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30 results on '"Tsukiji, Naoki"'

1. High power blue laser and copper welding with near-infrared fiber laser

Author

Atsumi, Taisuke, primary, Kawasaki, Kohei, additional, Sano, Sumika, additional, Aoki, Hiroatsu, additional, Mori, Hajime, additional, Matsumoto, Nobuyasu, additional, Kageyama, Hiroto, additional, Matsumoto, Ryoya, additional, Sakai, Toshiaki, additional, Kawakita, Yasumasa, additional, and Tsukiji, Naoki, additional

Published
2024
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3. Pump Laser Diodes and WDM Pumping

Author

Namiki, Shu, Tsukiji, Naoki, Emori, Yoshihiro, Rhodes, W. T., editor, Asakura, T., editor, Brenner, K. -H., editor, Hänsch, T. W., editor, Kamiya, T., editor, Krausz, F., editor, Monemar, B., editor, Venghaus, H., editor, Weber, H., editor, Weinfurter, H., editor, and Islam, Mohammed N., editor

Published
2004
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7. 1060nm VCSEL development at Furukawa for parallel optical interconnect

Author

Funabashi, Masaki, primary, Imai, Suguru, additional, Takaki, Keishi, additional, Kamiya, Shinichi, additional, Shimizu, Hitoshi, additional, Kawakita, Yasumasa, additional, Hiraiwa, Koji, additional, Yoshida, Junji, additional, Suzuki, Toshihito, additional, Ishikawa, Takuya, additional, Tsukiji, Naoki, additional, and Kasukawa, Akihiko, additional

Published
2012
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8. 1060nm VCSEL for inter-chip optical interconnection

Author

Takaki, Keishi, primary, Imai, Suguru, additional, Kamiya, Shinichi, additional, Shimizu, Hitoshi, additional, Kawakita, Yasumasa, additional, Hiraiwa, Koji, additional, Takagi, Tomohiro, additional, Shimizu, Hiroshi, additional, Yoshida, Junji, additional, Ishikawa, Takuya, additional, Tsukiji, Naoki, additional, and Kasukawa, Akihiko, additional

Published
2011
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11. Experimental demonstration of low jitter performance and high reliable 1060nm VCSEL arrays for 10Gbpsx12ch optical interconnection

Author

Takaki, Keishi, primary, Iwai, Norihiro, additional, Kamiya, Shinichi, additional, Shimizu, Hitoshi, additional, Hiraiwa, Koji, additional, Imai, Suguru, additional, Kawakita, Yasumasa, additional, Takagi, Tomohiro, additional, Ishikawa, Takuya, additional, Tsukiji, Naoki, additional, and Kasukawa, Akihiko, additional

Published
2010
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12. High efficiency 1060nm VCSELS for low power consumption

Author

Kageyama, Takeo., primary, Takaki, Keishi, additional, Imai, Suguru, additional, Kawakita, Yasumasa, additional, Hiraiwa, Koji, additional, Iwai, Norihiro, additional, Shimizu, Hitoshi, additional, Tsukiji, Naoki, additional, and Kasukawa, Akihiko, additional

Published
2009
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13. Development of Long Wavelength VCSELs

Author

IWAI, Norihiro, primary, SHIMIZU, Hitoshi, additional, KAGEYAMA, Takeo, additional, TAKAKI, Keishi, additional, IMAI, Suguru, additional, KAWAKITA, Yasumasa, additional, TSUKIJI, Naoki, additional, and KASUKAWA, Akihiko, additional

Published
2009
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19. Pump Laser Diodes and WDM Pumping.

Author

Rhodes, W. T., Asakura, T., Brenner, K. -H., Hänsch, T. W., Kamiya, T., Krausz, F., Monemar, B., Venghaus, H., Weber, H., Weinfurter, H., Islam, Mohammed N., Namiki, Shu, Tsukiji, Naoki, and Emori, Yoshihiro

Abstract

This chapter discusses issues surrounding the pump laser diodes for broadband Raman amplifiers, which range from fundamentals to industry practices of Raman pump sources based on the so-called 14XX nm pump laser diodes. It also refers to design issues of wavelength-division-multiplexed (WDM) pumping for realizing a broad and flat Raman gain spectrum over the signal band. Section 5.1 introduces fundamentals of pump laser diodes. Section 5.2 refers to the principle and design issues of WDM pumping technique. Section 5.3 discusses details of pump laser diodes and their efficiently combining and depolarizing technologies. Section 5.4 describes practical Raman pump units. And Section 5.5 briefly touches upon ongoing issues on copumped Raman amplifiers and their pumping sources. [ABSTRACT FROM AUTHOR]

Published
2004
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26. Recorded Low Power Dissipation in Highly Reliable 1060-nm VCSELs for “Green” Optical Interconnection.

Author

Imai, Suguru, Takaki, Keishi, Kamiya, Shinichi, Shimizu, Hitoshi, Yoshida, Junji, Kawakita, Yasumasa, Takagi, Tomohiro, Hiraiwa, Koji, Shimizu, Hiroshi, Suzuki, Toshihito, Iwai, Norihiro, Ishikawa, Takuya, Tsukiji, Naoki, and Kasukawa, Akihiko

Abstract

1060-nm VCSELs with low power dissipation and high reliability are demonstrated. We designed 1060-nm VCSELs with double intracavity structure to achieve high reliability and low power dissipation for the optical interconnection. We performed evaluations of an error-free 10-Gbps operation at low bias current, and the recorded low power dissipation per data rate of 0.14 mW/Gbps was achieved. Even though the modulation amplitude of the input signal was as small as 75 mV\{{p-{p}}}, the extinction ratio of 6.5 dB was observed. From accelerating aging tests with 4898 devices, no random failure was observed, and high reliability of 30 failures in term (FITs)/channel with a confidence level of 90% was achieved. [ABSTRACT FROM PUBLISHER]

Published
2011
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27. Challenges of Raman Amplification.

Author

Namiki, Shu, Seo, Koji, Tsukiji, Naoki, and Shikii, Shigeru

Subjects
ELECTRONIC amplifiers, ELECTRONICS, TECHNOLOGY, WAVELENGTH division multiplexing, MULTIPLEXING, OPTICAL communications, LASERS
Abstract

Raman amplifiers are often regarded as a typical example of technologies rapidly developed in the midst of turmoil created by the so-called wavelength division multiplexing (WDM) bubble. Indeed, Raman amplifiers turned out to be technically very attractive in all the aspects of capacity, reach, and bit rate. Even though Raman amplifiers are actually being deployed into systems in commercial service, the practical issues, such as cost, reliability and safety, are yet to be further discussed, particularly for the configuration of distributed amplification. After summarizing the advantages of Raman amplification and reviewing pump laser technologies. this paper will highlight ongoing efforts on practical issues, which include reliability and safety issues of fiber under high-power operations. Finally, it is concluded that by overcoming the above-mentioned practical issues, Raman amplification will stay as a key technology for future optical communications because of its compelling unique advantages. [ABSTRACT FROM AUTHOR]

Published
2006
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28. 1060nm VCSEL development at Furukawa for parallel optical interconnect

Author

Funabashi, Masaki, Imai, Suguru, Takaki, Keishi, Kamiya, Shinichi, Shimizu, Hitoshi, Kawakita, Yasumasa, Hiraiwa, Koji, Yoshida, Junji, Suzuki, Toshihito, Ishikawa, Takuya, Tsukiji, Naoki, and Kasukawa, Akihiko

Abstract

This paper reviews research and development of 1060nm VCSELs at Furukawa Electric. We pursue the simultaneous realization of three strong demands for low power consumption, high reliability, and high speed. For this purpose, we have chosen compressively strained InGaAs/GaAs active layers emitting in a 1060 nm wavelength range because of their advantages of lower threshold voltage, smaller defect propagation velocity, and larger material differential gain, compared to those of GaAs/AlGaAs active layers widely used in 850 nm VCSELs. Oxide-confined and double intracavity structures provide low and stable electrical resistance as well as low optical loss. The developed VCSELs exhibited low threshold currents of 0.31 mA at 25 °C and 0.56 mA at 90 °C, together with highly uniform slope efficiency distributions throughout a wafer. We also demonstrated 10 Gbps error free transmission at a very low bias current of 1.4 mA, yielding low power dissipation operation of 0.14 mW/Gbps. Clear eye openings up to 20 Gbps were confirmed at a low bias current of 3mA. A series of endurance tests and accelerated aging tests on nearly 5000 VCSELs have proved Telcordia qualified high reliability and a very low failure rate of 30 FIT/channel at an operating temperature of 40 °C and a bias current of 6mA, with a 90% confidential level.

Published
2012
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