend on the M-n of the RCP. In particular, when Mn = 1700, a 2.0 nm thick grafted layer is sufficient to promote the perpendicular orientation of the PMMA cylinders in the PS-b-PMMA BCP film. A proximity shielding mechanism of the BCP molecules from the polar substrate surface, driven by chain stretching of the grafted RCP molecules, is proposed.

Polymeric materials are widely employed to build up tunable nanomasks for nano-patterning technologies. Ultrathin polymer layers are involved in this process. A Thermo Gravimetric Analysis-Mass Spectrometry (TGA-GC-MS) method was optimised, validated and successfully applied to investigate the thermal behavior of ultrathin poly(styrene-r-methylmethacrylate) random copolymer layers P(S-r-MMA) grafted to a silicon wafer surface. The interface between TGA and MS is highly versatile since many instrumental parameters (i.e. loop volumes, pulsed sampling frequencies, acquisition modalities, carrier gases, flow rates) can be easily tuned. Samples featuring substantial scale difference, i.e. bulk materials, thick films (few pm thickness), thin and ultrathin films (few nm thickness) can be analyzed without any instrumental modification or sample pretreatments. The TGA-GC-MS analysis was used to highlight subtle differences in samples featuring different thicknesses, in the 2-6 nm range, and subjected to various thermal treatments, thus indicating that this hyphenated technique could be successfully applied to the investigation of ultrathin polymer films. (C) 2014 Elsevier B.V. All rights reserved.

Tailoring surface energies is the key factor to control the orientation of nanoscopic structures in thin block copolymer (BCP) films. In the general frame of the "grafting to" approach, this paper reports on the use of Rapid Thermal Processing (RTP) technology to perform flash grafting reactions of a hydroxyl terminated poly(styrene-r-methylmethacrylate) random copolymer to the activated silicon wafer surface. The perpendicular orientation of the cylindrical morphology of an asymmetric PS-b-PMMA block copolymer is achieved when the thickness of the random copolymer layer is higher than 6.0 nm. The grafting time to achieve this thickness reduces from about 750 s, when the RTP grafting process is performed at 230 °C, to 15 s at 310 °C. For a symmetric PS-b-PMMA block copolymer, the perpendicularly oriented lamellar morphology is obtained when the random layer thickness is higher than 3.5 nm, that is after 60 s RTP grafting time at 250 °C. In addition, TGA-GC-MS analysis indicates that a chain structural reorganization, which occurs during the RTP treatment at high temperature, affords a more stable film structure without changing its surface characteristics. In conclusion, the RTP technology allows the "grafting to" approach to be successfully integrated into the next generation lithographic processes and affords the unprecedented opportunity to study the grafting of macromolecules on time scales and in temperature ranges that have never been explored before, shedding new light on the early stages and on the dynamics of these processes. This journal is © the Partner Organisations 2014.

The self-assembly of asymmetric polystyrene-b-poly(methyl methacrylate) (PS-b-PMMA) block copolymer based nanoporous thin films over a broad range of molar mass (M-n) between 39 kg.mol(-1) and 205 kg.mol(-1) is obtained by means of a simple thermal treatment. In the case of standard thermal treatments, the self-assembly process of block copolymers is hindered at small M-n by thermodynamic limitations and by a large kinetic barrier at high M-n. We demonstrate that a fine tuning of the annealing parameters, performed by a Rapid Thermal Processing (RTP) machine, permits us to overcome those limitations. Cylindrical features are obtained by varying M-n and properly changing the corresponding annealing temperature, while keeping constant the annealing time (900 s), the film thickness (similar to 30 nm), and the PS fraction (similar to 0.7). The morphology, the characteristic dimensions (i.e., the pore diameter d and the pore-to-pore distance L-0), and the order parameter (i.e., the lattice correlation length xi) of the samples are analyzed by scanning electron microscopy and grazing-incidence small-angle X-ray scattering, obtaining values of d ranging between 12 and 30 nm and L-0 ranging between 24 and 73 nm. The dependence of L-0 as a 0.67 power law of the number of segments places these systems inside the strong segregation limit regime. The experimental results evidence the capability to tailor the self-assembly processes of block copolymers over a wide range of molecular weights by a simple thermal process, fully compatible with the stringent constraints of lithographic applications and industrial manufacturing.

The control of the self-assembly (SA) process and nanostructure orientation in diblock copolymer (DBC) thick films is a crucial technological issue. Perpendicular orientation of the nanostructures in symmetric and asymmetric poly(styrene)-b-poly(methyl methacrylate) (PS-b-PMMA) block copolymer films obtained by means of simple thermal treatments was demonstrated to occur in well-defined thickness windows featuring modest maximum values, thus resulting in low aspect ratio (h/d < 2) of the final lithographic mask. In this manuscript, the thickness window corresponding to the perpendicular orientation of the cylindrical structures in asymmetric DBC is investigated at high temperatures (190 °C

The pattern coarsening dynamics in symmetric polystyrene-b-polymethylmethacrylate (PS-b-PMMA) block copolymer thin films under conventional thermal treatments is extremely slow, resulting in limited correlation length values even after prolonged annealing at relatively high temperatures. This study describes the kinetics of symmetric block copolymer microphase separation when subjected to a thermal treatment based on the use of a Rapid Thermal Processing (RTP) system. The proposed methodology allows self-organization of symmetric PS-b-PMMA thin films in few seconds, taking advantage of the amount of solvent naturally trapped within the film during the spinning process. Distinct and self-registered morphologies, coexisting along the sample thickness, are obtained in symmetric PS-b-PMMA samples, with periodic lamellae laying over a hexagonal pattern of PMMA cylinders embedded in the PS matrix and perpendicularly oriented with respect to the substrate. The ordering dynamics and morphological evolution of the coexisting dual structures are delineated and the intimate mechanism of the self-assembly and coarsening processes is discussed and elucidated.

Self-assembling block copolymers generate nanostructured patterns which are useful for a wide range of applications. In this paper we demonstrate the capability to control the morphology of the self-assembling process of PS-b-PMMA diblock copolymer thin films on unpatterned surfaces by means of fast thermal treatment performed in a rapid thermal processing machine. The methodology involves the use of radiation sources in order to rapidly drive the polymeric film above the glass transition temperature. Highly ordered patterns were obtained for perpendicular-oriented cylindrical and lamellar PS-b-PMMA block copolymers in less than 60 s. This approach offers the unprecedented opportunity to investigate in detail the kinetics of the block copolymer self-assembly during the early stages of the process, providing a much deeper understanding of the chemical and physical phenomena governing these processes.

This study addresses the thermal stability and degradation path of symmetric and asymmetric PS-b-PMMA block copolymers, widely employed to generate templates for nanopatterned materials, and of the associated P(S-r-MMA) random copolymers, through a combination of TGA and TGA-GC-MS techniques. The monomer evolution under isothermal and dynamic conditions was able to delineate the thermal degradation characteristics of all the copolymers. Although the temperature corresponding to the maximum of the main monomer loss is similar for the random and block copolymers, the onset of the main degradation for the random copolymers is observed at a temperature about 50 degrees C lower than the one for the block copolymers. In addition, the degradation profile of the random copolymers is highly asymmetrical in the low temperature side. This is partially due to the presence of TEMPO end groups, which behave as weak links. The successive evolution of the two monomers in the random copolymers occurs in a parallel fashion, indicating the occurrence of depolymerization via an unzipping process. In contrast, in case of the block copolymers, the two chemically different blocks depolymerize at different temperatures due to their distinct thermal stabilities and different end groups nature. Considering the overall system, comprising the block copolymer film on the grafted random copolymer layer, the monomer volatilization which occurs when the random copolymer is heated at temperatures equal or above 280 degrees C, leads to a reduced control of morphology orientation in the microdomains of the block copolymer film with an eventual local detachment of the block copolymer films. These results clearly indicate that the range of accessible temperature in the processing of these self-assembling materials is mainly limited by the instability of the grafted RCP layer.

The phase behaviour in thin films of an asymmetric polystyrene-b-polymethylmethacrylate (PS-b-PMMA) block copolymer with a molecular weight of 39 kg mol 1 was assessed at a wide range of temperatures and times. Cylindrical PMMA structures featuring a diameter close to 10 nm and perpendicularly oriented with respect to the substrate were obtained at 180 degrees C in relatively short annealing times (t