122 results on '"Tong, Xiaodong"'
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2. The application of tumor cell-derived vesicles in oncology therapy
3. Preliminary Study Investigating Brain Shift Compensation using 3D CBCT Cerebral Vascular Images
4. High voltage charge pump circuit using vertical parallel plate capacitors.
5. Preliminary Study Investigating Brain Shift Compensation using 3D CBCT Cerebral Vascular Images
6. The application of tumor cell-derived vesicles in oncology therapy
7. The Study of 0.34 THz Monolithically Integrated Fourth Subharmonic Mixer Using Planar Schottky Barrier Diode
8. Robust GaN-Based LNAs With Active Epitaxial Current Limiters
9. Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD
10. Reducing the reverse leakage current of AlGaN/GaN heterostructures via low-fluence neutron irradiation
11. An 18–56-GHz Wideband GaN Low-Noise Amplifier With 2.2–4.4-dB Noise Figure
12. Low-Noise Amplifiers Using 100-nm Gate Length GaN-on-Silicon Process in W-Band
13. An 18–31-GHz GaN-Based LNA With 0.8-dB Minimum NF and High Robustness
14. Acceptor Decoration of Threading Dislocations in (Al,Ga)N/GaN Heterostructures
15. Early stage degradation related to dislocation evolution in neutron irradiated AlGaN/GaN HEMTs
16. Experimental and theoretical study on device-processing-incorporated fluorine in AlGaN/GaN heterostructures
17. A 45‐61 GHz monolithic microwave integrated circuit subharmonic mixer incorporating dual‐band power divider
18. Preparative applications of magnetic separation in biology and medicine
19. Degradation of Ka-Band GaN LNA Under High-Input Power Stress: Experimental and Theoretical Insights
20. A 23‐31 GHz gallium nitride high‐robustness low‐noise amplifier with 1.1‐dB noise figure and 28‐dBm saturation output power
21. A 23–31 GHz Robust Low-Noise Amplifier with 1.1 dB Noise Figure and 28 dBm Psat
22. Defect evolution of oxygen induced Vth-shift for ON-state biased AlGaN/GaN HEMTs
23. Proceedings of the 14th European Microwave Integrated Circuits Conference Degradation of Ka band GaN Low-Noise Amplifier under High Input Power Stress
24. Enzymic Thin Film Coatings for Bioactive Materials
25. A 15 – 34 GHz Robust GaN based Low-Noise Amplifier with 0.8dB Minimum Noise Figure
26. Assessing the Role of Fluorine in the Performance of AlxGa1−xN/GaN High-Electron-Mobility Transistors from First-Principles Calculations
27. Ka band LNA and PA based on 100 nm GaN/Si HEMT process
28. A 24.5-27 GHz GaN Power Amplifier MMIC with 4 W Maximum Saturation Output Power
29. Non-ebeam AlGaN/GaN HEMTs with $f_{\max}$ of 206 GHz for Mass Production
30. 23.5‐30 GHz gallium nitride on silicon power amplifier MMIC with 7.6‐12.4 W saturation output power
31. A 22–30-GHz GaN Low-Noise Amplifier With 0.4–1.1-dB Noise Figure
32. High voltage charge pump circuit using vertical parallel plate capacitors
33. 23-31GHz Low Noise Amplifier with 2.5dB NF Using 100 nm GaN on Silicon Technology
34. A 7W 23–30GHz Power Amplifier in a 100-nm GaN on Si technology
35. 18-31 GHz GaN wideband low noise amplifier (LNA) using a 0.1 μm T-gate high electron mobility transistor (HEMT) process
36. A 23‐31 GHz gallium nitride high‐robustness low‐noise amplifier with 1.1‐dB noise figure and 28‐dBm saturation output power.
37. Defect evolution of oxygen induced Vth-shift for ON-state biased AlGaN/GaN HEMTs.
38. 18–31 GHz GaN MMIC LNA using a 0.1 um T-gate HEMT process
39. Fabrication and characterization of 8.87 THz schottky barrier mixer diodes for mixer
40. A GaAs Planar Schottky Barrier Diode (PSBD) and its application in terahertz integrated mixers
41. Studying on source/drain contact resistance reduction for InP-based HEMT
42. On substrate dopant engineering for ET-SOI MOSFETs with UT-BOX
43. A novel PNPN bipolar selector for RRAM array application
44. Mitigation of Reverse Short-Channel Effect With Multilayer TiN/Ti/TiN Metal Gates in Gate Last PMOSFETs
45. On substrate dopant engineering for ET-SOI MOSFETs with UT-BOX
46. Field Experimental Study on Vertical Bearing Capacity of Root-Caisson Foundation
47. A Vertically Integrated Capacitorless DRAM Cell
48. Two-terminal vertical memory cell for cross-point static random access memory applications
49. Design of two-terminal PNPN diode for high-density and high-speed memory applications
50. A vertically integrated capacitorless memory cell
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