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Your search keyword '"Tsai, Ming-Wei"' showing total 39 results
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39 results on '"Tsai, Ming-Wei"'

9. A thermal emitter with selective wavelength: Based on the coupling between photonic crystals and surface plasmon polaritons.

Author

Fu, Han-Kuei, Jiang, Yu-Wei, Tsai, Ming-Wei, Lee, Si-Chen, and Chen, Yang-Fang

Subjects
PHOTONICS, CRYSTALS, PLASMONS (Physics), POLARITONS, INFRARED radiation, GOLD films
Abstract

A thermal emitter with selective wavelength has been demonstrated in which the dielectric layers formed one-dimensional photonic crystals are sandwiched between two Ag films. The top Ag film is perforated periodically with hexagonal hole array. The selected thermal radiation of the photonic crystals resonates between two metal films and surface plasmon polaritons are generated on the top Ag and converted to light radiation. It is found that when leakage modes adjacent to the optic band gap of photonic crystals meet the resonant modes of surface plasmom polaritons, an enhanced thermal emission with maximum intensity can be obtained. The hybrid photonic and plasmonic thermal emitters are selective, which should be very useful for the creation of high power infrared light sources. [ABSTRACT FROM AUTHOR]

Published
2009
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10. Dispersion relation of Al/Si surface plasmon in hexagonally ordered aluminum hole arrays.

Author

Chang, Yi-Tsung, Chuang, Tzu-Hung, Tsai, Ming-Wei, Chen, Lung-Chien, and Lee, Si-Chen

Subjects
ALUMINUM alloying, SILICON, SPECTRUM analysis, LATTICE dynamics, FIELD theory (Physics), OPTICS
Abstract

This investigation examines the extraordinary light transmission through periodic hexagonally ordered aluminum hole arrays on silicon substrates. The holes are circular and the arrays with various hole diameters were fabricated. The transmission spectra through the hole arrays were measured as a function of the incident angle of the light beam. It is observed that the transmission peak splits into two when the diameter of the hole is close to half of the lattice constant. At larger incident angles, the six degenerate (1,0) Al/Si surface plasmon modes split into four or three modes depending on the symmetry axis, and even higher order modes can be identified for small hole diameters. [ABSTRACT FROM AUTHOR]

Published
2007
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36. Delafossite-CuAlO2 films prepared by annealing of amorphous Cu–Al–O films at high temperature under controlled atmosphere

Author

Chen, Hong-Ying and Tsai, Ming-Wei

Subjects
*COPPER compounds, *THIN films, *ANNEALING of metals, *HIGH temperatures, *THERMODYNAMICS, *OXYGEN, *X-ray diffraction
Abstract

Abstract: In this study, amorphous Cu–Al–O films were deposited onto a (100) p-type silicon substrate by a magnetron sputtering system. The films were then annealed at 700°C and 800°C for 2h in N2, air and O2. X-ray diffraction patterns showed that the as-deposited films were amorphous. When the films were annealed at 700°C, the monoclinic-CuO and spinel-CuAl2O4 phases were detected in all atmospheres. As the annealing temperature increased to 800°C, delafossite-CuAlO2 (Rm and P63/mmc phases) appeared in N2 whereas monoclinic-CuO and spinel-CuAl2O4 phases were detected in air and O2. Thermodynamic calculations can explain the formation of delafossite-CuAlO2 films. The optical bandgap and conductivity of delafossite-CuAlO2 films were 3.30eV and 6.8×10−3 S/cm, respectively, which are compatible with other data in the literature. The p-type characteristic in delafossite-CuAlO2 films was verified by a hot-probe method. [Copyright &y& Elsevier]

Published
2011
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37. Delafossite-CuAlO2 Thin Films Prepared by Thermal Annealing

Author

Chen, Hong Ying and Tsai, Ming Wei

Abstract

Transparent conducting oxides (TCOs) are well known and have been widely used for a long time in optoelectronics industries. The most popular TCOs have n-type characteristics. However p-type material is not well established and examined. The delafossite-CuAlO2 is one of the p-type TCOs. In this paper, amorphous Cu-Al-O films were deposited onto (100) p-type silicon substrate by magnetron sputtering. After that, the films were annealed at 800°C for 2 h in different partial oxygen levels ranging from 5*10-5 to 1 atm with N2, air, and O2. X-ray diffraction patterns showed that as-deposited films were amorphous. In addition, delafossite-CuAlO2 (R m and P63/mmc phase) appeared at 800°C in N2, but monoclinic-CuO and spinel-CuAl2O4 phases existed in air and O2. The formation of delafossite-CuAlO2 phase can be explained with thermodynamics. The optoelectronic properties of delafossite-CuAlO2 films were also measured. The direct optical bandgap was around at 3.3 eV, which is comparable with literature data. The electrical conductivity was obtained to be 6.8*10-3 S/cm. The hot-probe method employed to measure the electrical property of the films, which indicates that delafossite-CuAlO2 films have p-type characteristics.

Published
2008
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38. Coupling of surface plasmons between two silver films in a Ag/SiO2/Ag plasmonic thermal emitter with grating structure.

Author

Ye, Yi-Han, Jiang, Yu-Wei, Tsai, Ming-Wei, Chang, Yi-Tsung, Chen, Chia-Yi, Tzuang, Dah-Ching, Wu, Yi-Ting, and Lee, Si-Chen

Subjects
PLASMONS (Physics), EXCITON theory, PLASMA waves, ELECTROMAGNETIC fields, ELECTROMAGNETISM
Abstract

The reflection and emission spectra of Ag/SiO2/Ag trilayer plasmonic thermal emitters with different SiO2 thicknesses are investigated. The top Ag film is perforated with periodic slits. It is found that the coupling of surface plasmons at the top and bottom Ag/SiO2 interface results in the redshift in thermal emission peaks. In this Ag/SiO2/Ag plasmonic thermal emitter, the electromagnetic field exhibits either Fabry–Pérot resonance or propagating surface plasmons depending on the thickness of SiO2 layer. By varying the thickness of SiO2 layer, transition from localized to grating-coupled propagating surface plasmon modes is observed. [ABSTRACT FROM AUTHOR]

Published
2008
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39. Poly-Si Thin Fim Transistor with Multiple Nanowire Channels Prepared by Excimer Laser Annealing

Author

Lee, Si-Chen, Meng, Chao-Yu, Tsai, Ming-Wei, and Yang, Po-Chuan

Abstract

Low temperature (<500oC) polysilicon thin-film transistors (LTPS TFTs) prepared by KrF excimer laser annealing with multiple nanowire channels have been fabricated successfully. Grain boundary defects of poly-Si can be reduced effectively by multichannel structure. The ten 40 nm split channels TFT passivated by oxygen and NH3 plasma exhibits good electrical performance, i.e., high ON/OFF current ratio (>106), better subthreshold swing and suppressed kink effect.

Published
2006
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