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When thin films are patterned to realize nanoscale device geometries, maintaining their structural integrity is key to the quality of their functional properties. The introduction of new surfaces and interfaces by lateral modifications may alter material properties as well as the expected device functionality. In this study, two different techniques for nanoscale patterning of epitaxial thin films of La0.7Sr0.3MnO3 are used to investigate the effects on their ferromagnetic properties and film crystalline structure. Nanomagnets are realized as free-standing structures and embedded ferromagnets in a paramagnetic matrix, respectively. We find that the magnetic dichroism signal in x-ray spectomicroscopy is stronger along the edges of the embedded magnets close to TC. X-ray-diffraction measurements reveal a reduction of their in-plane lattice parameters. We discuss how in-plane stress from the nanomagnet surroundings can affect the magnetic properties in these structures.

The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO3 thin films. Theoretical calculations predict the key role of the BaTiO3/PrScO3 [Formula: see text] substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.

The interconversion of charge and spin currents via spin-Hall effect is essential for spintronics. Energy-efficient and deterministic switching of magnetization can be achieved when spin polarizations of these spin currents are collinear with the magnetization. However, symmetry conditions generally restrict spin polarizations to be orthogonal to both the charge and spin flows. Spin polarizations can deviate from such direction in nonmagnetic materials only when the crystalline symmetry is reduced. Here, we show control of the spin polarization direction by using a non-collinear antiferromagnet Mn3GaN, in which the triangular spin structure creates a low magnetic symmetry while maintaining a high crystalline symmetry. We demonstrate that epitaxial Mn3GaN/permalloy heterostructures can generate unconventional spin-orbit torques at room temperature corresponding to out-of-plane and Dresselhaus-like spin polarizations which are forbidden in any sample with two-fold rotational symmetry. Our results demonstrate an approach based on spin-structure design for controlling spin-orbit torque, enabling high-efficient antiferromagnetic spintronics.

Using strain, i.e. subtle changes in lattice constant in a thin film induced by the underlying substrate, opens up intriguing new ways to control material properties. We present a study of the effects of strain on structural and ferromagnetic properties of (1 1 1)pc-oriented La0.7Sr0.3MnO3 epitaxial thin films grown on NdGaO3, SrTiO3, and DyScO3 substrates. (The subscript pc denotes the pseudo-cubic symmetry.) The results show that La0.7Sr0.3MnO3 assumes a monoclinic unit cell on NdGaO3 and DyScO3 and a rhombohedral unit cell on SrTiO3. For La0.7Sr0.3MnO3 on NdGaO3 and DyScO3 a uniaxial magnetic anisotropy is found, while La0.7Sr0.3MnO3 on SrTiO3 is magnetically isotropic. The Néel model is used to explain the anisotropy of the thin films on NdGaO3 and SrTiO3, however, for La0.7Sr0.3MnO3 on DyScO3 the effect of octahedral rotations needs to be included through the single ion model. Through examination of the Curie temperature of the strained films we suggest that (1 1 1)-strain has a different effect on the Jahn-Teller splitting of e g and t 2g electron levels than what is seen in (0 0 1)pc-oriented La0.7Sr0.3MnO3 thin films.

Goldstone modes are massless particles resulting from spontaneous symmetry breaking. Although such modes are found in elementary particle physics as well as in condensed-matter systems like superfluid helium, superconductors, and magnons, structural Goldstone modes are rare. Epitaxial strain in thin films can induce structures and properties not accessible in bulk and has been intensively studied for (001)-oriented perovskite oxides. Here we predict Goldstone-like phonon modes in (111)-strained SrMnO3 by first-principles calculations. Under compressive strain the coupling between two in-plane rotational instabilities gives rise to a Mexican hat-shaped energy surface characteristic of a Goldstone mode. Conversely, large tensile strain induces in-plane polar instabilities with no directional preference, giving rise to a continuous polar ground state. Such phonon modes with U(1) symmetry could emulate structural condensed-matter Higgs modes. The mass of this Higgs boson, given by the shape of the Mexican hat energy surface, can be tuned by strain through proper choice of substrate.

In antiferromagnetic spintronics control of the domains and corresponding spin axis orientation is crucial for devices. Here we investigate the antiferromagnetic axis in (111)-oriented LaFeO3/SrTiO3, which is coupled to structural twin domains. The structural domains have either the orthorhombic a- or b-axis along the in-plane 110 cubic directions of the substrate, and the corresponding magnetic domains have the antiferromagnetic axis in the sample plane. Six degenerate antiferromagnetic axes are found corresponding to the 110 and 112 in-plane directions. This is in contrast to the biaxial anisotropy in (001)-oriented films and reflects how crystal orientation can be used to control magnetic anisotropy in antiferromagnets.

We observe an induced switchable magnetic moment of 1.6±0.40μB/Fe for the nominally antiferromagnetic LaFeO3 extending two to four interface layers into the non-charge transfer system La0.7Sr0.3MnO3/LaFeO3/SrTiO3(111). Simultaneously a mismatch of oxygen octahedra rotations at the interface implies an atomic reconstruction of reduced symmetry at the interface, reaching two to five layers into LaFeO3. Density functional theory of a structure with atomic reconstruction and different correlation strength shows a ferrimagnetic state with a net Fe moment at the interface. Together these results suggest that engineered oxygen octahedra rotations, affecting the local symmetry, affect electron correlations and can be used to promote magnetic properties.

Using soft x-ray spectromicroscopy, we investigate the magnetic domain structure in embedded nanomagnets defined in La0.7Sr0.3MnO3 thin films and LaFeO3/La0.7Sr0.3MnO3 bilayers. We find that shape-controlled antiferromagnetic domain states give rise to a significant reduction of the switching field of the rectangular nanomagnets. This is discussed within the framework of competition between an intrinsic spin-flop coupling and shape anisotropy. The data demonstrates that shape effects in antiferromagnets may be used to control the magnetic properties in nanomagnets.

The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO3 thin films. Theoretical calculations predict the key role of the BaTiO3/PrScO3 (110) O substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices. In-plane polarized ferroelectric thin films typically exhibit complicated multidomain states, not desirable for optoelectronic device performance. Here, the authors combine interfacial symmetry engineering and anisotropic strain to design single-domain in-plane polarized ferroelectric BaTiO3 films. [ABSTRACT FROM AUTHOR]

We report on the stability of the La0.7Sr0.3MnO3 thin film surface when deposited on (111)-oriented SrTiO3. For ultrathin La0.7Sr0.3MnO3 films, an initial 3-dimensional morphology is observed, which becomes 2-dimensional with increasing film thickness. For even thicker samples, we show that the surface morphology evolves from 2-dimensional to 3-dimensional and that this observation is consistent with an Asaro-Tiller-Grinfeld instability, which can be controlled by the deposition temperature. This allows for synthesis of films with step-and-terrace surfaces over a wide range of thicknesses. Structural characterization by x-ray diffraction and transmission electron microscopy shows that the films are strained to the SrTiO3 substrate and reveals the presence of an elongated out-of-plane lattice parameter at the interface with SrTiO3. [ABSTRACT FROM AUTHOR]

Studies of oxide interfaces, and how they affect physical properties, have recently gained large attention. For ferroelectric materials, the evolution of the order parameter close to an interface is important to understand regarding the stability of the ferroelectric phase, and how to optimize devices taking advantage of the polarization at the interface. Here we employ electron energy loss spectroscopy (EELS) in scanning transmission electron microscopy to compare the electronic and structural properties in both bulk and interface regions of epitaxial PbTiO3 thin films grown on SrTiO3 substrates. At the interface, changes in EELS spectra of the Ti-L3,2 and O-K edges, as compared to the bulk of the thin film, reveal a reduction in the hybridization of Ti 3d and Pb 6sp states with O 2p, and thus tetragonal distortion of the TiO6 octahedron. Real-space multiple-scattering calculations of the O-K edge support the experimental results. Moreover, the analysis of the Ti-valence reveals that the change is gradual over ∼2-3 nm. The data implies a decreasing ferroelectric order parameter over ∼2-3 nm close to the PbTiO3/SrTiO3 interface with a nonzero value at the interface with an additional screening of the polarization over ∼1-2 nm into the SrTiO3 substrate from the Ti atoms. [ABSTRACT FROM AUTHOR]

In this article, we examine the initial polarization of PbTiO3 thin films grown epitaxially on SrRuO3 electrodes. It is found that the as-grown predominant polarization is directed toward the SrRuO3 bottom electrode in films thinner than 20 nm and directed toward the top surface in thicker films. The data is interpreted in terms of a Landau–Ginzburg–Devonshire model for a semiconducting ferroelectric with asymmetric boundary conditions. Based on the measured hysteresis loops and the stability of the two polarization directions with time, it is concluded that charged defects serve to impose a preferential downward polarization in very thin films. [ABSTRACT FROM AUTHOR]

Observation of stripe domains in PbTiO3 thin films using standard x-ray diffraction analysis at room temperature is discussed. High-quality c-axis oriented thin films of varying thickness, from 6 to 210 unit cells, were grown on buffered NH4–HF etched SrTiO3(001) and Nb:SrTiO3(001) substrates using off-axis radio frequency magnetron sputtering. High-resolution linear Qx scans reveal a superstructure around the specular Bragg peaks, consistent with the presence of ferroelectric stripe domains. For thin samples, the stripe width is found to be proportional to the square root of the film thickness, with random in-plane orientation of domains. For films with a thickness of more than ∼100 unit cells, both monodomain samples and stripe domains were observed. We present evidence for the presence of a threshold depolarization field, above which there is a monotonically decreasing relationship between the domain width and the depolarization field. Furthermore, simulations show that random variations in size of the domains affect the separation of the diffuse scattering peaks from that of the specular reflection. [ABSTRACT FROM AUTHOR]

The crystalline and dielectric properties of sputter deposited PbTiO3 thin films were investigated as a function of the film thickness and growth temperature. The crystalline quality was found to be independent of the film thickness from 2.4 to 200 nm. The capacitance of 0.12 mm2 Pt/PbTiO3/SrRuO3 and Pt/PbTiO3/Nb:SrTiO3 capacitors was found to deviate from the ideal parallel plate capacitance for PbTiO3 films thinner than 10 nm. The decrease in capacitance was consistent with field penetration into the electrodes. The surface Pb content, as determined from x-ray photoelectron spectroscopy, was found to decrease with increasing growth temperature from 700 to 760 °C. However, no change could be observed in the crystalline quality. [ABSTRACT FROM AUTHOR]

The observation of stripe domains in PbTi[O.sub.3] thin films by using standard x-ray diffraction analysis at room temperature is described. The simulations have shown that random variations in size of the domains have affected the separation of the diffuse scattering peaks from that of the specular reflection.

The crystalline and dielectric properties of sputter deposited PbTi[O.sub.3] thin films are examined as a function of the film thickness and growth temperature. The surface Pb content has decreased with increasing growth temperature, but no change is observed in the crystalline quality.