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Aim. Data collection and analysis of the composition and productivity of vegetation and assessment of carbon sequestration by vegetation and soil in meadow steppe at a fallow site in the Bashkir Cis‐Urals, Russia. Material and Methods. The work is based on a survey of vegetation and soils of meadow steppe located in fallow areas, where post‐agrogenic restoration succession has been going on for more than 20 years. Results. The plant cover of the area studied is close to natural rich‐forb meadow steppes but differs in lower indicators of species richness and saturation, as well as the presence of weedy segetal species. The total plant biomass on the plot studied was estimated at 11.35 t/ha (including live aboveground biomass 2.98 t/ha, mortmass 3.11 t/ha, root weight 5.25 t/ha). The average stock of carbon in the plant biomass is 427.6 g/m2, and the total carbon stock in plant matter within the site is 36.88 tons. The soil cover of the area studied is Chernozem Calcic. The average levels of carbon stocks in short‐thickness soil at the 0–90 cm layer is 308 t/ha, while in medium‐thick soil it is 378 t/ha. Conclusions. A feature of the communities surveyed is a poor floristic composition, low productivity and low proportion of roots (47 % of the total plant biomass), which is caused by incomplete recovering of steppe vegetation and low thickness of the humus horizon. The soils of the site are close to virgin steppe lands in terms of carbon content and reserves.

Abstract The threshold voltage of a field-effect transistor (FET) determines its switching and limits the scaling of the supply voltage in the logic gates. Here we demonstrate a GaAs FET with a monolayer graphene gate in which the threshold voltage was externally controlled by an additional control gate. The graphene gate forms a Schottky junction with the transistor channel, modulating the channel conductivity. The control gate sets the work function of the graphene gate, controlling the Schottky barrier height and therefore the threshold voltage, and reduces the subthreshold swing down to ~60 mV dec−1. The change of the threshold voltage was large enough to turn the initially depletion mode FETs into the enhancement mode FETs. This allowed to realize logic gates with a positive switching threshold in which the threshold voltage of each transistor was independently set. The presented FETs can also be operated as dual-gate FETs, which was demonstrated by realizing frequency mixers.

Due to the global increase in CO2 in the atmosphere, studies focusing on the carbon balance in forest ecosystems are currently particularly relevant. Abandoned agricultural lands could provide an important contribution to carbon sequestration in many parts of the world. In the broad-leaved forest zone of the Cis-Ural (Southern Ural region, Russia), the carbon sequestration dynamics in the biomass of woody and herbaceous plants, as well as in the litter and soil on abandoned arable lands repopulated with silver birch (Betula pendula), was studied. The data were collected on 35 round (with diameter of 30 m) sample plots located within communities representing the different stages of reforestation with tree stands aged 3 to 30 years. It was found that the carbon content of the stem wood and herbaceous understory did not depend on the succession stages, which largely corresponds to the literature data. The carbon content in root biomass and soil organic matter increased along with the growth of tree stands. While the forest stand grew, the carbon content in the grey forest soil increased from 2.5 to 4.4%, and in the more fertile dark grey forest soil it changed only slightly. The carbon deposition by the forest stands on the sample plots located on the dark grey forest soils was higher than on grey forest soils. The average rate of carbon sequestration in the tree stand was 2.7 t/ha/year. Most mature, 25–30-years-old silver birch tree stands provided the highest average annual increase in tree biomass and the rate of carbon sequestration evaluated was 9 t/ha/year. Also, the carbon pool in the 30 cm soil layer was 2.7 times greater than in the tree stand. It was concluded that abandoned agricultural lands overgrowing by forest in the Cis-Ural are promising for carbon sequestration.

Abstract We investigated the nucleation of Ga droplets on singular GaAs(111)A substrates in the view of their use as the seeds for the self-assembled droplet epitaxial quantum dots. A small critical cluster size of 1–2 atoms characterizes the droplet nucleation. Low values of the Hopkins-Skellam index (as low as 0.35) demonstrate a high degree of a spatial order of the droplet ensemble. Around $$350\,^{\circ }\hbox {C}$$ 350 ∘ C the droplet size distribution becomes bimodal. We attribute this observation to the interplay between the local environment and the limitation to the adatom surface diffusion introduced by the Ehrlich–Schwöbel barrier at the terrace edges.

We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In0.6Al0.4As metamorphic buffer layer grown on a GaAs(111)A misoriented substrate. The comparison between the quantum electronic calculations of the optical transitions and the emission properties of the quantum dots highlights the presence of a strong quenching of the emission from larger quantum dots. Detailed analysis of the surface morphology during the capping procedure show the presence of a critical size over which the quantum dots are plastically relaxed.

Abstract The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the growth temperature of 150 °С have been obtained. The phase diagrams of the superstructure change during the epitaxial growth of Sn on Si and on Ge(100) have been built. Using the phase diagram data, it becomes possible to identify the Sn cover on the Si surface and to control the Sn segregation on the superstructure observed on the reflection high-energy electron diffraction (RHEED) pattern. The multilayer structures with the GeSiSn pseudomorphic layers and island array of a density up to 1.8 × 1012 cm−2 have been grown with the considering of the Sn segregation suppression by the decrease of GeSiSn and Si growth temperature. The double-domain (10 × 1) superstructure related to the presence of Sn on the surface was first observed in the multilayer periodic structures during Si growth on the GeSiSn layer. The periodical GeSiSn/Si structures demonstrated the photoluminescence in the range of 0.6–0.85 eV corresponding to the wavelength range of 1.45–2 μm. The calculation of the band diagram for the structure with the pseudomorphic Ge0.315Si0.65Sn0.035 layers allows assuming that photoluminescence peaks correspond to the interband transitions between the X valley in Si or the Δ4-valley in GeSiSn and the subband of heavy holes in the GeSiSn layer.

This work deals with elastically strained GeSiSn films and GeSiSn islands. The kinetic diagram of GeSiSn growth for different lattice mismatches between GeSiSn and Si has been drawn. The multilayered periodic structures with pseudomorphic GeSiSn layers and GeSiSn island arrays have been obtained. The density of the islands in the GeSiSn layer is 1.8 · 1012 cm-2 for an average island size of 4 nm. Analysis of the rocking curves has shown that the structures contain smooth heterointerfaces, and no abrupt changes of composition and thickness between periods have been found. Photoluminescence has been demonstrated and calculation of band diagram with the model-solid theory has been carried out. Luminescence presented for sample with pseudomorphic Ge0.315Si0.65Sn0.035 layers in the narrow range 0.71–0.82 eV is observed with the maximum intensity near 0.78 eV corresponding to 1.59 µm wavelength. Based on the band diagram calculation for Si/Ge0.315Si0.65Sn0.035/Si heterocomposition we have concluded that 0.78 eV photon energy luminescence corresponds to interband transitions between the X-valley in Si and the heavy hole subband in the Ge0.315Si0.65Sn0.035 layer.

Silver birch (Betula pendula Roth) is one of the fast-growing tree species that often colonize abandoned agricultural lands in Europe and the European part of Russia. The purpose of this article is to analyze the spatiotemporal dynamics of Betula pendula crown cover on abandoned arable lands in a zone of broad-leaved forests of the Bashkir Cis-Ural (Russia, Republic of Bashkortostan). The assessment of current and retrospective values of crown cover was carried out using a regression model of the dependence of crown cover on the values of red channel brightness in early-spring images from Landsat 5–8 and Sentinel-2 satellites from 2012–2022. To estimate the number and height of trees, a survey was carried out using a LiDAR camera mounted on a UAV. After calculating the crown cover in grid squares and their distance from the seed source in QGIS, variance analysis was carried out to assess the influence of the factor of distance from the seed source on the crown cover. The influence of the factor of distance from the seed source on the crown cover was higher at earlier stages of overgrowth of abandoned agricultural lands. An exception to this dependence was only one sample plot where the prevailing wind direction was opposite to the direction of seed dispersal. The leading factors affecting the distribution of birch on abandoned agricultural lands were wind direction, height of seed trees, and grazing. In the parts of the sample plots that were furthest away from seed sources, the trees were 1–3 years younger or the same age, and stand density was lower than in sites located closer to the seed trees. In general, the results of the present study indicate two opposite relationships between seedling survival and distance to seed trees: (1) seed fall and seedling density decrease with increasing distance from the seed tree, and (2) the probability of seed/seedling survival increases due to decreased competition. [ABSTRACT FROM AUTHOR]

We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increase in the density with decreasing temperature, indeed, is observed only down to 160 °C, where the indium islands undertake the expected liquid-to-solid phase transition. Further decreasing the temperature causes a sizable reduction of the island density. An additional reentrant increasing behavior is observed below 80 °C. We attribute the above complex behavior to the liquid–solid phase transition and to the complex island–island interaction which takes place between crystalline islands in the presence of strain. Indium solid islands grown at temperatures below 160 °C have a face-centered cubic crystal structure.