124 results on '"Tu, Chun-Hao"'
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2. Improvements in the reliability of a-InGaZnO thin-film transistors with triple stacked gate insulator in flexible electronics applications
3. Highly Compatible Low Temperature Polycrystalline Silicon Oxide Technology for High-Resolution Display Backplane Applications
4. Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors
5. Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory
6. Formation and composition of titanium oxinitride nanocrystals synthesized via nitridizing titanium oxide for nonvolatile memory applications
7. Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N 2 and O 2 ambient
8. Application of fluorine doped oxide (SiOF) spacers for improving reliability in low temperature polycrystalline thin film transistors
9. Performance enhancement of excimer laser crystallized poly-Si thin film transistors with fluorine implantation technology
10. Formation of stacked nickel-silicide nanocrystals by using a co-mixed target for nonvolatile memory application
11. Formation of germanium nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application
12. A novel method for growing polycrystalline Ge layer by using UHVCVD
13. 50-4: Novel Large-size Process for Organic Thin-Film Transistor Fabrication
14. P-129: Planarization Effect on Electrical Performances of Organic Thin Film Transistors
15. Characteristics and stress-induced degradation of laser-activated low temperature polycrystalline silicon thin-film transistors.
16. P-123: Carrier Transport Mechanism and Device Application of Polymer-Type Organic Thin-Film Transistors
17. 14-2: Towards Commercial Organic Electronics and Comprehensive Comparison of Device Performance and Reliability of Organic and a-Si:H Thin-Film Transistor Technologies
18. Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory
19. P-203L:Late-News Poster: 6-inch AMOLEDs Driven by High Stability Organic Thin-Film Transistor Backplanes
20. P-29: A Polymer/Fullerene-based Material in Near-Infrared Photodetector Application
21. P-147: Organic Thin Film Transistors using Solution and Photolithography Process
22. 6.1:Invited Paper: Handling Technology of Plastic Substrates in Flexible Display Manufacturing
23. WITHDRAWN: Application of fluorine doped oxide (SiOF) spacers for improving reliability in low temperature polycrystalline thin film transistors
24. P‐27: An Unplugged Electronic Display
25. Nitric Acid Oxidized ZrO$_2$ as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory Devices
26. P‐15: Bias Stress Reliability for w/ and w/o Oxide‐passivated IGZO TFTs
27. Employ Present Five Masks Amorphous Silicon Thin-Film Transistor Design and Process Flow to Realize 5-in. InGaZnO Active-Matrix Liquid Crystal Display with Improved Stress Stability
28. Effects of Ambient Atmosphere on Electrical Characteristics of Al2O3 Passivated InGaZnO Thin Film Transistors during Positive-Bias-Temperature-Stress Operation
29. Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition
30. Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N2 and O2 ambient
31. Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress
32. Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitride
33. Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi[sub 2] Nanocrystals Nonvolatile Memory
34. High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO[sub 2] Pellets for the Nonvolatile Memory Device Application
35. Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications
36. Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memory
37. NiSiGe nanocrystals for nonvolatile memory devices
38. Improved reliability of Mo nanocrystal memory with ammonia plasma treatment
39. Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure
40. Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices
41. Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment
42. Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction
43. Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory
44. Formation of Mo Silicide Nanodot Memory by Rapid Thermal Annealing Dual Electron-Gun Evaporated Mo–Si Layer
45. Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal
46. Formation of stacked Ni silicide nanocrystals for nonvolatile memory application
47. Improved Performance of F-Ions-Implanted Poly-Si Thin-Film Transistors Using Solid Phase Crystallization and Excimer Laser Crystallization
48. Formation of Germanium Nanocrystals Embedded in a Silicon-Oxygen-Nitride Layer
49. Improved memory window for Ge nanocrystals embedded in SiON layer
50. Electrical Enhancement of Solid Phase Crystallized Poly-Si Thin-Film Transistors with Fluorine Ion Implantation
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