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Superconducting digital circuits are promising technologies that can overcome bottlenecks in both classical and quantum computation due to their ultra-high operation speed and extremely low power dissipation. Superconducting nanowire cryotrons (nTrons) are emerging as one type of superconductor switching devices, offering advantages complementary to conventional Josephson junctions. Achieving monolithic integration of a reasonable number of nTrons into a functional digital circuit is a crucial step to extend its application. In this study, we constructed a monolithic integrated nTron-based binary encoder, which includes input fanout circuits, on-chip biasing, combinational logic routing and multi-gate nTrons. This represents a monolithic nTron digital circuit comprising 137 nTron gates, 424 resistors, 274 inductors, and 164 vias developed using a two-superconducting-layer fabrication process. The performance of this monolithic nTron encoder surpasses that of our previously demonstrated circuit with discrete nTron components. The maximum bias margin is 28% for the fanout circuit and 60% for the multi-gate nTron when using a signal generator, while the minimum timing jitter is 40 ps. The total power dissipation mainly from biasing resistors is 19.6 μW, making it more power efficient than RSFQ encoders. The encoder is then packaged and connected with a superconducting nanowire single-photon detector array for demonstrating its function of addressing pixel locations. Compared to the conventional readout, the nTron encoder shows a minimum readout error rate lower than 10−4 and reduces the readout RF lines from 15 to 4. The design and fabrication technologies could enrich integrated nTron digital circuits beyond current limits and promote their applications in classical and quantum systems. [ABSTRACT FROM AUTHOR]

A novel room-temperature microbolometer array chip consisting of an Nb5N6 thin film microbridge and a dipole planar antenna, which is used as a terahertz (THz) detector, is described in this paper. Due to the high-temperature coefficient of the resistance of the Nb5N6 thin film, which is as high as -0.7% K-1, such an antenna-coupled microbolometer is ideal for detecting signals in a frequency range from 0.22 THz to 0.33 THz. The dc responsivity, calculated from the measured I-V curve of the Nb5N6 microbolometer, is about -760 V/W at a bias current of 0.19 mA. A typical noise voltage as low as 10 nV/Hz1/2 yields a low noise equivalent power (NEP) of 1.3 x 10-11 W/Hz1/2 at a modulation frequency above 4 kHz, and the best RF responsivity, characterized using an infrared device measuring method, is about 580 V/W, with the corresponding NEP being 1.7 x 10-11 W/Hz1/2. In order to further test the performance of the Nb5N6 microbolometer, we construct a quasi-optical type receiver by attaching it to a hyperhemispherical silicon lens, and the result is that the best responsivity of the receiver is up to 320 V/W. This work could offer another way to develop a large scale focal-plane array in silicon using simple techniques and at low cost. [ABSTRACT FROM AUTHOR]

Despite their exceptional sensitivity, single photon detectors typically exhibit limited tolerance to strong light compared to conventional linear photodetectors. Consequently, a disparity arises between these two detector types, hindering the achievement of both high sensitivity and high dynamic range in sensing and imaging. To bridge this gap, a segmented architecture is implemented with a waveform‐variance readout scheme for extacting high‐flux photon informaiton.This approach gives an unprecedented ultra‐high dynamic range of 75 dB at a fixed bias current, where single photon counting mode and quasi‐linear photodetection mode coexist. High‐dynamic imaging, passive thermal imaging, and joint active and passive imaging are demonstrated, which validate the advantages of this dual‐mode detector. Such a versatile detector will offer enhanced flexibility, single‐photon sensitivity, as well as ultra‐wide dynamic range across various scientific and technical domains. [ABSTRACT FROM AUTHOR]

We propose a simulation method for a multireflector terahertz imaging system. The description and verification of the method are based on an existing active bifocal terahertz imaging system at 0.22 THz. Using the phase conversion factor and angular spectrum propagation, the computation of the incident and received fields requires only a simple matrix operation. The phase angle is used to calculate the ray tracking direction, and the total optical path is used to calculate the scattering field of defective foams. Compared with the measurements and simulations of aluminum disks and defective foams, the validity of the simulation method is confirmed in the field of view of 50 cm × 90 cm at 8 m. This work aims to develop better imaging systems by predicting their imaging behavior for different targets before manufacturing.

A superconducting nanowire single-photon imager (SNSPI) uses a time-multiplexing method to reduce the readout complexity. However, due to the serial connection, the nanowire should be uniform so that a common bias can set all segments of the nanowire to their maximum detection efficiency, which becomes more challenging as the scalability (i.e., the length of the nanowire) increases. Here, we have developed a 64-pixel SNSPI based on amorphous Mo 80 Si 20 film, which yielded a uniform nanowire and slow transmission line. Adjacent detectors were separated by delay lines, giving an imaging field of 270 µm × 240 µm. Benefiting from the high kinetic inductance of Mo 80 Si 20 films, the delay line gave a phase velocity as low as 4.6 µm/ps. The positions of all pixels can be read out with a negligible electrical cross talk of 0.02% by using cryogenic amplifiers. The timing jitter was 100.8 ps. Saturated internal quantum efficiency was observed at a wavelength of 1550 nm. These results demonstrate that amorphous film is a promising material for achieving SNSPIs with large scalability and high efficiency.