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Low current output detection based electronic reader are the key factor for biosensors commercialization. Two type electrode based amperometric biosensors show low current signal output around nanoampere (pA) to microampere (µA) range. In this research, an electronic reader system with voltage converter, voltage amplifier, main control circuit and LCD display was developed to detect current output value for two type electrode amperometric biosensors in selectable ranges of nanoampere. The current source module will act as a replacement for the biosensor input current. The experiment was to verified the electrical functionality measurements of the device by comparing the accuracy of the electronic reader with Keithley 2450 source meter. The Design Spark PCB software and LTspice software were used to design the electronic reader circuit. Arduino software was used to create a programming code to upload in NodeMCU microcontroller. [ABSTRACT FROM AUTHOR]

An outbreak of severe acute respiratory coronavirus 2 (SARS-CoV-2) infection occurred in Wuhan, Hubei Province, China and spread across China and beyond. WHO officially named the disease caused by the novel coronavirus as Coronavirus Disease 2019 (Covid-19). Features included pyrexia, radiological signs or acute respiratory distress, reduced or normal white blood cells, lymphopenia, and failure to resolve over 3 to 5 days of antibiotic treatment. This paper describes ultra-selective and rapid to detect the electrical signal generated by the biosensor that converts the biological reaction into an electrical signal and can make early RNA Covid-19 detection. As a step in preparing the biosensor, silanization with (3-Aminopropyl) Triethoxysilane (APTES), immobilization of RNA Covid-19 Probe were used. Then, the biosensor was hybridized to perform selectivity measurement using complementary and non-complementary RNA Covid-19 target. [ABSTRACT FROM AUTHOR]

The present present the effect of orientation of silicon nanowires on its band structure properties based on atomic interaction within SiNWs. It was observed the atomic interaction energy resulted in inducing force which created both repulsive or attractive generating free radicals which produce dynamic behaviour leading to band structure shrinkage. This effect has been observed in various theoretical studies for nanowires. At fixed position, the atom within the silicon significantly interact, resulting in relative molecular vibration. [ABSTRACT FROM AUTHOR]

The influence of orientation for nanostructures on electronics properties is evaluated theoretically in this paper. The orientation structures show remarkable influence on the silicon semiconductor materials. The geometries of nanostructure have mainly an influence on the surface charges activity. Orientation (111) has the highest charges activity among the three nanostructures orientations. The greatest enhancement of the band structure is obtained attributed to the extremely higher specific surface area due to the geometry influence. Thus, this finding results analysis described herein will serve as an effective benchmark for the design and subsequent nanostructures fabrication of the nanostructures. [ABSTRACT FROM AUTHOR]

The vibration properties and the mechanical characteristic are important for the stability of electronics devices, particularly for Nano devices with high potential application. Silicon Nanowire show different properties from the corresponding bulk silicon. The understanding of its behaviour with reliable theoretical model explain the relation between size effect of the nanowire and the vibration frequency is significant to reveal the mechanical behaviour of the device is very important. Thus, this study, present the effect of small diameter of Silicon Nanowires on Its Vibration Properties is established based on the lattice parameters and the binding energy change of silicon nanowire based on first principles calculations through Abinit. Atomic interaction of the SiNWs obtained based on the density functional theory. It was observed that the atomic interaction energy as result of electromechanically induced pressure due -hole pair in which electron (e−) was reductive, and hole (h+) was oxidative. The hole (h+) reacted with e− in the second nanowire, generating free radicals (e−), superoxide anion and perhydroxyl radicals which create phonon group velocity this create vibration. Due to the excessive energy of process the temperature rises and alters the atomic cubic dimensions in turn affect its elastic properties. The nanowire compared with with bulk silicon exhibit high higher modulus, this as result of damped behaviour of the nanowire which is due to the high frequency vibration of silicon atoms at the edge of SiNWs and its Debye length is shorter. As the wire diameter decrease effect of the atomic vibration is reduced. [ABSTRACT FROM AUTHOR]

The total energy of the silicon nanowire is getting attention recently, due to the wire application battery. Thus, this study presents the silicon nanowire total energy based on local density approximation the results that showed silicon nanowires have better energy with standing. These properties can contribute to the reliability and design of novel silicon nanodevices especially in battery industry. Electronic properties of SiNWs were studied based on First principal method via DFT. Abinit code were used for calculation as implemented in Linux. The total energy at (001), (110) and (111) with different sizes were calculated. The total energy for (001), (110) and (111) SiNWs are -1.33, -1.35 and -1.37 respectively. SiNWs in the direction of {111} has the lowest total energy. [ABSTRACT FROM AUTHOR]

Mechanical properties and total energy of SiNWs were studied based on first principle method via density functional theory. Abinit code were used for calculation as implemented in Linux coupled with Matlab scripts. Effect of various sizes and orientations on mechanical properties and total energy of silicon nanowire were identified. The mechanical properties and total energy at (001), (110) and (111) were determined. The atomic interaction in the wires influenced various mechanical parameters of the wire. The results show the strain for the three orientations were 0.1164×10−5, 0.12×10−5 and 0.115×10−5 with modulus of 149.6GPa, 75.5GPa and 85.1GPa respectively. [ABSTRACT FROM AUTHOR]

Globally, second leading cause of death for women is a Cervical Cancer. CC is caused by infection of Human Papillomavirus (HPV). HPV strains 16 (50.8%), 18 (17.6%), and 58 (2.6%) became the most leading strains of infection in Malaysia. Recently, a study showed that HPV 58 was rare worldwide but famous in Asia countries including Malaysia. However, detection the significance of HPV-58 in women has not been studied extensively because of rare case compared to HPV 16 and 18. HPV-58 is commonly found in East Asia, but infrequently worldwide, due to changes in the environment of viruses and humans. Detailed biological knowledge is crucial for the development of effective countermeasures, diagnostic tests, vaccines and antiviral drugs against the HPV. The oligonucleotide sequences of HPV 58 in E6 region have been analysed between 24-35 mer in order to maintain the specificity and selectivity. The percentage of similarities between the coding sequences has developed with 66.7% of GC content. The DNA probe of HPV 58 was 5'GGG CGC TGT GCA GTG TGT TGG AGA CCC CGA3' with 30 mer of oligonucleotides. The important of E6 region for developing the coding sequence as it involved in the DNA reproduction, transcription, translation regulation and transformation of HPV genome. Phylogenetic trees were then constructed by Neighbour-Joining and the Kimura 2-parameters methods, followed by an analysis of selection pressures acting on the E6/E7 genes by ebi ac uk tools. [ABSTRACT FROM AUTHOR]

The aim of this research study is to study the electrical and topography analysis of fabricated Aluminium Interdigitated Electrode (Al IDE). Al IDE pattern was designed using AutoCAD software with 50 µM finger gap. Fabricated electrode was physically characterized using High Power Microscope (HPM), Scanning Electron Microscope (SEM) and electrically validated through I-V measurement using Current Source Meter (Keithley 2450) and sensor platform. Electrical measurement confirmed that Al IDE was well fabricated without any shortage and results of similar Al IDE samples were confirmed that the repeatability of the device. [ABSTRACT FROM AUTHOR]