27 results on '"Tzou, An-Jye"'
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2. Principles and Properties of Nitride-Based Electronic Devices
3. Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate
4. Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration
5. The Evolution of Manufacturing Technology for GaN Electronic Devices
6. Dependence of Photoresponsivity and On/Off Ratio on Quantum Dot Density in Quantum Dot Sensitized MoS2 Photodetector
7. Substrate Bias Effect on Dynamic Characteristics of a Monolithically Integrated GaN Half-Bridge
8. Full-color monolithic hybrid quantum dot nanoring micro light-emitting diodes with improved efficiency using atomic layer deposition and nonradiative resonant energy transfer
9. Novel Hybrid Micro Light-Emitting Diodes with Increasing Color-Conversion Technical by Non-Radiative Energy Transfer
10. Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition
11. Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure
12. Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography
13. High-Efficiency InGaN/GaN Core–Shell Nanorod Light-Emitting Diodes With Low-Peak Blueshift and Efficiency Droop
14. Wavelength Tuning in InGaN/GaN Light-emitting Diodes with Strain-induced Through Nanosphere Lithography
15. An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors
16. High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer
17. Non-thermal alloyed ohmic contact process of GaN-based HEMTs by pulsed laser annealing
18. Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions
19. Structural and optical properties of low temperature grown AlN films on sapphire using helicon sputtering system
20. Efficiency droop behavior improvement through barrier thickness modification for GaN-on-silicon light-emitting diodes
21. High-Efficiency InGaN/GaN Core?Shell Nanorod Light-Emitting Diodes With Low-Peak Blueshift and Efficiency Droop.
22. Deep UV Metal-Semiconductor-Metal Photodetectors Using Low-Temperature-Grown AlN Epilayer on Sapphires
23. Growth evolution and magneto-optical characteristics of self-assembled ZnTe/ZnMnSe quantum dots
24. Optical and Magnetic Properties of Zn1-xMnxO Grown by Plasma-Assisted Molecular Beam Epitaxy.
25. Greatly improved carrier injection in GaN-based VCSEL by multiple quantum barrier electron blocking layer.
26. Greatly improved efficiency droop for InGaN-based green light emitting diodes by quaternary content superlattice electron blocking layer.
27. Dependence of Photoresponsivity and On/Off Ratio on Quantum Dot Density in Quantum Dot Sensitized MoS 2 Photodetector.
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