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Lead halide perovskites were known to be a prospective family of materials for terahertz (THz) generation. On the other hand, perovskite nanostructures, nanoantennas, and metasurfaces allow tailoring perovskites optical characteristics, resulting in more efficient interaction with incident or emitted light. Moreover, the perovskites are robust materials against formation of defects caused by mechanical deformations and can be efficiently nanostructured by various high throughput methods. In this work, we have enhanced THz emission from MAPbI3 perovskite upon femtosecond laser irradiation using nanoimprint lithography. The formed nanostructures not only improve absorption of the incident laser pulses, but also lead to a non-symmetric near-field distribution. As a result, we have enhanced the efficiency of THz emission from the nanostructured perovskite by 3.5 times as compared with a smooth perovskite film. Our results paved the way for a new application of large-scale perovskite nanostructuring, making halide perovskites competitive with more expensive conventional semiconductors for THz generation.

Resonant semiconductor nanoparticles (NPs) that improve both light trapping and scattering have recently emerged as an additional tool for enhancing the efficiency of perovskite solar cells. Among the various types of nanostructures, silicon NPs, which support Mie modes and have lower losses compared with metallic particles with plasmon resonances, exhibit the best improvement for standard methylammonium lead iodide (MAPbI3)‐based solar cells. Herein, not only the optical problem of solar cell optimization with silicon nanoantennas is studied, but also the effects related to charge carrier transport in the presence of NPs are considered. In particular, it is theoretically shown that the silicon nanoantennas can be further optimized by p‐doping. The experimental verification is conducted for MAPbI3‐based solar cells by p‐doped silicon NPs in a hole transport layer (Spiro‐OMeTAD). The improved generation rate of charge carriers and hole transport through the doped silicon NPs leads to improved efficiency of the device. [ABSTRACT FROM AUTHOR]

Lead halide perovskites were known to be a prospective family of materials for terahertz (THz) generation. On the other hand, perovskite nanostructures, nanoantennas, and metasurfaces allow tailoring perovskites optical characteristics, resulting in more efficient interaction with incident or emitted light. Moreover, the perovskites are robust materials against formation of defects caused by mechanical deformations and can be efficiently nanostructured by various high throughput methods. In this work, we have enhanced THz emission from MAPbI3 perovskite upon femtosecond laser irradiation using nanoimprint lithography. The formed nanostructures not only improve absorption of the incident laser pulses, but also lead to a non-symmetric near-field distribution. As a result, we have enhanced the efficiency of THz emission from the nanostructured perovskite by 3.5 times as compared with a smooth perovskite film. Our results paved the way for a new application of large-scale perovskite nanostructuring, making halide perovskites competitive with more expensive conventional semiconductors for THz generation. [ABSTRACT FROM AUTHOR]