625 results on '"Udrea, F."'
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2. The Effect of the Pillar Ripple on the Reverse Recovery in Superjunction MOSFETs
3. Impact of underfill and other physical dimensions on Silicon Lateral IGBT package reliability using computer model with discrete and continuous design variables
4. Design of a normally-off diamond JFET for high power integrated applications
5. Characterization of the novel ICeGaN 650 V/ 8.5 A, 200 mΩ power device technology
6. MEMS Infrared Emitter and Detector for Capnography Applications
7. Experimental, analytical and numerical investigation of non-linearity of SOI diode temperature sensors at extreme temperatures
8. Ambient Temperature Carbon Nanotube Ammonia Sensor on CMOS Platform
9. 3D Multiphysics Modelling of an SOI CMOS MEMS Thermal Wall Shear Stress Sensor
10. A CMOS-MEMS Thermopile with an Integrated Temperature Sensing Diode for Mid-IR Thermometry
11. Graphene-coated Rayleigh SAW Resonators for NO2 Detection
12. SOI CMOS MEMS Infra-red Thermal Source with Carbon Nanotubes Coating
13. Simultaneous Flow and Thermal Conductivity Sensing on a Single Chip Using Artificial Neural Networks
14. An advanced physical model for the Coulombic scattering mobility in 4H-SiC inversion layers.
15. Optimisation of the carrier lifetime profile in 1.2kV planar and trench SiC MOSFETs
16. 750V Narrow Mesa IGBT vs SJ-IGBT: Performance and SC-SOA Assessment
17. Experimental demonstration, challenges, and prospects of the vertical SiC FinFET
18. SOI-based Micro-hotplate Microcalorimeter Gas Sensor With Integrated BiCMOS Transducer
19. Modelling of CMOS Single Membrane Thermopile Detector Arrays
20. Thin Partial SOI Power Devices for High Voltage Integrated Circuits
21. Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor
22. Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies
23. Static and Dynamic Effects of the Incomplete Ionization in Superjunction Devices
24. Multi-Channel Monolithic-Cascode HEMT (MC2-HEMT): A New GaN Power Switch up to 10 kV
25. Normally-OFF Diamond Reverse Blocking MESFET
26. Ultra-high temperature (>300 °C) suspended thermodiode in SOI CMOS technology
27. Dynamic body potential variation in FD SOI MOSFETs operated in deep non-equilibrium regime: Model and applications
28. ZnO nanowires grown on SOI CMOS substrate for ethanol sensing
29. Operation and performance of the 4H-SiC junctionless FinFET
30. Identification and quantification of different vapours using a single polymer chemoresistor and the novel dual transient temperature modulation technique
31. Surge current capability evaluation of 6.5kV SiC MOSFETs with 3D cell layouts
32. Numerical and experimental investigation on a novel high-voltage ( > 600-V) SOI LDMOS in a self-isolation HVIC
33. The superjunction insulated gate bipolar transistor optimization and modeling
34. Breakdown voltage for superjunction power devices with charge imbalance: an analytical model valid for both punch through and non punch through devices
35. Numerical parameterization of chemical-vapor-deposited (CVD) single-crystal diamond for device simulation and analysis
36. Nanostructured metal oxides semiconductors for oxygen chemiresistive sensing
37. Novel design and characterisation of SOI CMOS micro-hotplates for high temperature gas sensors
38. Current density and Gate Ringing in Superjunction MOSFETs
39. SiC junction-controlled transistors
40. Normally-off trench JFET technology in 4H silicon carbide
41. Mechanisms of Asymmetrical Turn-On and Turn-Off and the Origin of Dynamic CGD Hysteresis for Hard-Switching Superjunction MOSFETs
42. Dynamic C GD and dV/dt in Superjunction MOSFETs
43. Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs
44. Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond
45. High Temperature Direct Double Side Cooled Inverter Module for Hybrid Electric Vehicle Application
46. Analysis of Novel Packaging Techniques for High Power Electronics in SiC
47. Diamond power devices: state of the art, modelling, figures of merit and future perspective
48. Suppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate
49. Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics
50. True Material Limit of Power Devices - Applied to 2-D Superjunction MOSFET
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