1. Development of Long-Length BMO-Doped REBCO Coated Conductors by Hot-Wall PLD Process
- Author
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Yasuhiro Iijima, Shogo Muto, Shinji Fujita, Tatsunori Okada, Kazuomi Kakimoto, Y. Adachi, Tomo Yoshida, Satoshi Awaji, Takanobu Kiss, Wataru Hirata, M. Igarashi, and Kunihiro Naoe
- Subjects
Materials science ,Doping ,Analytical chemistry ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,Pulsed laser deposition ,Magnetic field ,Magnetization ,0103 physical sciences ,Homogeneity (physics) ,Growth rate ,Critical current ,Electrical and Electronic Engineering ,010306 general physics ,0210 nano-technology ,Electrical conductor - Abstract
Fujikura Ltd., Chiba, Japan, has developed stable and high-throughput production techniques for REBCO coated conductors (CC) by using large-area ion-beam-assisted-deposition (IBAD), and hot-wall type pulsed-laser-deposition (PLD). Recently, we have been attempting to dope BaMO 3 (BMO, M: Zr or Hf) to REBCO layer in order to enhance in-field critical current density (J c ). In the course of optimizing deposition conditions of PLD for BaHfO 3 doped EuBCO films on IBAD templates, “high J c condition” and “high growth rate condition” were found. For samples prepared under these conditions, the magnetic field angle dependence of I c and REBCO thickness dependence were investigated. Finally, we succeeded in fabricating a 300-m-long CC with uniform I c distribution at the high-growth-rate condition. The longitudinal I c homogeneity (defined as standard deviation divided by average) at 77 K evaluated by magnetization method was 2.6%, which is comparable to nondoped conductors. Transport in-field I c for the both end points were 1756 and 1786 A/cm at 30 K, 2 T, respectively.
- Published
- 2018
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