244 results on '"Tsai, Jeng-Han"'
Search Results
2. A 27–43 GHz CMOS Body-Biased Digital Current-Steering VGA With 4 Bit and Low Phase Shift
3. A V-band VCO using ft-doubling technique in 0.18-mum CMOS
4. An ultra low-power 24 GHz phase-lock-loop with low phase-noise VCO embedded in 0.18mum CMOS process
5. A 28-nm CMOS Sub-Volt PA With High Power Density and Common-Mode Stability Design
6. A 5.3-GHz 30.1-dBm Fully Integrated CMOS Power Amplifier With High-Power Built-In Linearizer
7. A 24-GHz 65-nm CMOS 3-D Radial and Vertically Stacked Transmitter Front-End IC for Vital-sign Detection Radar Applications
8. A 19-GHz High Sideband Suppression Single Sideband Up-Conversion Mixer
9. A 19GHz 5-Bit Low RMS Phase Error Passive Phase Shifter Using 0.18μm CMOS Process
10. A 38 GHz Ultra-Compact High Power Density CMOS Power Amplifier
11. A Broadband MFCW Agile Radar Concept for Vital-Sign Detection Under Various Thoracic Movements
12. On-chip power-combining techniques for mm-wave silicon power amplifiers
13. A 27–44 GHz CMOS Dual-Ring Subharmonic Up-Conversion Mixer With Linearization Technique
14. A 19.7–38.9-GHz Ultrabroadband PA With Phase Linearization for 5G in 28-nm CMOS Process
15. A 19-GHz 5-Bit Switch-Type Phase Shifter Design Using Phase Compensation Techniques
16. A 28-GHz Class-F Power Amplifier with 4096-QAM OFDM Under -36.2 dBc EVM in 28-nm CMOS Technology
17. A Gain Enhancement Structure Using 28-nm CMOS Process for V-band Power Amplifier Applications
18. A K/Ka-Band Low RMS Phase Error 5-Bit CMOS Phase Shifter
19. A 1-Watt 38 GHz Power Amplifier Using 0.1-μm GaAs p-HEMT Technology
20. Design and analysis of a 55-71-GHz compact and broadband distributed active transformer power amplifier in 90-nm CMOS process
21. Design and analysis of a 0.8-77.5-GHz ultra-broadband distributed drain mixer using 0.13-[micro]m CMOS technology
22. 35-65-GHz CMOS broadband modulator and demodulator with sub-harmonic pumping for MMW wireless gigabit applications
23. Design and analysis of a 44-GHz MMIC low-loss built-in linearizer for high-linearity medium power amplifiers
24. A 27–42-GHz Low Phase Error 5-Bit Passive Phase Shifter in 65-nm CMOS Technology
25. A 28 GHz Linear and Efficient Power Amplifier Supporting Wideband OFDM for 5G in 28nm CMOS
26. A 20.8-41.6-GHz Transformer-Based Wideband Power Amplifier with 20.4-dB Peak Gain Using 0.9-V 28-nm CMOS Process
27. A 0.7-mW V-Band Transformer-Based Positive- Feedback Receiver Front-End in a 65-nm CMOS
28. A 67-86 GHz Spectrum-Efficient CMOS Transmitter Supporting 1024-QAM With a Process-Variation-Tolerant Design
29. Ka-Band Calibration-Free High Image-Rejection Up/Down Mixers With 117% Fractional IF Bandwidth for SATCOM Applications
30. A 22 — 40 GHz Wideband Image Rejection Mixer in $0.18-\mu \mathrm{m}$ CMOS Process
31. A K-band Dual-Polarized Phased-Array Front-End Receiver for SATCOM
32. Design of a 5.2-GHz CMOS Power Amplifier Using TF-Based 2-Stage Dual-Radial Power Splitting/Combining Architecture
33. A 5.2 GHz Haft-Watt Fully-Integrated CMOS Power Amplifier
34. A 39 GHz 5-Bit Switch Type Phase Shifter using 65 nm CMOS Technology
35. A X-Band Fully-Integrated CMOS Power Amplifier using Current Combining Technique
36. A 37 to 40 GHz Transceiver for Fifth Generation Communication Systems
37. An $X$ -Band 29.6-dBm CMOS Power Amplifier Using Folded Radial Splitter and Binary Combiner Network
38. Design of a 5.3-GHz 31.3-dBm Fully Integrated CMOS Power Amplifier Using Folded Splitting and Combining Architecture
39. A 38-GHz-Band Power Amplifier with Analog Pre-distortion for 1600-MHz Transmission Bandwidth 64-QAM OFDM Modulated Signal
40. A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm2 Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS
41. Smart RF Integrated Circuits: A Millimeter-Wave Gigabit Transceiver with Digitally-Enabled Built-In Self-Healing and Auto-Switching Functions
42. A High Spectral Efficiency Receiver at 57-66 GHz Using 65-nm CMOS in LTCC Package With Polarization MIMO
43. A 3.5 GHz low insertion loss variation CMOS phase shifter
44. A Ka-Band Sub-Harmonically Pumped Mixer Using Diode-Connected MOSFET for 5G MM-Wave Transceivers
45. A 29.6 dBm 29-GHz Power Amplifier for Satellite and 5G Communications Using 0.15-μm GaAs p-HEMT Technology
46. An E-Band Transformer-Based 90-nm CMOS LNA
47. A Ka-band High Linearity Up-Conversion Mixer with LO Boosting Linearization Technique
48. Reviews of High Image Rejection Up and Down Converters for Next-Generation Satellite Applications
49. A dual‐band class‐E power amplifier with concurrent matching network in 0.18‐μm CMOS
50. Design of multiway power dividers including all connecting lines
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.