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In this work, a wireless sensor was developed using the screen out method. The study distinguishes itself from previous studies in terms of the research methodology; specifically, this study uses a R-wave amplitude (RWA) as the primary data source. The findings indicate that RWA demonstrated distinctive changes while research subjects were awake or sleep; RRI also changes during the transitional period between the two psychological conditions. Based on this unique quality, the study determined whether a research subject has entered the first dozing stage, while allowing the determining program to respond distinctively and promptly. Experimental results indicate that the analysis result of frequency domain of RII represent the activity state of autonomic nervous system (ANS). When the LF and HF ratio are smaller than 1(LF/HF < 1), this shows that HR has been equally diminished, designating the beginning of a dozing state. Using the same RWA data for detrended fluctuation analysis (DFA). [ABSTRACT FROM PUBLISHER]

In this work, a skin surface information detector was developed using a capacitance measurement in the future platform for the development of intelligent life would be a major issue. We focus on the type of EDA measurement and indicator most commonly used in research — the skin conductance response (SCR). Concentrating primarily on tangible advice regarding the practical steps involved in using skin conductance, we give only a brief overview of the physiological background of EDA and then delve into more concrete issues. Our discussion of practical concerns starts with a description of the needed equipment, the setup of the skin conductance acquisition. [ABSTRACT FROM PUBLISHER]

This investigation considers in detail a defect called “silicon substrate damaged defects” and also introduces these defects' forming mechanisms and their root causes. These defects are likely to become increasing important in the future of deep-sub micrometer ULSI's situation. Two conditions typically result in silicon damaged defects during manufacturing processes namely: (1) watermark with carbon content and (2) the electrical charges accumulated on the silicon wafer surface. [ABSTRACT FROM PUBLISHER]