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2. Ziegler–Natta Catalysis

Author

Dai, Qizhou, primary, Gilbert, Richard, additional, Kadla, John, additional, Bellehumeur, Céline, additional, Benko, David, additional, Beers, Roger, additional, Komar Kawatra, S, additional, Curran, Sean, additional, Lem, Kwok-Wai, additional, Sund, Steve, additional, Gabriel, Mina, additional, Kesavan, Sunil, additional, Richard Elliott Jr, J, additional, Tanguy, Philippe, additional, Thibault, Francis, additional, Ascanio, Gabriel, additional, Brito-De La Fuente, Edmundo, additional, Tiller, Frank, additional, Li, Wenping, additional, Heck, Roland, additional, Mohapatra, Satish, additional, Bruce, David, additional, Nareddy, Amarnath, additional, Deng, Shuguang, additional, Jachuck, R, additional, Burns, J, additional, Woodle, Guy, additional, Peng, Jing, additional, Nonaka, Takamasa, additional, Ohshima, Masahiro, additional, Gupta, Ram, additional, Sunol, Aydin, additional, Sunol, Sermin, additional, Aslam, Naveed, additional, Aasberg-Petersen, Kim, additional, Speight, James, additional, Feng, James, additional, Hill, John, additional, Chunghu Tsai, Tom, additional, Albright, Lyle, additional, Sullivan, Timothy, additional, Zheng, Haishan, additional, Keith, Jason, additional, Menard, Kevin, additional, Ashurst, W, additional, Carraro, C, additional, Maboudian, R, additional, Alford, T, additional, Kouvetakis, J, additional, Mayer, J, additional, Jhon, Myung, additional, Karis, Thomas, additional, Yen, Jeffrey, additional, Srinivas, Vijay, additional, Smith, Gary, additional, Yang, Shang-Tian, additional, Robinson, Clayt, additional, D, Ian, additional, Erni, Rolf, additional, Browning, Nigel, additional, Mills, Patrick, additional, Lambert Jr, Joseph, additional, Andersen, Paul, additional, Hayes, Douglas, additional, Korgel, Brian, additional, Hanrath, Tobias, additional, Davidson, Forrest, additional, Ruettinger, Wolfgang, additional, Ilinich, Oleg, additional, Kuehne, Mark, additional, Li, Norman, additional, Song, Richard, additional, Tsai, Maxwell, additional, Li, Jane, additional, Prelas, Mark, additional, Saha, Krishnendu, additional, Yan, Yushan, additional, Li, Zijian, additional, Li, Shuang, additional, Lew, Christopher, additional, and Chadwick, John, additional

Published
2005
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4. High-speed, high-reliability GaN power device with integrated gate driver

Author

Tang, Gaofei, primary, Kwan, M.-H., additional, Zhang, Zhaofu, additional, He, Jiabei, additional, Lei, Jiacheng, additional, Su, R.-Y., additional, Yao, F.-W., additional, Lin, Y.-M., additional, Yu, J.-L., additional, Yang, Thomas, additional, Chern, Chan-Hong, additional, Tsai, Tom, additional, Tuan, H. C., additional, Kalnitsky, Alexander, additional, and Chen, Kevin J., additional

Published
2018
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5. High-speed, high-reliability GaN power device with integrated gate driver

Author

Tang, Gaofei, Kwan, M.-H., Zhang, Zhaofu, He, Jiabei, Lei, Jiacheng, Su, R.-Y., Yao, F.-W., Lin, Y.-M., Yu, J.-L., Yang, Thomas, Chern, Chan-Hong, Tsai, Tom, Tuan, H. C., Kalnitsky, Alexander, Chen, Jing, Tang, Gaofei, Kwan, M.-H., Zhang, Zhaofu, He, Jiabei, Lei, Jiacheng, Su, R.-Y., Yao, F.-W., Lin, Y.-M., Yu, J.-L., Yang, Thomas, Chern, Chan-Hong, Tsai, Tom, Tuan, H. C., Kalnitsky, Alexander, and Chen, Jing

Abstract

An enhancement-mode GaN power switch with monolithically integrated gate driver is demonstrated on a 650-V GaN-on-Si power device platform. The integrated GaN-based gate driver features advanced designs such as bootstrapped gate-charging current source that enables high current driving capability during the entire turn-on process and rail-to-rail output. The GaN power transistor with integrated gate driver was characterized up to 300 V/15 A switching operations using a double pulse tester, and exhibits suppressed gate ringing and fast switching speed. The peak drain voltage slew rate d V/dt is above 125 V/ns during turn-on, and 336 V/ns during turn-off.

Published
2018

6. Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform

Author

Tang, Gaofei, primary, Kwan, Alex M. H., additional, Wong, Roy K. Y., additional, Lei, Jiacheng, additional, Su, R. Y., additional, Yao, F. W., additional, Lin, Y. M., additional, Yu, J. L., additional, Tsai, Tom, additional, Tuan, H. C., additional, Kalnitsky, Alexander, additional, and Chen, Kevin J., additional

Published
2017
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7. Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform

Author

Tang, Gaofei, Kwan, Alex M. H., Wong, Roy K. Y., Lei, Jiacheng, Su, R. Y., Yao, F. W., Lin, Y. M., Yu, J. L., Tsai, Tom, Tuan, H. C., Kalnitsky, Alexander, Chen, Kevin J., Tang, Gaofei, Kwan, Alex M. H., Wong, Roy K. Y., Lei, Jiacheng, Su, R. Y., Yao, F. W., Lin, Y. M., Yu, J. L., Tsai, Tom, Tuan, H. C., Kalnitsky, Alexander, and Chen, Kevin J.

Abstract

GaN-based digital integrated circuits (ICs) are realized on a 6-inch GaN-on-Si power high-electron-mobility transistor (HEMT) platform by monolithic integration of enhancement/depletion-mode HEMTs using a 0.5-mu m gate technology. A direct-coupled FET logic inverter and a 101-stage ring oscillator are fabricated and characterized. The inverter exhibits a large input voltage swing, wide noise margin, and high temperature stability, while the ring oscillator features a small propagation delay of 0.1 ns/stage under a supply voltage of 4 V. These digital ICs can operate properly up to at least 200 degrees C and show great potential for GaN smart power IC applications.

Published
2017

8. A next generation CMOS-compatible GaN-on-Si transistors for high efficiency energy systems

Author

Wong, K.-Y. Roy, primary, Kwan, M.-H., additional, Yao, F.-W., additional, Tsai, M.-W., additional, Lin, Y.-S., additional, Chang, Y.-C., additional, Chen, P.-C., additional, Su, R.-Y., additional, Yu, J.-L., additional, Yang, F.-J., additional, Lansbergen, G. P., additional, Hsiung, C.-W., additional, Lai, Y.-A., additional, Chiu, K.-L., additional, Chen, C.F., additional, Lin, M.-C., additional, Wu, H.-Y., additional, Chiang, C.-H., additional, Liu, S.-D., additional, Chiu, H.-C., additional, Liu, P.-C., additional, Chen, C.-M., additional, Yu, C.-Y., additional, Tsai, C.-S., additional, Wu, C.-B., additional, Lin, B., additional, Chang, M.-H., additional, You, J.-S., additional, Wang, S.-P., additional, Chen, L.-C., additional, Liao, Y.-Y., additional, Tsai, L.Y., additional, Tsai, Tom, additional, Tuan, H.C., additional, and Kalnitsky, Alex, additional

Published
2015
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9. Model predicts yields from ethane-propane cracking

Author

Tsai, Tom C., Zou Renjun, and Zou Jin

Subjects
Petroleum chemicals industry -- Production management, Cracking process -- Research, Business, Petroleum, energy and mining industries
Published
1987

12. Packed-tower program has special features

Author

Tsai, Tom C.

Subjects
Packed towers -- Design and construction, Gas industry -- Innovations, Business, Petroleum, energy and mining industries
Published
1985

13. Yield correlations for AGO cracking are reliable

Author

Tsai, Tom C.

Subjects
Catalytic cracking -- Innovations, Petroleum chemicals industry -- Innovations, Pyrolysis -- Models, Business, Petroleum, energy and mining industries
Published
1985

14. Microcomputer program optimizes steam systems

Author

Tsai, Tom C.

Subjects
Petroleum refineries -- Technology application, Petroleum chemicals industry -- Technology application, Steam engineering, Business, Petroleum, energy and mining industries
Published
1986

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